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1. 发明授权

US08909021B2 Semiconductor optical device 有权
标题翻译：半导体光学器件
公开(公告)号：US08909021B2
公开(公告)日：2014-12-09
申请号：US13521605
申请日：2010-02-01
申请人： Shinichi Saito , Masahiro Aoki , Toshiki Sugawara
发明人： Shinichi Saito , Masahiro Aoki , Toshiki Sugawara
IPC分类号： G02B6/00 , G02B6/36 , H01S5/30 , G02F1/225 , H01S5/02 , G02B6/122 , B82Y20/00 , G02B6/12 , G02F1/21 , H01S5/042 , H01S5/32 , H01S5/12
CPC分类号： G02B6/122 , B82Y20/00 , G02B2006/12097 , G02B2006/12178 , G02F1/218 , G02F1/2257 , G02F2001/212 , G02F2201/12 , G02F2202/06 , G02F2202/09 , G02F2202/105 , G02F2203/06 , H01S5/021 , H01S5/0424 , H01S5/12 , H01S5/3027 , H01S5/3202
摘要： Disclosed is a silicon optical waveguide having a small optical loss and no polarization dependency. The silicon optical waveguide is formed on a silicon substrate with an embedded oxide film therebetween, the plane orientation of the surface of the silicon optical waveguide is the (110) plane, the plane orientation of the side wall is the (111) plane, and the recesses and projections of the side wall are planarized at an atomic level.
摘要翻译：公开了具有小光损耗并且没有偏振依赖性的硅光波导。硅光波导形成在其上具有埋入氧化膜的硅衬底上，硅光波导表面的平面取向为（110）面，侧壁的面取向为（111）面，侧壁的凹部和突起在原子级平坦化。

2. 发明授权

US08422350B2 Information processor device and storage medium 有权
标题翻译：信息处理器设备和存储介质
公开(公告)号：US08422350B2
公开(公告)日：2013-04-16
申请号：US13126326
申请日：2009-10-16
申请人： Takao Watanabe , Yasunari Obuchi , Masahiro Aoki
发明人： Takao Watanabe , Yasunari Obuchi , Masahiro Aoki
IPC分类号： G11B7/00
CPC分类号： G11B20/10 , G11B2007/0009 , G11B2220/235
摘要： In an information storage device in which small partitions for storing information are three-dimensionally placed inside a solid, the invention aims at long-period storage, robustness, and rapid information reading. Accordingly, the stored three-dimensional information is divided into two-dimensional data for each layer, and two-dimensional inverse Fourier transform is previously applied for the two-dimensional data. The two-dimensional data is recorded in each layer in a Z direction inside a storage medium which is solid. When the information is reproduced, electromagnetic waves are irradiated to a storage area MA as gradually rotating the storage area MA around a z axis, and projection images of all layers during the rotation are obtained from response. By applying one-dimensional Fourier transform for a plurality of projection images obtained as described above, the recorded original three-dimensional information is rapidly reproduced.
摘要翻译：本发明的一个信息存储装置，其中用于存储信息的小分区被三维地放置在一个实体内，本发明的目的在于长时间的存储，鲁棒性和快速的信息读取。因此，将所存储的三维信息划分为每层的二维数据，并且预先对二维数据应用二维傅里叶逆变换。将二维数据记录在固体存储介质内的Z方向的各层中。当信息被再现时，电磁波被照射到存储区域MA，使得存储区域MA围绕z轴逐渐旋转，并且从响应中获得旋转期间所有层的投影图像。通过对如上所述获得的多个投影图像应用一维傅里叶变换，快速地再现所记录的原始三维信息。

3. 发明申请

US20120327965A1 SEMICONDUCTOR LASER ELEMENT, METHOD OF MANUFACTURING SEMICONDUCTOR LASER ELEMENT, AND OPTICAL MODULE 审中-公开
标题翻译：半导体激光元件，制造半导体激光元件的方法和光学模块
公开(公告)号：US20120327965A1
公开(公告)日：2012-12-27
申请号：US13521555
申请日：2010-02-02
申请人： Kazunori Shinoda , Koichiro Adachi , Shinji Tsuji , Masahiro Aoki
发明人： Kazunori Shinoda , Koichiro Adachi , Shinji Tsuji , Masahiro Aoki
IPC分类号： H01S5/028 , H01S5/024 , H01L21/02
CPC分类号： H01S5/125 , H01S5/0265 , H01S5/0267 , H01S5/187 , H01S5/2081
摘要： In order to provide a semiconductor laser element or an integrated optical device with high reliability, a horizontal-cavity semiconductor laser or an optical module includes a deeply dug DBR mirror serving as a cavity mirror, the deeply dug DBR mirror being composed of a material that is lattice-matched to a substrate and that has a band gap energy that does not absorb light emitted from an active layer.
摘要翻译：为了提供具有高可靠性的半导体激光元件或集成光学器件，水平腔半导体激光器或光学模块包括用作腔镜的深钻DBR镜，深冲DBR镜由以下材料组成的材料组成：与衬底晶格匹配，并且具有不吸收从有源层发射的光的带隙能量。

