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1. 发明授权

US09204068B2 Solid-state photodiode imaging device and method of manufacturing the same 有权
标题翻译：固态光电二极管成像装置及其制造方法
公开(公告)号：US09204068B2
公开(公告)日：2015-12-01
申请号：US13684986
申请日：2012-11-26
申请人： Koichi Kokubun
发明人： Koichi Kokubun
IPC分类号： H04N5/374 , H01L31/0232 , H01L27/146
CPC分类号： H04N5/374 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/14685 , H01L31/02327
摘要： According to one embodiment, a solid-state imaging device includes: a photodiode which is provided in a pixel region in which each pixel in a pixel forming region above a substrate is disposed; an interconnection layer which includes interconnections to connect the photodiode to peripheral circuits and an interlayer insulating film to insulate the interconnections from each other, and is provided above the photodiode; a color filter which is provided above the interconnection layer corresponding to the pixel region, and limits a wavelength of light incident on the photodiode. A light incident position correcting layer is provided between the color filter corresponding to the pixel disposed in at least the outer peripheral portion of the pixel forming region and the interconnection layer, and includes an anti-reflection film which is provided above the interconnection layer, and materials which have a negative refraction index and provided above the anti-reflection film.
摘要翻译：根据一个实施例，固态成像装置包括：设置在像素区域中的光电二极管，其中设置在基板上方的像素形成区域中的每个像素; 互连层，其包括将光电二极管连接到外围电路的互连和层间绝缘膜，以使互连彼此绝缘，并且设置在光电二极管的上方; 设置在与像素区域对应的互连层上方的滤光器，并限制入射到光电二极管上的光的波长。光入射位置校正层设置在与设置在像素形成区域的至少外周部分中的像素对应的滤色器和互连层之间，并且包括设置在互连层上方的防反射膜，以及具有负折射率并设置在抗反射膜上方的材料。

2. 发明授权

US09117717B2 Solid-state image pickup device having a multilayer interference filter including an upper laminated structure, a control structure and lower laminated structure 有权
标题翻译：具有包括上层叠结构，控制结构和下层叠结构的多层干涉滤光片的固态图像拾取装置
公开(公告)号：US09117717B2
公开(公告)日：2015-08-25
申请号：US13595298
申请日：2012-08-27
申请人： Koichi Kokubun
发明人： Koichi Kokubun
IPC分类号： H01J5/16 , H01L27/00 , H01L31/00 , H01L27/146 , H01L31/0216
CPC分类号： H01L27/14621 , H01L27/14685 , H01L31/02162
摘要： A solid-state image pickup device including a pixel array having a plurality of pixels, each of which includes a photoelectric converting unit and a multilayer interference filter. The multilayer interference filter includes an upper laminated structure, a lower laminated structure, and a control structure. Both the multilayer interference filter in a first pixel and the multilayer interference filter in a second pixel which is more distant from a center of the pixel array than the first pixel are disposed to selectively guide a light having a first color to the photoelectric converting unit. The control structure in the first pixel and the control structure in the second pixel have different configurations from each other in such a manner that a filter characteristic of the multilayer interference filter in the first pixel is equivalent to that of the multilayer interference filter in the second pixel.
摘要翻译：一种固态图像拾取装置，包括具有多个像素的像素阵列，每个像素包括光电转换单元和多层干涉滤光器。多层干涉滤波器包括上层叠结构，下层叠结构和控制结构。布置第一像素中的多层干涉滤光器和比第一像素更远离像素阵列的中心的第二像素中的多层干涉滤光器，以选择性地将具有第一颜色的光引导到光电转换单元。第一像素中的控制结构和第二像素中的控制结构具有彼此不同的配置，使得第一像素中的多层干涉滤光器的滤光器特性等同于第二像素中的多层干涉滤光器的滤波器特性像素。

