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1. 发明授权

US08415690B2 Epitaxial substrate for semiconductor element, semiconductor element, and method for producing epitaxial substrate for semiconductor element 有权
标题翻译：半导体元件用外延基板，半导体元件及半导体元件用外延基板的制造方法
公开(公告)号：US08415690B2
公开(公告)日：2013-04-09
申请号：US13457931
申请日：2012-04-27
申请人： Makoto Miyoshi , Shigeaki Sumiya , Mikiya Ichimura , Mitsuhiro Tanaka
发明人： Makoto Miyoshi , Shigeaki Sumiya , Mikiya Ichimura , Mitsuhiro Tanaka
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L21/02381 , C23C16/0272 , C23C16/029 , C23C16/303 , C30B25/02 , C30B29/403 , C30B29/68 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/02505 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L29/1075 , H01L29/2003 , H01L29/7786 , H01L29/872
摘要： Provided is an epitaxial substrate using a silicon substrate as a base substrate. An epitaxial substrate, in which a group of group-III nitride layers are formed on a (111) single crystal Si substrate such that a (0001) crystal plane of the group of group-III nitride layers is substantially in parallel with a surface of the substrate, includes: a first group-III nitride layer made of AlN with many defects configured of at least one kind from a columnar or granular crystal or domain; a second group-III nitride layer whose interface with the first group-III nitride layer is shaped into a three-dimensional concave-convex surface; and a third group-III nitride layer epitaxially formed on the second group-III nitride layer as a graded composition layer in which the proportion of existence of Al is smaller in a portion closer to a fourth group-III nitride.
摘要翻译：提供了使用硅衬底作为基底的外延衬底。一种外延衬底，其中在（111）单晶Si衬底上形成一组III族氮化物层，使得III族氮化物层组的（0001）晶面基本上平行于所述基板包括：由AlN制成的第一III族氮化物层，其具有由柱状或粒状晶体或畴中至少一种构成的许多缺陷; 与第一III族氮化物层的界面成形为三维凹凸面的第二III族氮化物层; 以及外延形成在第二III族氮化物层上的第三III族氮化物层，作为梯度组成层，其中Al的存在比例在更接近第四族III族氮化物的部分中较小。

2. 发明申请

US20120126293A1 EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 有权
标题翻译：用于半导体器件的外延衬底，用于制造用于半导体器件的外延衬底的方法和半导体器件
公开(公告)号：US20120126293A1
公开(公告)日：2012-05-24
申请号：US13353759
申请日：2012-01-19
申请人： Shigeaki Sumiya , Makoto Miyoshi , Tomohiko Sugiyama , Mikiya Ichimura , Yoshitaka Kuraoka , Mitsuhiro Tanaka
发明人： Shigeaki Sumiya , Makoto Miyoshi , Tomohiko Sugiyama , Mikiya Ichimura , Yoshitaka Kuraoka , Mitsuhiro Tanaka
IPC分类号： H01L29/205 , H01L21/20
CPC分类号： H01L21/0254 , C30B25/18 , C30B25/183 , C30B29/403 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02494 , H01L21/02502 , H01L21/0262 , H01L29/2003 , H01L29/7786 , H01L29/872
摘要： An epitaxial substrate, in which a group of group-III nitride layers is formed on a single-crystal silicon substrate so that a crystal plane is approximately parallel to a substrate surface, comprises: a first group-III nitride layer formed of AlN on the base substrate; a second group-III nitride layer formed of InxxAlyyGazzN (xx+yy+zz=1, 0≦xx≦1, 0
摘要翻译：在单晶硅衬底上形成一组III族氮化物层，使得晶面大致平行于衬底表面的外延衬底包括：由第一III族氮化物层形成的第一III族氮化物层基底; 在第一III族氮化物层上由InxxAlyyGazzN（xx + yy + zz = 1,0,0

