专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4530099A Planar narrow-stripe laser with improved charge carrier confinement 失效
标题翻译：平面窄带激光器，具有改进的电荷载流子限制
公开(公告)号：US4530099A
公开(公告)日：1985-07-16
申请号：US448383
申请日：1982-12-09
申请人： Kiu-chi D. Chik
发明人： Kiu-chi D. Chik
IPC分类号： H01S5/20 , H01S3/19
CPC分类号： H01S5/20 , H01S5/2059
摘要： Double heterostructure lasers which use a narrow stripe contact exhibit linear characteristics with a low lasing threshold current making them very suitable for fiber optic communication systems. Linearity and low threshold currents are achieved if the carrier current injected into the device is confined to a narrow region of the active layer. To further confine the current a p-type diffusion is performed to produce a relatively low conductivity path between the contact stripe and the lasing region of the active layer. Ideally the diffusion front extends to within 0.5 microns of the active layer. In order to achieve this, a p-type double heterostructure second confining layer of 0.5 microns or less is grown immediately adjacent to the active layer and an n-type blocking layer is grown on the second confining layer. By diffusing the p-type dopant through the n-type blocking layer the diffusion front can be accurately monitored using a scanning electron microscope. As soon as the diffusion front merges with the p-type second confining layer then it can be concluded that it is within 0.5 microns of the active layer. Moreover the pn junction between the second confining layer and the blocking layer is reverse biased in use and so provides further charge carrier confinement in comparison with the conventional wholly p-type second confining layer which is usually of the order of 1.5 .mu.m thick.
摘要翻译：使用窄条纹接触的双异质结构激光器具有低激光阈值电流的线性特性，使得它们非常适合于光纤通信系统。如果注入到器件中的载流子电流限制在有源层的窄区域，则可实现线性和低阈值电流。为了进一步限制电流，执行p型扩散以在触点条和有源层的激光区之间产生相对低的导电路径。理想地，扩散前沿延伸到活性层的0.5微米内。为了实现这一点，紧邻有源层生长0.5微米或更小的p型双异质结构第二约束层，并且在第二限制层上生长n型阻挡层。通过n型阻挡层扩散p型掺杂剂，可以使用扫描电子显微镜来精确地监测扩散前沿。一旦扩散前沿与p型第二限制层合并，则可以得出结论，其在有源层的0.5微米内。此外，第二限制层和阻挡层之间的pn结在使用中是反向偏置的，因此与通常为1.5μm厚的普通的p型第二限制层相比，提供了进一步的电荷载流子约束。

2. 发明授权

US4489477A Method for screening laser diodes 失效
标题翻译：激光二极管筛选方法
公开(公告)号：US4489477A
公开(公告)日：1984-12-25
申请号：US582956
申请日：1984-02-23
申请人： Kiu-Chi D. Chik , Tibor F. Devenyi , John C. Dyment
发明人： Kiu-Chi D. Chik , Tibor F. Devenyi , John C. Dyment
IPC分类号： G01R31/26 , H01S5/00 , H01S5/40 , G01R31/36
CPC分类号： G01R31/2642 , G01R31/2635 , H01S5/0014 , H01S5/0021 , H01S5/4025
摘要： A method for screening double heterostructure laser diodes before mounting and packaging is disclosed. At a normal laser diode operating temperature, a range of pulsed current is passed through the laser diode and the lasing threshold current and slope efficiency of the laser diode are monitored. The laser diode is then subjected to a burn-in process in which it is driven at a high junction temperature for an extended time period. Subsequently the lasing threshold current and slope efficiency are again monitored by applying the same range of pulsed current at the normal operating temperature. If either the threshold current or the slope efficiency have changed by more than a predetermined amount, the laser diode is rejected. Otherwise, the laser diode is gauged as likely to have a lifetime greater than a predetermined value at normal operating conditions so warranting further testing prior to installation into a laser package.
摘要翻译：公开了在安装和包装之前筛选双异质结激光二极管的方法。在正常的激光二极管工作温度下，脉冲电流的范围通过激光二极管，并监测激光二极管的激光阈值电流和斜率效率。然后激光二极管进行老化过程，其中它在高结温下延长时间段。随后，通过在正常工作温度下施加相同的脉冲电流范围，再次监测激光阈值电流和斜率效率。如果阈值电流或斜率效率已经改变了超过预定量，则激光二极管被拒绝。否则，激光二极管在正常操作条件下被测量为可能具有大于预定值的寿命，因此在安装到激光器封装之前需要进一步的测试。

3. 发明授权

US4325034A Semiconductor lasers with integrally formed light emitting diodes 失效
标题翻译：具有整体形成的发光二极管的半导体激光器
公开(公告)号：US4325034A
公开(公告)日：1982-04-13
申请号：US121172
申请日：1980-02-13
申请人： John C. Dyment , Christopher M. Look , Kiu-Chi D. Chik
发明人： John C. Dyment , Christopher M. Look , Kiu-Chi D. Chik
IPC分类号： H01L27/15 , H01S5/026 , H01S5/06 , H01S5/40 , H01S3/19
CPC分类号： H01S5/026 , H01L27/15 , H01S5/0608 , H01S5/4006 , H01S5/4031
摘要： Semiconductor lasers exhibit transient relaxation oscillation on start-up and specific lasers often exhibit sustained spontaneous pulsations caused probably by crystalline defects. These fluctuations are suppressed in a laser having an integrally formed light emitting diode (LED) which generates spontaneous light which is coupled into the laser by virtue of the close proximity of the laser and the light emitting diode.
摘要翻译：半导体激光器在启动时表现出瞬态弛豫振荡，并且特定激光器通常表现出可能由结晶缺陷引起的持续自发脉动。在具有整体形成的发光二极管（LED）的激光器中，这些波动被抑制，该发光二极管（LED）通过激光器和发光二极管的紧密接合而产生耦合到激光器中的自发光。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式