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1. 发明授权

US07420261B2 Bulk nitride mono-crystal including substrate for epitaxy 有权
标题翻译：包括用于外延的衬底的块状氮化物单晶
公开(公告)号：US07420261B2
公开(公告)日：2008-09-02
申请号：US11589058
申请日：2006-10-30
申请人： Robert Dwiliński , Roman Doradziński , Jerzy Garczynski , Leszek P. Sierzputowski , Yasuo Kanbara
发明人： Robert Dwiliński , Roman Doradziński , Jerzy Garczynski , Leszek P. Sierzputowski , Yasuo Kanbara
IPC分类号： H01L29/20 , H01L31/0304 , H01L29/00 , H01L29/06 , H01L29/12
CPC分类号： C30B29/403 , C30B7/00 , C30B7/10 , C30B29/40 , C30B29/406 , H01S5/0281 , H01S5/32341
摘要： The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium nitride has a surface area greater than 100 mm2, it is more than 1,0 μm thick and its C-plane surface dislocation density is less than 106/cm2, while its volume is sufficient to produce at least one further-processable non-polar A-plane or M-plane plate having a surface area at least 100 mm2. More generally, the present invention covers a bulk nitride mono-crystal which is characterized in that it is a mono-crystal of gallium-containing nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium-containing nitride has a surface area greater than 100 mm2, it is more 1,0-μm thick and its surface dislocation density is less than 106/cm2. Mono-crystals according to the present invention are suitable for epitaxial growth of nitride semiconductor layers. Due to their good crystalline quality they are suitable for use in opto-electronics for manufacturing opto-electronic semiconductor devices based on nitrides, in particular for manufacturing semiconductor laser diodes and laser devices. The a.m. bulk mono-crystals of gallium-containing nitride are crystallized on seed crystals. Various seed crystals may be used. The bulk mono-crystals of gallium-containing nitride are crystallized by a method involving dissolution of a gallium-containing feedstock in a supercritical solvent and crystallization of a gallium nitride on a surface of seed crystal, at temperature higher and/or pressure lower than in the dissolution process.
摘要翻译：本发明涉及用于外延的衬底，特别是用于制备氮化物半导体层。本发明涉及一种块状氮化物单晶，其特征在于它是氮化镓的单晶，其在垂直于氮化镓的六方晶格的c轴的平面中的横截面具有大于100mm的表面积， 2，其厚度大于1.0μm，其C面表面位错密度小于10×6 / cm 2，而其体积为足以产生具有至少100mm 2以上的表面积的至少一个可进一步加工的非极性A平面或M平面板。更一般来说，本发明涉及一种块状氮化物单晶，其特征在于其是含镓氮化物的单晶，其在与含镓氮化物的六方晶格的c轴垂直的平面中的横截面具有大于100mm 2的表面积，更多的是1.0μm厚，并且其表面位错密度小于10 -6 / cm 2， / SUP>。根据本发明的单晶适用于氮化物半导体层的外延生长。由于它们具有良好的晶体质量，它们适用于制造基于氮化物的光电半导体器件的光电子器件，特别是用于制造半导体激光二极管和激光器件。含镓氮化物的大量单体晶体在晶种上结晶。可以使用各种晶种。含镓氮化物的体积单晶通过包括在超临界溶剂中溶解含镓原料并在氮化镓在晶种表面上结晶的方法结晶，温度高于和/或低于溶解过程。

2. 发明授权

US07315559B2 Nitride semiconductor laser device and a method for improving its performance 失效
标题翻译：氮化物半导体激光器件及其性能的改进方法
公开(公告)号：US07315559B2
公开(公告)日：2008-01-01
申请号：US10519501
申请日：2003-06-26
申请人： Robert Dwilinski , Roman Doradziński , Jerzy Garczyński , Leszek P. Sierzputowski , Yasuo Kanbara
发明人： Robert Dwilinski , Roman Doradziński , Jerzy Garczyński , Leszek P. Sierzputowski , Yasuo Kanbara
IPC分类号： H01S5/00
CPC分类号： C30B29/403 , C30B7/005 , C30B9/00 , C30B29/406 , H01S5/0281 , H01S5/164 , H01S5/32341
摘要： The present invention relates to a nitride semiconductor laser device provided with a window layer on a light-emitting end face of the resonator which comprises an active layer of nitride semiconductor between the n-type nitride semiconductor layers and the p-type nitride semiconductor layers, in which at least the radiation-emitting end face of said resonator is covered by said window layer comprising monocrystalline nitride of general formula AlxGa1−x−yINyN, where 0≦x+y≦1, 0≦x≦1 and 0≦y
摘要翻译：本发明涉及在谐振器的发光端面上设置有窗口层的氮化物半导体激光器件，其包括n型氮化物半导体层和p型氮化物半导体层之间的氮化物半导体的有源层，其中所述谐振器的至少辐射发射端面被所述窗口层覆盖，所述窗层包括通式为Al x Ga 1-xy IN y的单晶氮化物 N，其中0 <= x + y <= 1,0 <= x <= 1和0 <= y <1，具有比有源层更宽的能隙并且在低温下形成以免损坏所述活性层。这种窗口层的形成显着提高了根据本发明的氮化物激光器件的性能。

