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1. 发明申请

US20180272351A1 Method for Conducting Reactions Involving Biological Molecules in Plugs in a Microfluidic System 审中-公开
公开(公告)号：US20180272351A1
公开(公告)日：2018-09-27
申请号：US15926985
申请日：2018-03-20
申请人： The University of Chicago
发明人： Rustem F. Ismagilov , Joshua David Tice , Cory John Gerdts , Bo Zheng
IPC分类号： B01L3/00 , B01F5/06 , C12N9/36
CPC分类号： B01L3/502784 , B01D9/0072 , B01D2009/0086 , B01F5/0646 , B01F5/0647 , B01F13/0071 , B01J14/00 , B01J19/0046 , B01J19/0093 , B01J2219/00286 , B01J2219/00576 , B01J2219/00585 , B01J2219/00599 , B01J2219/00722 , B01J2219/00725 , B01J2219/00736 , B01J2219/00756 , B01J2219/00783 , B01J2219/00837 , B01J2219/0086 , B01J2219/00869 , B01J2219/00889 , B01J2219/00891 , B01J2219/00894 , B01J2219/00903 , B01J2219/00975 , B01J2219/00977 , B01L3/502715 , B01L3/50273 , B01L2200/0673 , B01L2200/12 , B01L2300/0867 , B01L2400/0487 , B82Y30/00 , C07K14/43 , C12N9/2462 , C12Q1/6806 , C12Y302/01017 , C30B7/14 , C30B29/54 , C30B29/58 , G01N1/28 , G01N35/08 , Y10T117/10 , Y10T137/0318 , Y10T436/117497 , Y10T436/143333 , Y10T436/25
摘要： The present invention provides microfabricated substrates and methods of conducting reactions within these substrates. The reactions occur in plugs transported in the flow of a carrier-fluid.

2. 发明申请

US20180190677A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION SYSTEM 审中-公开
公开(公告)号：US20180190677A1
公开(公告)日：2018-07-05
申请号：US15897318
申请日：2018-02-15
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Atsuo ISOBE , Shunpei YAMAZAKI , Koji DAIRIKI , Hiroshi SHIBATA , Chiho KOKUBO , Tatsuya ARAO , Masahiko HAYAKAWA , Hidekazu MIYAIRI , Akihisa SHIMOMURA , Koichiro TANAKA , Mai AKIBA
IPC分类号： H01L27/12 , B23K26/073 , H01L21/02 , H01L21/20 , H01L21/3213 , H01L21/84 , H01L29/66 , H01L29/786
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

3. 发明授权

US09926642B2 Method of manufacturing a pressure vessel for growing single crystals 有权
公开(公告)号：US09926642B2
公开(公告)日：2018-03-27
申请号：US14657455
申请日：2015-03-13
申请人： FURUYA METAL CO., LTD. , MITSUBISHI CHEMICAL CORPORATION , THE JAPAN STEEL WORKS, LTD.
发明人： Yuji Sasagawa , Osamu Wakao , Yoshihiko Yamamura , Shigeharu Akatsuka , Keiichiro Matsushita
IPC分类号： C30B7/10 , C30B35/00 , B01J3/04 , C23C30/00
CPC分类号： C30B7/10 , B01J3/04 , C23C30/00 , C30B35/002 , Y10T29/49826 , Y10T117/10 , Y10T117/1096
摘要： An object of the present invention is to manufacture single crystals of high quality on an industrial production scale by preventing impurities from being mixed in single crystals when the single crystals are produced by the solvothermal method.A pressure vessel body 1, in which a supercritical state is maintained, is made of heat resistant alloy, a portion of the pressure vessel body is open, a corrosion-resistant mechanical lining 5 is provided on an inner face of the pressure vessel and on an entire outer circumferential edge of the opening, and the opening is sealed by an airtight mating face formed out of a corrosion-resistant mechanical lining, which is formed on the outer circumferential edge of the opening, and by an airtight mating face of the corrosion-resistant mechanical lining cover 6 on an inner face of the cover 3 through a corrosion-resistant gasket member. Since the pressure vessel body and the inner face of the cover are covered with the corrosion-resistant mechanical lining, corrosion can be prevented. The corrosion-resistant mechanical lining ensures the sealing property on the airtight mating face between the pressure vessel body and the cover and further effectively prevents corrosion in the airtight sealing portion and it becomes possible to repeatedly open and close the airtight sealing portion.

