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1. 发明授权

US07012944B2 Structure and manufacturing method for single-wavelength and multi-wavelength distributed feedback lasers 有权
标题翻译：单波长和多波长分布反馈激光器的结构和制造方法
公开(公告)号：US07012944B2
公开(公告)日：2006-03-14
申请号：US10636103
申请日：2003-08-07
申请人： San-Liang Lee , Ing-Fa Jang
发明人： San-Liang Lee , Ing-Fa Jang
IPC分类号： H01S3/19 , H01S3/08
CPC分类号： H01S5/12 , H01S5/0654 , H01S5/1203 , H01S5/1209 , H01S5/4087 , H01S2301/173 , H01S2304/00
摘要： A single-wavelength distributed feedback (DFB) laser structure is provided. The laser structure having two sections includes an active-material layer for generating a laser having a wavelength in a specific range, two cladding layers respectively covering an upper and a bottom sides of the active-material layer for forming a waveguide structure, a phase shift layer having a specific thickness for controlling a difference between Bragg wavelengths of the two sections, a wet-etching stop layer positioned between the active-material layer and the phase shift layer, and a grating layer having a specific period for determining an illuminating wavelength, wherein a difference between the two sections is an existence of the phase shift layer thereon, and the existence of the phase shift layer causes a difference of the effective refractive indices between the two sections so as to generate a fixed difference between Bragg wavelengths of the two sections.
摘要翻译：提供单波长分布反馈（DFB）激光器结构。具有两个部分的激光器结构包括用于产生具有特定范围波长的激光的活性材料层，分别覆盖用于形成波导结构的活性材料层的上侧和下侧的两个包覆层，相移具有用于控制两个部分的布拉格波长之间的差异的特定厚度的层，位于活性材料层和相移层之间的湿蚀刻停止层以及具有用于确定照明波长的特定周期的光栅层，其中两部分之间的差异是其上的相移层的存在，并且相移层的存在导致两部分之间的有效折射率差异，以便产生两个部分的布拉格波长之间的固定差异部分。

2. 发明授权

US6134257A Solid state laser for operation in librational modes 失效
标题翻译：固态激光器用于演示模式
公开(公告)号：US6134257A
公开(公告)日：2000-10-17
申请号：US63577
申请日：1998-04-21
申请人： Federico Capasso , Alfred Yi Cho , Jerome Faist , Claire F. Gmachl , Deborah Lee Sivco , Evgueni E. Narimanov , Alfred Douglas Stone , Jens Uwe Noeckel
发明人： Federico Capasso , Alfred Yi Cho , Jerome Faist , Claire F. Gmachl , Deborah Lee Sivco , Evgueni E. Narimanov , Alfred Douglas Stone , Jens Uwe Noeckel
IPC分类号： H01S5/00 , H01S3/08 , H01S3/083 , H01S5/065 , H01S5/10 , H01S5/323 , H01S5/343 , H01S3/18 , H01S3/19
CPC分类号： H01S3/083
摘要： A solid state laser comprises a cavity resonator in the form of a generally cylindrical body and, located within the resonator, an active region which generates lasing light when suitably pumped. The resonator has a relatively high effective refractive index (n>2 and typically n>3) is sufficiently deformed from circularity so as to support at least one librational mode (e.g., a V-shaped or a bow-tie mode, the latter being presently preferred for generating relatively high power, directional outputs). Specifically described is a Group III-V compound semiconductor, quantum cascade (QC), micro-cylinder laser in which the resonator has a flattened quadrupolar deformation from circularity. This laser exhibits both a highly directional output emission and a three-order of magnitude increase in optical output power compared to conventional semiconductor micro-cylinder QC lasers having circularly symmetric resonators.
摘要翻译：固体激光器包括呈大致圆柱形体形式的空腔谐振器，并且位于谐振器内部的有源区域，其在适当泵浦时产生激光。谐振器具有相对较高的有效折射率（n> 2且通常n> 3）从圆形度充分变形，以便支持至少一种示范模式（例如，V形或蝴蝶结模式，后者为目前优选用于产生相对高功率的方向输出）。具体描述的是其中谐振器具有从圆形度的扁平四极变形的III-V族化合物半导体，量子级联（QC），微圆柱激光器。与具有圆形对称谐振器的常规半导体微型气缸QC激光器相比，该激光器表现出高度方向性的输出发射和光输出功率三位数的增加。

