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1. 发明授权

US09252169B2 Solid-state imaging device and imaging system 有权
标题翻译：固态成像装置和成像系统
公开(公告)号：US09252169B2
公开(公告)日：2016-02-02
申请号：US13807084
申请日：2011-06-22
申请人： Masahiro Kobayashi , Mineo Shimotsusa
发明人： Masahiro Kobayashi , Mineo Shimotsusa
IPC分类号： H01L27/146 , H01L27/02 , H01L27/28
CPC分类号： H01L27/14689 , H01L27/0255 , H01L27/0296 , H01L27/146 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/288
摘要： A solid-state imaging device includes: a first semiconductor substrate including a photoelectric conversion element; and a second semiconductor substrate including at least a part of a peripheral circuit arranged in a main face of the second semiconductor substrate, the peripheral circuit generating a signal based on the charge of the photoelectric conversion element, a main face of the first semiconductor substrate and the main face of the second semiconductor substrate being opposed to each other with sandwiching a wiring structure therebetween; a pad to be connected to an external terminal; and a protection circuit electrically connected to the pad and to the peripheral circuit, wherein the protection circuit is arranged in the main face of the second semiconductor substrate.
摘要翻译：固态成像装置包括：包括光电转换元件的第一半导体衬底; 以及第二半导体衬底，包括布置在第二半导体衬底的主面中的外围电路的至少一部分，外围电路基于光电转换元件的电荷，第一半导体衬底的主面和所述第二半导体衬底的主面通过在其间夹着布线结构相互相对; 要连接到外部端子的焊盘; 以及保护电路，电连接到所述焊盘和所述外围电路，其中所述保护电路布置在所述第二半导体衬底的主面中。

2. 发明授权

US09029967B2 Solid-state image pickup device having waveguides in light-receiving and light-shielding areas 有权
标题翻译：在光接收和遮光区域中具有波导的固态图像拾取装置
公开(公告)号：US09029967B2
公开(公告)日：2015-05-12
申请号：US13362649
申请日：2012-01-31
申请人： Mineo Shimotsusa , Masahiro Kobayashi
发明人： Mineo Shimotsusa , Masahiro Kobayashi
IPC分类号： H01L31/0232 , H01L27/146
CPC分类号： H01L27/14623 , H01L27/14614 , H01L27/14621 , H01L27/14625 , H01L27/14629 , H01L27/14636 , H01L27/14638 , H01L27/14643 , H01L27/14645 , H01L27/14685 , H01L27/14689
摘要： A solid-state image pickup device includes a semiconductor substrate in which photoelectric conversion units are arranged. An insulator is disposed on the semiconductor substrate. The insulator has holes associated with the respective photoelectric conversion units. Members are arranged in the respective holes. A light-shielding member is disposed on the opposite side of one of the members from the semiconductor substrate, such that only the associated photoelectric conversion unit is shielded from light. In the solid-state image pickup device, the holes are simultaneously formed and the members are simultaneously formed.
摘要翻译：固体摄像装置包括其中布置有光电转换单元的半导体衬底。绝缘体设置在半导体衬底上。绝缘体具有与各个光电转换单元相关联的孔。会员排列在相应的孔中。遮光构件设置在与半导体基板的一个构件的相对侧上，使得只有相关联的光电转换单元被遮光。在固态图像拾取装置中，同时形成孔并且同时形成构件。

3. 发明授权

US08947566B2 Solid-state imaging apparatus and manufacturing method of solid-state imaging apparatus 有权
公开(公告)号：US08947566B2
公开(公告)日：2015-02-03
申请号：US13807107
申请日：2011-06-22
申请人： Masahiro Kobayashi , Mineo Shimotsusa
发明人： Masahiro Kobayashi , Mineo Shimotsusa
IPC分类号： H04N5/335 , H04N3/14 , H01L31/062 , H01L31/0224 , H01L27/146 , H01L31/18
CPC分类号： H01L27/1469 , H01L21/76898 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14687 , H01L31/0224 , H01L31/18
摘要： The first face of the pad is situated between the front-side face of the second semiconductor substrate and a hypothetical plane including and being parallel to the front-side face, and a second face of the pad that is a face on the opposite side of the first face is situated between the first face and the front-side face of the second semiconductor substrate, and wherein the second face is connected to the wiring structure so that the pad is electrically connected to the circuit arranged in the front-side face of the second semiconductor substrate via the wiring structure.

