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1. 发明申请

US20080026544A1 Method for improving the quality of an SiC crystal and an SiC semiconductor device 有权
标题翻译：提高SiC晶体和SiC半导体器件的质量的方法
公开(公告)号：US20080026544A1
公开(公告)日：2008-01-31
申请号：US11595232
申请日：2006-11-10
申请人： Hidekazu Tsuchida , Liutauras Storasta
发明人： Hidekazu Tsuchida , Liutauras Storasta
IPC分类号： H01L21/322
CPC分类号： H01L21/0445 , C30B29/36 , C30B31/22 , H01L21/322 , H01L29/16 , H01L29/1608 , H01L29/7325 , H01L29/7395
摘要： It is an object to provide a method for improving the quality of an SiC layer by effectively reducing or eliminating the carrier trapping centers by high temperature annealing and an SiC semiconductor device fabricated by the method.A method for improving the quality of an SiC layer by eliminating or reducing some carrier trapping centers comprising the steps of: (a) carrying out ion implantation of carbon atoms (C), silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer (A) of the starting SiC crystal layer (E) to introduce excess carbon interstitials into the implanted surface layer, and (b) heating the layer for making the carbon interstitials (C) to diffuse out from the implanted surface layer (A) into a bulk layer (E) and for making the electrically active point defects in the bulk layer inactive. After the above steps, the surface layer (A) can be etched or mechanically removed. A semiconductor device according to the invention is fabricated by the method.
摘要翻译：本发明的目的是提供通过高温退火有效地减少或消除载流子俘获中心以及通过该方法制造的SiC半导体器件来提高SiC层的质量的方法。通过消除或减少一些载流子俘获中心来提高SiC层的质量的方法，包括以下步骤：（a）将碳原子（C），硅原子，氢原子或氦原子离子注入浅表面（E）的层（A），以将多余的碳间隙引入注入的表面层，和（b）加热用于使碳间隙（C）的层从注入的表面层（A）扩散出去，进入体层（E）并使得体层中的电活性点缺陷不活跃。在上述步骤之后，可以蚀刻或机械去除表面层（A）。根据本发明的半导体器件通过该方法制造。

2. 发明授权

US07834362B2 SiC crystal semiconductor device 有权
标题翻译： SiC晶体半导体器件
公开(公告)号：US07834362B2
公开(公告)日：2010-11-16
申请号：US12250558
申请日：2008-10-14
申请人： Hidekazu Tsuchida , Liutauras Storasta
发明人： Hidekazu Tsuchida , Liutauras Storasta
IPC分类号： H01L31/0312
CPC分类号： H01L21/0445 , C30B29/36 , C30B31/22 , H01L21/322 , H01L29/16 , H01L29/1608 , H01L29/7325 , H01L29/7395
摘要： A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers by high temperature annealing and a SiC semiconductor device fabricated by the method. The method for improving the quality of a SiC layer by eliminating or reducing some carrier trapping centers includes the steps of: (a) carrying out ion implantation of carbon atom interstitials (C), silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer (A) of the starting SiC crystal layer (E) to introduce excess carbon interstitials into the implanted surface layer, and (b) heating the layer for making the carbon interstitials (C) to diffuse out from the implanted surface layer (A) into a bulk layer (E) and for making the electrically active point defects in the bulk layer inactive. After the above steps, the surface layer (A) can be etched or mechanically removed. The SiC semiconductor device is fabricated by the method.
摘要翻译：通过高温退火有效地减少或消除载流子俘获中心，以及通过该方法制造的SiC半导体器件，提高SiC层的质量的方法。通过消除或减少一些载流子俘获中心来提高SiC层的质量的方法包括以下步骤：（a）将碳原子间隙（C），硅原子，氢原子或氦原子的离子注入进入浅层将起始SiC晶体层（E）的表面层（A）引入到注入表面层中，并且（b）加热碳填隙层（C）的层从注入表面层（A ）到体层（E）中并且使得体层中的电活性点缺陷无活性。在上述步骤之后，可以蚀刻或机械去除表面层（A）。通过该方法制造SiC半导体器件。

