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    • 3. 发明授权
    • Nonvolatile programmable crystal oscillator circuit
    • 非易失性可编程晶体振荡电路
    • US07221233B2
    • 2007-05-22
    • US10949176
    • 2004-09-24
    • Aaron BrennanMark LugarMike McMenamy
    • Aaron BrennanMark LugarMike McMenamy
    • H03B5/32
    • H03B5/366
    • According to embodiments of the invention, a nonvolatile memory such as a flash memory is used to configure a single die after packaging of the die has occurred. Thus, numerous applications may be supported by a single die or optimization within a given application may occur. According to embodiments of the invention, the nonvolatile memory may be accessed through a programming interface, and preferably, through a two-pin programming interface, to normalize parameters such as package parasitics, crystal variations, output dividers, output duty cycle, output edge rates, I/O configuration, and oscillator gain. According to an embodiment of the invention, an XO circuit configuration includes a nonvolatile memory and a stand-alone XO, where the XO circuit configuration does not require a PLL to synthesize a reference frequency produced by the XO.
    • 根据本发明的实施例,诸如闪速存储器之类的非易失性存储器被用于在发生封装模具之后配置单个管芯。 因此,许多应用可以由单个管芯支持,或者可以在给定的应用中进行优化。 根据本发明的实施例,可以通过编程接口访问非易失性存储器,并且优选地通过双引脚编程接口来对诸如封装寄生效应,晶体变化,输出分频器,输出占空比,输出边沿率 ,I / O配置和振荡器增益。 根据本发明的实施例,XO电路配置包括非易失性存储器和独立XO,其中XO电路配置不需要PLL来合成由XO产生的参考频率。
    • 4. 发明授权
    • Regulated capacitive loading and gain control of a crystal oscillator during startup and steady state operation
    • 在启动和稳态运行期间调节晶体振荡器的电容负载和增益控制
    • US07859355B2
    • 2010-12-28
    • US11277185
    • 2006-03-22
    • Aaron BrennanMike McMenamy
    • Aaron BrennanMike McMenamy
    • H03L5/02
    • H03B5/36H03B5/06H03B5/368H03B2200/0046H03B2200/005H03B2200/0062H03B2200/0094H03L3/00H03L5/00
    • An oscillator circuit and system are provided having a peak detector that can determine a peak voltage value from the oscillator. The peak voltage value can then be compared against a predetermined voltage value by a controller coupled to the peak detector. The comparison value is then used to change a bias signal if the peak voltage value is dissimilar from the predetermined voltage value. A variable capacitor or varactor can be formed from a transistor and is coupled to the oscillator for receiving the bias signal upon a varactor bias node. The bias signal is used to regulate the capacitance within the varactor as applied to the oscillator nodes. Another controller can also be coupled to the peak detector to produce a second bias signal if the peak voltage is dissimilar from a second predetermined voltage value. The second bias signal can then be forwarded into an amplifier having a variable gain to regulate the gain applied to the oscillator. The combination of a varactor and variable gain amplifier regulate the negative resistance applied to the resonating circuit during startup and steady state operations to ensure a relatively fast startup, and to maintain optimal loading and accurate steady state amplitude after startup has completed.
    • 提供具有能够确定振荡器的峰值电压值的峰值检测器的振荡器电路和系统。 然后可以通过耦合到峰值检测器的控制器将峰值电压值与预定电压值进行比较。 如果峰值电压值与预定电压值不相似,则比较值用于改变偏置信号。 可变电容器或变容二极管可以由晶体管形成,并且耦合到振荡器以在变容二极管偏置节点上接收偏置信号。 偏置信号用于调节应用于振荡器节点的变容二极管内的电容。 如果峰值电压与第二预定电压值不相似,另一个控制器也可耦合到峰值检测器以产生第二偏置信号。 然后可以将第二偏置信号转发到具有可变增益的放大器中,以调节施加到振荡器的增益。 变容二极管和可变增益放大器的组合调节在启动和稳态操作期间施加到谐振电路的负电阻,以确保启动相对较快,并且在启动完成后保持最佳负载和精确的稳态幅度。
    • 6. 发明授权
    • Regulated, symmetrical crystal oscillator circuit and method
    • 调节对称晶体振荡电路及方法
    • US07123113B1
    • 2006-10-17
    • US10866510
    • 2004-06-11
    • Aaron BrennanJonathon StiffMike McMenamy
    • Aaron BrennanJonathon StiffMike McMenamy
    • H03B5/36H03B1/00H03L1/00H03L5/00
    • H03L5/00H03B5/04H03B5/36H03B2200/0012
    • An oscillator circuit is provided that is preferably a crystal oscillator, where voltage placed across the crystal is regulated. The regulated voltage or amplitude of the cyclical signal across the crystal is monitored and maintained through a regulation circuit that measures a peak voltage across the crystal. Once the peak voltage exceeds a predetermined setpoint value, then a controller within the regulation circuit will reduce a biasing current through an amplifying transistor within the amplifier coupled across the crystal input and output nodes. By regulating the biasing current, gain from the amplifier is also regulated so that unwanted non-linearities and harmonic distortion is not induced within the crystal to cause frequency distortion and unwanted modes of oscillation within the crystal. The amplifier is preferably symmetrical in that the amplifier sources and sinks equal current to reduce unwanted peaks at the negative or positive half cycles of the sinusoidal signal.
