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1. 发明申请

US20080026544A1 Method for improving the quality of an SiC crystal and an SiC semiconductor device 有权
标题翻译：提高SiC晶体和SiC半导体器件的质量的方法
公开(公告)号：US20080026544A1
公开(公告)日：2008-01-31
申请号：US11595232
申请日：2006-11-10
申请人： Hidekazu Tsuchida , Liutauras Storasta
发明人： Hidekazu Tsuchida , Liutauras Storasta
IPC分类号： H01L21/322
CPC分类号： H01L21/0445 , C30B29/36 , C30B31/22 , H01L21/322 , H01L29/16 , H01L29/1608 , H01L29/7325 , H01L29/7395
摘要： It is an object to provide a method for improving the quality of an SiC layer by effectively reducing or eliminating the carrier trapping centers by high temperature annealing and an SiC semiconductor device fabricated by the method.A method for improving the quality of an SiC layer by eliminating or reducing some carrier trapping centers comprising the steps of: (a) carrying out ion implantation of carbon atoms (C), silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer (A) of the starting SiC crystal layer (E) to introduce excess carbon interstitials into the implanted surface layer, and (b) heating the layer for making the carbon interstitials (C) to diffuse out from the implanted surface layer (A) into a bulk layer (E) and for making the electrically active point defects in the bulk layer inactive. After the above steps, the surface layer (A) can be etched or mechanically removed. A semiconductor device according to the invention is fabricated by the method.
摘要翻译：本发明的目的是提供通过高温退火有效地减少或消除载流子俘获中心以及通过该方法制造的SiC半导体器件来提高SiC层的质量的方法。通过消除或减少一些载流子俘获中心来提高SiC层的质量的方法，包括以下步骤：（a）将碳原子（C），硅原子，氢原子或氦原子离子注入浅表面（E）的层（A），以将多余的碳间隙引入注入的表面层，和（b）加热用于使碳间隙（C）的层从注入的表面层（A）扩散出去，进入体层（E）并使得体层中的电活性点缺陷不活跃。在上述步骤之后，可以蚀刻或机械去除表面层（A）。根据本发明的半导体器件通过该方法制造。

2. 发明申请

US20090047772A1 Method for Improving the Quality of a SiC Crystal 有权
标题翻译：提高SiC晶体质量的方法
公开(公告)号：US20090047772A1
公开(公告)日：2009-02-19
申请号：US12251590
申请日：2008-10-15
申请人： Hidekazu Tsuchida , Liutauras Storasta
发明人： Hidekazu Tsuchida , Liutauras Storasta
IPC分类号： H01L21/322
CPC分类号： H01L21/0445 , C30B29/36 , C30B31/22 , H01L21/322 , H01L29/16 , H01L29/1608 , H01L29/7325 , H01L29/7395
摘要： A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers in the as-grown SiC crystal. The method includes the steps of: (a) carrying out ion implantation of carbon atoms, silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer of the SiC crystal layer to introduce carbon interstitials into the surface layer, and (b) growing the SiC layer upward from the edge face of the surface layer into which the carbon interstitials have been introduced, and diffusing out the carbon interstitials that have been introduced into the surface layer from the surface layer into the grown layer and combining the carbon interstitials and point defects to make the electrically active point defects in the grown layer inactive.
摘要翻译：通过有效地减少或消除生长的SiC晶体中的载流子俘获中心来提高SiC层的质量的方法。该方法包括以下步骤：（a）将碳原子，硅原子，氢原子或氦原子的离子注入到SiC晶体层的浅表面层中，以将碳间隙引入表面层，（b）从已经引入碳间隙的表层的边缘面向上生长SiC层，并且将从表面层引入表层的碳间隙扩散到生长层中，并将碳间隙和点缺陷使得生长层中的电活性点缺陷无活性。

3. 发明申请

US20100173475A1 Method for Improving the Quality of a SiC Crystal 有权
标题翻译：提高SiC晶体质量的方法
公开(公告)号：US20100173475A1
公开(公告)日：2010-07-08
申请号：US12724447
申请日：2010-03-16
申请人： Hidekazu Tsuchida , Liutauras Storasta
发明人： Hidekazu Tsuchida , Liutauras Storasta
IPC分类号： H01L21/26
CPC分类号： H01L21/0445 , C30B29/36 , C30B31/22 , H01L21/322 , H01L29/16 , H01L29/1608 , H01L29/7325 , H01L29/7395
摘要： A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers in the as-grown SiC crystal. The method includes the steps of: (a) carrying out ion implantation of carbon atoms, silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer of the SiC crystal layer to introduce carbon interstitials into the surface layer, and (b) growing the SiC layer upward from the edge face of the surface layer into which the carbon interstitials have been introduced, and diffusing out the carbon interstitials that have been introduced into the surface layer from the surface layer into the grown layer and combining the carbon interstitials and point defects to make the electrically active point defects in the grown layer inactive.
摘要翻译：通过有效地减少或消除生长的SiC晶体中的载流子俘获中心来提高SiC层的质量的方法。该方法包括以下步骤：（a）将碳原子，硅原子，氢原子或氦原子的离子注入到SiC晶体层的浅表面层中，以将碳间隙引入表面层，（b）从已经引入碳间隙的表层的边缘面向上生长SiC层，并且将从表面层引入表层的碳间隙扩散到生长层中，并将碳间隙和点缺陷使得生长层中的电活性点缺陷无活性。