3. 发明授权

US08823123B2 Solid-state image sensor 有权
标题翻译：固态图像传感器
公开(公告)号：US08823123B2
公开(公告)日：2014-09-02
申请号：US13601439
申请日：2012-08-31
申请人： Koichi Kokubun , Yusaku Konno
发明人： Koichi Kokubun , Yusaku Konno
IPC分类号： H01L31/0232 , H01L21/00 , H01L27/146 , H01L31/0216
CPC分类号： H01L27/146 , H01L27/14621 , H01L27/14685 , H01L31/02165 , H01L31/0232
摘要： According to one embodiment, there is provided a solid-state image sensor including a photoelectric conversion layer, and a multilayer interference filter. The multilayer interference filter is arranged to conduct light of a particular color, of incident light, selectively to the photoelectric conversion layer. The multilayer interference filter has a laminate structure in which a first layer having a first refraction index and a second layer having a second refraction index are repeatedly laminated, and a third layer which is in contact with a lower surface of the laminate structure and has a third refraction index. A lowermost layer of the laminate structure is the second layer. The third refraction index is not equal to the first refraction index and is higher than the second refraction index.
摘要翻译：根据一个实施例，提供了一种包括光电转换层和多层干涉滤光器的固态图像传感器。多层干涉滤光器被布置成将特定颜色的入射光的光选择性地导入光电转换层。多层干涉滤光器具有层叠结构，其中具有第一折射率的第一层和具有第二折射率的第二层被重复层压，以及与层压结构的下表面接触的第三层，第三折射指数。层压结构的最下层是第二层。第三折射率不等于第一折射率并且高于第二折射率。

4. 发明授权

US08735939B2 Solid state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08735939B2
公开(公告)日：2014-05-27
申请号：US13371712
申请日：2012-02-13
申请人： Koichi Kokubun
发明人： Koichi Kokubun
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/1461 , H01L27/14632
摘要： According to one embodiment, a solid state imaging device includes a photoelectric converting portion including a semiconductor region and a semiconductor film. The semiconductor region has a first region and a second region. The first region is of a second conductivity type. The first region is provided in a semiconductor substrate. The second region is of a first conductivity type. The first conductivity type is a different conductivity type from the second conductivity type. The second region is provided on the first region. The semiconductor film is of the second conductivity type. The semiconductor film is provided on the semiconductor region. An absorption coefficient of a material of the semiconductor film to a visible light is higher than an absorption coefficient of a material of the semiconductor substrate to the visible light. A thickness of the semiconductor film is smaller than a thickness of the semiconductor region.
摘要翻译：根据一个实施例，固态成像装置包括包括半导体区域和半导体膜的光电转换部分。半导体区域具有第一区域和第二区域。第一区域是第二导电类型。第一区域设置在半导体衬底中。第二区域是第一导电类型。第一导电类型是与第二导电类型不同的导电类型。第二区域设置在第一区域上。半导体膜是第二导电类型。半导体膜设置在半导体区域上。半导体膜的材料对可见光的吸收系数高于半导体衬底的材料对可见光的吸收系数。半导体膜的厚度小于半导体区域的厚度。

5. 发明申请

US20130240708A1 SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE 有权
标题翻译：固态图像拾取装置和制造固态图像拾取装置的方法
公开(公告)号：US20130240708A1
公开(公告)日：2013-09-19
申请号：US13595298
申请日：2012-08-27
申请人： Koichi KOKUBUN
发明人： Koichi KOKUBUN
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14621 , H01L27/14685 , H01L31/02162
摘要： A solid-state image pickup device including a pixel array having a plurality of pixels, each of which includes a photoelectric converting unit and a multilayer interference filter. The multilayer interference filter includes an upper laminated structure, a lower laminated structure, and a control structure. Both the multilayer interference filter in a first pixel and the multilayer interference filter in a second pixel which is more distant from a center of the pixel array than the first pixel are disposed to selectively guide a light having a first color to the photoelectric converting unit. The control structure in the first pixel and the control structure in the second pixel have different configurations from each other in such a manner that a filter characteristic of the multilayer interference filter in the first pixel is equivalent to that of the multilayer interference filter in the second pixel.
摘要翻译：一种固态图像拾取装置，包括具有多个像素的像素阵列，每个像素包括光电转换单元和多层干涉滤光器。多层干涉滤波器包括上层叠结构，下层叠结构和控制结构。布置第一像素中的多层干涉滤光器和比第一像素更远离像素阵列的中心的第二像素中的多层干涉滤光器，以选择性地将具有第一颜色的光引导到光电转换单元。第一像素中的控制结构和第二像素中的控制结构具有彼此不同的配置，使得第一像素中的多层干涉滤光器的滤光器特性等同于第二像素中的多层干涉滤光器的滤波器特性像素。