4. 发明申请

US20120094190A1 ASYMMETRIC AND/OR LOW-SYMMETRIC FLUORINE-CONTAINING PHOSPHATE FOR NON-AQUEOUS ELECTROLYTE SOLUTION 审中-公开
标题翻译：不对称和/或低对称含氟磷酸盐用于非水溶性电解质溶液
公开(公告)号：US20120094190A1
公开(公告)日：2012-04-19
申请号：US13380658
申请日：2010-07-30
申请人： Hideyuki Mimura , Kentaro Kono , Hisao Eguchi , Kotaro Sakoda , Masahiro Aoki
发明人： Hideyuki Mimura , Kentaro Kono , Hisao Eguchi , Kotaro Sakoda , Masahiro Aoki
IPC分类号： H01M10/056 , C07F9/141
CPC分类号： H01M10/0569 , H01M10/052 , H01M10/0525 , H01M10/4235 , Y02T10/7011
摘要： As to a fluorine-containing phosphate used to impart flame retardancy to an electrolyte solution for a non-aqueous secondary battery, a fluorine-containing phosphate having high flame retardancy and providing high battery performance such as high-rate charge-discharge characteristics, and a method for manufacturing the same are provided. Also provided are a non-aqueous electrolyte solution and a non-aqueous secondary battery each containing the fluorine-containing phosphate.Further a fluorine-containing phosphate having a high ability to dissolve an electrolyte and capable of providing the composition of a safer electrolyte solution is provided.The fluorine-containing phosphate for a non-aqueous electrolyte solution is represented by the general formula (1) (wherein R represents an alkyl group having 1 to 10 carbon atoms or a fluorine-containing alkyl group having 1 to 10 carbon atoms, A and B are different from each other and each represent a hydrogen atom or a fluorine atom, and n and m each independently represent an integer from 1 to 8) and contains fluorine atoms in a weight ratio of 30% or higher.
摘要翻译：对于用于赋予非水二次电池用电解液阻燃性的含氟磷酸盐，具有高阻燃性且具有高电压特性的含氟磷酸盐，例如高倍率充放电特性，以及提供了制造该方法的方法。还提供了含有含氟磷酸盐的非水电解液和非水二次电池。此外，还提供了一种具有高溶解电解质并且能够提供更安全的电解质溶液组成的能力的含氟磷酸盐。用于非水电解质溶液的含氟磷酸酯由通式（1）表示（其中R表示碳原子数为1〜10的烷基或碳原子数1〜10的含氟烷基，A和 B彼此不同，各自表示氢原子或氟原子，n和m各自独立地表示1〜8的整数），并且含有30重量％以上的氟原子。

5. 发明申请

US20110211436A1 Information Processor Device and Storage Medium 有权
标题翻译：信息处理器设备和存储介质
公开(公告)号：US20110211436A1
公开(公告)日：2011-09-01
申请号：US13126326
申请日：2009-10-16
申请人： Takao Watanabe , Yasunari Obuchi , Masahiro Aoki
发明人： Takao Watanabe , Yasunari Obuchi , Masahiro Aoki
IPC分类号： G11B7/00
CPC分类号： G11B20/10 , G11B2007/0009 , G11B2220/235
摘要： In an information storage device in which small partitions for storing information are three-dimensionally placed inside a solid, the invention aims at long-period storage, robustness, and rapid information reading. Accordingly, the stored three-dimensional information is divided into two-dimensional data for each layer, and two-dimensional inverse Fourier transform is previously applied for the two-dimensional data. The two-dimensional data is recorded in each layer in a Z direction inside a storage medium which is solid. When the information is reproduced, electromagnetic waves are irradiated to a storage area MA as gradually rotating the storage area MA around a z axis, and projection images of all layers during the rotation are obtained from response. By applying one-dimensional Fourier transform for a plurality of projection images obtained as described above, the recorded original three-dimensional information is rapidly reproduced.
摘要翻译：本发明的一个信息存储装置，其中用于存储信息的小分区被三维地放置在一个实体内，本发明的目的在于长时间的存储，鲁棒性和快速的信息读取。因此，将所存储的三维信息划分为每层的二维数据，并且预先对二维数据应用二维傅里叶逆变换。将二维数据记录在固体存储介质内的Z方向的各层中。当信息被再现时，电磁波被照射到存储区域MA，使得存储区域MA围绕z轴逐渐旋转，并且从响应中获得旋转期间所有层的投影图像。通过对如上所述获得的多个投影图像应用一维傅里叶变换，快速地再现所记录的原始三维信息。

