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    • 3. 发明申请
    • INFORMATION-PROVIDING DEVICE, INFORMATION-PROVIDING SYSTEM
    • 信息提供设备,信息提供系统
    • US20150180947A1
    • 2015-06-25
    • US14411722
    • 2012-06-29
    • Masato Endo
    • Masato Endo
    • H04L29/08H04L29/06
    • H04L67/10H04L67/22H04L67/26H04L67/42
    • An information-providing system for providing information to a user includes an information terminal including a display unit as an output unit capable of outputting information, and an information management server for managing a predetermined site, which is registered by the user and is capable of providing information on a network, the information management server being connected to the information terminal via networks to be able to communicate information to and from the information terminal. The information terminal and the information management servers respectively include control units for causing, when a significant change has been made, through involvement of another party other than the user, to a site status of the predetermined site, the display unit as the output unit to output recommendation information for recommending access to the predetermined site.
    • 用于向用户提供信息的信息提供系统包括信息终端,其包括作为输出信息的输出单元的显示单元和用于管理预定位置的信息管理服务器,其由用户注册并且能够提供 网络上的信息,信息管理服务器经由网络连接到信息终端,以能够向信息终端传送信息。 信息终端和信息管理服务器分别包括控制单元,用于当已经通过非用户的另一方的参与而使重要变化导致预定站点的站点状态时,将显示单元作为输出单元 输出推荐信息以推荐访问预定的站点。
    • 5. 发明申请
    • ADVERTISEMENT PRESENTATION SYSTEM, ADVERTISEMENT PRESENTATION DEVICE, AND ADVERTISEMENT PROVISION DEVICE
    • 广告介绍系统,广告介绍设备和广告规定设备
    • US20140249913A1
    • 2014-09-04
    • US14352415
    • 2011-10-20
    • Masato Endo
    • Masato Endo
    • G06Q30/02
    • G06Q30/0266G06Q30/02G06Q30/0246
    • An information management center transmits advertisement information to a vehicle. The vehicle displays a predetermined advertisement on a body display part based on the transmitted advertisement information. After a predetermined time has passed since the display of the advertisement by the body display part ended, the information management center acquires the results information about change of the sales results of an advertised good which is an object of a predetermined advertisement from the store existing within a predetermined distance from a location of the body display part through a network. The information management center returns remuneration to a user of the vehicle which permitted use of the body display part, when a sales volume, for example, is increasing based on the acquired results information.
    • 信息管理中心向车辆发送广告信息。 基于发送的广告信息,车辆在车身显示部上显示预定的广告。 在从身体显示部显示广告开始经过预定时间之后,信息管理中心从存在于内部的商店获取关于作为预定广告的对象的广告商品的销售结果的变更的结果信息 距离身体显示部分的位置经由网络的预定距离。 当销售量例如根据获取的结果信息而增加时,信息管理中心向允许使用身体显示部分的车辆的用户返回报酬。
    • 7. 发明授权
    • Non-volatile semiconductor memory device for suppressing deterioration in junction breakdown voltage and surface breakdown voltage of transistor
    • 用于抑制晶体管的结击穿电压和表面击穿电压的劣化的非易失性半导体存储器件
    • US08604517B2
    • 2013-12-10
    • US13234613
    • 2011-09-16
    • Mitsuhiro NoguchiHiroyuki KutsukakeMasato Endo
    • Mitsuhiro NoguchiHiroyuki KutsukakeMasato Endo
    • H01L29/66
    • H01L27/11524H01L27/11519
    • According to one embodiment, a non-volatile semiconductor memory device includes a plurality of memory cells and a transistor. The transistor includes a gate insulating film, a gate electrode on the gate insulating film, a sidewall insulating film on both side surfaces of the gate electrode, a source diffusion layer corresponding to the sidewall insulating film, a first hollow formed in a position at a height less than a bottom surface of the gate insulating film directly below an outer side surface of the sidewall insulating film of another side of the gate electrode, a second hollow formed in the first hollow at a position at a height less than the first hollow, and a drain diffusion layer corresponding to another side of the gate electrode and including a low-concentration drain region formed on a bottom surface of the second hollow and a high-concentration drain region.