4. 发明申请

US20130107075A1 SOLID-STATE IMAGING DEVICE AND IMAGING SYSTEM 有权
标题翻译：固态成像装置和成像系统
公开(公告)号：US20130107075A1
公开(公告)日：2013-05-02
申请号：US13807084
申请日：2011-06-22
申请人： Masahiro Kobayashi , Mineo Shimotsusa
发明人： Masahiro Kobayashi , Mineo Shimotsusa
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L27/0255 , H01L27/0296 , H01L27/146 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/288
摘要： A solid-state imaging device includes: a first semiconductor substrate including a photoelectric conversion element; and a second semiconductor substrate including at least a part of a peripheral circuit arranged in a main face of the second semiconductor substrate, the peripheral circuit generating a signal based on the charge of the photoelectric conversion element, a main face of the first semiconductor substrate and the main face of the second semiconductor substrate being opposed to each other with sandwiching a wiring structure therebetween; a pad to be connected to an external terminal; and a protection circuit electrically connected to the pad and to the peripheral circuit, wherein the protection circuit is arranged in the main face of the second semiconductor substrate.
摘要翻译：固态成像装置包括：包括光电转换元件的第一半导体衬底; 以及第二半导体衬底，包括布置在第二半导体衬底的主面中的外围电路的至少一部分，外围电路基于光电转换元件的电荷，第一半导体衬底的主面和所述第二半导体衬底的主面通过在其间夹着布线结构相互相对; 要连接到外部端子的焊盘; 以及保护电路，电连接到所述焊盘和所述外围电路，其中所述保护电路布置在所述第二半导体衬底的主面中。

5. 发明授权

US07411170B2 Photoelectric-conversion apparatus and image-pickup system 有权
标题翻译：光电转换装置和摄像系统
公开(公告)号：US07411170B2
公开(公告)日：2008-08-12
申请号：US11835009
申请日：2007-08-07
申请人： Mineo Shimotsusa , Shigeru Nishimura , Shunsuke Takimoto
发明人： Mineo Shimotsusa , Shigeru Nishimura , Shunsuke Takimoto
IPC分类号： H01L27/00 , H01L31/062
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14641
摘要： A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.
摘要翻译：光电转换装置包括光电转换区域，其中多个光电转换元件被配置为将入射光转换成电荷，多个浮动扩散区域，多个转移MOS晶体管，被配置为转移电荷提供到浮置扩散区域的光电转换元件，以及被配置为将基于所传送的电荷产生的信号读取并发送到输出线的多个放大MOS晶体管。在光电转换元件的光接收表面上设置防反射膜。放大MOS晶体管的栅极通过在单个接触孔中提供一个导体而电连接到一个浮动扩散区域，并且防反射膜覆盖除了接触孔的基部之外的光电转换区域。

6. 发明授权

US06825543B2 Semiconductor device, method for manufacturing the same, and liquid jet apparatus 有权
公开(公告)号：US06825543B2
公开(公告)日：2004-11-30
申请号：US10025674
申请日：2001-12-26
申请人： Mineo Shimotsusa , Kei Fujita , Yukihiro Hayakawa
发明人： Mineo Shimotsusa , Kei Fujita , Yukihiro Hayakawa
IPC分类号： H01L2358
CPC分类号： H01L29/7816 , B41J2/14072 , B41J2202/13 , H01L21/26586 , H01L27/088 , H01L29/0696 , H01L29/1095 , H01L29/42368 , H01L29/66674 , H01L29/7835 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device in which electro-thermal conversion elements and switching devices for flowing currents through the elements are integrated on a first conductive type semiconductor substrate. The switching devices are insulated gate type field effect transistors having a second conductive type first semiconductor region on one principal surface of the semiconductor substrate; a first conductive type second semiconductor region for supplying a channel region and for adjoining the first semiconductor region; a second conductive type source region on the surface of the second semiconductor region; a second conductive type drain region on the surface of the first semiconductor region; and gate electrodes on the channel region with a gate insulator film between them. The second semiconductor region is formed by a semiconductor having an impurity concentration higher than that of the first semiconductor region, and is disposed between two adjacent drain regions, separating them in a traverse direction.