6. 发明授权

US07776918B2 Remedy for viral disease 有权
标题翻译：补救病毒性疾病
公开(公告)号：US07776918B2
公开(公告)日：2010-08-17
申请号：US10544896
申请日：2004-02-12
申请人： Masahiro Aoki , Hideyuki Kato , Masayuki Sudoh , Takuo Tsukuda , Miyako Masubuchi , Kenichi Kawasaki
发明人： Masahiro Aoki , Hideyuki Kato , Masayuki Sudoh , Takuo Tsukuda , Miyako Masubuchi , Kenichi Kawasaki
IPC分类号： A01N37/12 , A01N43/38
CPC分类号： A61K31/405 , A61K31/195 , A61K31/216 , C07C235/76
摘要： The object of the present invention is to provide a pharmaceutical composition for preventing or treating viral infectious diseases. The compounds of the present invention have extremely potent anti-HCV activity and HCV growth inhibitory effects, and since they also only demonstrate mild cytotoxicity in vivo, a pharmaceutical composition containing the compound of the present invention is extremely useful as an anti-HCV preventive/therapeutic agent.
摘要翻译：本发明的目的是提供一种用于预防或治疗病毒性传染病的药物组合物。本发明的化合物具有非常有效的抗HCV活性和HCV生长抑制作用，并且由于它们在体内也仅表现出轻度的细胞毒性，因此含有本发明化合物的药物组合物作为抗HCV预防/ 治疗剂。

7. 发明授权

US07760782B2 Distributed bragg reflector type directly modulated laser and distributed feed back type directly modulated laser 有权
标题翻译：分布式布拉格反射型直接调制激光和分布式反馈式直接调制激光
公开(公告)号：US07760782B2
公开(公告)日：2010-07-20
申请号：US11473011
申请日：2006-06-23
申请人： Masahiro Aoki
发明人： Masahiro Aoki
IPC分类号： H01S5/00
CPC分类号： H01S5/125 , H01S5/0428 , H01S5/32391
摘要： The invention aims at realizing a 1300-nm-band direct modulation laser, having a single lateral mode, in which a chip light power of several milliwatts and a low current operation are simultaneously realized. Also, the invention aims at realizing a laser light source excellent in economy as well by realizing output characteristics of a vertical cavity surface light emitting laser. A distributed Bragg reflector laser is constructed in the form of a semiconductor laser having a multilayer structure formed on a predetermined semiconductor substrate. The multilayer structure includes an active region for emitting a laser beam, and a distributed Bragg reflector layer. A length of the active region falls within the range of 10 to 100 μm, and a laser light beam is generated in accordance with ON/OFF of current injection to the active region.
摘要翻译：本发明旨在实现具有单一横向模式的1300nm波段直接调制激光器，其中同时实现几毫瓦的芯片光功率和低电流操作。另外，本发明的目的在于实现经济性优异的激光光源，实现了垂直腔面发光激光器的输出特性。分布式布喇格反射激光器以形成在预定半导体衬底上的多层结构的半导体激光器的形式构成。多层结构包括用于发射激光束的有源区域和分布式布拉格反射器层。有源区的长度在10〜100μm的范围内，并且根据电流注入的ON / OFF产生激光束到有源区。

