专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08773822B2 Spin-torque oscillator for microwave assisted magnetic recording 失效
标题翻译：用于微波辅助磁记录的旋转扭矩振荡器
公开(公告)号：US08773822B2
公开(公告)日：2014-07-08
申请号：US13296866
申请日：2011-11-15
申请人： Masato Matsubara , Masato Shiimoto , Hiroyuki Katada , Keiichi Nagasaka
发明人： Masato Matsubara , Masato Shiimoto , Hiroyuki Katada , Keiichi Nagasaka
IPC分类号： G11B5/33
CPC分类号： G11B5/3146 , G11B2005/0024
摘要： In a conventional type magnetic head that performs microwave assisted recording, since a difference in a demagnetizing field between an end and the center of a field generation layer (FGL) grows larger when saturation magnetization of the FGL grows larger, the FGL that generates a microwave is not oscillated in a state of a single domain. Then, a spin-torque oscillator according to the present invention used for a magnetic head for microwave assisted recording is provided with at least one fixed layer, one non-magnetic intermediate layer and one alternating-current magnetic field generation layer respectively and is provided with a structure where saturation magnetization at ends of a film except an end in a direction from an air bearing surface to a surface opposite to it is made smaller than saturation magnetization in the center of the film of the alternating-current magnetic field generation layer.
摘要翻译：在执行微波辅助记录的常规型磁头中，由于当FGL的饱和磁化强度增大时场强发生层（FGL）的端部和中心之间的消磁场的差异增大，所以产生微波的FGL 在单个域的状态下不振荡。然后，本发明的用于微波辅助记录磁头的自旋转矩振荡器分别设置有至少一个固定层，一个非磁性中间层和一个交流磁场产生层，并且具有除了在从空气轴承表面到与其相反的表面的方向上的端部之外，膜的端部处的饱和磁化强度小于交流磁场产生层的膜中心的饱和磁化强度的结构。

2. 发明授权

US08687319B2 Magnetic recording apparatus with magnetic recording head capable of recording information on a magnetic recording medium 有权
标题翻译：具有能够在磁记录介质上记录信息的磁记录头的磁记录装置
公开(公告)号：US08687319B2
公开(公告)日：2014-04-01
申请号：US13404036
申请日：2012-02-24
申请人： Masukazu Igarashi , Masato Matsubara , Keiichi Nagasaka , Masato Shiimoto
发明人： Masukazu Igarashi , Masato Matsubara , Keiichi Nagasaka , Masato Shiimoto
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/3146 , G11B2005/0024
摘要： A spin torque oscillator for microwave assisted recording includes a perpendicular free layer having a magnetic anisotropy axis in a direction perpendicular to a film surface, and an in-plane free layer composed of a magnetic film effectively having a magnetization easy plane on a film surface. When electric currents flows from the in-plane free layer side to the perpendicular free layer side, both free layers exchange spin information and thereby rotate their respective magnetizations almost antiparallel to each other and along a boundary surface with high-speed. Preferably, the perpendicular free layer is thinner than the in-plane free layer. It is also preferable that a magnetic anisotropy field of the perpendicular free layer attributable to materials should balance, in reverse directions, with an effective demagnetizing field in the perpendicular direction. Furthermore, the perpendicular free layer is preferably placed on the main pole side.
摘要翻译：用于微波辅助记录的自旋扭矩振荡器包括在垂直于膜表面的方向上具有磁各向异性轴的垂直自由层，以及由在膜表面上具有易磁化平面的磁性膜构成的面内自由层。当电流从平面内自由层侧流向垂直自由层侧时，两个自由层交换自旋信息，从而使它们各自的磁化几乎反平行并沿着边界表面高速旋转。优选地，垂直自由层比平面内自由层薄。由于材料的垂直自由层的磁各向异性场也优选在相反的方向上平衡，并且在垂直方向上具有有效的去磁场。此外，垂直自由层优选放置在主极侧。

