专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08258541B2 Gallium nitride-based compound semiconductor light-emitting device 有权
标题翻译：氮化镓系化合物半导体发光元件
公开(公告)号：US08258541B2
公开(公告)日：2012-09-04
申请号：US12097139
申请日：2006-12-13
申请人： Noritaka Muraki , Hironao Shinohara
发明人： Noritaka Muraki , Hironao Shinohara
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L21/0242 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/32 , H01L33/38
摘要： A gallium nitride-based compound semiconductor light-emitting device including a positive electrode having openings, which is excellent in light extraction efficiency. The gallium nitride-based compound semiconductor light-emitting device includes a substrate; an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer, the layers being formed of a gallium nitride-based compound semiconductor and being stacked in this order on the substrate; a positive electrode which is provided so as to contact the p-type semiconductor layer; and a negative electrode which is provided so as to contact the n-type semiconductor layer, where the positive electrode is a positive electrode having openings, and at least a portion of the surface of the p-type semiconductor layer corresponding to the openings are roughened surface derived from spherical particulates.
摘要翻译：一种氮化镓系化合物半导体发光元件，具有具有开口的正极，光提取效率优异。氮化镓系化合物半导体发光元件包括：基板; n型半导体层，发光层和p型半导体层，所述层由氮化镓系化合物半导体形成，并依次层叠在基板上; 设置为与p型半导体层接触的正极; 以及负极，其设置成与n型半导体层接触，其中正极是具有开口的正极，并且与开口相对应的p型半导体层的表面的至少一部分被粗糙化表面衍生自球形微粒。

2. 发明申请

US20120168782A1 LIGHT EMITTING DIODE, LIGHT EMITTING DIODE LAMP, AND ILLUMINATING APPARATUS 审中-公开
标题翻译：发光二极管，发光二极管灯和照明装置
公开(公告)号：US20120168782A1
公开(公告)日：2012-07-05
申请号：US13395817
申请日：2010-09-13
申请人： Noriyuki Aihara , Ryouichi Takeuchi , Noritaka Muraki
发明人： Noriyuki Aihara , Ryouichi Takeuchi , Noritaka Muraki
IPC分类号： H01L33/30 , H01L33/08
CPC分类号： H01L33/0079 , H01L33/14 , H01L33/20 , H01L33/38 , H01L2224/73265
摘要： Disclosed is a light-emitting diode, which has an infrared emission wavelength of 700 nm or more, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section (7), which includes an activity layer, wherein the activity layer emits infrared light and includes a multilayer including a well layer (12) which is made from a composition expressed by the composition formula of (AlXGa1-X) As (0≦x≦1) and a barrier layer (13); a current diffusion layer (8) formed on the light-emitting section (7); and a functional substrate (3) bonded to the current diffusion layer (8).
摘要翻译：公开了一种发光二极管，其具有700nm以上的红外发射波长，优异的单色特性，高输出和高效率以及优异的耐湿性。发光二极管设置有：发光部（7），其包括活性层，其中活性层发射红外光，并且包括多层，其包括由以下组成表示的阱层（12）制成的多层（Al x Ga 1-x）As（0＆nlE; x＆nlE; 1）和阻挡层（13）的组成式。形成在发光部（7）上的电流扩散层（8）; 和键合到电流扩散层（8）的功能基板（3）。

3. 发明授权

US08115212B2 Positive electrode for semiconductor light-emitting device 有权
标题翻译：半导体发光装置用正极
公开(公告)号：US08115212B2
公开(公告)日：2012-02-14
申请号：US11658352
申请日：2005-07-28
申请人： Hisayuki Miki , Noritaka Muraki , Munetaka Watanabe
发明人： Hisayuki Miki , Noritaka Muraki , Munetaka Watanabe
IPC分类号： H01L27/15 , H01L29/24
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42 , H01L2924/01012 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079
摘要： An object of the present invention is to provide a transparent positive electrode for use in a face-up-type chip which can emit intense light even using a low drive voltage.The inventive positive electrode for a semiconductor light-emitting device comprises a transparent electrode formed on a semiconductor layer and a bonding pad electrode formed on the transparent electrode, wherein the bonding pad electrode has a reflecting layer that is in contact with at least the transparent electrode.
摘要翻译：本发明的目的是提供一种用于面朝上型芯片的透明正极，即使使用低驱动电压也能发出强光。本发明的半导体发光装置用正极包括形成在半导体层上的透明电极和形成在透明电极上的焊盘电极，其中，焊盘电极具有至少与透明电极接触的反射层。

