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1. 发明申请

US20130032822A1 SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20130032822A1
公开(公告)日：2013-02-07
申请号：US13564779
申请日：2012-08-02
申请人： Keiji ISHIBASHI
发明人： Keiji ISHIBASHI
IPC分类号： H01L29/24 , H01L21/304 , H01L21/20 , B32B3/02
CPC分类号： H01L21/304 , C30B23/025 , C30B29/36 , C30B33/00 , H01L21/02002 , H01L21/02008 , H01L21/0201 , H01L21/02378 , H01L21/0243 , H01L21/02433 , H01L21/02529 , H01L21/02658 , H01L21/28 , H01L29/045 , H01L29/1608 , H01L29/167 , H01L29/34 , H01L29/36 , H01L29/45 , H01L29/4966 , H01L29/66068 , H01L29/7802 , H01L29/7813 , Y10T428/21
摘要： A substrate capable of achieving a lowered probability of defects produced in a step of forming an epitaxial film or a semiconductor element, a semiconductor device including the substrate, and a method of manufacturing a semiconductor device are provided. A substrate is a substrate having a front surface and a back surface, in which at least a part of the front surface is composed of single crystal silicon carbide, the substrate having an average value of surface roughness Ra at the front surface not greater than 0.5 nm, a standard deviation σ of that surface roughness Ra not greater than 0.2 nm, an average value of surface roughness Ra at the back surface not smaller than 0.3 nm and not greater than 10 nm, standard deviation σ of that surface roughness Ra not greater than 3 nm, and a diameter D of the front surface not smaller than 110 mm.

2. 发明授权

US08115927B2 Production method of compound semiconductor member 失效
标题翻译：化合物半导体部件的制造方法
公开(公告)号：US08115927B2
公开(公告)日：2012-02-14
申请号：US12622971
申请日：2009-11-20
申请人： Akihiro Hachigo , Takayuki Nishiura , Keiji Ishibashi
发明人： Akihiro Hachigo , Takayuki Nishiura , Keiji Ishibashi
IPC分类号： G01J4/00
CPC分类号： G01N21/211
摘要： A method of evaluating damage of a compound semiconductor member, comprising: a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an optical constant obtained by the spectroscopic ellipsometry measurement.
摘要翻译： 1.一种评价化合物半导体部件的损伤的方法，包括：在所述化合物半导体部件的表面上进行光谱椭圆偏光测定的工序; 以及通过使用通过光谱椭圆偏振测量获得的光学常数的光谱，使用包含对应于化合物半导体部件的带隙的波长的波长带中的光谱来评估化合物半导体部件的表面的损伤的步骤。

3. 发明授权

US07973322B2 Nitride semiconductor light emitting device and method for forming the same 有权
标题翻译：氮化物半导体发光器件及其形成方法
公开(公告)号：US07973322B2
公开(公告)日：2011-07-05
申请号：US12440643
申请日：2008-04-17
申请人： Katsushi Akita , Takashi Kyono , Keiji Ishibashi , Hitoshi Kasai
发明人： Katsushi Akita , Takashi Kyono , Keiji Ishibashi , Hitoshi Kasai
IPC分类号： H01L29/00 , H01L21/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/02 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/2009 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： An active layer 17 is provided so as to emit light having a light emission wavelength in the range of 440 to 550 nm. A first conduction type gallium nitride-based semiconductor region 13, the active layer 17, and a second conduction type gallium nitride-based semiconductor region 15 are disposed in a predetermined axis Ax direction. The active layer 17 includes a well layer composed of hexagonal InXGa1-XN (0.16≦X≦0.35, X: strained composition), and the indium composition X is represented by a strained composition. The a-plane of the hexagonal InXGa1-XN is aligned in the predetermined axis Ax direction. The thickness of the well layer is in the range of more than 2.5 nm to 10 nm. When the thickness of the well layer is set to 2.5 nm or more, a light emitting device having a light emission wavelength of 440 nm or more can be formed.
摘要翻译：提供有源层17以发射具有在440至550nm范围内的发光波长的光。第一导电型氮化镓基半导体区域13，有源层17和第二导电型氮化镓基半导体区域15设置在预定的轴线方向。有源层17包括由六方晶系InXGa1-XN（0.16＆nlE; X＆lt; EL; 0.35，X：应变组成）构成的阱层，铟组合物X由应变组成表示。六边形InXGa1-XN的a平面在预定轴Ax方向上对准。阱层的厚度在大于2.5nm至10nm的范围内。当阱层的厚度设定为2.5nm以上时，可以形成发光波长为440nm以上的发光元件。