    • 根据一个实施例,非易失性半导体存储器件包括多个存储单元和晶体管。 晶体管包括栅极绝缘膜,栅极绝缘膜上的栅电极,栅电极的两个侧表面上的侧壁绝缘膜,对应于侧壁绝缘膜的源极扩散层,形成在位于 高度小于栅电极另一侧的侧壁绝缘膜的外侧表面正下方的栅极绝缘膜的底表面,在第一中空部分中形成的第二中空在比第一中空部的高度低的位置处, 以及与栅电极的另一侧对应的漏极扩散层,并且包括形成在第二中空部的底面上的低浓度漏极区域和高浓度漏极区域。
    • 8. 发明授权
    • Nonvolatile semiconductor memory device
    • 非易失性半导体存储器件
    • US08569847B2
    • 2013-10-29
    • US13236690
    • 2011-09-20
    • Masato Endo
    • Masato Endo
    • H01L29/78
    • H01L27/11524H01L27/11531
    • A nonvolatile semiconductor memory device in one embodiment includes a select gate switch transistor having a gate insulating film formed on a semiconductor substrate, a gate electrode formed on the gate insulating film, and first and second source/drain regions provided in the semiconductor substrate so as to face each other across the gate electrode. The first source/drain region includes a first n-type impurity layer and a second n-type impurity layer which has a higher impurity concentration and has a shallower depth than the first n-type impurity layer. The second source/drain region has a third n-type impurity layer which has a lower impurity concentration and has a shallower depth than the first n-type impurity layer and a fourth n-type impurity layer which has a higher impurity concentration and has a deeper depth than the third n-type impurity layer.
    • 一个实施例中的非易失性半导体存储器件包括选择栅极开关晶体管,其具有形成在半导体衬底上的栅极绝缘膜,形成在栅极绝缘膜上的栅极电极以及设置在半导体衬底中的第一和第二源极/漏极区域, 以跨越栅极电极彼此面对。 第一源极/漏极区包括第一n型杂质层和具有比第一n型杂质层更浅的杂质浓度的第二n型杂质层。 第二源极/漏极区具有第三n型杂质层,其具有较低的杂质浓度并且具有比第一n型杂质层更浅的深度和具有较高杂质浓度的第四n型杂质层,并且具有 比第三n型杂质层更深的深度。
    • 10. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 半导体器件及其制造方法
    • US20110272755A1
    • 2011-11-10
    • US13188803
    • 2011-07-22
    • Masato ENDOFumitaka Arai
    • Masato ENDOFumitaka Arai
    • H01L27/115
    • H01L27/105H01L27/11526H01L27/11529
    • A semiconductor device comprising a first insulating film provided on a semiconductor substrate in a cell transistor region, a first conductive film provided on the first insulating film, an inter-electrode insulating film provided on the first conductive film, a second conductive film provided on the inter-electrode insulating film and having a first metallic silicide film on a top surface thereof, first source/drain regions formed on a surface of the semiconductor substrate, a second insulating film provided on the semiconductor substrate in at least one of a selection gate transistor region and a peripheral transistor region, a third conductive film provided on the second insulating film and having a second metallic silicide film having a thickness smaller than a thickness of the first metallic silicide film on a top surface thereof, and a second source/drain regions formed on the surface of the semiconductor substrate.
    • 一种半导体器件,包括设置在单元晶体管区域中的半导体衬底上的第一绝缘膜,设置在第一绝缘膜上的第一导电膜,设置在第一导电膜上的电极间绝缘膜,设置在第一绝缘膜上的第二导电膜 电极间绝缘膜,在其上表面具有第一金属硅化物膜,形成在所述半导体基板的表面上的第一源极/漏极区域,设置在所述半导体基板上的选择栅极晶体管中的至少一个中的第二绝缘膜 区域和周边晶体管区域,第三导电膜,设置在第二绝缘膜上,并且具有厚度小于其顶表面上的第一金属硅化物膜的厚度的第二金属硅化物膜,以及第二源极/漏极区域 形成在半导体基板的表面上。