3. 发明授权

US07737011B2 Method for improving the quality of an SiC crystal and an SiC semiconductor device 有权
标题翻译：提高SiC晶体和SiC半导体器件的质量的方法
公开(公告)号：US07737011B2
公开(公告)日：2010-06-15
申请号：US11595232
申请日：2006-11-10
申请人： Hidekazu Tsuchida , Liutauras Storasta
发明人： Hidekazu Tsuchida , Liutauras Storasta
IPC分类号： H01L21/265
CPC分类号： H01L21/0445 , C30B29/36 , C30B31/22 , H01L21/322 , H01L29/16 , H01L29/1608 , H01L29/7325 , H01L29/7395
摘要： It is an object to provide a method for improving the quality of an SiC layer by effectively reducing or eliminating the carrier trapping centers by high temperature annealing and an SiC semiconductor device fabricated by the method.A method for improving the quality of an SiC layer by eliminating or reducing some carrier trapping centers comprising the steps of: (a) carrying out ion implantation of carbon atoms (C), silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer (A) of the starting SiC crystal layer (E) to introduce excess carbon interstitials into the implanted surface layer, and (b) heating the layer for making the carbon interstitials (C) to diffuse out from the implanted surface layer (A) into a bulk layer (E) and for making the electrically active point defects in the bulk layer inactive. After the above steps, the surface layer (A) can be etched or mechanically removed. A semiconductor device according to the invention is fabricated by the method.
摘要翻译：本发明的目的是提供通过高温退火有效地减少或消除载流子俘获中心以及通过该方法制造的SiC半导体器件来提高SiC层的质量的方法。通过消除或减少一些载流子俘获中心来提高SiC层的质量的方法，包括以下步骤：（a）将碳原子（C），硅原子，氢原子或氦原子离子注入浅表面（E）的层（A），以将多余的碳间隙引入注入的表面层，和（b）加热用于使碳间隙（C）的层从注入的表面层（A）扩散出去，进入体层（E）并使得体层中的电活性点缺陷不活跃。在上述步骤之后，可以蚀刻或机械去除表面层（A）。根据本发明的半导体器件通过该方法制造。

4. 发明申请

US20100276727A1 REVERSE-CONDUCTING SEMICONDUCTOR DEVICE 有权
标题翻译：反向导电半导体器件
公开(公告)号：US20100276727A1
公开(公告)日：2010-11-04
申请号：US12770451
申请日：2010-04-29
申请人： Liutauras STORASTA , Munaf Rahimo , Christoph Von Arx , Arnost Kopta , Raffael Schnell
发明人： Liutauras STORASTA , Munaf Rahimo , Christoph Von Arx , Arnost Kopta , Raffael Schnell
IPC分类号： H01L29/739
CPC分类号： H01L29/0834 , H01L29/66333 , H01L29/7395 , H01L29/7397
摘要： A reverse-conducting semiconductor device is disclosed with an electrically active region, which includes a freewheeling diode and an insulated gate bipolar transistor on a common wafer. Part of the wafer forms a base layer with a base layer thickness. A first layer of a first conductivity type with at least one first region and a second layer of a second conductivity type with at least one second and third region are alternately arranged on the collector side. Each region has a region area with a region width surrounded by a region border. The RC-IGBT can be configured such that the following exemplary geometrical rules are fulfilled: each third region area is an area, in which any two first regions have a distance bigger (i.e., larger) than two times the base layer thickness; the at least one second region is that part of the second layer, which is not the at least one third region; the at least one third region is arranged in the central part of the active region in such a way that there is a minimum distance between the third region border to the active region border of at least once the base layer thickness; the sum of the areas of the at least one third region is between 10 and 30% of the active region; and each first region width is smaller than the base layer thickness.
摘要翻译：公开了具有电活性区域的反向导电半导体器件，其包括在同一晶片上的续流二极管和绝缘栅双极晶体管。晶片的一部分形成具有基层厚度的基底层。具有至少一个第一区域和第二导电类型的具有至少一个第二和第三区域的第一导电类型的第一层交替地布置在集电极侧。每个区域具有由区域边界包围的区域宽度的区域区域。 RC-IGBT可以被配置为使得满足以下示例性几何规则：每个第三区域区域是任何两个第一区域具有比基底层厚度的两倍大的距离（即，更大）的区域; 所述至少一个第二区域是所述第二层的不是所述至少一个第三区域的部分; 至少一个第三区域被布置在有源区域的中心部分中，使得在至少一次基底层厚度的第三区域边界与有源区域边界之间存在最小距离; 所述至少一个第三区域的面积之和为有效区域的10％至30％; 并且每个第一区域宽度小于基底层厚度。

