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1. 发明授权

US09295656B2 Composition containing reduced coenzyme Q10 and production method thereof 有权
标题翻译：含有还原型辅酶Q10的组合物及其制备方法
公开(公告)号：US09295656B2
公开(公告)日：2016-03-29
申请号：US11812887
申请日：2007-06-22
申请人： Takashi Ueda , Shinsuke Akao , Shiro Kitamura , Hideyuki Kishida , Takahiro Ueda
发明人： Takashi Ueda , Shinsuke Akao , Shiro Kitamura , Hideyuki Kishida , Takahiro Ueda
IPC分类号： A61K31/122 , A61K9/00 , A61K9/16 , A61K9/20 , A61K9/48 , A61K9/107
CPC分类号： C07C50/28 , A61K9/0056 , A61K9/107 , A61K9/1652 , A61K9/1664 , A61K9/2018 , A61K9/4858 , A61K9/4875 , A61K31/122
摘要： The present invention provides a particulate composition wherein an oil component containing reduced coenzyme Q10 is polydispersed forming a domain in a matrix containing a water-soluble excipient, which simultaneously shows high oxidative stability and high oral absorbability, a production method thereof, and a stabilizing method thereof. It also provides a food, food with nutrient function claims, food for specified health uses, dietary supplement, nutritional product, animal drug, drink, feed, pet food, cosmetic, pharmaceutical product, therapeutic drug, prophylactic drug and the like, which contain the composition.
摘要翻译：本发明提供了一种颗粒组合物，其中含有还原型辅酶Q10的油成分是多分散的，在含有水溶性赋形剂的基质中形成一个结构域，其同时表现出高氧化稳定性和高口服吸收性，其制备方法和稳定化方法其中。它还提供食物，具有营养功能的食物，特定健康用途的食物，膳食补充剂，营养产品，动物药物，饮料，饲料，宠物食品，化妆品，药物，治疗药物，预防药物等，其含有组成。

2. 发明授权

US08492758B2 Oxide semiconductor film and semiconductor device 有权
公开(公告)号：US08492758B2
公开(公告)日：2013-07-23
申请号：US12887646
申请日：2010-09-22
申请人： Shunpei Yamazaki , Masayuki Sakakura , Ryosuke Watanabe , Junichiro Sakata , Kengo Akimoto , Akiharu Miyanaga , Takuya Hirohashi , Hideyuki Kishida
发明人： Shunpei Yamazaki , Masayuki Sakakura , Ryosuke Watanabe , Junichiro Sakata , Kengo Akimoto , Akiharu Miyanaga , Takuya Hirohashi , Hideyuki Kishida
IPC分类号： H01L29/12
CPC分类号： H01L29/78696 , H01L21/2636 , H01L27/1225 , H01L29/04 , H01L29/045 , H01L29/12 , H01L29/24 , H01L29/41733 , H01L29/66969 , H01L29/7869
摘要： It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

