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1. 发明授权

US08482082B2 Electrostatic discharge protection device 有权
标题翻译：静电放电保护装置
公开(公告)号：US08482082B2
公开(公告)日：2013-07-09
申请号：US13239392
申请日：2011-09-22
申请人： Ming-Fang Lai
发明人： Ming-Fang Lai
IPC分类号： H01L29/66
CPC分类号： H01L27/0266
摘要： An electrostatic discharge (ESD) protection device includes a first transistor and a second transistor. The first transistor includes a first bulk electrode, a first electrode and a second electrode. The first bulk electrode and the first electrode form a first parasitic diode. The first bulk electrode and the second electrode form a second parasitic diode. The second transistor includes a second bulk electrode, a third electrode and a fourth electrode. The second bulk electrode and the third electrode form a third parasitic diode. The second bulk electrode and the fourth electrode form a fourth parasitic diode. The first bulk electrode is connected to the third electrode, and the second bulk electrode is connected to the first electrode.
摘要翻译：静电放电（ESD）保护装置包括第一晶体管和第二晶体管。第一晶体管包括第一体电极，第一电极和第二电极。第一体电极和第一电极形成第一寄生二极管。第一体积电极和第二电极形成第二寄生二极管。第二晶体管包括第二体电极，第三电极和第四电极。第二体电极和第三电极形成第三寄生二极管。第二体电极和第四电极形成第四寄生二极管。第一体电极连接到第三电极，第二体电极连接到第一电极。

2. 发明授权

US08653641B2 Integrated circuit device 有权
标题翻译：集成电路器件
公开(公告)号：US08653641B2
公开(公告)日：2014-02-18
申请号：US13613480
申请日：2012-09-13
申请人： Kuan-Neng Chen , Ming-Fang Lai , Hung-Ming Chen
发明人： Kuan-Neng Chen , Ming-Fang Lai , Hung-Ming Chen
IPC分类号： H01L21/50
CPC分类号： H01L23/60 , H01L24/05 , H01L25/0657 , H01L2224/0557 , H01L2225/06541 , H01L2924/00014 , H01L2924/10253 , H01L2924/1033 , H01L2924/1301 , H01L2924/14 , H01L2924/00 , H01L2224/05552
摘要： An integrated circuit device includes: a first chip including a first substrate and a main circuit formed on said first chip; a second chip stacked on the first substrate and including a second substrate that is independent from the first substrate, and a protective circuit for protecting the main circuit; and a conductive channel unit extending from the protective circuit and electrically connected to the main circuit.
摘要翻译：集成电路装置包括：第一芯片，包括形成在所述第一芯片上的第一基板和主电路; 堆叠在所述第一基板上并且包括独立于所述第一基板的第二基板的第二芯片以及用于保护所述主电路的保护电路; 以及从保护电路延伸并电连接到主电路的导电通道单元。

3. 发明申请

US20130169355A1 Integrated Circuit Device 有权
标题翻译：集成电路器件
公开(公告)号：US20130169355A1
公开(公告)日：2013-07-04
申请号：US13613480
申请日：2012-09-13
申请人： Kuan-Neng Chen , Ming-Fang Lai , Hung-Ming Chen
发明人： Kuan-Neng Chen , Ming-Fang Lai , Hung-Ming Chen
IPC分类号： H01L25/00
CPC分类号： H01L23/60 , H01L24/05 , H01L25/0657 , H01L2224/0557 , H01L2225/06541 , H01L2924/00014 , H01L2924/10253 , H01L2924/1033 , H01L2924/1301 , H01L2924/14 , H01L2924/00 , H01L2224/05552
摘要： An integrated circuit device includes: a first chip including a first substrate and a main circuit formed on said first chip; a second chip stacked on the first substrate and including a second substrate that is independent from the first substrate, and a protective circuit for protecting the main circuit; and a conductive channel unit extending from the protective circuit and electrically connected to the main circuit.
摘要翻译：集成电路装置包括：第一芯片，包括形成在所述第一芯片上的第一基板和主电路; 堆叠在所述第一基板上并且包括独立于所述第一基板的第二基板的第二芯片以及用于保护所述主电路的保护电路; 以及从保护电路延伸并电连接到主电路的导电通道单元。

4. 发明申请

US20130075829A1 ELECTROSTATIC DISCHARGE PROTECTION DEVICE 有权
标题翻译：静电放电保护装置
公开(公告)号：US20130075829A1
公开(公告)日：2013-03-28
申请号：US13239392
申请日：2011-09-22
申请人： Ming-Fang LAI
发明人： Ming-Fang LAI
IPC分类号： H01L27/088 , H01L27/06 , H01L27/082
CPC分类号： H01L27/0266
摘要： An electrostatic discharge (ESD) protection device includes a first transistor and a second transistor. The first transistor includes a first bulk electrode, a first electrode and a second electrode. The first bulk electrode and the first electrode form a first parasitic diode. The first bulk electrode and the second electrode form a second parasitic diode. The second transistor includes a second bulk electrode, a third electrode and a fourth electrode. The second bulk electrode and the third electrode form a third parasitic diode. The second bulk electrode and the fourth electrode form a fourth parasitic diode. The first bulk electrode is connected to the third electrode, and the second bulk electrode is connected to the first electrode.
摘要翻译：静电放电（ESD）保护装置包括第一晶体管和第二晶体管。第一晶体管包括第一体电极，第一电极和第二电极。第一体电极和第一电极形成第一寄生二极管。第一体积电极和第二电极形成第二寄生二极管。第二晶体管包括第二体电极，第三电极和第四电极。第二体电极和第三电极形成第三寄生二极管。第二体电极和第四电极形成第四寄生二极管。第一体电极连接到第三电极，第二体电极连接到第一电极。