3. 发明授权

US6122303A Single transverse mode semiconductor laser for an optical transmission link 失效
标题翻译：用于光传输链路的单横模半导体激光器
公开(公告)号：US6122303A
公开(公告)日：2000-09-19
申请号：US25888
申请日：1998-02-18
申请人： Jo S. Major, Jr.
发明人： Jo S. Major, Jr.
IPC分类号： H01S5/068 , H01S5/343 , H04B10/155 , H04B10/158 , H01S3/19
CPC分类号： H01S5/3434 , B82Y20/00 , H01S5/34313 , H04B10/504 , H04B10/6911 , H04B10/6932 , H01S5/068 , H01S5/34306
摘要： A single transverse mode semiconductor laser diode source is designed for employment in an optical transmission link comprising a transmitter module and a receiver module operable under uncooled conditions, i.e., without the need of costly cooling equipment, such as thermoelectric coolers. The optical transmission system includes both the semiconductor laser diode source and the optical receiver module that are both designed to operate uncooled under high frequencies (e.g., GHz range) over a wide temperature range without significant changes in signal bandwidth and at temperatures in excess of 125.degree. C.
摘要翻译：单个横模半导体激光二极管源设计用于光传输链路中，该光传输链路包括可在非冷却条件下操作的发射机模块和接收机模块，即不需要昂贵的冷却设备，例如热电冷却器。光传输系统包括半导体激光二极管源和光接收器模块，两者都被设计成在宽的温度范围内在高频（例如，GHz范围）下不经过冷却而在没有信号带宽的显着变化和超过125的温度下运行 DEG C.

4. 发明授权

US6097748A Vertical cavity surface emitting laser semiconductor chip with integrated drivers and photodetectors and method of fabrication 失效
标题翻译：具有集成驱动器和光电探测器的垂直腔表面发射激光半导体芯片及其制造方法
公开(公告)号：US6097748A
公开(公告)日：2000-08-01
申请号：US80152
申请日：1998-05-18
申请人： Rong-Ting Huang , Chan-Long Shieh , Michael S. Lebby
发明人： Rong-Ting Huang , Chan-Long Shieh , Michael S. Lebby
IPC分类号： H01S5/026 , H01S5/183 , H01S3/19
CPC分类号： H01S5/0262 , H01S5/0261 , H01S5/0264 , H01S5/183
摘要： A vertical cavity surface emitting laser semiconductor chip including a vertical cavity surface emitting laser (VCSEL) formed on a substrate, a photodetector, integrated with the vertical cavity surface emitting laser for automatic power control (APC) of the vertical cavity surface emitting laser and a driver circuit, integrated with the vertical cavity surface emitting laser and the photodetector. The VCSEL, photodetector and driver circuit are integrated by utilizing a monolithic polysilicon layer. The driver circuit is characterized as a CMOS driver circuit, capable of receiving feedback from the photodetector and adjusting the output power of the vertical cavity surface emitting laser in response to the feedback, thus achieving APC of the VCSEL.
摘要翻译：一种垂直腔表面发射激光半导体芯片，包括形成在衬底上的垂直腔表面发射激光器（VCSEL），与用于垂直腔表面发射激光器的自动功率控制（APC）的垂直腔表面发射激光器集成的光电检测器，驱动电路，与垂直腔表面发射激光器和光电检测器集成。 VCSEL，光电检测器和驱动电路通过利用单片多晶硅层进行集成。驱动器电路的特征在于CMOS驱动电路，其能够接收来自光电检测器的反馈并且响应于反馈调整垂直腔表面发射激光器的输出功率，从而实现VCSEL的APC。