8. 发明申请

US20080285974A1 Optical Multiplexer/Demultiplexer 审中-公开
标题翻译：光复用器/解复用器
公开(公告)号：US20080285974A1
公开(公告)日：2008-11-20
申请号：US12120680
申请日：2008-05-15
申请人： Makoto Takahashi , Yasunobu Matsuoka , Masahiro Aoki
发明人： Makoto Takahashi , Yasunobu Matsuoka , Masahiro Aoki
IPC分类号： H04J14/02
CPC分类号： G02B6/29365 , G02B6/29367 , G02B6/2938 , G02B6/42 , G02B6/4246
摘要： An optical multiplexer/demultiplexer comprising a member, of which first and second opposite planar surfaces are parallel to each other. The member includes therein a void, of which third and fourth opposite planar surfaces are in parallel to each other. An extension of a first line lying on the first planar surface and an extension of a third line lying on the third planar surface intersect each other in a cross section including the void of the member, a smaller one of intersection angles thereof being φ1. An extension of a second line lying on the second planar surface and an extension of a fourth line lying on the fourth planar surface intersect each other, a smaller one of intersection angles thereof being φ1. The third planar surface is provided on a part thereof with at least one high reflection coating film. The fourth planar surface is provided on a part thereof with at least one optical wavelength filter. At least parts of the high reflection coating film and the first optical wavelength filter are opposed to each other. The first optical wavelength filter transmits therethrough light of wavelength λ1 and reflects light of wavelength λ2 (here, wavelength λ1≠wavelength λ2). The member and an interior of the void are different in value of refractive index from each other.
摘要翻译：一种光信号多路复用器/解复用器，包括一第一和第二相对平面彼此平行的部件。该构件包括其中第三和第四相对平面彼此平行的空隙。位于第一平坦表面上的第一线的延伸部和位于第三平坦表面上的第三线的延伸线在包括构件的空隙的横截面中彼此相交，较小的一个相交角为φ1。位于第二平坦表面上的第二线的延伸部和位于第四平坦表面上的第四线的延伸部彼此相交，较小的一个相交角为φ1。第三平面设置在其一部分上与至少一个高反射涂膜。第四平面在其一部分上设置有至少一个光波长滤波器。高反射涂膜和第一光波长滤光片的至少一部分彼此相对。第一光学波长滤波器透过波长为λ1的光并且反射波长λ2的光（这里，波长λ1 <>波长λ2）。空隙的构件和内部的折射率值彼此不同。

9. 发明申请

US20080069493A1 INTEGRATED OPTOELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：集成光电装置及其制造方法
公开(公告)号：US20080069493A1
公开(公告)日：2008-03-20
申请号：US11701467
申请日：2007-02-02
申请人： Kazunori Shinoda , Takashi Shiota , Tomonobu Tsuchiya , Takeshi Kitatani , Masahiro Aoki
发明人： Kazunori Shinoda , Takashi Shiota , Tomonobu Tsuchiya , Takeshi Kitatani , Masahiro Aoki
IPC分类号： G02B6/12 , H01L21/00
CPC分类号： G02B6/12004 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , H01S5/0265
摘要： An integrated optoelectronic device includes optical waveguide elements containing InGaAlAs as a principal component, formed on an InP substrate and connected in an end-to-end fashion by butt jointing. AnInGaAs Player is formed on the InP substrate to suppress the mass transport of InP during the fabrication of the integrated optoelectronic device. The InGaAsP layer is formed before the InP substrate is heated at a crystal growth temperature on the order of 700° C. to form the InGaAlAs optical waveguide element.
摘要翻译：集成光电子器件包括含有InGaAlAs作为主要成分的光波导元件，其形成在InP衬底上并且通过对接连接以端对端的方式连接。在InP衬底上形成AnInGaAs Player，以在集成光电子器件的制造期间抑制InP的质量传输。在InP衬底在约700℃的晶体生长温度下加热之前形成InGaAsP层以形成InGaAlAs光波导元件。

10. 发明申请

US20070014212A1 Light receiving element circuit and optical disk drive 失效
标题翻译：光接收元件电路和光盘驱动器
公开(公告)号：US20070014212A1
公开(公告)日：2007-01-18
申请号：US11485221
申请日：2006-07-12
申请人： Masahiro Aoki , Yasushi Higashiyama , Masashi Ueno
发明人： Masahiro Aoki , Yasushi Higashiyama , Masashi Ueno
IPC分类号： G11B7/00
CPC分类号： G11B7/13 , G11B7/0901 , G11B7/0906 , G11B7/094 , G11B7/1275 , G11B2007/0006
摘要： According to one embodiment, a plurality of light receiving elements photoelectrically convert light signals having information signals, respectively. A plurality of first amplification circuits amplify currents of electric signals from the respective light receiving elements. A selecting section selectively outputs one of signals amplified by the plurality of first amplification circuits. A second amplification circuit amplifies a voltage of the signal output from the selecting section, and supplies the signal to the outside.
摘要翻译：根据一个实施例，多个光接收元件分别对具有信息信号的光信号进行光电转换。多个第一放大电路放大来自各个光接收元件的电信号的电流。选择部分选择性地输出由多个第一放大电路放大的信号之一。第二放大电路放大从选择部分输出的信号的电压，并将信号提供给外部。

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