3. 发明申请

US20130070367A1 MAGNETIC RECORDING HEAD AND MAGNETIC RECORDING APPARATUS 有权
标题翻译：磁记录头和磁记录装置
公开(公告)号：US20130070367A1
公开(公告)日：2013-03-21
申请号：US13404036
申请日：2012-02-24
申请人： Masukazu IGARASHI , Masato MATSUBARA , Keiichi NAGASAKA , Masato SHIIMOTO
发明人： Masukazu IGARASHI , Masato MATSUBARA , Keiichi NAGASAKA , Masato SHIIMOTO
IPC分类号： G11B21/02 , G11B5/127
CPC分类号： G11B5/1278 , G11B5/3146 , G11B2005/0024
摘要： A spin torque oscillator for microwave assisted recording includes a perpendicular free layer having a magnetic anisotropy axis in a direction perpendicular to a film surface, and an in-plane free layer composed of a magnetic film effectively having a magnetization easy plane on a film surface. When electric currents flows from the in-plane free layer side to the perpendicular free layer side, both free layers exchange spin information and thereby rotate their respective magnetizations almost antiparallel to each other and along a boundary surface with high-speed. Preferably, the perpendicular free layer is thinner than the in-plane free layer. It is also preferable that a magnetic anisotropy field of the perpendicular free layer attributable to materials should balance, in reverse directions, with an effective demagnetizing field in the perpendicular direction. Furthermore, the perpendicular free layer is preferably placed on the main pole side.
摘要翻译：用于微波辅助记录的自旋扭矩振荡器包括在垂直于膜表面的方向上具有磁各向异性轴的垂直自由层，以及由在膜表面上具有易磁化平面的磁性膜构成的面内自由层。当电流从平面内自由层侧流向垂直自由层侧时，两个自由层交换自旋信息，从而使它们各自的磁化几乎反平行并沿着边界表面高速旋转。优选地，垂直自由层比平面内自由层薄。由于材料的垂直自由层的磁各向异性场也优选在相反的方向上平衡，并且在垂直方向上具有有效的去磁场。此外，垂直自由层优选放置在主极侧。

4. 发明授权

US08345380B2 Spin torque oscillator and magnetic recording head and magnetic recording device mounted with the spin torque oscillator 有权
标题翻译：旋转扭矩振荡器和磁记录头以及安装有自旋扭矩振荡器的磁记录装置
公开(公告)号：US08345380B2
公开(公告)日：2013-01-01
申请号：US13208384
申请日：2011-08-12
申请人： Yo Sato , Keiichi Nagasaka , Masato Shiimoto , Masato Matsubara
发明人： Yo Sato , Keiichi Nagasaka , Masato Shiimoto , Masato Matsubara
IPC分类号： G11B5/127
CPC分类号： G11B5/3133 , G11B2005/0024
摘要： The present invention provides a spin torque oscillator that can realize stable oscillation and has high reliability. A laminated structure including a first magnetic layer 1 having a bcc crystal structure and having in-plane magnetic anisotropy and a second magnetic layer 2 having perpendicular magnetic anisotropy laminated on the first magnetic layer 1 and including a multilayer film of Co and Ni is used.
摘要翻译：本发明提供一种能够实现稳定振荡并具有高可靠性的自旋转矩振荡器。使用包括具有bcc晶体结构并具有面内磁各向异性的第一磁性层1和层叠在第一磁性层1上并具有Co和Ni的多层膜的具有垂直磁各向异性的第二磁性层2的叠层结构。

5. 发明申请

US20090323406A1 MAGNETIC MEMORY ELEMENT, AND METHOD OF MANUFACTURING MEMORY ELEMENT 审中-公开
标题翻译：磁记忆元件，以及制造记忆元件的方法
公开(公告)号：US20090323406A1
公开(公告)日：2009-12-31
申请号：US12404781
申请日：2009-03-16
申请人： Takao Ochiai , Hiroshi Ashida , Keiichi Nagasaka
发明人： Takao Ochiai , Hiroshi Ashida , Keiichi Nagasaka
IPC分类号： G11C11/00 , H01L21/00 , G11C11/14
CPC分类号： H01L27/222 , G11C11/14 , H01L29/82
摘要： A magnetic memory element includes an impurity element, and magnetic thin lines to which the impurity element is added to adjust the movement of a magnetic domain wall in a magnetic field. Applying a voltage to the magnetic thin lines controls a position of the magnetic domain wall to invert a magnetization direction of a magnetic recording layer adjacent to the magnetic domain wall, by which information is recorded.
摘要翻译：磁存储元件包括杂质元素和杂质元素添加到其中以调节磁畴壁在磁场中的运动的磁性细线。向磁性细线施加电压控制磁畴壁的位置，以反转记录有信息的磁畴壁附近的磁记录层的磁化方向。