4. 发明申请

US20110146565A1 GROUP III NITRIDE CRYSTAL AND METHOD FOR SURFACE TREATMENT THEREOF, GROUP III NITRIDE STACK AND MANUFACTURING METHOD THEREOF, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：第III组氮化物晶体及其表面处理方法，第III组氮化物堆积及其制造方法及其III族氮化物半导体器件及其制造方法
公开(公告)号：US20110146565A1
公开(公告)日：2011-06-23
申请号：US13037015
申请日：2011-02-28
申请人： Keiji ISHIBASHI , Naoki MATSUMOTO , Masato IRIKURA
发明人： Keiji ISHIBASHI , Naoki MATSUMOTO , Masato IRIKURA
IPC分类号： C30B19/00 , C30B23/02 , C30B25/02
CPC分类号： H01L21/02013 , C30B29/403 , C30B33/00 , H01L21/02024 , H01L24/32 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： A method for surface treatment of a group III nitride crystal includes the steps of lapping a surface of a group III nitride crystal using a hard abrasive grain with a Mohs hardness higher than 7, and abrasive-grain-free polishing the lapped surface of the group III nitride crystal using a polishing solution without containing abrasive grain, and the polishing solution without containing abrasive grain has a pH of not less than 1 and not more than 6, or not less than 8.5 and not more than 14. Accordingly, the method for surface treatment of a group III nitride crystal can be provided according to which hard abrasive grains remaining at the lapped crystal can be removed to reduce impurities at the crystal surface.
摘要翻译：用于III族氮化物晶体的表面处理的方法包括以下步骤：使用莫氏硬度高于7的硬磨粒研磨III族氮化物晶体的表面，并且对该组的研磨表面进行无磨粒抛光使用不含磨粒的研磨液的III族氮化物结晶，不含磨粒的研磨液的pH为1以上且6以下，8.5以下且14以下。因此，可以提供III族氮化物晶体的表面处理，根据该III族氮化物晶体的表面处理可以去除在研磨晶体上残留的硬磨粒以减少晶体表面的杂质。

5. 发明申请

US20110049679A1 METHOD OF PROCESSING OF NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR WAFER, METHOD OF PRODUCING NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR DEVICE 失效
标题翻译：氮化物半导体器件的加工方法，氮化物半导体器件，制造氮化物半导体器件和氮化物半导体器件的方法
公开(公告)号：US20110049679A1
公开(公告)日：2011-03-03
申请号：US12940733
申请日：2010-11-05
申请人： Keiji ISHIBASHI , Hidenori Mikami , Naoki Matsumoto
发明人： Keiji ISHIBASHI , Hidenori Mikami , Naoki Matsumoto
IPC分类号： H01L29/04 , H01L21/78
CPC分类号： H01L21/02021 , C30B29/403 , C30B33/00 , H01L24/32 , H01L33/0075 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , Y10S438/928 , Y10S438/959 , Y10S438/977 , H01L2924/00014 , H01L2924/00
摘要： A nitride semiconductor wafer is planar-processed by grinding a bottom surface of the wafer, etching the bottom surface by, e.g., KOH for removing a bottom process-induced degradation layer, chamfering by a rubber whetstone bonded with 100 wt %-60 wt % #3000-#600 diamond granules and 0 wt %-40 wt % oxide granules, grinding and polishing a top surface of the wafer, etching the top surface for eliminating a top process-induced degradation layer and maintaining a 0.5 μm-10 μm thick edge process-induced degradation layer.
摘要翻译：氮化物半导体晶片通过研磨晶片的底面进行平面加工，例如通过KOH去除底部工艺诱导的降解层，蚀刻底面，通过与100重量％-60重量％粘合的橡胶砂轮倒角，＃3000-＃600金刚石颗粒和0重量％-40重量％的氧化物颗粒，研磨和抛光晶片的顶表面，蚀刻顶表面以消除顶部工艺诱导的降解层并保持0.5μm-10μm厚边缘过程诱导的降解层。

