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1. 发明授权

US07927981B2 Apparatus for depositing silicon-based thin film and method for depositing silicon-based thin film 有权
标题翻译：用于沉积硅基薄膜的设备和沉积硅基薄膜的方法
公开(公告)号：US07927981B2
公开(公告)日：2011-04-19
申请号：US12411507
申请日：2009-03-26
申请人： Minoru Imaeda , Yuichiro Imanishi , Takao Saito
发明人： Minoru Imaeda , Yuichiro Imanishi , Takao Saito
IPC分类号： H01L21/00 , H01L21/31 , H01L21/469
CPC分类号： H01J37/32568 , C23C16/24 , C23C16/515 , C23C16/54 , C23C16/545 , H01J37/32018 , H01J37/32027 , H01J37/32045 , H01J37/3244
摘要： A silicon-based thin film depositing apparatus, including a plurality of transparent electrodes disposed to face corresponding counter electrodes with a space therebetween. Subsequently, while injecting a raw material gas from raw material gas injection orifices toward the supporting electrodes and also injecting a barrier gas from barrier gas injection orifices in the same direction as the direction in which the raw material gas is injected, the gases are discharged from a gas outlet, and thereby, the pressure in a chamber is controlled to a pressure of more than 1 kPa. Then, a DC pulse voltage is applied to each counter electrode to deposit a silicon-based thin film. A DC pulse voltage is applied to perform discharge. Therefore, even in a state where the distance between the electrodes is increased, plasma can be generated efficiently, and the in-plane distribution of film thickness can be improved.
摘要翻译：一种硅基薄膜沉积设备，包括多个透明电极，设置成面对相应的对置电极，其间具有空间。随后，在从原料气体喷射孔向支撑电极注入原料气体的同时，从与阻止气体注入孔注入的阻挡气体沿与注入原料气体的方向相同的方向注入时，将气体从气体出口，从而将室中的压力控制在大于1kPa的压力。然后，将DC脉冲电压施加到每个对电极以沉积硅基薄膜。施加直流脉冲电压进行放电。因此，即使在电极之间的距离增加的状态下，也能有效地产生等离子体，能够提高膜厚的面内分布。

2. 发明申请

US20100221155A1 Sterilization/Aseptization Apparatus 审中-公开
标题翻译：灭菌/消毒装置
公开(公告)号：US20100221155A1
公开(公告)日：2010-09-02
申请号：US12084038
申请日：2006-10-24
申请人： Naohiro Shimizu , Masahiro Wakita , Yuichiro Imanishi
发明人： Naohiro Shimizu , Masahiro Wakita , Yuichiro Imanishi
IPC分类号： A61L2/02 , B01J19/12 , A61L2/10 , A61L2/14
CPC分类号： A61L2/10 , A61L2/14
摘要： An aseptization apparatus 1 includes a sealed container 11 forming an aseptization space 191, a nitrogen gas supplying system 12 for converting atmosphere of the aseptization space 191 into nitrogen atmosphere, an electrode pair 13 disposed in the aseptization space 191, a pulse power supply 14 for repeatedly applying an electric pulse to the electrode pair 13, and a mirror 15 for returning a short-wavelength ultraviolet ray going from inside of the aseptization space 191 to outside to inside of the aseptization space 191. In a state where an aseptization object substance ST1 is present in a plasma generation region 192 between the electrode pair 13, the aseptization apparatus 1 causes a pulse electric field generated by electric pulse application to the electrode pair 13, a nitrogen radical 195 contained in plasma generated in nitrogen atmosphere resulting from fine streamer discharge, and a short-wavelength ultraviolet ray 196 emitted by nitrogen atmosphere resulting from fine streamer discharge to act on bacteria for aseptization of the aseptization object substance ST1.
摘要翻译：无菌化装置1包括形成无菌空间191的密闭容器11，将无菌空间191的气氛转换成氮气的氮气供给系统12，设置在无菌空间191内的电极对13，用于向电极对13反复施加电脉冲，以及将从无菌化空间191的内部返回的短波长的紫外线返回到无菌化空间191的外部至内部的反射镜15.在无菌化物质ST1 存在于电极对13之间的等离子体产生区域192中，无菌化装置1使通过电脉冲施加到电极对13产生的脉冲电场，由氮气气氛中产生的等离子体中产生的细流光放电产生的氮自由基195 和由细流引起的氮气气体发射的短波长紫外线196 排出作用于细菌以对无菌物质ST1进行无菌化处理。

