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    • 2. 发明申请
    • MOTION VECTOR DETECTION BY STEPWISE SEARCH
    • 运动矢量检测通过STEPWISE搜索
    • US20090268822A1
    • 2009-10-29
    • US12273717
    • 2008-11-19
    • Kengo TERADAKouji NakajimaKeisuke Kondou
    • Kengo TERADAKouji NakajimaKeisuke Kondou
    • H04N11/02G06K9/36H04N7/12
    • H04N19/533G06T7/238G06T2207/10016H04N19/61
    • A moving image encoding apparatus includes a motion vector detecting unit for executing from a wide and coarse search to a narrow and fine search in a plurality of steps and in a stepwise manner to detect a motion vector of each block in an input image. The motion vector detecting unit includes a block combining unit for generating a combination block, depending on a result of detection in a search step, a search use pixel extracting unit for extracting a search use pixel to be used in a next search step, from the combination block, and a second search combination block searching unit for performing the next search step with respect to the combination block using the search use pixel, and setting a detected motion vector of the combination block as the motion vector of each block of the combination block.
    • 运动图像编码装置包括:运动矢量检测单元,用于从多个步骤中以逐步的方式从广泛粗略搜索到窄和精细搜索,以检测输入图像中每个块的运动矢量。 运动矢量检测单元包括:块组合单元,用于根据搜索步骤中的检测结果生成组合块;搜索使用像素提取单元,用于从下一个搜索步骤中提取要使用的搜索使用像素 组合块和第二搜索组合块搜索单元,用于使用搜索使用像素执行关于组合块的下一个搜索步骤,并且将检测到的组合块的运动矢量设置为组合块的每个块的运动矢量 。
    • 7. 发明授权
    • Power semiconductor device including gate lead-out electrode
    • 功率半导体器件包括栅极引出电极
    • US08183645B2
    • 2012-05-22
    • US12588392
    • 2009-10-14
    • Kouji Nakajima
    • Kouji Nakajima
    • H01L21/70
    • H01L29/7802H01L21/823475H01L29/1095H01L29/4238H01L29/4925H01L29/66712H01L29/7811H01L29/7813
    • Flexibility for the design of the pattern layout of the gate lead-out electrode and the source electrode is enhanced without increasing the chip thickness of the semiconductor device. A semiconductor device includes a cell region where plural transistor cells are arranged and a gate finger region different from a region where the cell region is formed. In the cell region, a gate electrode formed of a polysilicon (first conductive material) is formed. A polysilicon layer formed indivisibly with the gate electrode is formed in the gate finger region. An adhesion metal layer and a wiring metal layer are formed above the polysilicon layer by a lift-off method. The gate lead-out electrode is formed of a laminate structure including the polysilicon layer, the adhesion metal layer, and the wiring metal layer. A single layer of interlayer insulation film covering them is formed, on which a source electrode is formed.
    • 在不增加半导体器件的芯片厚度的情况下,增强了栅极引出电极和源电极的图案布局设计的灵活性。 半导体器件包括布置多个晶体管单元的单元区域和与形成单元区域的区域不同的栅极指状区域。 在单元区域中,形成由多晶硅(第一导电材料)形成的栅电极。 在栅指区域中形成与栅电极不可分割地形成的多晶硅层。 通过剥离法在多晶硅层的上方形成粘附金属层和布线金属层。 栅极引出电极由包括多晶硅层,粘合金属层和布线金属层的层叠结构形成。 形成覆盖它们的单层层间绝缘膜,在其上形成源电极。