3. 发明授权

US08044485B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08044485B2
公开(公告)日：2011-10-25
申请号：US11692290
申请日：2007-03-28
申请人： Makoto Miyoshi , Yoshitaka Kuraoka
发明人： Makoto Miyoshi , Yoshitaka Kuraoka
IPC分类号： H01L29/47
CPC分类号： H01L29/872 , H01L29/2003 , H01L29/66462
摘要： A semiconductor device made of a group-III nitride semiconductor having excellent properties is provided. The semiconductor device has a horizontal diode structure of Schottky type or P-N junction type, or combined type thereof having a main conduction pathway in the horizontal direction in a conductive layer with unit anode portions and unit cathode electrodes being integrated adjacently to each other in the horizontal direction. The conductive layer is preferably formed by depositing a group-III nitride layer and generating a two-dimensional electron gas layer on the interface. Forming the conductive layer of the group-III nitride having high breakdown field allows the breakdown voltage to be kept high while the gap between electrodes is narrow, which achieves a semiconductor device having high output current per chip area. Further, an electrode pad layer provided on an insulation protecting layer relieves electric field concentration at a junction of each unit anode portion and each unit cathode electrode, which achieves higher breakdown voltage.
摘要翻译：提供由具有优异特性的III-III族氮化物半导体制成的半导体器件。半导体器件具有肖特基型或PN结型的水平二极管结构，或者其组合型在导电层中具有在水平方向上的主导电通路，其中单元阳极部分和单元阴极电极在水平方向彼此相邻地相互整合方向。导电层优选通过沉积III族氮化物层并在界面上产生二维电子气层形成。形成具有高击穿场的III族氮化物的导电层允许击穿电压保持较高，同时电极之间的间隙窄，这实现了每芯片面积具有高输出电流的半导体器件。此外，设置在绝缘保护层上的电极焊盘层可以减轻每个单元阳极部分和每个单位阴极电极的接合处的电场浓度，从而实现更高的击穿电压。

4. 发明授权

US08026718B2 Magnetic sensor, hall element, hall IC, magnetoresistive effect element, method of fabricating hall element, and method of fabricating magnetoresistive effect element 失效
标题翻译：磁传感器，霍尔元件，霍尔IC，磁阻效应元件，霍尔元件制造方法以及制造磁阻效应元件的方法
公开(公告)号：US08026718B2
公开(公告)日：2011-09-27
申请号：US12193851
申请日：2008-08-19
申请人： Makoto Miyoshi , Mitsuhiro Tanaka
发明人： Makoto Miyoshi , Mitsuhiro Tanaka
IPC分类号： G01R33/07
CPC分类号： G01R33/07
摘要： An aspect of the present invention provides a magnetic sensor which is operated better at a high temperature range not lower than 300° C. compared with a conventional magnetic sensor. A operating layer having a heterojunction interface is formed by laminating a first layer made of GaN whose electron concentration is not more than 1×1016/cm3 at room temperature and a second layer made of AlxGa1-xN (0
摘要翻译：本发明的一个方面提供一种磁传感器，其与传统的磁传感器相比在不低于300℃的高温范围内更好地运行。具有异质结界面的工作层通过层叠由室温下电子浓度不大于1×1016 / cm3的GaN制成的第一层和由Al x Ga 1-x N（0

5. 发明授权

US07517160B2 Optical module 失效
标题翻译：光模块
公开(公告)号：US07517160B2
公开(公告)日：2009-04-14
申请号：US12068744
申请日：2008-02-11
申请人： Makoto Miyoshi , Kazuya Sasaki
发明人： Makoto Miyoshi , Kazuya Sasaki
IPC分类号： G02B6/36 , G02B6/42
CPC分类号： G02B6/4201 , G02B6/4261
摘要： An optical module which can be inserted into and removed from a cage, the optical module includes a lock pin inserted into a lock hole provided in the cage and engaging the cage and the optical module with each other in a state where the optical module is inserted into the cage; a tongue having an axial part and configured to be rotated with respect to the axial part in a direction where the insertion of the lock pin into the lock hole is released; and a bail configured to be rotated with respect to a rotational axel so that the tongue is rotated. The engagement of the cage and the optical module formed by insertion of the lock pin into the lock hole is released by rotating the bail 90 degrees.
摘要翻译：光学模块可以插入到保持架中并从壳体中移除，该光学模块包括插入到保持架中的锁定孔中的锁定销，并且在光学模块被插入的状态下将保持架和光学模块彼此接合进笼子里具有轴向部分并且构造成在锁定销插入锁定孔的方向上相对于轴向部分旋转的舌头; 以及配置成相对于旋转轴旋转以使舌头旋转的吊环。将保持架和通过将锁定销插入锁定孔而形成的光学模块的接合通过将吊环旋转90度来释放。

