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1. 发明申请

US20090032896A1 OPTICAL SEMICONDUCTOR DEVICE 失效
标题翻译：光学半导体器件
公开(公告)号：US20090032896A1
公开(公告)日：2009-02-05
申请号：US12173429
申请日：2008-07-15
申请人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai
发明人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai
IPC分类号： H01L31/11
CPC分类号： H01L31/1105 , G11B7/13
摘要： An optical semiconductor device includes a phototransistor for receiving incident light. The phototransistor includes a collector layer of a first conductivity type formed on a semiconductor substrate, a base layer of a second conductivity type formed on the collector layer, and an emitter layer of a first conductivity type formed on the base layer. A thickness of the emitter layer is equal to or less than an absorption length of the incident light in the semiconductor substrate.
摘要翻译：光学半导体器件包括用于接收入射光的光电晶体管。光电晶体管包括形成在半导体衬底上的第一导电类型的集电极层，形成在集电极层上的第二导电类型的基极层和形成在基极层上的第一导电类型的发射极层。发射极层的厚度等于或小于半导体衬底中的入射光的吸收长度。

2. 发明授权

US07476839B2 Amplifier circuit for optical disk drive 有权
标题翻译：用于光盘驱动器的放大器电路
公开(公告)号：US07476839B2
公开(公告)日：2009-01-13
申请号：US10983737
申请日：2004-11-09
申请人： Hiroshi Yamaguchi , Masaki Taniguchi
发明人： Hiroshi Yamaguchi , Masaki Taniguchi
IPC分类号： H03F3/06 , H03F3/45 , H03G3/00 , G11B11/00
CPC分类号： H03F3/08 , H03F3/45085 , H03F2203/45466 , H03G3/3084
摘要： An operational amplifier including a pair of differential input transistors is provided with a feedback resistor switching circuit and a variable current source. When a loaded optical disk is a DVD-ROM, the feedback resistor switching circuit reduces a gain of the operational amplifier and the variable current source selects a large current (of, for example, 1 mA) as a common bias current supplied to the differential input transistors. When the loaded optical disk is a DVD-RAM with low reflectance and low recording/reproducing speed, the feedback resistor switching circuit enhances the gain of the operational amplifier and the variable current source selects a small current (of, for example, 0.5 mA) as the common bias current.
摘要翻译：包括一对差分输入晶体管的运算放大器设置有反馈电阻器切换电路和可变电流源。当加载的光盘是DVD-ROM时，反馈电阻器开关电路降低运算放大器的增益，并且可变电流源选择大电流（例如，1mA）作为提供给差分器的公共偏置电流输入晶体管。当装载的光盘是具有低反射率和低记录/再现速度的DVD-RAM时，反馈电阻器切换电路增强了运算放大器的增益，并且可变电流源选择小电流（例如，0.5mA）作为常见的偏置电流。

3. 发明申请

US20080179501A1 Output impedance varying circuit 有权
公开(公告)号：US20080179501A1
公开(公告)日：2008-07-31
申请号：US12076788
申请日：2008-03-24
申请人： Hiroshi Yamaguchi , Masaki Taniguchi
发明人： Hiroshi Yamaguchi , Masaki Taniguchi
IPC分类号： G01J1/44
CPC分类号： H03F3/3069 , H03F1/08 , H03F1/56 , H03F3/08 , H03F3/087 , H03F3/343
摘要： A photo detector IC (PDIC) is connected with a flexible printed circuit board (FPC). A signal converted into a voltage through light-to-voltage conversion in the PDIC is connected with the drain of a field effect transistor (FET), while the source of the FET is connected to an output terminal. A signal from the output terminal is input into a signal processing board of the main body via the FPC serving as an equivalent circuit composed of a coil and a capacitor. The gate of the FET is connected with a variable voltage source. Peaking occurs due to inductor components and capacitance components of the FPC. However, by application of voltage to the variable voltage source, the gate voltage value of the FET is adjusted to be an optimal value, whereby the peaking is suppressed by the on-resistance of the FET.

