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1. 发明授权

US09852833B1 Magnetization alignment in a thin-film device 有权
公开(公告)号：US09852833B1
公开(公告)日：2017-12-26
申请号：US15195248
申请日：2016-06-28
申请人： Alcatel-Lucent USA Inc.
发明人： Gavin D. Scott
IPC分类号： H01H51/22 , H01F7/06
CPC分类号： G11C11/14 , B82Y10/00 , B82Y25/00 , G11C13/0014 , G11C13/0016 , G11C13/025 , H01F10/3254 , H01L29/0665 , H01L29/66984 , H01L29/7613 , H01L43/12
摘要： We disclose a magnetic device having a pair of coplanar thin-film magnetic electrodes arranged on a substrate with a relatively small edge-to-edge separation. In an example embodiment, the magnetic electrodes have a substantially identical footprint that can be approximated by an ellipse, with the short axes of the ellipses being collinear and the edge-to-edge separation between the ellipses being smaller than the size of the short axis. In some embodiments, the magnetic electrodes may have relatively small tapers that extend toward each other from the ellipse edges in the constriction area between the electrodes. Some embodiments may also include an active element inserted into the gap between the tapers and electrical leads connected to the magnetic electrodes for passing electrical current through the active element. When subjected to an appropriate external magnetic field, the magnetic electrodes can advantageously be magnetized to controllably enter parallel and antiparallel magnetization states.

2. 发明授权

US09812203B2 Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating 有权
公开(公告)号：US09812203B2
公开(公告)日：2017-11-07
申请号：US15292098
申请日：2016-10-12
申请人： Zeno Semiconductor, Inc.
发明人： Yuniarto Widjaja
IPC分类号： G11C14/00 , G11C11/14 , G11C11/404 , G11C11/56 , G11C13/00 , H01L27/108 , H01L27/24 , H01L29/78 , H01L27/102 , H01L45/00 , G06F3/06
CPC分类号： G11C14/0045 , G06F3/0619 , G06F3/0647 , G06F3/0685 , G11C11/14 , G11C11/404 , G11C11/5678 , G11C11/5685 , G11C13/0004 , G11C13/0007 , G11C13/0033 , G11C2013/0045 , G11C2013/0078 , G11C2211/4016 , G11C2211/5643 , G11C2213/31 , G11C2213/32 , H01L27/1023 , H01L27/108 , H01L27/10802 , H01L27/10897 , H01L27/24 , H01L27/2445 , H01L27/2463 , H01L29/7841 , H01L45/06 , H01L45/065 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/141 , H01L45/146 , H01L45/147
摘要： Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store data stored in the floating body under any one of a plurality of predetermined conditions. A method of operating semiconductor memory to function as volatile memory, while having the ability to retain stored data when power is discontinued to the semiconductor memory is described.

3. 发明申请

US20170179375A1 MAGNETIC ELEMENT, SKYRMION MEMORY, SKYRMION MEMORY DEVICE, SKYRMION-MEMORY EMBEDDED SOLID-STATE ELECTRONIC DEVICE, DATA STORAGE APPARATUS, DATA PROCESSING AND COMMUNICATION APPARATUS 有权
公开(公告)号：US20170179375A1
公开(公告)日：2017-06-22
申请号：US15448612
申请日：2017-03-03
申请人： RIKEN
发明人： Naoto NAGAOSA , Wataru KOSHIBAE , Junichi IWASAKI , Masashi KAWASAKI , Yoshinori TOKURA , Yoshio KANEKO
IPC分类号： H01L43/02 , G11C11/16 , H01L43/08 , H01L27/22 , H01F7/20 , H01F10/32
CPC分类号： H01L43/02 , G11C11/14 , G11C11/161 , G11C11/1653 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/18 , G11C19/08 , G11C19/0808 , G11C19/085 , G11C19/0866 , H01F7/20 , H01F10/3254 , H01L27/105 , H01L27/222 , H01L27/228 , H01L29/82 , H01L43/06 , H01L43/08
摘要： Provided is a magnetic element capable of generating one skyrmion and erasing the one skyrmion. The magnetic element includes a magnet shaped like a substantially rectangular flat plate, an upstream electrode connected to the magnet in a width Wm direction of the magnet and made of a non-magnetic metal, a downstream electrode connected to the magnet in the width Wm direction to oppose the upstream electrode and made of a non-magnetic metal, and a skyrmion sensor configured to detect the skyrmion. Here, a width Wm of the substantially rectangular magnet is such that 3·λ>Wm≧λ, where λ denotes a diameter of the skyrmion, a length Hm of the substantially rectangular magnet is such that 2·λ>Hm≧λ, and the magnet has a notch structure at the edge between the upstream electrode and the downstream electrode.