3. 发明授权

US08388950B2 Coenzyme Q10-containing water-soluble composition and process for production thereof 失效
标题翻译：含辅酶Q10的水溶性组合物及其生产方法
公开(公告)号：US08388950B2
公开(公告)日：2013-03-05
申请号：US11917454
申请日：2006-06-14
申请人： Toshinori Ikehara , Hideyuki Kishida
发明人： Toshinori Ikehara , Hideyuki Kishida
IPC分类号： A61K38/43
CPC分类号： A23K20/174 , A23L29/10 , A23L33/10 , A61K8/355 , A61K8/39 , A61K9/107 , A61K31/122 , A61K47/14 , A61K47/26 , A61Q19/00
摘要： A coenzyme Q10-containing water soluble composition comprises coenzyme Q10, a hydrophilic polyglycerol fatty acid ester, a lipophilic sucrose fatty acid ester and an aqueous phase component and a process for producing the same are disclosed. A coenzyme Q10-containing water-soluble dry powder can be obtained by drying the above-mentioned coenzyme Q10-containing water soluble composition. A food, functional food, beverage, pharmaceutical product, quasi drug, cosmetic, or animal food can be obtained by using the above-mentioned coenzyme Q10-containing water soluble composition or the above-mentioned coenzyme Q10-containing water-soluble dry powder. The coenzyme Q10-containing water soluble composition has a high bioavailability, and maintains a stable emulsion form for a long period of time from refrigeration temperature to room temperature and allows efficient supply.
摘要翻译：含有辅酶Q10的水溶性组合物包括辅酶Q10，亲水性聚甘油脂肪酸酯，亲脂性蔗糖脂肪酸酯和水相成分及其制造方法。可以通过干燥上述含有辅酶Q10的水溶性组合物来获得含辅酶Q10的水溶性干粉。可以通过使用上述含有辅酶Q10的水溶性组合物或上述含有辅酶Q10的水溶性干粉来获得食品，功能性食品，饮料，药物，准药物，化妆品或动物性食品。含有辅酶Q10的水溶性组合物具有高的生物利用度，并且从制冷温度到室温长时间保持稳定的乳液形式并且可以有效地供应。

4. 发明申请

US20120298998A1 METHOD FOR FORMING OXIDE SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于形成氧化物半导体膜的方法，半导体器件以及制造半导体器件的方法
公开(公告)号：US20120298998A1
公开(公告)日：2012-11-29
申请号：US13473653
申请日：2012-05-17
申请人： Shunpei YAMAZAKI , Masahiro WATANABE , Mitsuo MASHIYAMA , Kenichi OKAZAKI , Motoki NAKASHIMA , Hideyuki KISHIDA
发明人： Shunpei YAMAZAKI , Masahiro WATANABE , Mitsuo MASHIYAMA , Kenichi OKAZAKI , Motoki NAKASHIMA , Hideyuki KISHIDA
IPC分类号： H01L29/786 , H01L21/20
CPC分类号： H01L21/02631 , H01L21/02554 , H01L21/02565 , H01L29/66969 , H01L29/78603 , H01L29/78606 , H01L29/78618 , H01L29/7869
摘要： The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.
摘要翻译：氧化物半导体膜中的杂质浓度降低，可以获得高可靠性。

5. 发明申请

US20120228606A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120228606A1
公开(公告)日：2012-09-13
申请号：US13413714
申请日：2012-03-07
申请人： Junichi KOEZUKA , Shinji OHNO , Yuichi SATO , Masahiro TAKAHASHI , Hideyuki KISHIDA
发明人： Junichi KOEZUKA , Shinji OHNO , Yuichi SATO , Masahiro TAKAHASHI , Hideyuki KISHIDA
IPC分类号： H01L29/78 , H01L21/44
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/045 , H01L29/66969 , H01L29/78693 , H01L29/78696
摘要： The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.
摘要翻译：半导体器件包括具有第一区域和一对第二区域的氧化物半导体膜，第一区域和第二区域彼此面对，其间设置有第一区域，氧化物半导体膜上的栅极绝缘膜和与第一区域重叠的第一电极，栅极绝缘膜。第一区域是包括c轴取向晶体部分的非单晶氧化物半导体区域。所述一对第二区域是含有掺杂剂且包含多个晶体部分的氧化物半导体区域。