6. 发明申请

US20080080097A1 MAGNETORESISTIVE ELEMENT, METHOD OF MANUFACTURING THE SAME, AND MAGNETIC STORAGE UNIT 审中-公开
标题翻译：磁性元件，制造它们的方法和磁性存储单元
公开(公告)号：US20080080097A1
公开(公告)日：2008-04-03
申请号：US11851062
申请日：2007-09-06
申请人： Keiichi NAGASAKA
发明人： Keiichi NAGASAKA
IPC分类号： G11B5/33
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , H01F10/3272 , H01F41/32 , H01L43/08
摘要： A magnetoresistive element is disclosed that includes first and second terminals provided on first and second opposing surfaces, respectively, of a magnetoresistive film; the magnetoresistive film including a fixed magnetization layer, a non-magnetic metal layer, and a free magnetization layer stacked in this order from the first terminal side; and a first magnetic coupling interruption layer covering the free magnetization layer and a second magnetic coupling interruption layer covering the first magnetic coupling interruption layer provided between the magnetoresistive element and the second terminal. The first magnetic coupling interruption layer includes a first non-magnetic material causing spin-dependent interface scattering. The second magnetic coupling interruption layer includes a second non-magnetic material different from the first non-magnetic material, the second non-magnetic material containing at least one selected from the group consisting of Al, Ti, Cr, Mn, Zn, Nb, Mo, Ru, Rh, Pd, Ag, In, Hf, Ta, W, Ir, Pt, and Au.
摘要翻译：公开了一种磁阻元件，其包括分别设置在磁阻膜的第一和第二相对表面上的第一和第二端子; 所述磁阻膜包括从所述第一端子侧依次堆叠的固定磁化层，非磁性金属层和自由磁化层; 以及覆盖自由磁化层的第一磁耦合中断层和覆盖设置在磁阻元件和第二端子之间的第一磁耦合中断层的第二磁耦合中断层。第一磁耦合中断层包括引起自旋相关界面散射的第一非磁性材料。第二磁耦合中断层包括与第一非磁性材料不同的第二非磁性材料，第二非磁性材料含有选自Al，Ti，Cr，Mn，Zn，Nb， Mo，Ru，Rh，Pd，Ag，In，Hf，Ta，W，Ir，Pt和Au。

7. 发明申请

US20070048485A1 Magnetoresistive effect element, magnetic head, magnetic storage device and magnetic memory device 审中-公开
标题翻译：磁阻效应元件，磁头，磁存储器件和磁存储器件
公开(公告)号：US20070048485A1
公开(公告)日：2007-03-01
申请号：US11437757
申请日：2006-05-22
申请人： Arata Jogo , Hirotaka Oshima , Keiichi Nagasaka
发明人： Arata Jogo , Hirotaka Oshima , Keiichi Nagasaka
IPC分类号： B32B3/02
CPC分类号： H01F10/16 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01L27/228 , H01L43/10 , Y10T428/21
摘要： A magnetoresistive effect element of a CPP type includes a fixed magnetization layer, a non-magnetic layer and a free magnetization layer formed of CoFeAl. The CoFeAl has a composition falling within a range defined by straight lines connecting points A, B, C, D, E, F and A, in that order, in a ternary composition diagram. The point A is (55, 10, 35), the point B is (50, 15, 35), the point C is (50, 20, 30), the point D is (55, 25, 20), the point E is (60, 25, 15), and the point F is (70, 15, 15), where coordinates of the composition of each point is represented by (Co content, Fe content, Al content). Each content is expressed by atomic percent.
摘要翻译： CPP型的磁阻效应元件包括固定磁化层，非磁性层和由CoFeAl形成的自由磁化层。 CoFeAl具有在三元组成图中按顺序连接点A，B，C，D，E，F和A的直线限定的范围内的组成。点A是（55,10,35），点B是（50,15,35），点C是（50,20,30），点D是（55,25,20），点 E是（60,25,15），点F是（70,15,15），其中每个点的组成坐标由（Co含量，Fe含量，Al含量）表示。每个内容以原子百分比表示。