4. 发明授权

US09589616B2 Energy efficient three-terminal voltage controlled memory cell 有权
标题翻译：节能三端电压控制存储单元
公开(公告)号：US09589616B2
公开(公告)日：2017-03-07
申请号：US14927500
申请日：2015-10-30
申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.
发明人： Hao Meng , Yong Wee Francis Poh , Tze Ho Simon Chan
IPC分类号： G11C11/00 , G11C11/16 , H01L43/02 , H01L43/08 , H01L43/12 , G11C11/15 , G11C11/14
CPC分类号： G11C11/161 , G11C11/14 , G11C11/15 , G11C11/16 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/12
摘要： Memory cell, method for operating the memory cell and method for fabricating the memory cell are disclosed. The memory cell includes at least three terminals, a first magnetic tunnel junction (MTJ) structure and a second MTJ structure. The first MTJ is coupled between a first terminal (FT) and a third terminal. A portion of the first MTJ is configured to include a first barrier layer disposed between a first fixed layer and a free layer (FL). A magnetization direction of the FL is used to store data, the magnetization direction being controlled by an electric field. The second MTJ is coupled between the FT and a second terminal, where a portion of the second MTJ is configured to include a second barrier layer disposed between a second fixed layer and the FL, where a tunnel magnetoresistance of the second barrier layer is used to read the data.
摘要翻译：公开了用于操作存储单元的存储单元，用于制造存储单元的方法。存储单元包括至少三个端子，第一磁隧道结（MTJ）结构和第二MTJ结构。第一MTJ耦合在第一终端（FT）和第三终端之间。第一MTJ的一部分被配置为包括设置在第一固定层和自由层（FL）之间的第一阻挡层。使用FL的磁化方向来存储数据，磁化方向由电场控制。第二MTJ耦合在FT和第二端子之间，其中第二MTJ的一部分被配置为包括设置在第二固定层和FL之间的第二阻挡层，其中第二阻挡层的隧道磁阻用于读取数据。

5. 发明授权

US09431599B2 Non-volatile logic device 有权
标题翻译：非易失性逻辑器件
公开(公告)号：US09431599B2
公开(公告)日：2016-08-30
申请号：US14782318
申请日：2014-05-19
申请人： NANYANG TECHNOLOGICAL UNIVERSITY
发明人： Wen Siang Lew , Chandrasekhar Murapaka , Indra Purnama , Sarjoosing Goolaup , Pankaj Sethi , Chinkhanlun Guite
IPC分类号： G06F7/38 , H03K19/173 , H01L43/02 , H03K19/20 , H01L43/08
CPC分类号： H01L43/02 , G11C11/14 , H01L43/08 , H03K19/20
摘要： A non-volatile logic device, comprising: a first input element magnetizable along a first direction to impart or change a chirality of a domain wall traversing the first input element a second input element configured to transport the domain wall, a magnetization of the second input element along a second direction representing a second logical input; a bifurcated output section comprising a pair of output elements for receiving the domain wall from the second input element, a magnetization of at least part of the output elements being changeable by propagation of the domain wall along the output elements; and a non-magnetic conductive element; wherein the magnetization in an output element after propagation of the domain wall represents a value of a logical function selectable by passing an electrical current through the non-magnetic conductive element to induce a magnetic field of a desired magnitude and direction in the second input element.
摘要翻译：一种非易失性逻辑器件，包括：第一输入元件，其沿着第一方向可磁化，以赋予或改变穿过所述第一输入元件的畴壁的手性，所述第二输入元件配置成输送所述畴壁;第二输入元件沿第二方向表示第二逻辑输入; 分支输出部分，包括用于从第二输入元件接收畴壁的一对输出元件，至少部分输出元件的磁化可通过畴壁沿着输出元件的传播而改变; 和非磁性导电元件; 其中所述畴壁传播之后的输出元件中的磁化表示通过使电流通过所述非磁性导电元件以在所述第二输入元件中引起期望的大小和方向的磁场而可选择的逻辑功能的值。