4. 发明授权

US07834362B2 SiC crystal semiconductor device 有权
标题翻译： SiC晶体半导体器件
公开(公告)号：US07834362B2
公开(公告)日：2010-11-16
申请号：US12250558
申请日：2008-10-14
申请人： Hidekazu Tsuchida , Liutauras Storasta
发明人： Hidekazu Tsuchida , Liutauras Storasta
IPC分类号： H01L31/0312
CPC分类号： H01L21/0445 , C30B29/36 , C30B31/22 , H01L21/322 , H01L29/16 , H01L29/1608 , H01L29/7325 , H01L29/7395
摘要： A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers by high temperature annealing and a SiC semiconductor device fabricated by the method. The method for improving the quality of a SiC layer by eliminating or reducing some carrier trapping centers includes the steps of: (a) carrying out ion implantation of carbon atom interstitials (C), silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer (A) of the starting SiC crystal layer (E) to introduce excess carbon interstitials into the implanted surface layer, and (b) heating the layer for making the carbon interstitials (C) to diffuse out from the implanted surface layer (A) into a bulk layer (E) and for making the electrically active point defects in the bulk layer inactive. After the above steps, the surface layer (A) can be etched or mechanically removed. The SiC semiconductor device is fabricated by the method.
摘要翻译：通过高温退火有效地减少或消除载流子俘获中心，以及通过该方法制造的SiC半导体器件，提高SiC层的质量的方法。通过消除或减少一些载流子俘获中心来提高SiC层的质量的方法包括以下步骤：（a）将碳原子间隙（C），硅原子，氢原子或氦原子的离子注入进入浅层将起始SiC晶体层（E）的表面层（A）引入到注入表面层中，并且（b）加热碳填隙层（C）的层从注入表面层（A ）到体层（E）中并且使得体层中的电活性点缺陷无活性。在上述步骤之后，可以蚀刻或机械去除表面层（A）。通过该方法制造SiC半导体器件。

5. 发明授权

US07737011B2 Method for improving the quality of an SiC crystal and an SiC semiconductor device 有权
标题翻译：提高SiC晶体和SiC半导体器件的质量的方法
公开(公告)号：US07737011B2
公开(公告)日：2010-06-15
申请号：US11595232
申请日：2006-11-10
申请人： Hidekazu Tsuchida , Liutauras Storasta
发明人： Hidekazu Tsuchida , Liutauras Storasta
IPC分类号： H01L21/265
CPC分类号： H01L21/0445 , C30B29/36 , C30B31/22 , H01L21/322 , H01L29/16 , H01L29/1608 , H01L29/7325 , H01L29/7395
摘要： It is an object to provide a method for improving the quality of an SiC layer by effectively reducing or eliminating the carrier trapping centers by high temperature annealing and an SiC semiconductor device fabricated by the method.A method for improving the quality of an SiC layer by eliminating or reducing some carrier trapping centers comprising the steps of: (a) carrying out ion implantation of carbon atoms (C), silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer (A) of the starting SiC crystal layer (E) to introduce excess carbon interstitials into the implanted surface layer, and (b) heating the layer for making the carbon interstitials (C) to diffuse out from the implanted surface layer (A) into a bulk layer (E) and for making the electrically active point defects in the bulk layer inactive. After the above steps, the surface layer (A) can be etched or mechanically removed. A semiconductor device according to the invention is fabricated by the method.
摘要翻译：本发明的目的是提供通过高温退火有效地减少或消除载流子俘获中心以及通过该方法制造的SiC半导体器件来提高SiC层的质量的方法。通过消除或减少一些载流子俘获中心来提高SiC层的质量的方法，包括以下步骤：（a）将碳原子（C），硅原子，氢原子或氦原子离子注入浅表面（E）的层（A），以将多余的碳间隙引入注入的表面层，和（b）加热用于使碳间隙（C）的层从注入的表面层（A）扩散出去，进入体层（E）并使得体层中的电活性点缺陷不活跃。在上述步骤之后，可以蚀刻或机械去除表面层（A）。根据本发明的半导体器件通过该方法制造。