3. 发明授权

US07780923B2 Plasma reaction vessel, and method of producing the same 失效
公开(公告)号：US07780923B2
公开(公告)日：2010-08-24
申请号：US12382099
申请日：2009-03-09
申请人： Yuichiro Imanishi , Shinichi Miwa , Fumio Abe , Yukio Miyairi
发明人： Yuichiro Imanishi , Shinichi Miwa , Fumio Abe , Yukio Miyairi
IPC分类号： B01J19/08
CPC分类号： B01D53/92 , F01N3/0892 , F01N3/2825 , F01N3/2828 , F01N2240/28 , Y10T29/49345
摘要： In the plasma reaction vessel (1) of the invention, two or more laminate-structures (6) having ceramic formed bodies (3, 4) in which a plasma generating electrode (2) capable of generating plasma is formed in two-tape-form, and an electrically continuous film-like electrically conductive electrode (5) held between the two ceramic formed bodies (3, 4) are formed in such a manner as to form a plasma generating space (7) containing mutual laminate planes therein. Of the electrically conductive electrodes (5), adjacent ones are capable of having electric discharge produced therebetween so as to generate the plasma in the plasma generating space (7) and of generating uniform stabilized plasma at low electric power, it being possible to reduce a passage resistance to a gas passing therein.

4. 发明申请

US20090246943A1 APPARATUS FOR MASS-PRODUCING SILICON-BASED THIN FILM AND METHOD FOR MASS-PRODUCING SILICON-BASED THIN FILM 有权
标题翻译：用于生产基于硅的薄膜的设备和用于生产基于硅的薄膜的方法
公开(公告)号：US20090246943A1
公开(公告)日：2009-10-01
申请号：US12411528
申请日：2009-03-26
申请人： Minoru Imaeda , Yuichiro Imanishi , Takao Saito
发明人： Minoru Imaeda , Yuichiro Imanishi , Takao Saito
IPC分类号： H01L21/20 , C23C16/503
CPC分类号： H01J37/32027 , C23C14/566 , C23C16/4401 , C23C16/54 , H01J37/32018 , H01J37/32045 , H01J37/32568
摘要： A silicon-based thin film mass-producing apparatus, including transparent electrodes placed to face in parallel to corresponding counter electrodes with a space therebetween, and silicon-based thin films are deposited on the transparent electrodes by feeding a raw material gas for depositing the silicon-based thin films into the chamber and by applying a DC pulse voltage to the counter electrodes to generate plasma. Unlike methods in which a radio frequency voltage is intermittently applied to perform discharge, a high plasma density distribution does not occur, and in-plane film thickness distribution does not occur. Furthermore, since the DC pulse voltage rises sharply, the ON period can be shortened. As a result, generation of a sheath ceases in the transient state before reaching the steady state, and the thickness of the sheath is small, which allows the space between the counter and transparent electrodes to decrease.
摘要翻译：通过供给用于沉积硅的原料气体，在透明电极上沉积硅基薄膜质量产生装置，其包括与其间具有空间的相应对置电极平行放置的透明电极和硅基薄膜的薄膜进入室，并通过向对电极施加DC脉冲电压以产生等离子体。不同于间歇地施加射频电压以进行放电的方法，不会发生高等离子体密度分布，并且不会发生面内膜厚分布。此外，由于直流脉冲电压急剧上升，因此能够缩短接通时间。结果，在达到稳定状态之前，鞘的产生在瞬态停止，并且护套的厚度小，这允许计数器和透明电极之间的空间减小。