6. 发明授权

US09343115B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US09343115B2
公开(公告)日：2016-05-17
申请号：US14656689
申请日：2015-03-12
申请人： PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
发明人： Takanori Ueda , Kazuyuki Kouno , Yasuo Murakuki , Masayoshi Nakayama , Yuriko Ishitobi , Keita Takahashi
IPC分类号： G11C16/04 , G11C5/08 , G11C11/56 , G11C11/18 , G11C11/14 , G11C11/15 , G11C13/00 , G11C11/16 , G11C7/14
CPC分类号： G11C5/08 , G11C7/14 , G11C11/14 , G11C11/15 , G11C11/16 , G11C11/18 , G11C11/5607 , G11C13/0004 , G11C13/004 , G11C2013/0054 , G11C2213/79
摘要： A memory array includes a resistive memory cell array having a first cell transistor and a resistance change element connected in series and a reference cell array having a second cell transistor and a resistance element connected in series. The second cell transistor of the reference cell array is connected to a reference source line, and the resistance element is connected to a reference bit line. A dummy memory cell is connected to the reference bit line in the memory cell array, and both ends of a resistance change element of the dummy memory cell are short-circuited through the reference bit line.
摘要翻译：存储器阵列包括具有串联连接的第一单元晶体管和电阻变化元件的电阻式存储单元阵列和具有串联连接的第二单元晶体管和电阻元件的参考单元阵列。参考单元阵列的第二单元晶体管连接到参考源极线，并且电阻元件连接到参考位线。虚拟存储单元连接到存储单元阵列中的参考位线，并且虚拟存储单元的电阻变化元件的两端通过参考位线短路。

7. 发明授权

US09224941B2 System with magnetically stable states and method for asserting magnetically stable state 有权
标题翻译：具有磁稳定状态的系统和用于断言磁稳定状态的方法
公开(公告)号：US09224941B2
公开(公告)日：2015-12-29
申请号：US13809585
申请日：2010-08-31
申请人： Antonio Ruotolo
发明人： Antonio Ruotolo
IPC分类号： G11C11/16 , G11C11/14 , G11C11/02 , G11C11/18 , H01L43/08 , H01L27/22
CPC分类号： H01L43/08 , G11C11/02 , G11C11/14 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1693 , G11C11/18 , H01L27/222 , H01L27/228
摘要： The disclosed subject matter relates to a non-volatile memory bit cell (500 or 600) for solid-state data storage, including, e.g., an elongated magnetic element (102) or “dot”. For appropriate geometry and dimensions of the dot, a two-fold, energetically-degenerate micromagnetic configuration (100 or 200) can be stabilized. Such a stable configuration can consist of two magnetic vortices (1081, 1082) and a flower state region (110). Due to energy minimization, the flower state region can be off-center (relative to a minor axis (106)) and along the major axis (104) of the dot. An electrical current (302) flowing perpendicular to the plane at, or in proximity to, the dot center can, according to current polarity, switch the configuration or state of the dot between the two specular magnetically stable configurations (e.g., a write operation). Reading of the cell state can be accomplished by using the magnetoresistive effect.
摘要翻译：所公开的主题涉及用于固态数据存储的非易失性存储器位单元（500或600），包括例如细长磁性元件（102）或“点”。对于点的适当几何形状和尺寸，可以稳定两倍的能量退化微磁结构（100或200）。这种稳定的构造可以由两个磁旋涡（1081,1082）和花状态区域（110）组成。由于能量最小化，花状态区域可以偏心（相对于短轴（106））并且沿着点的长轴（104）。根据当前极性，垂直于该点处平面流动的电流（302）可以在两个镜面磁稳定配置（例如，写入操作）之间切换点的配置或状态，。电池状态的读取可以通过使用磁阻效应来实现。

8. 发明申请

US20150235713A1 Memory Devices Comprising Magnetic Tracks Individually Comprising A Plurality Of Magnetic Domains Having Domain Walls And Methods Of Forming A Memory Device Comprising Magnetic Tracks Individually Comprising A Plurality Of Magnetic Domains Having Domain Walls 审中-公开
标题翻译：包含单独包含多个具有畴壁的磁畴的磁迹的存储器件以及形成包含多个具有畴壁的磁畴的磁迹的存储器件的存储器件的方法
公开(公告)号：US20150235713A1
公开(公告)日：2015-08-20
申请号：US14701870
申请日：2015-05-01
申请人： Micron Technology, Inc.
发明人： Livio Baldi , Marcello Mariani
IPC分类号： G11C19/08 , H01L43/12 , H01L43/02
CPC分类号： G11C19/0808 , G11B5/4946 , G11C11/14 , G11C11/161 , G11C11/1675 , H01L43/02 , H01L43/12
摘要： A method of forming a memory device having magnetic tracks individually comprising a plurality of magnetic domains having domain walls, includes forming an elevationally outer substrate material of uniform chemical composition. The uniform composition material is partially etched into to form alternating regions of elevational depressions and elevational protrusions in the uniform composition material. A plurality of magnetic tracks is formed over and which angle relative to the alternating regions. Interfaces of immediately adjacent of the regions individually form a domain wall pinning site in individual of the magnetic tracks. Other methods, including memory devices independent of method, are disclosed.
摘要翻译：一种形成具有各自包含具有畴壁的多个磁畴的磁迹的存储器件的方法，包括形成具有均匀化学成分的正面外基材。均匀组合物材料被部分地蚀刻成均匀组成材料中的正面凹凸和高度突起的交替区域。在相对于交替区域形成多个磁道并且在哪个角度上形成多个磁迹。紧邻各区域的接口分别在磁迹中分别形成域壁钉扎位置。公开了其他方法，包括独立于方法的存储器件。