5. 发明授权

US6091753A Article comprising an improved superlattice quantum cascade laser 失效
标题翻译：文章包括改进的超晶格量子级联激光器
公开(公告)号：US6091753A
公开(公告)日：2000-07-18
申请号：US71219
申请日：1998-05-01
申请人： Federico Capasso , Alfred Yi Cho , Jerome Faist , Claire F. Gmachl , Albert Lee Hutchinson , Deborah Lee Sivco , Alessandro Tredicucci
发明人： Federico Capasso , Alfred Yi Cho , Jerome Faist , Claire F. Gmachl , Albert Lee Hutchinson , Deborah Lee Sivco , Alessandro Tredicucci
IPC分类号： H01S5/00 , H01S5/042 , H01S5/30 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/3402 , H01S5/0421 , H01S5/305
摘要： A novel superlattice quantum cascade (SLQC) laser has undoped SL active regions, with the dopant concentration in the injector region being selected, such that, under an appropriate electrical bias, the SL active region is substantially electric field free. The absence of dopant atoms in the SL active region results in reduced carrier scattering and reduced optical losses, with consequent low threshold current and/or room temperature operation. The novel laser emits in the mid-IR spectral region and can be advantageously used in measurement or monitoring systems, e.g., in pollution monitoring systems.
摘要翻译：新型超晶格量子级联（SLQC）激光器具有未掺杂的SL活性区域，其中选择注入器区域中的掺杂剂浓度，使得在适当的电偏压下，SL有源区域基本上不含电场。在SL有源区域中不存在掺杂剂原子导致减少的载流子散射和减少的光学损耗，从而导致低阈值电流和/或室温操作。新型激光器在中红外光谱区域中发射，并且可以有利地用于测量或监测系统，例如在污染监测系统中。

6. 发明授权

US6078603A Semiconductor diode laser, and method of manufacturing thereof 失效
标题翻译：半导体二极管激光器及其制造方法
公开(公告)号：US6078603A
公开(公告)日：2000-06-20
申请号：US988597
申请日：1997-12-11
申请人： Leo M. Weegels , Henricus M. De Vrieze , Maria H. C. Vermeulen-Hartjes
发明人： Leo M. Weegels , Henricus M. De Vrieze , Maria H. C. Vermeulen-Hartjes
IPC分类号： H01S5/065 , H01S5/02 , H01S5/028 , H01S5/062 , H01S5/10 , H01S5/32 , H01S3/19
CPC分类号： H01S5/06216 , H01S5/028 , H01S5/0658 , H01S5/10 , H01S5/1082
摘要： A diode laser is disclosed that is self-pulsating without an increase in the starting current or a decrease in the efficiency. A special coating on an end face of the laser comprises in order a first mirror, a medium having an optical thickness which is at least substantially equal to an integer number of times half the wavelength of the generated electromagnetic radiation, and a second mirror. The coating comprises exclusively materials which have a higher bandgap value than that which corresponds to the wavelength of the generated radiation, while the reflectivities of the mirrors and the deviation of the optical thickness of the medium with respect to an integer number of times half the emission wavelength are chosen such that the group velocity dispersion (GVD) adjacent the wavelength of the generated electromagnetic radiation is negative, and preferably a minimum. Pulse widening owing to pulses arising from automatic mode locking is no longer possible due to a sufficiently negative group velocity dispersion. A laser exhibiting stable self-pulsation is thus provided.
摘要翻译：公开了一种二极管激光器，其在不增加启动电流或效率降低的情况下是自脉动的。激光器端面上的特殊涂层按顺序包括第一反射镜，具有至少基本上等于产生的电磁辐射的波长的一半的光学厚度的介质和第二反射镜。涂层仅包括具有比对应于所产生的辐射的波长的带隙值更高的带隙值的材料，而反射镜的反射率和介质的光学厚度相对于发射的一半的整数倍的偏差选择波长，使得与所产生的电磁辐射的波长相邻的群速度色散（GVD）为负，优选为最小。由于自动模式锁定引起的脉冲，由于充分的负组速度色散，不再可能产生脉冲加宽。因此提供了表现出稳定的自脉动的激光。