3. 发明授权

US08754449B2 High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereof 有权
标题翻译：由第XIII族元素氮化物层构成的高电子迁移率晶体管（HEMT）及其制造方法
公开(公告)号：US08754449B2
公开(公告)日：2014-06-17
申请号：US11629125
申请日：2005-06-10
申请人： Robert Dwilinski , Roman Doradzinski , Jerzy Garczynski , Leszek P. Sierzputowski , Yasuo Kanbara
发明人： Robert Dwilinski , Roman Doradzinski , Jerzy Garczynski , Leszek P. Sierzputowski , Yasuo Kanbara
IPC分类号： H01L29/66 , H01L29/20
CPC分类号： H01L29/66462 , H01L29/2003
摘要： The invention relates to a new High Electron Mobility Transistor (HEMT), made essentially of layers of Group XIII element(s) nitride(s). Contrary to currently available transistors of this type, the transistor according to the invention is produced on a homosubstrate made of gallium-containing nitride, has no nucleation layer and its buffer layer is remarkably thinner than in known HEMTs.Preferably, at least the buffer layer, being a part of the transistor according to the present invention, is produced by epitaxial methods and the direction of growth of said layer in an epitaxial process is essentially perpendicular to the direction of growth of the substrate. The invention relates also to a method of manufacturing of High Electron Mobility Transistor (HEMT).
摘要翻译：本发明涉及一种基本由第XIII族氮化物元素层制成的新的高电子迁移率晶体管（HEMT）。与目前这种类型的晶体管相反，根据本发明的晶体管是由含镓氮化物制成的同质衬底上生产的，没有成核层，其缓冲层比已知的HEMT薄得多。优选地，作为根据本发明的晶体管的一部分的至少缓冲层是通过外延方法制造的，并且外延工艺中所述层的生长方向基本上垂直于衬底的生长方向。本发明还涉及高电子迁移率晶体管（HEMT）的制造方法。

4. 发明授权

US07364619B2 Process for obtaining of bulk monocrystalline gallium-containing nitride 有权
标题翻译：用于获得大块单晶含镓氮化物的方法
公开(公告)号：US07364619B2
公开(公告)日：2008-04-29
申请号：US10519141
申请日：2003-04-17
申请人： Robert Dwilinski , Roman Doradzinski , Jerzy Garczynski , Leszek P. Sierzputowski , Yasuo Kanbara
发明人： Robert Dwilinski , Roman Doradzinski , Jerzy Garczynski , Leszek P. Sierzputowski , Yasuo Kanbara
IPC分类号： C30B11/04
CPC分类号： C30B29/403 , C30B7/00 , C30B7/005 , C30B29/406
摘要： The invention relates to new improvements in a process for crystal growth in the environment of supercritical ammonia-containing solution, which are based on use of specific azide mineralizers and result in the improved bulk Group XIII element nitride monocrystals, in particular balk monocrystalline gallium-containing nitride, intended mainly for variety of nitride-based semiconductor products such as various opto-electronic devices. The invention further relates to a mineralizer used for supercritical ammonia-containing solution which comprises at least one compound selected from the group consisting of LiN3, NaN3, KN3, and CsN3.
摘要翻译：本发明涉及在超临界含氨溶液的环境中的晶体生长过程中的新改进，其基于使用特定的叠氮化物矿化剂，并且导致改进的体积组XIII族氮化物单晶，特别是碱性单晶含镓氮化物，主要用于各种氮化物基半导体产品，如各种光电器件。本发明还涉及用于超临界含氨溶液的矿化剂，其包含至少一种选自LiN 3 N 3，Na 3 N 3，N 3 N 3， 3 和CsN 3 3。