6. 发明授权

US08815708B2 Method for improving the quality of a SiC crystal 有权
标题翻译：提高SiC晶体质量的方法
公开(公告)号：US08815708B2
公开(公告)日：2014-08-26
申请号：US12724447
申请日：2010-03-16
申请人： Hidekazu Tsuchida , Liutauras Storasta
发明人： Hidekazu Tsuchida , Liutauras Storasta
IPC分类号： H01L21/26 , C30B31/22 , H01L29/16 , H01L29/739 , C30B29/36 , H01L29/732 , H01L21/04
CPC分类号： H01L21/0445 , C30B29/36 , C30B31/22 , H01L21/322 , H01L29/16 , H01L29/1608 , H01L29/7325 , H01L29/7395
摘要： A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers in the as-grown SiC crystal. The method includes the steps of: (a) carrying out ion implantation of carbon atoms, silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer of the SiC crystal layer to introduce carbon interstitials into the surface layer, and (b) growing the SiC layer upward from the edge face of the surface layer into which the carbon interstitials have been introduced, and diffusing out the carbon interstitials that have been introduced into the surface layer from the surface layer into the grown layer and combining the carbon interstitials and point defects to make the electrically active point defects in the grown layer inactive.
摘要翻译：通过有效地减少或消除生长中的SiC晶体中的载流子俘获中心来提高SiC层的质量的方法。该方法包括以下步骤：（a）将碳原子，硅原子，氢原子或氦原子的离子注入到SiC晶体层的浅表面层中，以将碳间隙引入表面层，（b）从已经引入碳间隙的表层的边缘面向上生长SiC层，并且将从表面层引入表层的碳间隙扩散到生长层中，并将碳间隙和点缺陷使得生长层中的电活性点缺陷无活性。

7. 发明授权

US07754589B2 Method for improving the quality of a SiC crystal 有权
标题翻译：提高SiC晶体质量的方法
公开(公告)号：US07754589B2
公开(公告)日：2010-07-13
申请号：US12251590
申请日：2008-10-15
申请人： Hidekazu Tsuchida , Liutauras Storasta
发明人： Hidekazu Tsuchida , Liutauras Storasta
IPC分类号： H01L21/265
CPC分类号： H01L21/0445 , C30B29/36 , C30B31/22 , H01L21/322 , H01L29/16 , H01L29/1608 , H01L29/7325 , H01L29/7395
摘要： A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers in the as-grown SiC crystal. The method includes the steps of: (a) carrying out ion implantation of carbon atoms, silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer of the SiC crystal layer to introduce carbon interstitials into the surface layer, and (b) growing the SiC layer upward from the edge face of the surface layer into which the carbon interstitials have been introduced, and diffusing out the carbon interstitials that have been introduced into the surface layer from the surface layer into the grown layer and combining the carbon interstitials and point defects to make the electrically active point defects in the grown layer inactive.
摘要翻译：通过有效地减少或消除生长的SiC晶体中的载流子俘获中心来提高SiC层的质量的方法。该方法包括以下步骤：（a）将碳原子，硅原子，氢原子或氦原子的离子注入到SiC晶体层的浅表面层中，以将碳间隙引入表面层，（b）从已经引入碳间隙的表层的边缘面向上生长SiC层，并且将从表面层引入表层的碳间隙扩散到生长层中，并将碳间隙和点缺陷使得生长层中的电活性点缺陷无活性。

8. 发明申请

US20090039358A1 SiC Crystal Semiconductor Device 有权
标题翻译： SiC晶体半导体器件
公开(公告)号：US20090039358A1
公开(公告)日：2009-02-12
申请号：US12250558
申请日：2008-10-14
申请人： Hidekazu Tsuchida , Liutauras Storasta
发明人： Hidekazu Tsuchida , Liutauras Storasta
IPC分类号： H01L29/15
CPC分类号： H01L21/0445 , C30B29/36 , C30B31/22 , H01L21/322 , H01L29/16 , H01L29/1608 , H01L29/7325 , H01L29/7395
摘要： A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers by high temperature annealing and a SiC semiconductor device fabricated by the method. The method for improving the quality of a SiC layer by eliminating or reducing some carrier trapping centers includes the steps of: (a) carrying out ion implantation of carbon atom interstitials (C), silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer (A) of the starting SiC crystal layer (E) to introduce excess carbon interstitials into the implanted surface layer, and (b) heating the layer for making the carbon interstitials (C) to diffuse out from the implanted surface layer (A) into a bulk layer (E) and for making the electrically active point defects in the bulk layer inactive. After the above steps, the surface layer (A) can be etched or mechanically removed. The SiC semiconductor device is fabricated by the method.
摘要翻译：通过高温退火有效地减少或消除载流子俘获中心，以及通过该方法制造的SiC半导体器件，提高SiC层的质量的方法。通过消除或减少一些载流子俘获中心来提高SiC层的质量的方法包括以下步骤：（a）将碳原子间隙（C），硅原子，氢原子或氦原子的离子注入进入浅层将起始SiC晶体层（E）的表面层（A）引入到注入表面层中，并且（b）加热碳填隙层（C）的层从注入表面层（A ）到体层（E）中并且使得体层中的电活性点缺陷无活性。在上述步骤之后，可以蚀刻或机械去除表面层（A）。通过该方法制造SiC半导体器件。