5. 发明申请

US20080245478A1 Surface treatment apparatus 审中-公开
标题翻译：表面处理装置
公开(公告)号：US20080245478A1
公开(公告)日：2008-10-09
申请号：US12081913
申请日：2008-04-23
申请人： Eiki Hotta , Naohiro Shimizu , Yuichiro Imanishi
发明人： Eiki Hotta , Naohiro Shimizu , Yuichiro Imanishi
IPC分类号： C23F1/00 , C23C16/448
CPC分类号： H01J37/32706 , H01J37/32009 , H01J37/3233 , H05H1/2406 , H05H2001/2412
摘要： A surface treatment apparatus encompasses a gas introducing system configured to introduce a process gas from downstream end of a tubular treatment object; a vacuum evacuating system configured to evacuate the process gas from other end of the treatment object; an excited particle supplying system disposed at upstream side of the treatment object, configured to supply excited particles for inducing initial discharge in a main body of the treatment object; and a first main electrode and a second main electrode disposed oppositely to each other, defining a treating region of the treatment object as a main plasma generating region disposed therebetween, wherein the excited particle supplying system is driven at least until generation of main plasma, and main pulse of duty ratio of 10−7 to 10−1 is applied across the first main electrode and second main electrode, to generate a non-thermal equilibrium plasma flow in the inside of the treatment object, and thereby an inner surface of the treatment object is treated.
摘要翻译：表面处理装置包括：气体导入系统，其构造成从管状处理对象的下游端引入处理气体; 真空排气系统，其构造成从处理对象的另一端抽出处理气体; 设置在处理对象的上游侧的激发粒子供给系统，被配置为在被处理体的主体内供给用于引发初始排出的激发粒子; 以及相对设置的第一主电极和第二主电极，将处理对象的处理区域设定为设置在其间的主等离子体产生区域，其中所述激发粒子供给系统至少被驱动至主等离子体的产生，以及在第一主电极和第二主电极上施加10 -7至10 -6的主脉冲占空比，以在第一主电极和第二主电极中产生非热平衡等离子体流在处理对象内部，从而处理对象的内表面。

6. 发明授权

US6072118A Process and apparatus for growing crystalline silicon plates by pulling the plate through a growth member 失效
标题翻译：通过将板拉动通过生长构件来生长晶体硅板的方法和装置
公开(公告)号：US6072118A
公开(公告)日：2000-06-06
申请号：US897945
申请日：1997-07-24
申请人： Tsuguo Fukuda , Minoru Imaeda , Yuichiro Imanishi
发明人： Tsuguo Fukuda , Minoru Imaeda , Yuichiro Imanishi
IPC分类号： C30B29/06 , C30B15/00 , C30B15/08 , C30B15/24 , H01L31/04 , C30B15/34 , H01L21/268
CPC分类号： C30B29/06 , C30B15/08 , C30B15/24
摘要： A process for growing a crystalline silicon plate, including the steps of arranging a planar growth member and a growth crucible in which a melt of silicon is placed and which is provided with a melt draw-out opening at a lower side thereof, while at least a tip portion of the growth member is located under the draw-out opening, drawing out the melt from the crucible through the draw-out opening, bringing the drawn out melt into contact with the tip portion of the growth member, and further pulling down the melt through the tip portion of the growth member.
摘要翻译：一种用于生长结晶硅板的方法，包括以下步骤：设置平面生长构件和其中放置硅熔体的生长坩埚，并且在其下侧设置有熔体引出开口，同时至少生长部件的前端部位于拉出口下方，通过拉出口从坩埚抽出熔融液，使拉出的熔融物与生长部件的前端部接触，进一步向下拉熔融物通过生长部件的尖端部分。

7. 发明授权

US06036775A Single crystal-growing method and apparatus 失效
标题翻译：单晶生长方法和装置
公开(公告)号：US06036775A
公开(公告)日：2000-03-14
申请号：US358066
申请日：1999-07-21
申请人： Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
发明人： Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
IPC分类号： C30B15/00 , C30B15/08 , C30B35/00
CPC分类号： C30B15/08 , C30B15/00 , C30B29/30 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1056 , Y10T117/1064
摘要： A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.
摘要翻译：公开了一种通过向下拉下单晶原料的熔体来连续生产单晶的方法，其中从熔体生长的单晶体被连续地向下拉，并且通过间歇切割连续形成多个单晶产物单晶体向下移动。

8. 发明授权

US08545765B2 Plasma treating apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US08545765B2
公开(公告)日：2013-10-01
申请号：US13450853
申请日：2012-04-19
申请人： Wataru Shionoya , Naohiro Shimizu , Yuichiro Imanishi , Sozaburo Hotta
发明人： Wataru Shionoya , Naohiro Shimizu , Yuichiro Imanishi , Sozaburo Hotta
IPC分类号： B01J19/08
CPC分类号： B01J19/088 , B01J2219/0811 , B01J2219/0813 , B01J2219/0815 , B01J2219/083 , B01J2219/0835 , B01J2219/0841 , B01J2219/0875 , B01J2219/0894 , H05H1/2406 , H05H2001/2412 , H05H2240/10
摘要： A first electrode, a second electrode and a third electrode are provided in a middle of a passage. The second electrode is provided on an upstream side of the first electrode, and the third electrode is provided on a downstream side of the first electrode. A connecting line connects the first electrode to a first pole of a pulsed power supply, and connects the second electrode and the third electrode to a second pole of the pulsed power supply. The first electrode crosses a first gas passing surface and occupies a part of the first gas passing surface. The second electrode and the third electrode cross a second gas passing surface and a third gas passing surface and occupy a part of the second gas passing surface and the third gas passing surface respectively.
摘要翻译：第一电极，第二电极和第三电极设置在通路的中间。第二电极设置在第一电极的上游侧，第三电极设置在第一电极的下游侧。连接线将第一电极连接到脉冲电源的第一极，并将第二电极和第三电极连接到脉冲电源的第二极。第一电极穿过第一气体通过表面并占据第一气体通过表面的一部分。第二电极和第三电极与第二气体通过面和第三气体通过面交叉，分别占据第二气体通过面和第三气体通过面的一部分。