5. 发明授权

US07132730B2 Bulk nitride mono-crystal including substrate for epitaxy 有权
标题翻译：包含用于外延的衬底的块状氮化物单晶
公开(公告)号：US07132730B2
公开(公告)日：2006-11-07
申请号：US10493747
申请日：2002-10-25
申请人： Robert Dwiliński , Roman Doradziński , Jerzy Garczyński , Leszek P. Sierzputowski , Yasuo Kanbara
发明人： Robert Dwiliński , Roman Doradziński , Jerzy Garczyński , Leszek P. Sierzputowski , Yasuo Kanbara
IPC分类号： H01L29/20 , H01L31/0304 , H01L29/00 , H01L29/06 , H01L29/12
CPC分类号： C30B29/403 , C30B7/00 , C30B7/10 , C30B29/40 , C30B29/406 , H01S5/0281 , H01S5/32341
摘要： The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium nitride has a surface area greater than 100 mm2, it is more than 1.0 μm thick and its C-plane surface dislocation density is less than 106/cm2, while its volume is sufficient to produce at least one further-processable non-polar A-plane or M-plane plate having a surface area at least 100 mm2. More generally, the present invention covers a bulk nitride mono-crystal which is characterized in that it is a mono-crystal of gallium-containing nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium-containing nitride has a surface area greater than 100 mm2, it is more 1.0 μm thick and its surface dislocation density is less than 106/cm2. Mono-crystals according to the present invention are suitable for epitaxial growth of nitride semiconductor layers. Due to their good crystalline quality they are suitable for use in opto-electronics for manufacturing opto-electronic semiconductor devices based on nitrides, in particular for manufacturing semiconductor laser diodes and laser devices. The a.m bulk mono-crystals of gallium-containing nitride are crystallized on seed crystals. Various seed crystals may be used. The bulk mono-crystals of gallium-containing nitride are crystallized by a method involving dissolution of a gallium-containing feedstock in a supercritical solvent and crystallization of a gallium nitride on a surface of seed crystal, at temperature higher and/or pressure lower than in the dissolution process.
摘要翻译：本发明涉及用于外延的衬底，特别是用于制备氮化物半导体层。本发明涉及一种块状氮化物单晶，其特征在于它是氮化镓的单晶，其在垂直于氮化镓的六方晶格的c轴的平面中的横截面具有大于100mm的表面积， 2，厚度大于1.0μm，其C面表面位错密度小于10/6/2，而其体积足以产生表面积至少为100mm 2以上的至少一个可再加工的非极性A平面或M平面板。更一般来说，本发明涉及一种块状氮化物单晶，其特征在于其是含镓氮化物的单晶，其在与含镓氮化物的六方晶格的c轴垂直的平面中的横截面具有大于100mm 2的表面积，更厚1.0μm，其表面位错密度小于10/6 / 。根据本发明的单晶适用于氮化物半导体层的外延生长。由于它们具有良好的晶体质量，它们适用于制造基于氮化物的光电半导体器件的光电子器件，特别是用于制造半导体激光二极管和激光器件。含镓氮化物的大体积单晶在晶种上结晶。可以使用各种晶种。含镓氮化物的体积单晶通过包括在超临界溶剂中溶解含镓原料并在氮化镓在晶种表面上结晶的方法结晶，温度高于和/或低于溶解过程。

6. 发明授权

US07335262B2 Apparatus for obtaining a bulk single crystal using supercritical ammonia 有权
标题翻译：使用超临界氨获得大块单晶的装置
公开(公告)号：US07335262B2
公开(公告)日：2008-02-26
申请号：US10514639
申请日：2002-12-11
申请人： Robert Dwilinski , Roman Doradzinski , Jerzy Garczynski , Leszek P. Sierzputowski , Yasuo Kanbara
发明人： Robert Dwilinski , Roman Doradzinski , Jerzy Garczynski , Leszek P. Sierzputowski , Yasuo Kanbara
IPC分类号： C30B35/00
CPC分类号： C30B7/10 , C30B7/00 , C30B7/08 , C30B29/406 , Y10T117/10 , Y10T117/102 , Y10T117/1024
摘要： An apparatus includes an autoclave for preparing a supercritical solvent, a convection controller for establishing a convection flow, a dissolution zone where a feedstock is located above the convection controller and a crystallization zone where a seed is located below the convection controller are formed. A convection flow rate of the supercritical solution between the dissolution zone and the crystallization zone is determined by the degree of opening of the convection controller and the temperature difference between the dissolution zone and the crystallization zone. Accordingly, the supercritical solution, in which the nitride has a negative temperature coefficient of solubility, is supplied from the dissolution zone to the crystallization zone in which a seed is located through the convection controller so that nitride crystal is selectively grown on the seed by maintaining supersaturation of the supercritical solution with respect to the seed at a raised temperature.
摘要翻译：一种装置包括用于制备超临界溶剂的高压釜，用于建立对流的对流控制器，其中原料位于对流控制器上方的溶解区以及种子位于对流控制器下方的结晶区。溶解区和结晶区之间的超临界溶液的对流流速由对流控制器的开度和溶解区与结晶区之间的温差确定。因此，其中氮化物具有负温度溶解度系数的超临界溶液从溶解区提供给种子通过对流控制器所位于的结晶区域，从而氮化物晶体通过维持选择性地生长在种子上在升高的温度下超临界溶液相对于种子的过饱和。

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