专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09035509B2 Motor 有权
标题翻译：发动机
公开(公告)号：US09035509B2
公开(公告)日：2015-05-19
申请号：US13533354
申请日：2012-06-26
申请人： Naoki Matsumoto
发明人： Naoki Matsumoto
IPC分类号： H02K5/22 , H02K11/02
CPC分类号： H02K11/026 , H02K5/225
摘要： A yoke of a motor has a bottom and an open end and accommodates an armature. An end bracket substantially closes the open end of the yoke. A connector portion, which bulges outward of the yoke, and a cutout portion are formed in the circumferential wall of the end bracket. A pair of feed members is provided to extend from the interior of the end bracket to the connector portion through the cutout portion. The end bracket has an accommodation recess for accommodating the noise suppression element at a position corresponding to the cutout portion. Each feed member has an accommodation recess corresponding portion, which corresponds to the accommodation recess, and a cutout portion corresponding portion, which corresponds to the cutout portion. The distance between the accommodation recess corresponding portions of the feed members is greater than the distance between the cutout portion corresponding portions.
摘要翻译：电动机的轭具有底部和开口端，并且容纳电枢。端部支架基本上封闭轭的开口端。在端托架的周壁上形成有一个连接部，该连接部从轭的外侧凸出，切口部形成。一对进给构件设置成通过切口部分从端托架的内部延伸到连接器部分。端托架具有用于将噪声抑制元件容纳在与切口部分相对应的位置处的容纳凹部。每个进给构件具有对应于容纳凹部的容纳凹部对应部分和对应于切口部分的切口部分对应部分。进给构件的容纳凹部对应部分之间的距离大于切口部分对应部分之间的距离。

2. 发明申请

US20130302992A1 APPARATUS FOR PLASMA TREATMENT AND METHOD FOR PLASMA TREATMENT 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20130302992A1
公开(公告)日：2013-11-14
申请号：US13885708
申请日：2011-11-16
申请人： Toshihisa Nozawa , Caizhong Tian , Masaru Sasaki , Naoki Mihara , Naoki Matsumoto , Kazuki Moyama , Jun Yoshikawa
发明人： Toshihisa Nozawa , Caizhong Tian , Masaru Sasaki , Naoki Mihara , Naoki Matsumoto , Kazuki Moyama , Jun Yoshikawa
IPC分类号： H05H1/46
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32211 , H01J37/3244
摘要： An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.
摘要翻译：一种用于等离子体处理的装置，包括设置有用于安装基板的安装台的处理容器，构造成将第一气体供应到处理容器中的第一气体供给单元，第一等离子体产生单元，其被配置为将第一第二气体供给单元，被配置为将第二气体供应到处理容器中;第二等离子体产生单元，被配置为将至少一部分第二气体转化为第二等离子体。来自安装台的第二气体的入口的高度低于来自安装台的第一气体的入口的高度。

3. 发明授权

US08506753B2 Capacitive coupling plasma processing apparatus and method for using the same 有权
标题翻译：电容耦合等离子体处理装置及其使用方法
公开(公告)号：US08506753B2
公开(公告)日：2013-08-13
申请号：US13177195
申请日：2011-07-06
申请人： Naoki Matsumoto , Chishio Koshimizu , Akira Koshiishi
发明人： Naoki Matsumoto , Chishio Koshimizu , Akira Koshiishi
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01L21/67069 , C23F4/00 , H01J37/32082 , H01J37/3244 , H01J37/32532 , H01J2237/334
摘要： A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.
摘要翻译：等离子体处理装置包括被配置为容纳目标基板并被抽真空的处理容器。第一电极和第二电极在处理容器内彼此相对设置。第一电极包括外部部分和面向第二电极的内部部分，使得外部部分围绕内部部分。 RF电源被配置为向第一电极的外部施加RF功率。 DC电源被配置为向第一电极的内部施加DC电压。处理气体供应单元被配置为将处理气体供应到处理容器中，其中处理气体的等离子体在第一电极和第二电极之间产生。

4. 发明授权

US08404137B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08404137B2
公开(公告)日：2013-03-26
申请号：US13014155
申请日：2011-01-26
申请人： Chishio Koshimizu , Naoki Matsumoto
发明人： Chishio Koshimizu , Naoki Matsumoto
IPC分类号： G01R31/00
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/32706
摘要： A plasma processing apparatus includes a plurality of radio-frequency power supplies for supplying radio-frequency powers having frequencies different from each other, a common feeding line for superposing radio-frequency powers supplied respectively from the plurality of radio-frequency power supplies and feeding the superposed radio-frequency power to a same radio-frequency electrode, a radio-frequency power extracting device for extracting radio-frequency powers having predetermined frequencies from radio-frequency powers fed via the feeding line, and a radio-frequency voltage detector for measuring voltages of the radio-frequency powers having the predetermined frequencies extracted by the radio-frequency power extracting device.
摘要翻译：等离子体处理装置包括多个用于提供具有彼此不同频率的射频功率的高频电源，用于叠加从多个射频电源分别提供的射频功率的馈电线，将叠加的射频电力叠加到同一射频电极，用于从经由馈电线馈送的射频功率提取具有预定频率的射频功率的射频功率提取装置和用于测量电压的射频电压检测器具有由射频功率提取装置提取的预定频率的射频功率。