7. 发明授权

US6069908A N-drive or P-drive VCSEL array 失效
标题翻译： N驱动或P驱动VCSEL阵列
公开(公告)号：US6069908A
公开(公告)日：2000-05-30
申请号：US20724
申请日：1998-02-09
申请人： Albert T. Yuen , Michael R. T. Tan , Chun Lei
发明人： Albert T. Yuen , Michael R. T. Tan , Chun Lei
IPC分类号： H01S5/00 , H01S5/02 , H01S5/042 , H01S5/183 , H01S5/187 , H01S5/42 , H01S3/19
CPC分类号： H01S5/183 , H01S5/423 , H01S5/0208 , H01S5/0422
摘要： A VCSEL that is adapted to the fabrication of an array of VCSELs. A VCSEL array according to the present invention includes first and second VCSELs for generating light of a predetermined wavelength. Each VCSEL includes a bottom reflector comprising an epitaxial layer of a semiconductor of a first conductivity type, a light generation region and a top reflector comprising a semiconductor of a second conductivity type. A bottom electrode is electrically connected to the bottom reflector, and a top electrode is electrically connected to the top reflector. The bottom electrode is grown on top of a buffer layer having an electrical conductivity less than a predetermined value and a crystalline structure that permits epitaxial growth of the bottom reflector on the buffer layer. The buffer layer may be grown on top of a substrate or be the substrate itself in the case in which a substrate having sufficiently low conductivity is utilized. The bottom reflector of each of the VCSELs is in contact with the top of the buffer layer. The first and second VCSELs are electrically isolated from one another by a trench extending into the buffer layer. The buffer layer is constructed from a material having resistivity that is sufficiently low to prevent cross-talk between the first and second VCSELs.
摘要翻译：适用于制造VCSEL阵列的VCSEL。根据本发明的VCSEL阵列包括用于产生预定波长的光的第一和第二VCSEL。每个VCSEL包括底部反射器，其包括第一导电类型的半导体的外延层，发光区域和包括第二导电类型的半导体的顶部反射器。底部电极电连接到底部反射器，并且顶部电极电连接到顶部反射器。底部电极生长在具有小于预定值的电导率的缓冲层的顶部上，并且允许底部反射器在缓冲层上外延生长的晶体结构。在使用具有足够低的导电性的基板的情况下，可以在衬底的顶部生长缓冲层或者作为衬底本身。每个VCSEL的底部反射器与缓冲层的顶部接触。第一和第二VCSEL通过延伸到缓冲层中的沟槽彼此电隔离。缓冲层由具有足够低的电阻率的材料构成，以防止第一和第二VCSEL之间的串扰。

8. 发明授权

US6066859A Opto-electronic component with MQW structures 失效
标题翻译：具有MQW结构的光电组件
公开(公告)号：US6066859A
公开(公告)日：2000-05-23
申请号：US990515
申请日：1997-12-15
申请人： Bernhard Stegmueller
发明人： Bernhard Stegmueller
IPC分类号： H01L29/06 , G02F1/017 , H01S5/00 , H01S5/026 , H01S5/12 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , G02F1/017 , H01S5/0265 , H01S5/12 , H01S5/343
摘要： An opto-electronic component with two MQW structures having different functions, wherein the layer sequences that form these MQW structures are grown in a single epitaxy process of uniform layers in every layer plane. In an embodiment, a laser diode-modulator combination is provided wherein the MQW layer sequence of the laser is preferably arranged within the MQW layer sequence of the modulator.
摘要翻译：具有两个具有不同功能的MQW结构的光电子部件，其中形成这些MQW结构的层序列在每个层平面中以均匀层的单个外延工艺生长。在一个实施例中，提供了激光二极管 - 调制器组合，其中激光器的MQW层序列优选地被布置在调制器的MQW层序列内。