4. 发明申请

US20080176421A1 Connecting parts and multilayer wiring board 失效
标题翻译：连接件和多层接线板
公开(公告)号：US20080176421A1
公开(公告)日：2008-07-24
申请号：US11882028
申请日：2007-07-30
申请人： Kazuaki Suzuki , Masaki Taniguchi
发明人： Kazuaki Suzuki , Masaki Taniguchi
IPC分类号： H01R12/22
CPC分类号： H05K3/368 , H01R12/52 , H01R13/2414 , H05K1/186 , H05K3/325 , H05K3/4611 , H05K2201/0314 , H05K2201/0367 , H05K2201/10636 , H05K2201/10977 , Y02P70/611
摘要： A connecting part for ensuring a secure connection includes first connecting terminals that are arranged on one face of a supporting member and second connecting terminals that are arranged on the back face of the supporting member. The supporting member may have an elastic body. The connecting terminals are interconnected by conductive films which are formed on the face of the supporting member. Connecting parts are arranged between circuit boards on which electronic parts are mounted, and the circuit boards are mutually fixed in the state in which the connecting parts are compressed. The first and second connecting terminals are pushed against lands on the circuit boards by restoring force of the connecting parts, and then the circuit boards are electrically interconnected.
摘要翻译：用于确保安全连接的连接部分包括布置在支撑构件的一个面上的第一连接端子和布置在支撑构件的背面上的第二连接端子。支撑构件可以具有弹性体。连接端子由形成在支撑构件的表面上的导电膜互连。连接部件布置在其上安装电子部件的电路板之间，并且电路板在连接部件被压缩的状态下相互固定。第一和第二连接端子通过连接部件的恢复力而被推靠在电路板上的平台上，然后电路板电互连。

5. 发明授权

US07391265B2 Amplifier unit and optical disc drive 失效
标题翻译：放大器单元和光盘驱动器
公开(公告)号：US07391265B2
公开(公告)日：2008-06-24
申请号：US11430241
申请日：2006-05-09
申请人： Shinichi Miyamoto , Yousuke Kuroiwa , Masaya Ueda , Hideo Fukuda , Hiroshi Yamaguchi , Masaki Taniguchi
发明人： Shinichi Miyamoto , Yousuke Kuroiwa , Masaya Ueda , Hideo Fukuda , Hiroshi Yamaguchi , Masaki Taniguchi
IPC分类号： H03F3/45 , H03F3/08
CPC分类号： H03F3/3432 , H03F3/08 , H03F2200/78
摘要： An amplifier unit is provided, with which the need for manufacturing a photoelectric conversion IC in Bi-CMOS process is eliminated, and relatively low process cost of the photoelectric conversion IC is achieved. The input section of a buffer (the base of a transistor Q5) is connected with a plurality of patterns of phase compensation circuits each including a resistor and a capacitor connected in series. A bipolar transistor (Q6) is interposed between a positive power supply line and a capacitor (C2) forming a capacitance of the phase compensation circuit. By switching on/off the bipolar transistor (Q6), the capacitance value and resistance value of the phase compensation circuit are switched. Since the bipolar transistor (Q6) is interposed between the capacitor (C2) and the positive power supply line, base current (Isw) acting as a switch signal does not affect the amplifier unit.
摘要翻译：提供放大器单元，消除了在Bi-CMOS工艺中制造光电转换IC的需要，并且实现了光电转换IC的相对低的处理成本。缓冲器（晶体管Q 5的基极）的输入部分与多个相位补偿电路相连，每个相位补偿电路均包括串联连接的电阻器和电容器。在正电源线和形成相位补偿电路的电容的电容器（C 2）之间插入双极晶体管（Q6）。通过接通/关断双极晶体管（Q 6），相位补偿电路的电容值和电阻值被切换。由于双极晶体管（Q 6）插在电容器（C 2）和正电源线之间，所以作为开关信号的基极电流（Isw）不影响放大器单元。