4. 发明授权

US09797066B2 Susceptor and method for manufacturing epitaxial wafer 有权
公开(公告)号：US09797066B2
公开(公告)日：2017-10-24
申请号：US13824731
申请日：2011-11-10
申请人： Masato Ohnishi
发明人： Masato Ohnishi
IPC分类号： C30B25/12 , C23C16/458 , C23C16/46 , H01L21/687
CPC分类号： C30B25/12 , C23C16/4581 , C23C16/46 , H01L21/68735 , Y10T117/00 , Y10T117/10
摘要： A susceptor is disclosed that can increase a heat capacity of a susceptor outer peripheral portion by enlarging the thickness of the susceptor and equalize thermal conditions for an outer peripheral portion and the inner peripheral portion of a wafer and a method for manufacturing an epitaxial wafer that uses this susceptor to perform vapor-phase epitaxy of an epitaxial layer. Back surface depositions have a close relationship with heat transfer that occurs between a wafer and a susceptor, i.e., a wafer outer peripheral portion has a higher temperature than a wafer inner peripheral portion since the wafer is in contact with or close to the susceptor at the wafer outer peripheral portion and hence the back surface depositions are apt to be generated. This is solved by equalizing thermal conditions for the wafer outer peripheral portion and the inner peripheral portion of the wafer back surface.

5. 发明授权

US09790619B2 Method of producing high quality silicon carbide crystal in a seeded growth system 有权
公开(公告)号：US09790619B2
公开(公告)日：2017-10-17
申请号：US13181167
申请日：2011-07-12
申请人： Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov
发明人： Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov
IPC分类号： C30B23/02 , C30B29/36 , C30B23/00 , C30B33/00 , H01L21/324
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025 , C30B33/00 , H01L21/324 , Y10T117/10 , Y10T117/1004 , Y10T117/1016 , Y10T428/21 , Y10T428/31
摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.

6. 发明申请

US20160281260A1 SYSTEMS FOR CONTINUOUS GROWING OF INGOTS 审中-公开
标题翻译：连续生长的系统
公开(公告)号：US20160281260A1
公开(公告)日：2016-09-29
申请号：US15008640
申请日：2016-01-28
申请人： SunEdison, Inc.
发明人： David L. Bender
IPC分类号： C30B15/12 , C30B15/02 , C30B29/06 , C30B15/22 , C30B15/04 , C30B15/00 , C30B15/14
CPC分类号： C30B15/12 , C30B15/002 , C30B15/02 , C30B15/04 , C30B15/10 , C30B15/14 , C30B15/22 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032 , Y10T117/1052 , Y10T117/1056 , Y10T117/1068 , Y10T117/1072 , Y10T117/108 , Y10T117/1088 , Y10T117/1092
摘要： An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.
摘要翻译：基于用于连续生长单晶锭的切克劳斯基方法的改进的系统包括低纵横比，大直径和基本平坦的坩埚，包括围绕晶体的可选堰。低长宽比坩埚基本上消除了对流，并降低了成品单晶硅锭中的氧含量。单独的水平控制的硅预熔化室向生长坩埚提供连续的熔融硅源，有利地消除了在晶体拉制过程中垂直行进和坩埚升高系统的需要。坩埚下面的多个加热器在熔体上建立相应的热区。加热器的热输出被单独控制，以提供跨熔体和晶体/熔融界面的最佳热分布，以改善晶体生长。提供多个晶体拉伸室用于连续处理和高通量。