6. 发明申请

US20080013894A1 Optical receptacle and sleeve 审中-公开
标题翻译：光学插座和套筒
公开(公告)号：US20080013894A1
公开(公告)日：2008-01-17
申请号：US11636504
申请日：2006-12-11
申请人： Shinichi Aoki , Makoto Miyoshi , Kazuya Sasaki
发明人： Shinichi Aoki , Makoto Miyoshi , Kazuya Sasaki
IPC分类号： G02B6/36
CPC分类号： G02B6/421 , G02B6/3877 , G02B6/4292
摘要： An optical receptacle includes a fiber stub; and a sleeve having a sleeve main body where the fiber stub is installed, the sleeve supported by a supporting surface of a supporting member. In the optical receptacle, a leaning prevention member is provided at the sleeve; the leaning prevention member is formed so as to extend outward from the sleeve main body; and the leaning prevention member prevents leaning of the sleeve main body from the supporting surface by coming in contact with the supporting surface.
摘要翻译：光学插座包括光纤短截线; 以及具有安装有纤维短截线的套筒主体的套筒，所述套筒由支撑构件的支撑表面支撑。在光学插座中，在套筒上设有防倾斜部件; 倾斜防止构件形成为从套筒主体向外延伸; 并且倾斜防止构件通过与支撑表面接触而防止套筒主体从支撑表面倾斜。

7. 发明授权

US07199408B2 Semiconductor multilayer structure, semiconductor device and HEMT device 有权
标题翻译：半导体多层结构，半导体器件和HEMT器件
公开(公告)号：US07199408B2
公开(公告)日：2007-04-03
申请号：US11151693
申请日：2005-06-13
申请人： Makoto Miyoshi
发明人： Makoto Miyoshi
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L29/1075 , H01L29/2003 , H01L29/66469 , H01L29/7786
摘要： A semiconductor device includes an underlying layer made of a group-III nitride containing at least Al and formed on a substrate, and a group of stacked semiconductor layers including a first semiconductor layer made of a group-III nitride, preferably GaN, a second semiconductor layer made of AlN and a third semiconductor layer made of a group-III nitride containing at least Al, preferably AlxGa1-xN where x≧0.2. The semiconductor device suppresses the reduction in electron mobility resulting from lattice defects and crystal lattice randomness. This achieves a HEMT device having a sheet carrier density of not less than 1×1013/cm2 and an electron mobility of not less than 20000 cm2/V·s at a temperature of 15 K.
摘要翻译：半导体器件包括由至少包含Al并且形成在衬底上的III族氮化物制成的下层，以及包括由III族氮化物制成的第一半导体层，优选为GaN的第二半导体层，第二半导体由AlN制成的层以及由含有至少Al，优选为Al x Ga 1-x N的III-III族氮化物制成的第三半导体层，其中x> = 0.2。半导体器件抑制由晶格缺陷和晶格随机性引起的电子迁移率的降低。这实现了具有不小于1×10 13 / cm 2的片载体密度的HEMT器件，并且电子迁移率不小于20000cm 2 / > / Vs。

8. 发明授权

US07135347B2 Method for manufacturing nitride film including high-resistivity GaN layer and epitaxial substrate manufactured by the method 有权
标题翻译：用于制造包括通过该方法制造的高电阻率GaN层和外延衬底的氮化物膜的方法
公开(公告)号：US07135347B2
公开(公告)日：2006-11-14
申请号：US10873767
申请日：2004-06-22
申请人： Makoto Miyoshi , Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa , Hiroyasu Ishikawa
发明人： Makoto Miyoshi , Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa , Hiroyasu Ishikawa
IPC分类号： H01L21/00
CPC分类号： C30B29/40 , C30B25/02 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262
摘要： A method for manufacturing a nitride film including a high-resistivity GaN layer includes a step of allowing a Group-III source gas containing an organic metal compound, a Group-V source gas containing ammonia, a carrier gas for the Group-III source gas, and a carrier gas for the Group-V source gas to flow over a predetermined monocrystalline wafer maintained at 1,000° C. or more and also includes a step of epitaxially growing a nitride film, including a GaN layer, on the monocrystalline wafer by a vapor phase reaction of the source gases. At least one of the carrier gases contains nitrogen while the wafer temperature is being increased before the reaction is carried out. At least one of the carrier gases contains hydrogen and nitrogen and has a total hydrogen and nitrogen content of 90 percent by volume or more in at least one part of the epitaxially growing step.
摘要翻译：制造包括高电阻率GaN层的氮化物膜的方法包括以下步骤：允许含有有机金属化合物的III族源气体，含有氨的V族气体，用于III族源气体的载气，并且用于V族源气体的载气在保持在1000℃或更高的预定单晶晶片上流动，并且还包括在单晶晶片上外延生长包括GaN层的氮化物膜的步骤源气体的气相反应。在反应进行之前，至少一种载气含有氮，同时晶片温度升高。至少一种载气含有氢和氮，并且在外延生长步骤的至少一部分中，总氢和氮的总含量为90体积％以上。