8. 发明申请

US20060092577A1 Magnetoresistive effect element, magnetic head, and magnetic recording device 失效
标题翻译：磁阻效应元件，磁头和磁记录装置
公开(公告)号：US20060092577A1
公开(公告)日：2006-05-04
申请号：US11072164
申请日：2005-03-03
申请人： Keiichi Nagasaka , Yutaka Shimizu , Atsushi Tanaka
发明人： Keiichi Nagasaka , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3929 , G11B5/39 , G11B5/3903 , H01L43/08
摘要： The magnetoresistive effect element comprises an electrode layer 12 of a crystalline material; a base layer 14 of a conductive amorphous material formed over the electrode layer 12, an antiferromagnetic layer 18 of a crystalline material formed over the base layer 14, a ferromagnetic layer 20 formed over the antiferromagnetic layer 18 and having the magnetization direction defined by the antiferromagnetic layer 18, a nonmagnetic intermediate layer 22 formed over the ferromagnetic layer 20, a ferromagnetic layer 24 formed over the nonmagnetic intermediate layer 22 and having the magnetization direction changed by an external magnetic field, and an electrode layer 28 formed over the ferromagnetic layer 24.
摘要翻译：磁阻效应元件包括结晶材料的电极层12; 在电极层12上形成的导电非晶材料的基底层14，在基底层14上形成的结晶材料的反铁磁层18，在反铁磁层18上形成的铁磁层20，并且具有由反铁磁性层18，在铁磁层20上形成的非磁性中间层22，形成在非磁性中间层22上并具有由外部磁场改变的磁化方向的铁磁层24和形成在铁磁层24上的电极层28。

9. 发明申请

US20100053794A1 THERMALLY ASSISTED MAGNETIC RECORDING METHOD, MAGNETIC RECORDING HEAD, MAGNETIC RECORDING MEDIUM, AND MAGNETIC RECORDING APPARATUS 审中-公开
标题翻译：热辅助磁记录方法，磁记录头，磁记录介质和磁记录装置
公开(公告)号：US20100053794A1
公开(公告)日：2010-03-04
申请号：US12498636
申请日：2009-07-07
申请人： Hideki Mashima , Keiichi Nagasaka
发明人： Hideki Mashima , Keiichi Nagasaka
IPC分类号： G11B5/02
CPC分类号： G11B5/314 , G11B2005/0005 , G11B2005/0021
摘要： In a thermally assisted magnetic recording method, tunneling current is applied from a tunneling current wiring arranged on a magnetic recording head configured to fly above a magnetic recording medium having a bit pattern formed of recording bits separated from one another by an insulator to a desired recording bit of the magnetic recording medium, so that the recording bit is heated and thus coercivity of the recording bit is reduced. Then, an alternating magnetic field corresponding to information to be recorded is applied from the magnetic recording head to the heated recording bit, so that the information can be recorded in the magnetic recording medium.
摘要翻译：在热辅助磁记录方法中，隧道电流从设置在磁记录头上的隧道电流布线施加，该磁记录头配置成在具有由绝缘体彼此分离的记录位形成的位图形的磁记录介质上方飞行到所需记录磁记录介质的位，使得记录位被加热，因此记录位的矫顽力降低。然后，将与记录信息相对应的交变磁场从磁记录头施加到加热记录位，使得信息可以记录在磁记录介质中。

10. 发明授权

US07538987B2 CPP spin-valve element 有权
标题翻译： CPP自旋阀元件
公开(公告)号：US07538987B2
公开(公告)日：2009-05-26
申请号：US10611978
申请日：2003-07-03
申请人： Hideo Fujiwara , Keiichi Nagasaka , Tong Zhao , William H. Butler , Julian Velev , Amrit Bandyopadhyay
发明人： Hideo Fujiwara , Keiichi Nagasaka , Tong Zhao , William H. Butler , Julian Velev , Amrit Bandyopadhyay
IPC分类号： G11B5/39
CPC分类号： G11B5/1278
摘要： A CPP spin-valve element formed on a substrate including a free layer structure including at least one ferromagnetic layer and a pinned layer structure including at least one ferromagnetic layer. The free layer is magnetically softer than the pinned layer. A thin non-magnetic spacer layer structure configured to separate the free layer and the pinned layer is provided in order to prevent a magnetic coupling between the free and pinned layer structures, and to allow an electric current to go there through. At least two current-confining (CC) layer structures including at least two parts having significantly different current conductivities are incorporated therein.
摘要翻译：一种CPP自旋阀元件，其形成在包括至少一个铁磁层和包括至少一个铁磁层的钉扎层结构的自由层结构的基板上。自由层比被钉扎层更软。提供了构造成分离自由层和被钉扎层的薄非磁性间隔层结构，以防止自由和被钉扎层结构之间的磁耦合，并且允许电流通过其去。包含至少两个电流限制（CC）层结构，其包括具有显着不同的电流电导率的至少两个部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式