6. 发明申请

US20100264412A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100264412A1
公开(公告)日：2010-10-21
申请号：US12759220
申请日：2010-04-13
申请人： Shunpei YAMAZAKI , Hiromichi GODO , Hideyuki KISHIDA
发明人： Shunpei YAMAZAKI , Hiromichi GODO , Hideyuki KISHIDA
IPC分类号： H01L29/22 , H01L21/363
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L27/12 , H01L27/1225 , H01L27/1255 , H01L29/66969 , H01L29/78609 , H01L29/78618 , H01L29/78696
摘要： An object is to provide a transistor including an oxide layer which includes Zn and does not include a rare metal such as In or Ga. Another object is to reduce an off current and stabilize electric characteristics in the transistor including an oxide layer which includes Zn. A transistor including an oxide layer including Zn is formed by stacking an oxide semiconductor layer including insulating oxide over an oxide layer so that the oxide layer is in contact with a source electrode layer or a drain electrode layer with the oxide semiconductor layer including insulating oxide interposed therebetween, whereby variation in the threshold voltage of the transistor can be reduced and electric characteristics can be stabilized.
摘要翻译：本发明的目的是提供一种包括包含Zn并且不包括诸如In或Ga的稀有金属的氧化物层的晶体管。另一个目的是减少包括含有Zn的氧化物层的晶体管中的截止电流和稳定电特性。包括含有Zn的氧化物层的晶体管通过在氧化物层上层叠包含绝缘氧化物的氧化物半导体层而形成，使得氧化物层与源极电极层或漏极电极层接触，其中氧化物半导体层包括绝缘氧化物从而可以减小晶体管的阈值电压的变化，并且可以使电特性稳定。

7. 发明申请

US20100123130A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100123130A1
公开(公告)日：2010-05-20
申请号：US12618944
申请日：2009-11-16
申请人： Kengo AKIMOTO , Junichiro SAKATA , Takuya HIROHASHI , Masahiro TAKAHASHI , Hideyuki KISHIDA , Akiharu MIYANAGA
发明人： Kengo AKIMOTO , Junichiro SAKATA , Takuya HIROHASHI , Masahiro TAKAHASHI , Hideyuki KISHIDA , Akiharu MIYANAGA
IPC分类号： H01L29/12 , H01L21/04
CPC分类号： H01L29/7869 , H01L21/02565 , H01L21/28079 , H01L21/28158 , H01L29/04 , H01L29/66742 , H01L29/66969 , H01L29/78693
摘要： It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).
摘要翻译：本发明的目的是提供一种适用于半导体器件的氧化物半导体。或者，另一目的是提供一种使用氧化物半导体的半导体器件。提供了在晶体管的沟道形成区域中包括In-Ga-Zn-O系氧化物半导体层的半导体器件。在半导体器件中，In-Ga-Zn-O系氧化物半导体层具有以InGaO 3（ZnO）m（m = 1）表示的晶粒包含在由InGaO 3（ZnO）m（ m> 0）。