6. 发明申请

US20070252602A1 TEST CIRCUIT AND TEST METHOD 失效
标题翻译：测试电路和测试方法
公开(公告)号：US20070252602A1
公开(公告)日：2007-11-01
申请号：US11677077
申请日：2007-02-21
申请人： Yousuke KUROIWA , Hideo FUKUDA , Hiroshi YAMAGUCHI , Tetsuo CHATO , Yuzo SHIMIZU , Masaki TANIGUCHI
发明人： Yousuke KUROIWA , Hideo FUKUDA , Hiroshi YAMAGUCHI , Tetsuo CHATO , Yuzo SHIMIZU , Masaki TANIGUCHI
IPC分类号： G01R23/02
CPC分类号： H03F3/087 , G01R31/025 , H03F3/45475 , H03F2200/252 , H03F2203/45564
摘要： The test circuit according to the present invention includes: a plurality of light-receiving elements; a plurality of amplifiers, each of which converts, into a voltage, a photoelectric current supplied from one of the light-receiving elements; and an electric current supplying unit which supplies an electric current to each of the light-receiving elements and each of the amplifiers. In this test circuit, the electric current supplying unit selectively supplies an electric current to a first group of light-receiving elements and to a second group of light-receiving elements, the first group of light-receiving elements including light-receiving elements, out of the plurality of light-receiving elements, which are neither vertically nor horizontally adjacent to each other, and the second group of light-receiving elements including light-receiving elements, out of is the plurality of light-receiving elements, which are vertically or horizontally adjacent to the light-receiving elements of the first group of light-receiving elements.
摘要翻译：根据本发明的测试电路包括：多个光接收元件; 多个放大器，每个放大器将从一个光接收元件提供的光电流转换成电压; 以及电流供应单元，其向每个光接收元件和每个放大器提供电流。在该测试电路中，电流供给单元选择性地将电流提供给第一组光接收元件和第二组光接收元件，第一组光接收元件包括光接收元件多个光接收元件彼此不垂直或水平相邻，并且包括光接收元件的第二组光接收元件是多个光接收元件，多个光接收元件是垂直或水平地邻近第一组光接收元件的光接收元件。

7. 发明授权

US06924540B2 Integrated circuit device installed structure and installation method 有权
标题翻译：集成电路装置安装结构及安装方法
公开(公告)号：US06924540B2
公开(公告)日：2005-08-02
申请号：US10388617
申请日：2003-03-17
申请人： Yasufumi Shirakawa , Masaki Taniguchi , Hideo Fukuda , Yuzo Shimizu , Shinya Esaki
发明人： Yasufumi Shirakawa , Masaki Taniguchi , Hideo Fukuda , Yuzo Shimizu , Shinya Esaki
IPC分类号： G11B7/13 , G11B7/24 , H01L21/50 , H01L21/56 , H01L23/02 , H01L23/28 , H01L23/50 , H01L27/14 , H01L31/02 , H01L31/0203 , H01L47/00
CPC分类号： G11B7/13 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2924/1815 , H01L2924/00014 , H01L2924/00012
摘要： A packaging structure suitable for an integrated circuit device receiving short-wavelength laser light is provided. The integrated circuit device having a photo detecting part, leads and wires for connection therebetween are encapsulated in an encapsulation section. A recess is formed on the light incident surface of the encapsulation section above the photo detecting part, to thin the encapsulation section on the surface of the photo detecting part and thereby reduce the energy of light absorbed by the encapsulation section.
摘要翻译：提供了适用于接收短波长激光的集成电路器件的封装结构。具有光检测部分的集成电路器件，引线和用于连接的引线被封装在封装部分中。在光检测部分上方的封装部分的光入射表面上形成凹部，以使光检测部分的表面上的封装部分变薄，从而降低由封装部分吸收的光的能量。