5. 发明申请

US20130002069A1 MOTOR 有权
标题翻译：发动机
公开(公告)号：US20130002069A1
公开(公告)日：2013-01-03
申请号：US13533354
申请日：2012-06-26
申请人： Naoki MATSUMOTO
发明人： Naoki MATSUMOTO
IPC分类号： H02K11/00
CPC分类号： H02K11/026 , H02K5/225
摘要： A yoke of a motor has a bottom and an open end and accommodates an armature. An end bracket substantially closes the open end of the yoke. A connector portion, which bulges outward of the yoke, and a cutout portion are formed in the circumferential wall of the end bracket. A pair of feed members is provided to extend from the interior of the end bracket to the connector portion through the cutout portion. The end bracket has an accommodation recess for accommodating the noise suppression element at a position corresponding to the cutout portion. Each feed member has an accommodation recess corresponding portion, which corresponds to the accommodation recess, and a cutout portion corresponding portion, which corresponds to the cutout portion. The distance between the accommodation recess corresponding portions of the feed members is greater than the distance between the cutout portion corresponding portions.
摘要翻译：电动机的轭具有底部和开口端，并且容纳电枢。端部支架基本上封闭轭的开口端。在端托架的周壁上形成有一个连接部，该连接部从轭的外侧凸出，切口部形成。一对进给构件设置成通过切口部分从端托架的内部延伸到连接器部分。端托架具有用于将噪声抑制元件容纳在与切口部分相对应的位置处的容纳凹部。每个进给构件具有对应于容纳凹部的容纳凹部对应部分和对应于切口部分的切口部分对应部分。进给构件的容纳凹部对应部分之间的距离大于切口部分对应部分之间的距离。

6. 发明申请

US20120267048A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20120267048A1
公开(公告)日：2012-10-25
申请号：US13454513
申请日：2012-04-24
申请人： Kazuki Moyama , Kiyotaka Ishibashi , Osamu Morita , Takehiro Tanikawa , Naoki Matsumoto , Naoki Mihara , Wataru Yoshikawa
发明人： Kazuki Moyama , Kiyotaka Ishibashi , Osamu Morita , Takehiro Tanikawa , Naoki Matsumoto , Naoki Mihara , Wataru Yoshikawa
IPC分类号： B05C5/00
CPC分类号： H01J37/32192 , H01J37/32229 , H01J37/3244
摘要： A plasma processing apparatus includes a processing chamber, a stage, a dielectric member, a microwave introduction device, an injector, and an electric field shield. The processing chamber has a processing space therein. The stage is provided within the processing chamber. The dielectric member has a through hole and is provided to face the stage. The microwave introduction device is configured to introduce microwave into the processing space via the dielectric member. The injector has at least one through hole and is made of a dielectric material, e.g., a bulk dielectric material. The injector is provided within the dielectric member. The injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space. The electric field shield encloses the injector.
摘要翻译：等离子体处理装置包括处理室，载物台，电介质构件，微波引入装置，注射器和电场屏蔽。处理室在其中具有处理空间。工作台设置在处理室内。电介质构件具有通孔并且设置成面向台。微波引入装置经由电介质构件将微波引入处理空间。喷射器具有至少一个通孔，并且由介电材料制成，例如大体电介质材料。喷射器设置在电介质构件内。介电构件的注射器和通孔形成用于将处理气体供应到处理空间的路径。电场屏蔽封闭注射器。

7. 发明申请

US20120184108A1 METHOD OF PROCESSING OF NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR WAFER, METHOD OF PRODUCING NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20120184108A1
公开(公告)日：2012-07-19
申请号：US13437221
申请日：2012-04-02
申请人： Keiji Ishibashi , Hidenori Mikami , Naoki Matsumoto
发明人： Keiji Ishibashi , Hidenori Mikami , Naoki Matsumoto
IPC分类号： H01L21/302
CPC分类号： H01L21/02021 , C30B29/403 , C30B33/00 , H01L24/32 , H01L33/0075 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , Y10S438/928 , Y10S438/959 , Y10S438/977 , H01L2924/00014 , H01L2924/00
摘要： A nitride semiconductor wafer is planar-processed by grinding a bottom surface of the wafer, etching the bottom surface by, e.g., KOH for removing a bottom process-induced degradation layer, chamfering by a rubber whetstone bonded with 100 wt %-60 wt % #3000-#600 diamond granules and 0 wt %-40 wt % oxide granules, grinding and polishing a top surface of the wafer, etching the top surface for eliminating a top process-induced degradation layer and maintaining a 0.5 μm-10 μm thick edge process-induced degradation layer.