9. 发明授权

US08815711B2 Manufacturing apparatus and method for semiconductor device and cleaning method of manufacturing apparatus for semiconductor 有权
标题翻译：半导体装置的制造装置和方法以及半导体制造装置的清洗方法
公开(公告)号：US08815711B2
公开(公告)日：2014-08-26
申请号：US13160209
申请日：2011-06-14
申请人： Kunihiko Suzuki , Hideki Ito , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito
发明人： Kunihiko Suzuki , Hideki Ito , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito
IPC分类号： H01L21/20 , H01L21/36 , H01L21/31 , H01L21/469 , B08B17/02 , H01L21/67 , C23C16/44 , H01L21/205
CPC分类号： B08B17/02 , C23C16/4405 , C23C16/4412 , H01L21/67109
摘要： A manufacturing apparatus for a semiconductor device, including: a reaction chamber configured to perform film formation on a wafer; a process gas supplying mechanism provided in an upper part of the reaction chamber and configured to introduce process gas to an interior of the reaction chamber; a gas discharging mechanism provided in a lower part of the reaction chamber and configured to discharge gas from the reaction chamber; a supporting member configured to hold the wafer; a cleaning gas supplying mechanism provided in an outer periphery of the supporting member and configured to emit cleaning gas in an outer periphery direction below an upper end of the supporting member; a heater configured to heat the wafer; and a rotary driving mechanism configured to rotate the wafer.
摘要翻译：一种半导体器件的制造装置，包括：反应室，被配置为在晶片上进行成膜; 工艺气体供给机构，设置在所述反应室的上部，并且被配置为将处理气体引入所述反应室的内部; 气体排出机构，设置在所述反应室的下部，并且构成为从所述反应室排出气体; 构造成保持晶片的支撑构件; 清洁气体供给机构，其设置在所述支撑部件的外周，并且构造成在所述支撑部件的上端的外周方向上排出清洗气体; 被配置为加热晶片的加热器; 以及旋转驱动机构，其构造成使晶片旋转。

10. 发明授权

US08455269B2 Method for recovering an on-state forward voltage and, shrinking stacking faults in bipolar semiconductor devices, and the bipolar semiconductor devices 失效
标题翻译：用于恢复双极半导体器件中的导通状态正向电压和收缩堆垛层错的方法以及双极型半导体器件
公开(公告)号：US08455269B2
公开(公告)日：2013-06-04
申请号：US12376199
申请日：2006-08-04
申请人： Toshiyuki Miyanagi , Hidekazu Tsuchida , Isaho Kamata , Yoshitaka Sugawara , Koji Nakayama , Ryosuke Ishii
发明人： Toshiyuki Miyanagi , Hidekazu Tsuchida , Isaho Kamata , Yoshitaka Sugawara , Koji Nakayama , Ryosuke Ishii
IPC分类号： H01L21/00
CPC分类号： H01L29/045 , H01L23/345 , H01L29/0619 , H01L29/1608 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： In a bipolar semiconductor device such that electrons and holes are recombined in a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate at the time of on-state forward bias operation; an on-state forward voltage increased in a silicon carbide bipolar semiconductor device is recovered by shrinking the stacking fault area enlarged by on-state forward bias operation. In a method of this invention, the bipolar semiconductor device in which the stacking fault area enlarged and the on-state forward voltage has been increased by on-state forward bias operation, is heated at a temperature of higher than 350° C.
摘要翻译：在双极型半导体器件中，在通态正向偏压工作时，从碳化硅单晶衬底的表面生长的碳化硅外延膜中电子和空穴复合; 在碳化硅双极半导体器件中增加的导通状态正向电压通过收缩通过接通状态正向偏置操作而扩大的堆垛层错的区域来恢复。在本发明的方法中，通过接通状态的正向偏压操作来增加堆垛层错扩大区域和导通状态正向电压的双极性半导体器件在高于350℃的温度下被加热。

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