5. 发明申请

US20090047772A1 Method for Improving the Quality of a SiC Crystal 有权
标题翻译：提高SiC晶体质量的方法
公开(公告)号：US20090047772A1
公开(公告)日：2009-02-19
申请号：US12251590
申请日：2008-10-15
申请人： Hidekazu Tsuchida , Liutauras Storasta
发明人： Hidekazu Tsuchida , Liutauras Storasta
IPC分类号： H01L21/322
CPC分类号： H01L21/0445 , C30B29/36 , C30B31/22 , H01L21/322 , H01L29/16 , H01L29/1608 , H01L29/7325 , H01L29/7395
摘要： A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers in the as-grown SiC crystal. The method includes the steps of: (a) carrying out ion implantation of carbon atoms, silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer of the SiC crystal layer to introduce carbon interstitials into the surface layer, and (b) growing the SiC layer upward from the edge face of the surface layer into which the carbon interstitials have been introduced, and diffusing out the carbon interstitials that have been introduced into the surface layer from the surface layer into the grown layer and combining the carbon interstitials and point defects to make the electrically active point defects in the grown layer inactive.
摘要翻译：通过有效地减少或消除生长的SiC晶体中的载流子俘获中心来提高SiC层的质量的方法。该方法包括以下步骤：（a）将碳原子，硅原子，氢原子或氦原子的离子注入到SiC晶体层的浅表面层中，以将碳间隙引入表面层，（b）从已经引入碳间隙的表层的边缘面向上生长SiC层，并且将从表面层引入表层的碳间隙扩散到生长层中，并将碳间隙和点缺陷使得生长层中的电活性点缺陷无活性。

6. 发明授权

US08212283B2 Reverse-conducting semiconductor device 有权
标题翻译：反向导电半导体器件
公开(公告)号：US08212283B2
公开(公告)日：2012-07-03
申请号：US12770451
申请日：2010-04-29
申请人： Liutauras Storasta , Munaf Rahimo , Christoph Von Arx , Arnost Kopta , Raffael Schnell
发明人： Liutauras Storasta , Munaf Rahimo , Christoph Von Arx , Arnost Kopta , Raffael Schnell
IPC分类号： H01L29/739
CPC分类号： H01L29/0834 , H01L29/66333 , H01L29/7395 , H01L29/7397
摘要： A reverse-conducting semiconductor device is disclosed with an electrically active region, which includes a freewheeling diode and an insulated gate bipolar transistor on a common wafer. Part of the wafer forms a base layer with a base layer thickness. A first layer of a first conductivity type with at least one first region and a second layer of a second conductivity type with at least one second and third region are alternately arranged on the collector side. Each region has a region area with a region width surrounded by a region border. The RC-IGBT can be configured such that the following exemplary geometrical rules are fulfilled: each third region area is an area, in which any two first regions have a distance bigger (i.e., larger) than two times the base layer thickness; the at least one second region is that part of the second layer, which is not the at least one third region; the at least one third region is arranged in the central part of the active region in such a way that there is a minimum distance between the third region border to the active region border of at least once the base layer thickness; the sum of the areas of the at least one third region is between 10 and 30% of the active region; and each first region width is smaller than the base layer thickness.
摘要翻译：公开了具有电活性区域的反向导电半导体器件，其包括在同一晶片上的续流二极管和绝缘栅双极晶体管。晶片的一部分形成具有基层厚度的基底层。具有至少一个第一区域和第二导电类型的具有至少一个第二和第三区域的第一导电类型的第一层交替地布置在集电极侧。每个区域具有由区域边界包围的区域宽度的区域区域。 RC-IGBT可以被配置为使得满足以下示例性几何规则：每个第三区域区域是任何两个第一区域具有比基底层厚度的两倍大的距离（即，更大）的区域; 所述至少一个第二区域是所述第二层的不是所述至少一个第三区域的部分; 至少一个第三区域被布置在有源区域的中心部分中，使得在至少一次基底层厚度的第三区域边界与有源区域边界之间存在最小距离; 所述至少一个第三区域的面积之和为有效区域的10％至30％; 并且每个第一区域宽度小于基底层厚度。