    • 提供了一种振荡器电路,其优选是晶体振荡器,其中调节晶体两端的电压。 晶体周期信号的调节电压或幅度通过调节电路进行监测和维持,该电路测量晶体两端的峰值电压。 一旦峰值电压超过预定的设定值,则调节电路内的控制器将减小通过晶体输入和输出节点耦合的放大器内的放大晶体管的偏置电流。 通过调节偏置电流,放大器的增益也被调节,使得在晶体内不会引起不需要的非线性和谐波失真,从而导致晶体内的频率失真和不期望的振荡模式。 放大器优选对称,因为放大器源和吸收器相等电流以减少在正弦信号的负半周期或正半周期的不期望的峰值。
    • 9. 发明申请
    • Regulated Capacitive Loading and Gain Control of a Crystal Oscillator During Startup and Steady State Operation
    • 启动稳定运行期间晶体振荡器的调节电容负载和增益控制
    • US20070030085A1
    • 2007-02-08
    • US11277185
    • 2006-03-22
    • Aaron BrennanMike McMenamy
    • Aaron BrennanMike McMenamy
    • H03B5/12H03C3/22H03B5/18
    • H03B5/36H03B5/06H03B5/368H03B2200/0046H03B2200/005H03B2200/0062H03B2200/0094H03L3/00H03L5/00
    • An oscillator circuit and system are provided having a peak detector that can determine a peak voltage value from the oscillator. The peak voltage value can then be compared against a predetermined voltage value by a controller coupled to the peak detector. The comparison value is then used to change a bias signal if the peak voltage value is dissimilar from the predetermined voltage value. A variable capacitor or varactor can be formed from a transistor and is coupled to the oscillator for receiving the bias signal upon a varactor bias node. The bias signal is used to regulate the capacitance within the varactor as applied to the oscillator nodes. Another controller can also be coupled to the peak detector to produce a second bias signal if the peak voltage is dissimilar from a second predetermined voltage value. The second bias signal can then be forwarded into an amplifier having a variable gain to regulate the gain applied to the oscillator. The combination of a varactor and variable gain amplifier regulate the negative resistance applied to the resonating circuit during startup and steady state operations to ensure a relatively fast startup, and to maintain optimal loading and accurate steady state amplitude after startup has completed.
    • 提供具有能够确定振荡器的峰值电压值的峰值检测器的振荡器电路和系统。 然后可以通过耦合到峰值检测器的控制器将峰值电压值与预定电压值进行比较。 如果峰值电压值与预定电压值不相似,则比较值用于改变偏置信号。 可变电容器或变容二极管可以由晶体管形成,并且耦合到振荡器以在变容二极管偏置节点上接收偏置信号。 偏置信号用于调节应用于振荡器节点的变容二极管内的电容。 如果峰值电压与第二预定电压值不相似,另一个控制器也可耦合到峰值检测器以产生第二偏置信号。 然后可以将第二偏置信号转发到具有可变增益的放大器中,以调节施加到振荡器的增益。 变容二极管和可变增益放大器的组合调节在启动和稳态操作期间施加到谐振电路的负电阻,以确保启动相对较快,并且在启动完成后保持最佳负载和精确的稳态幅度。
    • 10. 发明申请
    • Nonvolatile programmable crystal oscillator circuit
    • 非易失性可编程晶体振荡电路
    • US20060071727A1
    • 2006-04-06
    • US10949176
    • 2004-09-24
    • Aaron BrennanMark LugarMike McMenamy
    • Aaron BrennanMark LugarMike McMenamy
    • H03B5/32
    • H03B5/366
    • According to embodiments of the invention, a nonvolatile memory such as a flash memory is used to configure a single die after packaging of the die has occurred. Thus, numerous applications may be supported by a single die or optimization within a given application may occur. According to embodiments of the invention, the nonvolatile memory may be accessed through a programming interface, and preferably, through a two-pin programming interface, to normalize parameters such as package parasitics, crystal variations, output dividers, output duty cycle, output edge rates, I/O configuration, and oscillator gain. According to an embodiment of the invention, an XO circuit configuration includes a nonvolatile memory and a stand-alone XO, where the XO circuit configuration does not require a PLL to synthesize a reference frequency produced by the XO.
    • 根据本发明的实施例,诸如闪速存储器之类的非易失性存储器被用于在发生封装模具之后配置单个管芯。 因此,许多应用可以由单个管芯支持,或者可以在给定的应用中进行优化。 根据本发明的实施例,可以通过编程接口访问非易失性存储器,并且优选地通过双引脚编程接口来对诸如封装寄生效应,晶体变化,输出分频器,输出占空比,输出边沿率 ,I / O配置和振荡器增益。 根据本发明的实施例,XO电路配置包括非易失性存储器和独立XO,其中XO电路配置不需要PLL来合成由XO产生的参考频率。