专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

2. 发明申请

US20120305194A1 Etching Device, Plasma Processing Device 审中-公开
标题翻译：蚀刻装置，等离子体处理装置
公开(公告)号：US20120305194A1
公开(公告)日：2012-12-06
申请号：US13578739
申请日：2010-11-25
申请人： Yasuyuki Hayashi , Kenichi Tomisaka
发明人： Yasuyuki Hayashi , Kenichi Tomisaka
IPC分类号： B05C13/02
CPC分类号： H01J37/32623 , H01J37/321
摘要： A plasma processing device capable of positioning a protective member for covering the upper surface of a peripheral edge portion of a substrate, with high accuracy. A plasma processing device has, a platen on which a substrate K is placed, a gas supply device, a plasma generating device, an RF power supply unit, an annular and plate-shaped protective member configured to be capable of being placed on a peripheral portion of the platen and which covers a peripheral edge portion of the substrate K, support members 35 supporting the protective member, and a lifting cylinder lifting up and down the platen. At least three first protrusions which are engaged with the peripheral portion of the platen are formed on a pitch circle on the lower surface of the protective member and the center of the pitch circle is co-axial with the central axis of the protective member.
摘要翻译：一种能够高精度地定位用于覆盖基板的周缘部的上表面的保护部件的等离子体处理装置。等离子体处理装置具有放置基板K的压板，气体供给装置，等离子体产生装置，RF电源单元，被配置为能够放置在周边的环形和板状保护构件压板的一部分，覆盖基板K的周边部分，支撑保护部件的支撑部件35以及升降压板上下升降。在保护构件的下表面上的节圆上形成有与台板的周边部分接合的至少三个第一突起，并且节圆的中心与保护构件的中心轴线同轴。

IPRDB

热门服务

关于我们

友情链接

联系方式