7. 发明申请

US20100173475A1 Method for Improving the Quality of a SiC Crystal 有权
标题翻译：提高SiC晶体质量的方法
公开(公告)号：US20100173475A1
公开(公告)日：2010-07-08
申请号：US12724447
申请日：2010-03-16
申请人： Hidekazu Tsuchida , Liutauras Storasta
发明人： Hidekazu Tsuchida , Liutauras Storasta
IPC分类号： H01L21/26
CPC分类号： H01L21/0445 , C30B29/36 , C30B31/22 , H01L21/322 , H01L29/16 , H01L29/1608 , H01L29/7325 , H01L29/7395
摘要： A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers in the as-grown SiC crystal. The method includes the steps of: (a) carrying out ion implantation of carbon atoms, silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer of the SiC crystal layer to introduce carbon interstitials into the surface layer, and (b) growing the SiC layer upward from the edge face of the surface layer into which the carbon interstitials have been introduced, and diffusing out the carbon interstitials that have been introduced into the surface layer from the surface layer into the grown layer and combining the carbon interstitials and point defects to make the electrically active point defects in the grown layer inactive.
摘要翻译：通过有效地减少或消除生长的SiC晶体中的载流子俘获中心来提高SiC层的质量的方法。该方法包括以下步骤：（a）将碳原子，硅原子，氢原子或氦原子的离子注入到SiC晶体层的浅表面层中，以将碳间隙引入表面层，（b）从已经引入碳间隙的表层的边缘面向上生长SiC层，并且将从表面层引入表层的碳间隙扩散到生长层中，并将碳间隙和点缺陷使得生长层中的电活性点缺陷无活性。

8. 发明授权

US08815708B2 Method for improving the quality of a SiC crystal 有权
标题翻译：提高SiC晶体质量的方法
公开(公告)号：US08815708B2
公开(公告)日：2014-08-26
申请号：US12724447
申请日：2010-03-16
申请人： Hidekazu Tsuchida , Liutauras Storasta
发明人： Hidekazu Tsuchida , Liutauras Storasta
IPC分类号： H01L21/26 , C30B31/22 , H01L29/16 , H01L29/739 , C30B29/36 , H01L29/732 , H01L21/04
CPC分类号： H01L21/0445 , C30B29/36 , C30B31/22 , H01L21/322 , H01L29/16 , H01L29/1608 , H01L29/7325 , H01L29/7395
摘要： A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers in the as-grown SiC crystal. The method includes the steps of: (a) carrying out ion implantation of carbon atoms, silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer of the SiC crystal layer to introduce carbon interstitials into the surface layer, and (b) growing the SiC layer upward from the edge face of the surface layer into which the carbon interstitials have been introduced, and diffusing out the carbon interstitials that have been introduced into the surface layer from the surface layer into the grown layer and combining the carbon interstitials and point defects to make the electrically active point defects in the grown layer inactive.
摘要翻译：通过有效地减少或消除生长中的SiC晶体中的载流子俘获中心来提高SiC层的质量的方法。该方法包括以下步骤：（a）将碳原子，硅原子，氢原子或氦原子的离子注入到SiC晶体层的浅表面层中，以将碳间隙引入表面层，（b）从已经引入碳间隙的表层的边缘面向上生长SiC层，并且将从表面层引入表层的碳间隙扩散到生长层中，并将碳间隙和点缺陷使得生长层中的电活性点缺陷无活性。