8. 发明申请

US20050151217A1 Integrated circuit device packaging structure and packaging method 有权
标题翻译：集成电路器件封装结构及封装方法
公开(公告)号：US20050151217A1
公开(公告)日：2005-07-14
申请号：US11073724
申请日：2005-03-08
申请人： Yasufumi Shirakawa , Masaki Taniguchi , Hideo Fukuda , Yuzo Shimizu , Shinya Esaki
发明人： Yasufumi Shirakawa , Masaki Taniguchi , Hideo Fukuda , Yuzo Shimizu , Shinya Esaki
IPC分类号： H01L31/02 , G11B7/24 , G11B7/26 , H01L21/00 , H01L23/02 , H01L23/28 , H01L25/16 , H01L27/14 , H01L27/15 , H01L31/00 , H01L31/0203 , H01L31/0232 , H01L31/12 , H01L33/00
CPC分类号： H01L31/0203 , G11B7/13 , H01L25/167 , H01L31/02325 , H01L2224/16 , H01L2224/48227 , H01L2924/3025 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A packaging structure suitable for an integrated circuit device receiving short-wavelength laser light is provided. A lead-mounted substrate is placed on the side of the light receiving surface of the integrated circuit device having a photo detecting part. The lead is electrically connected with the integrated circuit device via an electrode. The integrated circuit device and the substrate are encapsulated with an encapsulation section. The substrate has an opening at a position above the photo detecting part.
摘要翻译：提供了适用于接收短波长激光的集成电路器件的封装结构。引线安装基板被放置在具有光检测部分的集成电路装置的光接收表面的一侧。引线通过电极与集成电路器件电连接。集成电路器件和衬底用封装部分封装。基板在光检测部分上方的位置具有开口。

9. 发明申请

US20110199673A1 INTEGRATED OPTICAL DEVICE AND OPTICAL PICKUP DEVICE USING THE SAME 审中-公开
标题翻译：集成光学器件和使用该光学器件的光学拾取器件
公开(公告)号：US20110199673A1
公开(公告)日：2011-08-18
申请号：US13052842
申请日：2011-03-21
申请人： Shingo OKAURA , Masaki Taniguchi , Hideo Fukuda
发明人： Shingo OKAURA , Masaki Taniguchi , Hideo Fukuda
IPC分类号： H01S5/00
CPC分类号： H01S5/0683 , G11B7/1263 , G11B7/13 , H01S5/4087
摘要： An integrated optical device includes a plurality of semiconductor lasers which emit different wavelengths of laser light, a comparator circuit which compares voltages across terminals of the respective plurality of semiconductor lasers, and outputs a signal depending on the comparison result, a light-receiving element which outputs a photocurrent depending on the amounts of laser light emitted from the plurality of semiconductor lasers, and a current mirror circuit which switches between amplification and attenuation with respect to the photocurrent output from the light-receiving element based on the signal output from the comparator circuit, and outputs a monitor signal.
摘要翻译：集成光学器件包括发射不同波长的激光的多个半导体激光器，比较电路，其对相应的多个半导体激光器的端子之间的电压进行比较，并根据比较结果输出信号;光接收元件，输出根据从多个半导体激光器发射的激光的量的光电流，以及基于从比较器电路输出的信号相对于从光接收元件的光电流输出而在放大和衰减之间切换的电流镜电路，并输出监视信号。

10. 发明授权

US07888765B2 Optical semiconductor device 失效
标题翻译：光半导体器件
公开(公告)号：US07888765B2
公开(公告)日：2011-02-15
申请号：US12173429
申请日：2008-07-15
申请人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai
发明人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai
IPC分类号： H01L31/102
CPC分类号： H01L31/1105 , G11B7/13
摘要： An optical semiconductor device includes a phototransistor for receiving incident light. The phototransistor includes a collector layer of a first conductivity type formed on a semiconductor substrate, a base layer of a second conductivity type formed on the collector layer, and an emitter layer of a first conductivity type formed on the base layer. A thickness of the emitter layer is equal to or less than an absorption length of the incident light in the semiconductor substrate.
摘要翻译：光学半导体器件包括用于接收入射光的光电晶体管。光电晶体管包括形成在半导体衬底上的第一导电类型的集电极层，形成在集电极层上的第二导电类型的基极层和形成在基极层上的第一导电类型的发射极层。发射极层的厚度等于或小于半导体衬底中的入射光的吸收长度。

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