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1. 发明申请

US20060071727A1 Nonvolatile programmable crystal oscillator circuit 有权
标题翻译：非易失性可编程晶体振荡电路
公开(公告)号：US20060071727A1
公开(公告)日：2006-04-06
申请号：US10949176
申请日：2004-09-24
申请人： Aaron Brennan , Mark Lugar , Mike McMenamy
发明人： Aaron Brennan , Mark Lugar , Mike McMenamy
IPC分类号： H03B5/32
CPC分类号： H03B5/366
摘要： According to embodiments of the invention, a nonvolatile memory such as a flash memory is used to configure a single die after packaging of the die has occurred. Thus, numerous applications may be supported by a single die or optimization within a given application may occur. According to embodiments of the invention, the nonvolatile memory may be accessed through a programming interface, and preferably, through a two-pin programming interface, to normalize parameters such as package parasitics, crystal variations, output dividers, output duty cycle, output edge rates, I/O configuration, and oscillator gain. According to an embodiment of the invention, an XO circuit configuration includes a nonvolatile memory and a stand-alone XO, where the XO circuit configuration does not require a PLL to synthesize a reference frequency produced by the XO.
摘要翻译：根据本发明的实施例，诸如闪速存储器之类的非易失性存储器被用于在发生封装模具之后配置单个管芯。因此，许多应用可以由单个管芯支持，或者可以在给定的应用中进行优化。根据本发明的实施例，可以通过编程接口访问非易失性存储器，并且优选地通过双引脚编程接口来对诸如封装寄生效应，晶体变化，输出分频器，输出占空比，输出边沿率，I / O配置和振荡器增益。根据本发明的实施例，XO电路配置包括非易失性存储器和独立XO，其中XO电路配置不需要PLL来合成由XO产生的参考频率。

2. 发明授权

US07221233B2 Nonvolatile programmable crystal oscillator circuit 有权
标题翻译：非易失性可编程晶体振荡电路
公开(公告)号：US07221233B2
公开(公告)日：2007-05-22
申请号：US10949176
申请日：2004-09-24
申请人： Aaron Brennan , Mark Lugar , Mike McMenamy
发明人： Aaron Brennan , Mark Lugar , Mike McMenamy
IPC分类号： H03B5/32
CPC分类号： H03B5/366
摘要： According to embodiments of the invention, a nonvolatile memory such as a flash memory is used to configure a single die after packaging of the die has occurred. Thus, numerous applications may be supported by a single die or optimization within a given application may occur. According to embodiments of the invention, the nonvolatile memory may be accessed through a programming interface, and preferably, through a two-pin programming interface, to normalize parameters such as package parasitics, crystal variations, output dividers, output duty cycle, output edge rates, I/O configuration, and oscillator gain. According to an embodiment of the invention, an XO circuit configuration includes a nonvolatile memory and a stand-alone XO, where the XO circuit configuration does not require a PLL to synthesize a reference frequency produced by the XO.
摘要翻译：根据本发明的实施例，诸如闪速存储器之类的非易失性存储器被用于在发生封装模具之后配置单个管芯。因此，许多应用可以由单个管芯支持，或者可以在给定的应用中进行优化。根据本发明的实施例，可以通过编程接口访问非易失性存储器，并且优选地通过双引脚编程接口来对诸如封装寄生效应，晶体变化，输出分频器，输出占空比，输出边沿率，I / O配置和振荡器增益。根据本发明的实施例，XO电路配置包括非易失性存储器和独立XO，其中XO电路配置不需要PLL来合成由XO产生的参考频率。

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