7. 发明授权

US09329107B2 Device for pressure-driven plug transport comprising microchannel with traps 有权
标题翻译：用于压力驱动塞子输送的装置，包括具有捕集阱的微通道
公开(公告)号：US09329107B2
公开(公告)日：2016-05-03
申请号：US13024165
申请日：2011-02-09
申请人： Rustem F Ismagilov , Joshua David Tice , Cory John Gerdts , Bo Zheng
发明人： Rustem F Ismagilov , Joshua David Tice , Cory John Gerdts , Bo Zheng
IPC分类号： G01N21/00 , G01N1/28 , B01L3/00 , B01F5/06 , B01F13/00 , B01J19/00 , B82Y30/00 , G01N35/08
CPC分类号： B01L3/502784 , B01D9/0072 , B01D2009/0086 , B01F5/0646 , B01F5/0647 , B01F13/0071 , B01J14/00 , B01J19/0046 , B01J19/0093 , B01J2219/00286 , B01J2219/00576 , B01J2219/00585 , B01J2219/00599 , B01J2219/00722 , B01J2219/00725 , B01J2219/00736 , B01J2219/00756 , B01J2219/00783 , B01J2219/00837 , B01J2219/0086 , B01J2219/00869 , B01J2219/00889 , B01J2219/00891 , B01J2219/00894 , B01J2219/00903 , B01J2219/00975 , B01J2219/00977 , B01L3/502715 , B01L3/50273 , B01L2200/0673 , B01L2200/12 , B01L2300/0867 , B01L2400/0487 , B82Y30/00 , C07K14/43 , C12N9/2462 , C12Q1/6806 , C12Y302/01017 , C30B7/14 , C30B29/54 , C30B29/58 , G01N1/28 , G01N35/08 , Y10T117/10 , Y10T137/0318 , Y10T436/117497 , Y10T436/143333 , Y10T436/25
摘要： The present invention provides microfabricated substrates and methods of conducting reactions within these substrates. The reactions occur in plugs transported in the flow of a carrier-fluid.
摘要翻译：本发明提供微制造的底物和在这些底物内进行反应的方法。反应发生在在载体流体流中输送的塞子中。

8. 发明授权

US09238875B2 Multilayer structure for a diamond growth and a method of providing the same 有权
标题翻译：用于钻石生长的多层结构及其提供方法
公开(公告)号：US09238875B2
公开(公告)日：2016-01-19
申请号：US12929567
申请日：2011-02-01
申请人： Hexiang Zhu , Karl Pearson , Joo Ro Kim
发明人： Hexiang Zhu , Karl Pearson , Joo Ro Kim
IPC分类号： C30B29/04 , B01J3/06
CPC分类号： C30B29/04 , B01J3/062 , B01J2203/061 , B01J2203/062 , B01J2203/0655 , B01J2203/068 , Y10T117/10
摘要： A multi-layer structure in a reaction cell for a diamond growth is provided. The multi-layer structure includes: a diamond seed; a first metal catalyst layer provided on the diamond seed, the first metal catalyst layer containing a first concentration of carbon; a second metal catalyst layer provided on the first metal layer, the second metal catalyst layer containing a second concentration of carbon that is higher than the first concentration; and a carbon source layer provided on the second metal layer.
摘要翻译：提供了用于金刚石生长的反应池中的多层结构。多层结构包括：金刚石种子; 设置在所述金刚石晶种上的第一金属催化剂层，所述第一金属催化剂层含有第一浓度的碳; 设置在所述第一金属层上的第二金属催化剂层，所述第二金属催化剂层含有高于所述第一浓度的第二浓度的碳; 以及设置在第二金属层上的碳源层。