9. 发明授权

US6055255A Semiconductor laser device and method for producing the same 失效
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US6055255A
公开(公告)日：2000-04-25
申请号：US790815
申请日：1997-01-30
申请人： Takahiro Suyama , Ken Ohbayashi , Mitsuhiro Matsumoto
发明人： Takahiro Suyama , Ken Ohbayashi , Mitsuhiro Matsumoto
IPC分类号： H01S5/06 , H01S5/065 , H01S5/22 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/0601 , H01S5/0658 , H01S5/2219
摘要： A semiconductor laser device includes: a semiconductor substrate of a first conductivity type; a layered structure including at least a first cladding layer of the first conductivity type, an active layer, and a second cladding layer of a second conductivity type. The layered structure is provided on the semiconductor substrate. The semiconductor laser device also includes: a current blocking structure, having a striped concave portion therein, formed on the layered structure; and a third cladding layer of the second conductivity type provided so as to cover the striped concave portion and the current blocking structure. The current blocking structure includes at least a saturable absorbing layer having a forbidden band width which is substantially equal to a forbidden band width of the active layer.
摘要翻译：半导体激光器件包括：第一导电类型的半导体衬底; 包括至少第一导电类型的第一包层，有源层和第二导电类型的第二包层的层状结构。层状结构设置在半导体基板上。半导体激光装置还包括：形成在层状结构上的具有条纹凹部的电流阻挡结构; 以及第二导电类型的第三包覆层，以覆盖条纹凹部和电流阻挡结构。电流阻挡结构至少包括具有禁带宽度的可饱和吸收层，其基本上等于有源层的禁带宽度。

10. 发明授权

US6055254A Quantum cascade light emitter with pre-biased internal electronic potential 有权
标题翻译：量子级联发光器具有预偏置内部电子电位
公开(公告)号：US6055254A
公开(公告)日：2000-04-25
申请号：US159127
申请日：1998-09-23
申请人： Federico Capasso , Alfred Yi Cho , Claire F. Gmachl , Albert Lee Hutchinson , Deborah Lee Sivco , Alessandro Tredicucci
发明人： Federico Capasso , Alfred Yi Cho , Claire F. Gmachl , Albert Lee Hutchinson , Deborah Lee Sivco , Alessandro Tredicucci
IPC分类号： H01L29/06 , H01L29/15 , H01S5/34 , H01S5/343 , H01S3/18 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/3402
摘要： Instead of trying to keep the SLs of a QC laser field free, we "pre-bias" the actual electronic potential by varying the SL period (and hence average composition) so as to achieve an essentially flat profile, on average, of upper and lower minibands, despite the presence of an applied field in the SLs. In one embodiment, in at least a first subset of the QW layers, the thicknesses of the QW layers are varied from QW layer to QW layer so as to increase in the direction of the applied field. In this embodiment, the upper and lower lasing levels are located, in the absence of an applied electric field, each at different energies from layer to layer within the first subset, so that despite the presence of an applied field, the desired flatband condition of the upper and lower minibands is realized. In a preferred embodiment, the thicknesses of the QW layers within the first subset are varied from QW layer to QW layer so as to increase in the direction of the applied field, and the thicknesses of a second subset of the barrier layers are also varied from barrier layer to barrier layer so as to decrease or increase in the direction of the applied field.
摘要翻译：不要试图保持QC激光场的SL不受限制，我们通过改变SL周期（因此平均组成）来“预先偏置”实际的电子电位，以便平均地获得上部和尽管在SL中存在应用场，但是较低的迷你频段。在一个实施例中，在QW层的至少第一子集中，QW层的厚度从QW层到QW层变化，以便在施加场的方向上增加。在该实施例中，在没有所施加的电场的情况下，上和下激光电平各自处于第一子集内的层与层之间的不同能量，使得尽管存在施加的场，但是期望的平带条件实现上下两个迷你吧。在优选实施例中，第一子集内的QW层的厚度从QW层到QW层变化，以便在施加的场的方向上增加，并且阻挡层的第二子集的厚度也从阻挡层到阻挡层，以便在施加的场的方向上减小或增加。

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