6. 发明授权

US07863609B2 Compound semiconductor substrate, semiconductor device, and processes for producing them 有权
标题翻译：复合半导体衬底，半导体器件及其制造方法
公开(公告)号：US07863609B2
公开(公告)日：2011-01-04
申请号：US12753535
申请日：2010-04-02
申请人： Keiji Ishibashi , Fumitake Nakanishi
发明人： Keiji Ishibashi , Fumitake Nakanishi
IPC分类号： H01L21/00 , H01L21/31 , H01L29/786
CPC分类号： C30B29/403 , C30B25/02 , C30B29/406 , C30B33/00 , C30B33/12
摘要： A compound semiconductor substrate 10 according to the present invention is comprised of a Group III nitride and has a surface layer 12 containing a chloride of not less than 200×1010 atoms/cm2 and not more than 12000×1010 atoms/cm2 in terms of Cl and an oxide of not less than 3.0 at % and not more than 15.0 at % in terms of O, at a surface. The inventors conducted elaborate research and newly discovered that when the surface layer 12 at the surface of the compound semiconductor substrate 10 contained the chloride of not less than 200×1010 atoms/cm2 and not more than 12000×1010 atoms/cm2 in terms of Cl and the oxide of not less than 3.0 at % and not more than 15.0 at % in terms of O, Si was reduced at an interface between the compound semiconductor substrate 10 and an epitaxial layer 14 formed thereon and, as a result, the electric resistance at the interface was reduced.
摘要翻译：根据本发明的化合物半导体衬底10由III族氮化物组成，其表面层12含有不低于200×10 10原子/ cm 2且不大于12000×10 10原子/ cm 2的氯化物以及表面为O以上且3.0at％以上且15.0at％以下的氧化物。本发明人进行了详细的研究，并且新发现，当化合物半导体基板10的表面上的表面层12含有不小于200×10 10原子/ cm 2且不大于12000×10 10原子/ cm 2的氯化物时，以Cl 并且氧化物以O计为3.0at％且不大于15.0at％时，在化合物半导体衬底10和形成在其上的外延层14之间的界面处Si还原，结果，电阻在界面缩小。

7. 发明申请

US20100224963A1 COMPOUND SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND PROCESSES FOR PRODUCING THEM 有权
标题翻译：化合物半导体衬底，半导体器件及其制造方法
公开(公告)号：US20100224963A1
公开(公告)日：2010-09-09
申请号：US12753535
申请日：2010-04-02
申请人： Keiji Ishibashi , Fumitake Nakanishi
发明人： Keiji Ishibashi , Fumitake Nakanishi
IPC分类号： H01L29/20 , H01L29/02
CPC分类号： C30B29/403 , C30B25/02 , C30B29/406 , C30B33/00 , C30B33/12
摘要： A compound semiconductor substrate 10 according to the present invention is comprised of a Group III nitride and has a surface layer 12 containing a chloride of not less than 200×1010 atoms/cm2 and not more than 12000×1010 atoms/cm2 in terms of Cl and an oxide of not less than 3.0 at % and not more than 15.0 at % in terms of O, at a surface. The inventors conducted elaborate research and newly discovered that when the surface layer 12 at the surface of the compound semiconductor substrate 10 contained the chloride of not less than 200×1010 atoms/cm2 and not more than 12000×1010 atoms/cm2 in terms of Cl and the oxide of not less than 3.0 at % and not more than 15.0 at % in terms of O, Si was reduced at an interface between the compound semiconductor substrate 10 and an epitaxial layer 14 formed thereon and, as a result, the electric resistance at the interface was reduced.
摘要翻译：根据本发明的化合物半导体衬底10由III族氮化物组成，其表面层12含有不低于200×10 10原子/ cm 2且不大于12000×10 10原子/ cm 2的氯化物以及表面为O以上且3.0at％以上且15.0at％以下的氧化物。本发明人进行了详细的研究，并且新发现，当化合物半导体基板10的表面上的表面层12含有不小于200×10 10原子/ cm 2且不大于12000×10 10原子/ cm 2的氯化物时，以Cl 并且氧化物以O计为3.0at％且不大于15.0at％时，在化合物半导体衬底10和形成在其上的外延层14之间的界面处Si还原，结果，电阻在界面缩小。