7. 发明授权

US06800902B2 Semiconductor device, method of manufacturing the same and liquid jet apparatus 有权
标题翻译：半导体装置及其制造方法以及液体喷射装置
公开(公告)号：US06800902B2
公开(公告)日：2004-10-05
申请号：US10067904
申请日：2002-02-08
申请人： Mineo Shimotsusa
发明人： Mineo Shimotsusa
IPC分类号： G01D1500
CPC分类号： H01L27/0922 , B41J2/14072 , B41J2202/13 , H01L21/823814 , H01L27/088
摘要： In a semiconductor device in which a switching element for allowing a current to flow to a load and a circuit for driving the switching element are formed on a common substrate, the switching element is formed of a DMOS transistor, and the circuit for driving the switching element includes an MOS transistor having a characteristic different from that of the DMOS transistor.
摘要翻译：在公共基板上形成有用于使电流流向负载的开关元件和用于驱动开关元件的电路的半导体装置中，开关元件由DMOS晶体管构成，驱动开关用电路元件包括具有与DMOS晶体管不同的特性的MOS晶体管。

8. 发明授权

US5527730A Method of forming a capacitor having contact hole treated with hydrogen atoms and energy beam 失效
标题翻译：形成具有用氢原子和能量束处理的接触孔的电容器的方法
公开(公告)号：US5527730A
公开(公告)日：1996-06-18
申请号：US425081
申请日：1995-04-19
申请人： Yuzo Kayaoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
发明人： Yuzo Kayaoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
IPC分类号： H01L21/02 , H01L21/285 , H01L21/8246 , H01L27/112 , H01L21/70 , H01L27/00
CPC分类号： H01L28/40 , H01L21/28537 , H01L27/112 , H01L27/11226 , Y10S148/14 , Y10S438/974
摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.
摘要翻译：在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。金属被选择性地沉积在以左氢原子终止的部分上。

9. 发明授权

US09000343B2 Solid-state imaging apparatus 有权
标题翻译：固态成像装置
公开(公告)号：US09000343B2
公开(公告)日：2015-04-07
申请号：US13807002
申请日：2011-06-23
申请人： Takeshi Ichikawa , Mineo Shimotsusa , Genzo Momma
发明人： Takeshi Ichikawa , Mineo Shimotsusa , Genzo Momma
IPC分类号： H01L27/146 , H01L31/00
CPC分类号： H01L27/14636 , H01L27/14601 , H01L27/14603 , H01L27/14609 , H01L27/14634 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14645 , H01L27/1469
摘要： The present invention relates to a solid-state imaging apparatus including a first substrate having a plurality of photoelectric conversion units and a second substrate having a plurality of readout circuits. The first substrate is provided with a plurality of first conductive patterns that are electrically separated from one another and the second substrate is provided with a plurality of second conductive patterns that are electrically separated from one another. The first conductive patterns each include a first partial pattern extending in a first direction. The second conductive patterns each include a partial pattern extending in a second direction different from the first direction. The first partial pattern has a length extending in the first direction longer than a length thereof in the second direction.
摘要翻译：固态摄像装置技术领域本发明涉及具有多个光电转换单元的第一基板和具有多个读出电路的第二基板的固体摄像装置。第一基板设置有彼此电分离的多个第一导电图案，并且第二基板设置有彼此电分离的多个第二导电图案。第一导电图案各自包括沿第一方向延伸的第一部分图案。第二导电图案各自包括沿与第一方向不同的第二方向延伸的部分图案。第一部分图案具有在第一方向上比第二方向上的长度长的长度。

10. 发明申请

US20130099291A1 SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR 有权
公开(公告)号：US20130099291A1
公开(公告)日：2013-04-25
申请号：US13807065
申请日：2011-06-21
申请人： Mineo Shimotsusa , Fumihiro Inui
发明人： Mineo Shimotsusa , Fumihiro Inui
IPC分类号： H01L27/146
CPC分类号： H04N5/378 , H01L27/14601 , H01L27/14609 , H01L27/14612 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14683
摘要： A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.

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