6. 发明申请

US20130134538A1 SOLID-STATE IMAGING DEVICE 审中-公开
标题翻译：固态成像装置
公开(公告)号：US20130134538A1
公开(公告)日：2013-05-30
申请号：US13680946
申请日：2012-11-19
申请人： Maki SATO , Koichi Kokubun
发明人： Maki SATO , Koichi Kokubun
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L31/0232 , H01L27/14621 , H01L27/1464 , H01L27/14645 , H01L27/14687 , H01L27/14689 , H01L31/18
摘要： According to an embodiment, an image sensor is provided for photoelectrically converting blue light, green light and red light for each pixel. A photoelectric conversion layer for red light is provided having a light absorption coefficient that is different than the light absorption coefficient of the photoelectric conversion layers for blue light and green light.
摘要翻译：根据一个实施例，提供一种图像传感器，用于对每个像素进行蓝光，绿光和红光的光电转换。提供了一种用于红光的光电转换层，其具有与用于蓝光和绿光的光电转换层的光吸收系数不同的光吸收系数。

7. 发明申请

US20110220976A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20110220976A1
公开(公告)日：2011-09-15
申请号：US12875809
申请日：2010-09-03
申请人： Yoshinori IIDA , Eishi Tsutsumi , Akira Fujimoto , Koji Asakawa , Hisayo Momose , Koichi Kokubun , Nobuyuki Momo
发明人： Yoshinori IIDA , Eishi Tsutsumi , Akira Fujimoto , Koji Asakawa , Hisayo Momose , Koichi Kokubun , Nobuyuki Momo
IPC分类号： H01L31/00
CPC分类号： H01L27/1464 , H01L27/1462 , H01L27/1463
摘要： Certain embodiments provide a solid-state imaging device including: a semiconductor substrate of a first conductivity type having a first face and a second face that is the opposite side from the first face; a plurality of pixels provided on the first face of the semiconductor substrate, each of the pixels including a semiconductor region of a second conductivity type that converts incident light into signal charges, and stores the signal charges; a readout circuit provided on the second face of the semiconductor substrate to read the signal charges stored in the pixels; an ultrafine metal structure placed at intervals on a face on a side of the semiconductor region, the light being incident on the face; and an insulating layer provided between the ultrafine metal structure and the semiconductor region.
摘要翻译：某些实施例提供了一种固态成像装置，包括：第一导电类型的半导体衬底，其具有第一面和与第一面相反一侧的第二面; 设置在半导体衬底的第一面上的多个像素，每个像素包括将入射光转换为信号电荷的第二导电类型的半导体区域，并存储信号电荷; 读出电路，设置在半导体衬底的第二面上，以读取存储在像素中的信号电荷; 在半导体区域的一侧的表面上间隔放置的超细金属结构，该光入射到该面上; 以及设置在超细金属结构和半导体区域之间的绝缘层。