9. 发明申请

US20120199286A1 PLASMA TREATING APPARATUS 失效
标题翻译：等离子体处理装置
公开(公告)号：US20120199286A1
公开(公告)日：2012-08-09
申请号：US13450853
申请日：2012-04-19
申请人： Wataru SHIONOYA , Naohiro SHIMIZU , Yuichiro IMANISHI , Sozaburo HOTTA
发明人： Wataru SHIONOYA , Naohiro SHIMIZU , Yuichiro IMANISHI , Sozaburo HOTTA
IPC分类号： C23F1/08
CPC分类号： B01J19/088 , B01J2219/0811 , B01J2219/0813 , B01J2219/0815 , B01J2219/083 , B01J2219/0835 , B01J2219/0841 , B01J2219/0875 , B01J2219/0894 , H05H1/2406 , H05H2001/2412 , H05H2240/10
摘要： A first electrode, a second electrode and a third electrode are provided in a middle of a passage. The second electrode is provided on an upstream side of the first electrode, and the third electrode is provided on a downstream side of the first electrode. A connecting line connects the first electrode to a first pole of a pulsed power supply, and connects the second electrode and the third electrode to a second pole of the pulsed power supply. The first electrode crosses a first gas passing surface and occupies a part of the first gas passing surface. The second electrode and the third electrode cross a second gas passing surface and a third gas passing surface and occupy a part of the second gas passing surface and the third gas passing surface respectively.
摘要翻译：第一电极，第二电极和第三电极设置在通路的中间。第二电极设置在第一电极的上游侧，第三电极设置在第一电极的下游侧。连接线将第一电极连接到脉冲电源的第一极，并将第二电极和第三电极连接到脉冲电源的第二极。第一电极穿过第一气体通过表面并占据第一气体通过表面的一部分。第二电极和第三电极与第二气体通过面和第三气体通过面交叉，分别占据第二气体通过面和第三气体通过面的一部分。

10. 发明申请

US20090196800A1 Plasma reaction vessel, and method of producing the same 失效
标题翻译：等离子体反应容器及其制造方法
公开(公告)号：US20090196800A1
公开(公告)日：2009-08-06
申请号：US12382099
申请日：2009-03-09
申请人： Yuichiro Imanishi , Shinichi Miwa , Fumio Abe , Yukio Miyairi
发明人： Yuichiro Imanishi , Shinichi Miwa , Fumio Abe , Yukio Miyairi
IPC分类号： B01J19/08
CPC分类号： B01D53/92 , F01N3/0892 , F01N3/2825 , F01N3/2828 , F01N2240/28 , Y10T29/49345
摘要： In the plasma reaction vessel (1) of the invention, two or more laminate-structures (6) having ceramic formed bodies (3, 4) in which a plasma generating electrode (2) capable of generating plasma is formed in two-tape-form, and an electrically continuous film-like electrically conductive electrode (5) held between the two ceramic formed bodies (3, 4) are formed in such a manner as to form a plasma generating space (7) containing mutual laminate planes therein. Of the electrically conductive electrodes (5), adjacent ones are capable of having electric discharge produced therebetween so as to generate the plasma in the plasma generating space (7) and of generating uniform stabilized plasma at low electric power, it being possible to reduce a passage resistance to a gas passing therein.
摘要翻译：在本发明的等离子体反应容器（1）中，具有陶瓷成形体（3,4）的两层以上的层压结构体（6），其中能够产生等离子体的等离子体产生电极（2）形成，并且以这样的方式形成保持在两个陶瓷成形体（3,4）之间的电连续的膜状导电电极（5），以形成其中包含相互层叠平面的等离子体产生空间（7）。在导电电极（5）中，相邻的导电电极（5）能够在其间产生放电，以在等离子体产生空间（7）中产生等离子体并且在低功率下产生均匀稳定的等离子体，可以减少对通过其中的气体的通道阻力。

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