8. 发明申请

US20070098761A1 Processed fat composition for preventing/ameliorating lifestyle-related diseases 审中-公开
标题翻译：用于预防/改善生活方式相关疾病的加工脂肪组合物
公开(公告)号：US20070098761A1
公开(公告)日：2007-05-03
申请号：US10560900
申请日：2004-07-14
申请人： Naoki Arai , Hideyuki Kishida , Toshinori Ikehara , Tatsumasa Mae
发明人： Naoki Arai , Hideyuki Kishida , Toshinori Ikehara , Tatsumasa Mae
IPC分类号： A61K9/48 , A61K47/00
CPC分类号： A61K36/484 , A23L33/105 , A23L33/115 , A23V2002/00 , A61K9/4858 , A61K31/352 , A61K31/353 , A23V2200/332
摘要： The object of the invention is to provide a composition for prevention and/or amelioration of life-style related disease, and/or a composition for inhibition and/or amelioration of increase in body weight, comprising at least one compound selected from the group consisting of glabrene, glabridin, glabrol, 3′-hydroxy-4′-O-methylglabridin, 4′-O-methylglabridin and hyspaglabridin B as compounds having a PPAR ligand activity effective in amelioration of insulin resistance and in prevention and/or amelioration of life-style related diseases such as visceral fat obesity, type 2 diabetes, hyperlipemia and hypertension, which can be utilized in food and drink such as health food and health functional food (food for specified uses and food with nutrient function), pharmaceutical preparations, non-pharmaceutical preparations, cosmetics etc. At least one compound selected from the group consisting of glabrene, glabridin, glabrol, 3′-hydroxy-4′-O-methylglabridin, 4′-O-methylglabridin and hyspaglabridin B is dissolved in medium-chain fatty acid triglycerides and/or partial glycerides, whereby the stability of the compound(s) is improved and the processability thereof into food and drink, pharmaceutical preparations, non-pharmaceutical preparations, cosmetics etc. is also improved.
摘要翻译：本发明的目的是提供一种用于预防和/或改善生命方式相关疾病的组合物和/或用于抑制和/或改善体重增加的组合物，其包含至少一种选自以下的化合物： glabrene，glabridin，glabrol，3'-羟基-4'-O-甲基吡咯啶，4'-O-甲基吡咯啶和嗜麦芽窄食idin宾B作为具有有效改善胰岛素抵抗和预防和/或改善生命的PPAR配体活性的化合物类风湿性关节疾病，如内脏脂肪肥胖，2型糖尿病，高脂血症和高血压，可用于食品和饮料，如保健食品和保健功能食品（特定用途的食品和营养功能食品），药物制剂，药物制剂，化妆品等。至少一种选自由Glabrene，glabridin，glabrol，3'-羟基-4'-O-甲基吡咯啶，4'-O-甲基吡咯烷和hyspaglab ridin B溶解在中链脂肪酸甘油三酯和/或部分甘油酯中，从而提高了化合物的稳定性，并且其加工成食品和饮料，药物制剂，非药物制剂，化妆品等也是改进。

9. 发明授权

US09184296B2 Semiconductor device having c-axis aligned portions and doped portions 有权
标题翻译：具有c轴对准部分和掺杂部分的半导体器件
公开(公告)号：US09184296B2
公开(公告)日：2015-11-10
申请号：US13413714
申请日：2012-03-07
申请人： Junichi Koezuka , Shinji Ohno , Yuichi Sato , Masahiro Takahashi , Hideyuki Kishida
发明人： Junichi Koezuka , Shinji Ohno , Yuichi Sato , Masahiro Takahashi , Hideyuki Kishida
IPC分类号： H01L29/04 , H01L29/786 , H01L27/12 , H01L29/66
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/045 , H01L29/66969 , H01L29/78693 , H01L29/78696
摘要： The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.
摘要翻译：半导体器件包括具有第一区域和一对第二区域的氧化物半导体膜，第一区域和第二区域彼此面对，其间设置有第一区域，氧化物半导体膜上的栅极绝缘膜和与第一区域重叠的第一电极，栅极绝缘膜。第一区域是包括c轴取向晶体部分的非单晶氧化物半导体区域。所述一对第二区域是含有掺杂剂且包含多个晶体部分的氧化物半导体区域。

10. 发明授权

US08816349B2 Semiconductor device comprising oxide semiconductor layer 有权
标题翻译：包括氧化物半导体层的半导体器件
公开(公告)号：US08816349B2
公开(公告)日：2014-08-26
申请号：US12898357
申请日：2010-10-05
申请人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Junpei Sugao , Hideki Uochi , Yasuo Nakamura
发明人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Junpei Sugao , Hideki Uochi , Yasuo Nakamura
IPC分类号： H01L27/14
CPC分类号： H01L29/7869 , H01L21/02164 , H01L21/0217 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/324 , H01L21/76801 , H01L21/76828 , H01L21/76838 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/78606
摘要： By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
摘要翻译：通过使用包含Cu的导电层作为长引线，可以抑制布线电阻的增加。此外，包括Cu的导电层以与形成TFT的沟道区域的氧化物半导体层不重叠并被包括氮化硅的绝缘层包围的方式设置，由此Cu的扩散可以防止因此，可以制造高度可靠的半导体器件。具体地说，作为半导体装置的一个实施方式的显示装置，即使在尺寸或定义增加的情况下也能够具有高的显示质量，并且稳定地工作。

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