5. 发明申请

US20120153437A1 ESD PROTECTION STRUCTURE FOR 3D IC 审中-公开
标题翻译： 3D IC的ESD保护结构
公开(公告)号：US20120153437A1
公开(公告)日：2012-06-21
申请号：US13041358
申请日：2011-03-05
申请人： Kuan-Neng Chen , Ming-Fang Lai , Hung-Ming Chen
发明人： Kuan-Neng Chen , Ming-Fang Lai , Hung-Ming Chen
IPC分类号： H01L29/06
CPC分类号： H01L27/0296 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： An electrostatic discharge (ESD) protection structure for a 3D IC is provided. The ESD protection structure includes a first active layer, a through-silicon via (TSV) device and a second active layer. The TSV is disposed in the first active layer, and the second active layer is stacked with the first active layer. The second active layer includes a substrate and an ESD protection device, wherein the ESD protection device having a doping area embedded in the substrate, and the ESD protection device electrically connects the TSV device.
摘要翻译：提供了一种用于3D IC的静电放电（ESD）保护结构。 ESD保护结构包括第一有源层，穿硅通孔（TSV）器件和第二有源层。 TSV设置在第一有源层中，第二有源层与第一有源层堆叠。第二有源层包括衬底和ESD保护器件，其中ESD保护器件具有嵌入衬底中的掺杂区域，并且ESD保护器件电连接TSV器件。

6. 发明申请

US20100128401A1 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT AND DEVICE 有权
标题翻译：静电放电保护电路和器件
公开(公告)号：US20100128401A1
公开(公告)日：2010-05-27
申请号：US12397352
申请日：2009-03-04
申请人： Ming-Fang Lai , Chung-Ti Hsu
发明人： Ming-Fang Lai , Chung-Ti Hsu
IPC分类号： H02H9/00
CPC分类号： H01L27/0266 , H01L2924/0002 , H01L2924/00
摘要： An electrostatic discharge (ESD) protection circuit is provided. The ESD protection circuit includes a first rail, a second rail, a first transistor and a resistance unit. The drain of the first transistor is electrically coupled to the first rail, and the source and gate of the first transistor are electrically coupled to the second rail. The resistance unit is electrically coupled between a body of the first transistor and the second rail. When ESD occurs, the resistance unit provides a resistance between the body of the first transistor and the second rail. An ESD protection device is also provided.
摘要翻译：提供静电放电（ESD）保护电路。 ESD保护电路包括第一导轨，第二导轨，第一晶体管和电阻单元。第一晶体管的漏极电耦合到第一导轨，并且第一晶体管的源极和栅极电耦合到第二导轨。电阻单元电耦合在第一晶体管的主体和第二导轨之间。当ESD发生时，电阻单元在第一晶体管的主体和第二导轨之间提供电阻。还提供ESD保护装置。

7. 发明授权

US08194370B2 Electrostatic discharge protection circuit and device 有权
标题翻译：静电放电保护电路及器件
公开(公告)号：US08194370B2
公开(公告)日：2012-06-05
申请号：US12397352
申请日：2009-03-04
申请人： Ming-Fang Lai , Chung-Ti Hsu
发明人： Ming-Fang Lai , Chung-Ti Hsu
IPC分类号： H01L23/62
CPC分类号： H01L27/0266 , H01L2924/0002 , H01L2924/00
摘要： An electrostatic discharge (ESD) protection circuit is provided. The ESD protection circuit includes a first rail, a second rail, a first transistor and a resistance unit. The drain of the first transistor is electrically coupled to the first rail, and the source and gate of the first transistor are electrically coupled to the second rail. The resistance unit is electrically coupled between a body of the first transistor and the second rail. When ESD occurs, the resistance unit provides a resistance between the body of the first transistor and the second rail. An ESD protection device is also provided.
摘要翻译：提供静电放电（ESD）保护电路。 ESD保护电路包括第一导轨，第二导轨，第一晶体管和电阻单元。第一晶体管的漏极电耦合到第一导轨，并且第一晶体管的源极和栅极电耦合到第二导轨。电阻单元电耦合在第一晶体管的主体和第二导轨之间。当ESD发生时，电阻单元在第一晶体管的主体和第二导轨之间提供电阻。还提供ESD保护装置。

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