9. 发明授权

US09111855B2 Shift register memory and driving method thereof 有权
标题翻译：移位寄存器及其驱动方法
公开(公告)号：US09111855B2
公开(公告)日：2015-08-18
申请号：US14268701
申请日：2014-05-02
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yoshiaki Fukuzumi , Hideaki Aochi
IPC分类号： G11C11/00 , H01L27/22 , G11C19/02 , G11C19/08 , G11C11/14 , G11C11/15 , G11C11/16 , G11C11/155
CPC分类号： H01L27/228 , G11C11/14 , G11C11/15 , G11C11/155 , G11C11/16 , G11C11/161 , G11C11/1675 , G11C19/02 , G11C19/0808 , G11C19/0833 , H01L27/22 , H01L43/02
摘要： A shift register memory according to the present embodiment includes a magnetic pillar including a plurality of magnetic layers and a plurality of nonmagnetic layers provided between the magnetic layers adjacent to each other. A stress application part applies a stress to the magnetic pillar. A magnetic-field application part applies a static magnetic field to the magnetic pillar. The stress application part applies the stress to the magnetic pillar in order to transfer magnetization states of the magnetic layers in a stacking direction of the magnetic layers.
摘要翻译：根据本实施例的移位寄存器存储器包括具有多个磁性层的磁柱和设置在彼此相邻的磁性层之间的多个非磁性层。应力施加部分对磁柱施加应力。磁场施加部分将静磁场施加到磁柱。应力施加部分将应力施加到磁柱，以便在磁性层的堆叠方向上传递磁性层的磁化状态。

10. 发明申请

US20150221357A1 SPINTRONIC CIRCUIT AND METHOD OF OPERATION THEREFORE 有权
标题翻译：旋转电路及其操作方法
公开(公告)号：US20150221357A1
公开(公告)日：2015-08-06
申请号：US14415048
申请日：2013-07-03
申请人： Forschungsverbund Berlin e.V.
发明人： Yori Manzke , Rouin Farshchi , Manfred Ramsteiner
IPC分类号： G11C11/16 , G11C11/56 , H01L43/08 , G11C11/14
CPC分类号： G11C11/161 , G11C11/14 , G11C11/16 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C19/0808 , G11C29/50008 , H01L43/08
摘要： The invention relates to a spintronic circuit (10; 11; 15) comprising: a conductive non-magnetic channel (1); —means (2, NM, FM1-FM3) for generating spin polarized electrons (4) in the non-magnetic channel (1) by spin extraction; at least two ferromagnetic contacts (FM1-FM3) arranged along the non-magnetic channel (1) one after another, —means (7, 8, 9) for adjusting the magnetization direction of the ferromagnetic contacts (FM1-FM3); means for propagating the spin polarized electrons (4) along the non-magnetic channel (1); means (5, 6) for measuring the contact resistance of the individual ferromagnetic contacts (FM1-FM3), wherein the contact resistance depends on the relative alignment of the spin polarization direction of the spin polarized electrons (4) in the non-magnetic channel (1) at the ferromagnetic contact (FM1-FM3) and the magnetization direction of the ferromagnetic contact (FM1-FM3).
摘要翻译：本发明涉及一种自旋电子电路（10; 11; 15），包括：导电非磁通道（1）; 用于通过旋转提取在非磁通道（1）中产生自旋极化电子（4）的装置（2，NM，FM1-FM3）至少两个沿着非磁通道（1）排列的铁磁触点（FM1-FM3）， - 用于调节铁磁触点（FM1-FM3）的磁化方向的（7,8,9）。用于沿着非磁通道（1）传播自旋极化电子（4）的装置; 用于测量各个铁磁触点（FM1-FM3）的接触电阻的装置（5,6），其中接触电阻取决于非磁通道中自旋极化电子（4）的自旋极化方向的相对取向（FM1-FM3）和铁磁性接触（FM1-FM3）的磁化方向上的（1）。

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