9. 发明授权

US06235981B1 P-type thermoelectric converting substance and method of manufacturing the same 失效
标题翻译： P型热电转换物质及其制造方法
公开(公告)号：US06235981B1
公开(公告)日：2001-05-22
申请号：US09270102
申请日：1999-03-16
申请人： Makoto Miyoshi , Yuichiro Imanishi , Keiko Kushibiki , Masakazu Kobayashi , Kenji Furuya , Kazuhiko Shinohara
发明人： Makoto Miyoshi , Yuichiro Imanishi , Keiko Kushibiki , Masakazu Kobayashi , Kenji Furuya , Kazuhiko Shinohara
IPC分类号： H01L3534
CPC分类号： H01L35/18 , H01L35/22
摘要： A p-type thermoelectric converting substance used as a p-type semiconductor in a thermoelectric converting module consisting essentially of a substance expressed by a chemical formula CoSbxSny or CoSbxGey (2.7 3), and containing a small amount of oxygen z defined by 2(x+y−3)≧z. The amount of oxygen z is preferably limited such that it is not higher than 0.1 molecules per 1 molecule of Co. An alloy ingot consisting essentially of CoSbxSny or CoSbxGey (2.7 3) is ground to obtain a raw material powder. Then, the powder is cast into a mold, and the mold is sintered under a non-oxidizing or reducing atmosphere. The thus obtained substance reveals p-conductivity in a stable manner over a wide temperature range, and has excellent thermoelectric converting properties.
摘要翻译：在热电转换模块中用作p型半导体的p型热电转换物质，其主要由化学式CoSbxSny或CoSbxGey（2.7 3）表示的物质组成），并且含有由2（x + y-3）> = z定义的少量氧z。优选限定氧气的量，使得每1分子公司不超过0.1分子。基本上由CoSbxSny或CoSbxGey（2.7 3）组成的合金锭）粉碎，得到原料粉末。然后将粉末浇注到模具中，并将模具在非氧化或还原气氛下烧结。由此获得的物质在宽的温度范围内以稳定的方式显示出p导电性，并且具有优异的热电转换性能。

10. 发明授权

US5994637A Thermoelectric conversion module and method of manufacturing the same 失效
标题翻译：热电转换模块及其制造方法
公开(公告)号：US5994637A
公开(公告)日：1999-11-30
申请号：US201000
申请日：1998-11-30
申请人： Yuichiro Imanishi , Makoto Miyoshi , Tetsuo Watanabe , Keiko Kushibiki , Kazuhiko Shinohara , Masakazu Kobayashi , Kenji Furuya
发明人： Yuichiro Imanishi , Makoto Miyoshi , Tetsuo Watanabe , Keiko Kushibiki , Kazuhiko Shinohara , Masakazu Kobayashi , Kenji Furuya
IPC分类号： H01L35/16 , H01L35/32 , H01L35/34
CPC分类号： H01L35/32 , H01L35/34
摘要： A thermoelectric conversion module having a large capacity and a curved surface is manufactured by immersing a honeycomb structural body having a number of through holes, openings of every other through holes being closed by clogging members, into a semiconductor material melt of one conductivity type to suck the semiconductor material melt into through holes whose openings are not closed, cooling the thus sucked semiconductor material melt to form semiconductor elements of one conductivity type, immersing again the honeycomb structural body after removing said clogging members into a semiconductor material melt of the other conductivity type to suck the semiconductor material melt into the through holes, cooling the thus sucked semiconductor material melt to form semiconductor elements of the other conductivity type, cutting the honeycomb structural body into a plurality of thermoelectric conversion module main bodies, and providing metal electrodes of both surfaces of a thermoelectric conversion module main body such that alternate semiconductor elements of one and the other conductivity types are connected in series.
摘要翻译：通过将具有多个通孔的蜂窝结构体浸渍到一个导电类型的半导体材料熔体中，将具有多个通孔的每隔一个通孔的开口浸入到具有一个导电类型的半导体材料熔体中来制造具有大容量和弯曲表面的热电转换模块半导体材料熔化成开口未闭合的通孔，冷却由此被吸引的半导体材料熔融物形成一种导电类型的半导体元件，在将所述堵塞构件移除到另一种导电类型的半导体材料熔体中之后，再次将蜂窝结构体再次浸没将半导体材料熔体吸入通孔中，冷却由此吸收的半导体材料熔体形成另一种导电类型的半导体元件，将蜂窝结构体切割成多个热电转换模块主体，并且提供两个表面的金属电极的热电 c转换模块主体，使得一种和另一种导电类型的交替半导体元件串联连接。

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