8. 发明申请

US20120145324A1 PLASMA PROCESSING APPARATUS AND METHOD 有权
标题翻译：等离子体加工设备和方法
公开(公告)号：US20120145324A1
公开(公告)日：2012-06-14
申请号：US13396181
申请日：2012-02-14
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
IPC分类号： H01L21/3065
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/32348 , H01J37/3244 , H01J37/32541 , H01J37/32568 , H01J37/32642 , H01J37/32706 , H01J37/32834 , H01J2237/3344 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/67069
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

9. 发明申请

US20120021591A1 Method of Manufacturing Nitride Substrate for Semiconductors 有权
标题翻译：制造半导体氮化物基板的方法
公开(公告)号：US20120021591A1
公开(公告)日：2012-01-26
申请号：US13192483
申请日：2011-07-28
申请人： Naoki Matsumoto
发明人： Naoki Matsumoto
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B33/00
摘要： In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate, owing to layer-base discrepancy in thermal expansion coefficient and lattice constant, bow will be a large ±40 μm to ±100 μm. Since with that bow device fabrication by photolithography is challenging, reducing the bow to +30 μm to −20 μm is the goal. The surface deflected concavely is ground to impart to it a damaged layer that has a stretching effect, making the surface become convex. The damaged layer on the surface having become convex is removed by etching, which curtails the bow. Alternatively, the convex surface on the side opposite the surface having become convex is ground to generate a damaged layer. With the concave surface having become convex due to the damaged layer, suitably etching off the damaged layer curtails the bow.
摘要翻译：在通过使用气相沉积在基底杂质底物上形成GaN层然后除去基底基板而制成的独立的GaN膜中，由于热膨胀系数和晶格常数的层 - 基差异，弓将是大的±40μm至 ±100μm。由于通过光刻的弓形器件制造是具有挑战性的，所以将弓降低到+30μm至-20μm是目标。将凹面偏转的表面研磨成具有拉伸效果的损伤层，使表面变凸。通过蚀刻来去除已经变得凸起的表面上的损伤层，这会削弱弓形。或者，与已经变得凸起的表面相对的一侧的凸表面被研磨以产生受损层。由于损伤层由于凹面变得凸起，因此适当地蚀刻出损伤层，从而使弓弯曲。

10. 发明授权

US08101523B2 Method of processing of nitride semiconductor wafer, nitride semiconductor wafer, method of producing nitride semiconductor device and nitride semiconductor device 失效
标题翻译：氮化物半导体晶片的处理方法，氮化物半导体晶片，氮化物半导体器件的制造方法和氮化物半导体器件
公开(公告)号：US08101523B2
公开(公告)日：2012-01-24
申请号：US12940733
申请日：2010-11-05
申请人： Keiji Ishibashi , Hidenori Mikami , Naoki Matsumoto
发明人： Keiji Ishibashi , Hidenori Mikami , Naoki Matsumoto
IPC分类号： H01L21/302
CPC分类号： H01L21/02021 , C30B29/403 , C30B33/00 , H01L24/32 , H01L33/0075 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , Y10S438/928 , Y10S438/959 , Y10S438/977 , H01L2924/00014 , H01L2924/00
摘要： A nitride semiconductor wafer is planar-processed by grinding a bottom surface of the wafer, etching the bottom surface by, e.g., KOH for removing a bottom process-induced degradation layer, chamfering by a rubber whetstone bonded with 100 wt %-60 wt % #3000-#600 diamond granules and 0 wt %-40 wt % oxide granules, grinding and polishing a top surface of the wafer, etching the top surface for eliminating a top process-induced degradation layer and maintaining a 0.5 μm-10 μm thick edge process-induced degradation layer.
摘要翻译：氮化物半导体晶片通过研磨晶片的底面进行平面加工，例如通过KOH去除底部工艺诱导的降解层，蚀刻底面，通过与100重量％-60重量％粘合的橡胶砂轮倒角，＃3000-＃600金刚石颗粒和0重量％-40重量％的氧化物颗粒，研磨和抛光晶片的顶表面，蚀刻顶表面以消除顶部工艺诱导的降解层并保持0.5μm-10μm厚边缘过程诱导的降解层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式