9. 发明授权

US07754589B2 Method for improving the quality of a SiC crystal 有权
标题翻译：提高SiC晶体质量的方法
公开(公告)号：US07754589B2
公开(公告)日：2010-07-13
申请号：US12251590
申请日：2008-10-15
申请人： Hidekazu Tsuchida , Liutauras Storasta
发明人： Hidekazu Tsuchida , Liutauras Storasta
IPC分类号： H01L21/265
CPC分类号： H01L21/0445 , C30B29/36 , C30B31/22 , H01L21/322 , H01L29/16 , H01L29/1608 , H01L29/7325 , H01L29/7395
摘要： A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers in the as-grown SiC crystal. The method includes the steps of: (a) carrying out ion implantation of carbon atoms, silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer of the SiC crystal layer to introduce carbon interstitials into the surface layer, and (b) growing the SiC layer upward from the edge face of the surface layer into which the carbon interstitials have been introduced, and diffusing out the carbon interstitials that have been introduced into the surface layer from the surface layer into the grown layer and combining the carbon interstitials and point defects to make the electrically active point defects in the grown layer inactive.
摘要翻译：通过有效地减少或消除生长的SiC晶体中的载流子俘获中心来提高SiC层的质量的方法。该方法包括以下步骤：（a）将碳原子，硅原子，氢原子或氦原子的离子注入到SiC晶体层的浅表面层中，以将碳间隙引入表面层，（b）从已经引入碳间隙的表层的边缘面向上生长SiC层，并且将从表面层引入表层的碳间隙扩散到生长层中，并将碳间隙和点缺陷使得生长层中的电活性点缺陷无活性。

10. 发明申请

US20090039358A1 SiC Crystal Semiconductor Device 有权
标题翻译： SiC晶体半导体器件
公开(公告)号：US20090039358A1
公开(公告)日：2009-02-12
申请号：US12250558
申请日：2008-10-14
申请人： Hidekazu Tsuchida , Liutauras Storasta
发明人： Hidekazu Tsuchida , Liutauras Storasta
IPC分类号： H01L29/15
CPC分类号： H01L21/0445 , C30B29/36 , C30B31/22 , H01L21/322 , H01L29/16 , H01L29/1608 , H01L29/7325 , H01L29/7395
摘要： A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers by high temperature annealing and a SiC semiconductor device fabricated by the method. The method for improving the quality of a SiC layer by eliminating or reducing some carrier trapping centers includes the steps of: (a) carrying out ion implantation of carbon atom interstitials (C), silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer (A) of the starting SiC crystal layer (E) to introduce excess carbon interstitials into the implanted surface layer, and (b) heating the layer for making the carbon interstitials (C) to diffuse out from the implanted surface layer (A) into a bulk layer (E) and for making the electrically active point defects in the bulk layer inactive. After the above steps, the surface layer (A) can be etched or mechanically removed. The SiC semiconductor device is fabricated by the method.
摘要翻译：通过高温退火有效地减少或消除载流子俘获中心，以及通过该方法制造的SiC半导体器件，提高SiC层的质量的方法。通过消除或减少一些载流子俘获中心来提高SiC层的质量的方法包括以下步骤：（a）将碳原子间隙（C），硅原子，氢原子或氦原子的离子注入进入浅层将起始SiC晶体层（E）的表面层（A）引入到注入表面层中，并且（b）加热碳填隙层（C）的层从注入表面层（A ）到体层（E）中并且使得体层中的电活性点缺陷无活性。在上述步骤之后，可以蚀刻或机械去除表面层（A）。通过该方法制造SiC半导体器件。

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