9. 发明授权

US09222197B2 Shield member and apparatus for growing single crystal equipped with the same 有权
标题翻译：用于生长配备相同的单晶的屏蔽构件和装置
公开(公告)号：US09222197B2
公开(公告)日：2015-12-29
申请号：US13580877
申请日：2011-01-12
申请人： Akihiro Matsuse
发明人： Akihiro Matsuse
IPC分类号： C30B23/06 , C30B29/36 , C30B23/00
CPC分类号： C30B23/06 , C30B23/002 , C30B23/005 , C30B29/36 , Y10T117/10
摘要： Provided is a shield member and an apparatus for growing a single crystal equipped with the shield member. Such a shield member includes: a vessel for growing the single crystal; a raw material storage part positioned at a lower portion of the vessel for growing the single crystal; a substrate supporting part, positioned above the raw material storage part to support the substrate; and a heating apparatus positioned at a an outer periphery of the vessel for growing the single crystal, thereby sublimating the raw material from the raw material storage part to grow the single crystal of the raw material onto the substrate, in which a plurality of permeation holes through which the raw material gas passes is formed. The shield member is configured such that the heat capacity thereof increases from the center to the outer periphery.
摘要翻译：提供一种屏蔽部件和用于生长装备有屏蔽部件的单晶的设备。这种屏蔽构件包括：用于生长单晶的容器; 位于容器下部的原料储存部，用于生长单晶; 基板支撑部，位于原料收纳部的上方，支撑基板; 以及位于容器的外周的加热装置，用于使单晶生长，从而使原料储存部分的原料升华，将原料的单晶生长到基板上，其中多个渗透孔通过该原料气体通过。屏蔽构件被构造成使得其热容量从中心向外周增加。

10. 发明授权

US09181633B2 Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal wafer 有权
标题翻译： III-V晶片加热和退火III-V半导体单晶晶片的装置和工艺
公开(公告)号：US09181633B2
公开(公告)日：2015-11-10
申请号：US12251754
申请日：2008-10-15
申请人： Manfred Jurisch , Stefan Eichler , Thomas Bünger , Berndt Weinert , Frank Börner
发明人： Manfred Jurisch , Stefan Eichler , Thomas Bünger , Berndt Weinert , Frank Börner
IPC分类号： H01L21/8252 , C30B33/02 , C30B11/00 , H01L21/02 , C30B29/40 , C30B29/42 , C30B35/00
CPC分类号： C30B33/02 , C30B11/00 , C30B29/40 , C30B29/42 , C30B35/00 , H01L21/02395 , H01L21/3245 , H01L21/67346 , H01L2924/10329 , Y10T117/10 , Y10T428/21 , Y10T428/24479 , Y10T428/24612 , Y10T428/31
摘要： A device for heat treating (annealing) a III-V semiconductor wafer comprises at least one wafer support unit which is dimensioned such that a cover provided above the wafer surface is either spaced without any distance or with a distance of maximally about 2 mm to the wafer surface. A process for heat treating III-V semiconductor wafers having diameters larger than 100 mm and a dislocation density below 1×104 cm−2 is carried out in the device of the invention. SI GaAs wafers produced have an at least 25% increased characteristic fracture strength (Weibull distribution), an improved radial macroscopic and mesoscopic homogeneity and an improved quality of the mechano-chemically polished surface. The characteristic fracture strength is higher than 1900 MPa.
摘要翻译：用于热处理（退火）III-V半导体晶片的装置包括至少一个晶片支撑单元，该晶片支撑单元的尺寸被设计成使得设置在晶片表面上方的盖子间隔开距离或距离最远不超过约2mm的距离晶圆表面。在本发明的装置中进行热处理直径大于100mm，位错密度低于1×104cm-2的III-V半导体晶片的方法。生产的SI GaAs晶片具有至少25％的特征断裂强度（威布尔分布），改进的径向宏观和介观均匀性以及机械化学抛光表面的改进质量。特征断裂强度高于1900 MPa。

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