8. 发明授权

US06551882B2 Semiconductor device manufacturing method permitting suppression of leak current through the PN junction 失效
标题翻译：半导体器件制造方法允许抑制通过PN结的漏电流
公开(公告)号：US06551882B2
公开(公告)日：2003-04-22
申请号：US09817275
申请日：2001-03-27
申请人： Akiko Nomachi , Hiroshi Takato , Tadaomi Sakurai , Hiroshi Naruse , Koichi Kokubun , Hideaki Harakawa
发明人： Akiko Nomachi , Hiroshi Takato , Tadaomi Sakurai , Hiroshi Naruse , Koichi Kokubun , Hideaki Harakawa
IPC分类号： H01L218234
CPC分类号： H01L21/823481
摘要： In a MOS transistor of an LDD structure, a cobalt silicide film is formed in a region where adjacent gates are formed widely apart from each other, but is not formed in a region where adjacent gates are formed close to each other. The particular construction permits suppressing the leak current through the PN junction that is generated under the influence of the metal silicide compound in the region where adjacent gates are formed close to each other, and also permits ensuring the signal processing at a high speed in the region where adjacent gates are formed widely apart from each other.
摘要翻译：在LDD结构的MOS晶体管中，在相邻栅极彼此分开形成的区域中形成钴硅化物膜，但不形成在相邻栅极彼此靠近形成的区域中。该特定结构允许抑制在相邻栅极彼此形成的区域中在金属硅化物化合物的影响下产生的PN结的漏电流，并且还允许确保该区域中的高速信号处理其中相邻门彼此分开形成。

9. 发明授权

US06339237B1 Semiconductor device having a memory cell region and peripheral circuit region and method of manufacturing the same 失效
标题翻译：具有存储单元区域和外围电路区域的半导体器件及其制造方法
公开(公告)号：US06339237B1
公开(公告)日：2002-01-15
申请号：US09467078
申请日：1999-12-20
申请人： Akiko Nomachi , Hiroshi Takato , Tadaomi Sakurai , Hiroshi Naruse , Koichi Kokubun , Hideaki Harakawa
发明人： Akiko Nomachi , Hiroshi Takato , Tadaomi Sakurai , Hiroshi Naruse , Koichi Kokubun , Hideaki Harakawa
IPC分类号： H01L2980
CPC分类号： H01L21/823481
摘要： In a MOS transistor of an LDD structure, a cobalt silicide film is formed in a region where adjacent gates are formed widely apart from each other, but is not formed in a region where adjacent gates are formed close to each other. The particular construction permits suppressing the leak current through the PN junction that is generated under the influence of the metal silicide compound in the region where adjacent gates are formed close to each other, and also permits ensuring the signal processing at a high speed in the region where adjacent gates are formed widely apart from each other.
摘要翻译：在LDD结构的MOS晶体管中，在相邻栅极彼此分开形成的区域中形成钴硅化物膜，但不形成在相邻栅极彼此靠近形成的区域中。该特定结构允许抑制在相邻栅极彼此形成的区域中在金属硅化物化合物的影响下产生的PN结的泄漏电流，并且还允许确保该区域中的高速信号处理其中相邻门彼此分开形成。

10. 发明申请

US20130113964A1 SOLID STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20130113964A1
公开(公告)日：2013-05-09
申请号：US13597686
申请日：2012-08-29
申请人： Hiroki SASAKI , Koichi KOKUBUN
发明人： Hiroki SASAKI , Koichi KOKUBUN
IPC分类号： H04N9/04 , H01L31/18
CPC分类号： H01L27/14629 , H01L27/1463 , H01L27/1464
摘要： According to one embodiment, a pixel detecting light having the longest wavelength in a picture element includes a protective film which is disposed on a photodiode at a surface side facing a light incident surface of a semiconductor substrate and a first diffraction grating portion which is disposed on the protective film and where columnar holes penetrating in a thickness direction are two-dimensionally arrayed. Diameter and array period of the holes are selected so that the first diffraction grating portion reflects light transmitting through a filter disposed on the pixel.
摘要翻译：根据一个实施例，在像素中具有最长波长的像素检测光包括保护膜，该保护膜设置在面对半导体衬底的光入射表面的表面侧的光电二极管和设置在半导体衬底上的第一衍射光栅部分保护膜和在厚度方向上贯穿的柱状孔二维排列。选择孔的直径和阵列周期，使得第一衍射光栅部分反射通过设置在像素上的滤光器透射的光。

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