8. 发明授权

US07771701B2 Hydrogen atom generation source in vacuum treatment apparatus, and hydrogen atom transportation method 有权
标题翻译：真空处理装置中的氢原子产生源，氢原子输运法
公开(公告)号：US07771701B2
公开(公告)日：2010-08-10
申请号：US11816726
申请日：2005-07-15
申请人： Hironobu Umemoto , Atsushi Masuda , Koji Yoneyama , Keiji Ishibashi , Manabu Ikemoto
发明人： Hironobu Umemoto , Atsushi Masuda , Koji Yoneyama , Keiji Ishibashi , Manabu Ikemoto
IPC分类号： C01B3/02 , B01J19/02 , B05D7/22 , C23C16/22
CPC分类号： C23C16/4404 , H01J37/32477 , H01J37/32871
摘要： In a hydrogen atom generation source in a vacuum treatment apparatus which can effectively inhibit hydrogen atoms from being recombined due to contact with an internal wall surface of a treatment chamber of the vacuum treatment apparatus and an internal wall surface of a transport passage, and being returned into hydrogen molecules, at least a part of a surface facing a space with the hydrogen atom generation source formed therein of a member surrounding the hydrogen atom generation source is coated with SiO2. In a hydrogen atom transportation method for transporting hydrogen atoms generated by the hydrogen atom generation source in the vacuum treatment apparatus to a desired place, the hydrogen atoms are transported via a transport passage whose internal wall surface is coated with SiO2.
摘要翻译：在真空处理装置中的氢原子产生源中，能够有效地抑制氢原子与真空处理装置的处理室的内壁面的接触和输送通路的内壁面的复合，并被返回形成氢分子，其中形成有围绕氢原子产生源的构件的氢原子产生源的面向空间的表面的至少一部分被涂覆有SiO 2。在将真空处理装置中由氢原子产生源产生的氢原子转移到所需位置的氢原子输送方法中，氢原子通过内壁表面被SiO 2涂覆的输送通道输送。

9. 发明申请

US20100068834A1 DAMAGE EVALUATION METHOD OF COMPOUND SEMICONDUCTOR MEMBER, PRODUCTION METHOD OF COMPOUND SEMICONDUCTOR MEMBER, GALLIUM NITRIDE COMPOUND SEMICONDUCTOR MEMBER, AND GALLIUM NITRIDE COMPOUND SEMICONDUCTOR MEMBRANE 失效
标题翻译：化合物半导体器件的损伤评价方法，化合物半导体器件的制造方法，氮化镓化合物半导体器件和氮化镓化合物半导体膜
公开(公告)号：US20100068834A1
公开(公告)日：2010-03-18
申请号：US12622971
申请日：2009-11-20
申请人： Akihiro Hachigo , Takayuki Nishiura , Keiji Ishibashi
发明人： Akihiro Hachigo , Takayuki Nishiura , Keiji Ishibashi
IPC分类号： H01L21/66
CPC分类号： G01N21/211
摘要： A method of evaluating damage of a compound semiconductor member, comprising: a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an optical constant obtained by the spectroscopic ellipsometry measurement.
摘要翻译： 1.一种评价化合物半导体部件的损伤的方法，包括：在所述化合物半导体部件的表面上进行光谱椭圆偏光测定的工序; 以及通过使用通过光谱椭圆偏振测量获得的光学常数的光谱，使用包含对应于化合物半导体部件的带隙的波长的波长带中的光谱来评估化合物半导体部件的表面的损伤的步骤。

10. 发明申请

US20100059759A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FORMING THE SAME 有权
标题翻译：氮化物半导体发光器件及其形成方法
公开(公告)号：US20100059759A1
公开(公告)日：2010-03-11
申请号：US12440643
申请日：2008-04-17
申请人： Katsushi Akita , Takashi Kyono , Keiji Ishibashi , Hitoshi Kasai
发明人： Katsushi Akita , Takashi Kyono , Keiji Ishibashi , Hitoshi Kasai
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/02 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/2009 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： An active layer 17 is provided so as to emit light having a light emission wavelength in the range of 440 to 550 nm. A first conduction type gallium nitride-based semiconductor region 13, the active layer 17, and a second conduction type gallium nitride-based semiconductor region 15 are disposed in a predetermined axis Ax direction. The active layer 17 includes a well layer composed of hexagonal InXGa1-XN (0.16≦X≦0.35, X: strained composition), and the indium composition X is represented by a strained composition. The a-plane of the hexagonal InXGa1-XN is aligned in the predetermined axis Ax direction. The thickness of the well layer is in the range of more than 2.5 nm to 10 nm. When the thickness of the well layer is set to 2.5 nm or more, a light emitting device having a light emission wavelength of 440 nm or more can be formed.
摘要翻译：提供有源层17以发射具有在440至550nm范围内的发光波长的光。第一导电型氮化镓基半导体区域13，有源层17和第二导电型氮化镓基半导体区域15设置在预定的轴线方向。有源层17包括由六方晶系InXGa1-XN（0.16＆nlE; X＆lt; EL; 0.35，X：应变组成）构成的阱层，铟组合物X由应变组成表示。六边形InXGa1-XN的a平面在预定轴Ax方向上对准。阱层的厚度在大于2.5nm至10nm的范围内。当阱层的厚度设定为2.5nm以上时，可以形成发光波长为440nm以上的发光元件。

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