4. 发明授权

US07847314B2 Gallium nitride-based compound semiconductor light-emitting device 有权
标题翻译：氮化镓系化合物半导体发光元件
公开(公告)号：US07847314B2
公开(公告)日：2010-12-07
申请号：US12065970
申请日：2006-09-05
申请人： Hironao Shinohara , Hisayuki Miki , Noritaka Muraki
发明人： Hironao Shinohara , Hisayuki Miki , Noritaka Muraki
IPC分类号： H01L21/20 , H01L21/00
CPC分类号： H01L33/025 , H01L33/0095 , H01L33/32 , H01L33/42
摘要： It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material.
摘要翻译：本发明的目的是提供一种氮化镓系化合物半导体发光元件，该氮化镓系化合物半导体发光元件的光输出效率优异，仅需要低驱动电压（Vf）。本发明的氮化镓系化合物半导体发光元件包括n型半导体层，发光层和由氮化镓系化合物半导体形成的p型半导体层，并依次层叠在基板上，以及分别与p型半导体层和n型半导体层接触的正极和负极，其中在p中存在p型杂质和氢原子共存的区域与正极接触的至少一部分与正极的p型半导体层接触的至少一部分由n型导电透光材料形成。

5. 发明申请

US20100230714A1 METHOD FOR PRODUCING GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE, GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE, AND LAMP USING THE SAME 审中-公开
标题翻译：用于生产基于氮化镓的化合物半导体发光器件，基于氮化镓的化合物半导体发光器件的方法和使用其的灯
公开(公告)号：US20100230714A1
公开(公告)日：2010-09-16
申请号：US12293639
申请日：2007-03-23
申请人： Hironao Shinohara , Noritaka Muraki , Hiroshi Osawa
发明人： Hironao Shinohara , Noritaka Muraki , Hiroshi Osawa
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/007 , H01L33/0095 , H01L33/20 , H01L33/32 , H01L2224/48091 , H01L2224/48257 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A method for producing a gallium nitride based compound semiconductor light emitting device that is excellent in terms of light emission efficiency and is also capable of operating at a low driving voltage, a gallium nitride based compound semiconductor light emitting device, and a lamp using the device are provided, and the method for producing a gallium nitride based compound semiconductor light emitting device includes a first crystal growth step in which an n-type semiconductor layer 13, a light emitting layer 14, and a first p-type semiconductor layer 15 which are formed of a gallium nitride based compound semiconductor are laminated in this order on a substrate 11; and a second crystal growth step in which a second p-type semiconductor layer 16 formed of a gallium nitride based compound semiconductor is further laminated thereon; and also has an uneven pattern forming step in which an uneven pattern is formed on the surface of the first p-type semiconductor layer 15 before the first crystal growth step and after the second crystal growth step; and a heat treatment step in which a heat treatment is carried out after the uneven pattern forming step.
摘要翻译：一种氮化镓系化合物半导体发光元件的制造方法，其在发光效率方面优异且能够以低驱动电压工作，氮化镓系化合物半导体发光元件和使用该装置的灯并且用于制造氮化镓基化合物半导体发光器件的方法包括：第一晶体生长步骤，其中n型半导体层13，发光层14和第一p型半导体层15是由氮化镓系化合物半导体构成的层叠体依次层叠在基板11上; 以及第二晶体生长步骤，其中由氮化镓基化合物半导体形成的第二p型半导体层16进一步层压在其上; 并且还具有在第一晶体生长步骤之前和第二晶体生长步骤之后在第一p型半导体层15的表面上形成凹凸图案的不均匀图案形成步骤; 以及在不均匀图案形成工序之后进行热处理的热处理工序。

6. 发明申请

US20090267103A1 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF 有权
标题翻译：基于氮化镓的化合物半导体发光器件及其生产方法
公开(公告)号：US20090267103A1
公开(公告)日：2009-10-29
申请号：US12065564
申请日：2006-09-05
申请人： Noritaka Muraki , Hironao Shinohara , Hiroshi Osawa
发明人： Noritaka Muraki , Hironao Shinohara , Hiroshi Osawa
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/0062 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2224/49107 , H01L2933/0091 , H01L2924/00014
摘要： The invention provides a gallium nitride based compound semiconductor light emitting device with excellent light extracting efficiency and its production method. A light emitting device, obtained from a gallium nitride based compound semiconductor, includes a substrate; a n-type semiconductor layer 13, a light emitting layer 14, and a p-type semiconductor layer 15, sequentially stacked on a substrate 11; a light-permeable positive electrode 16 stacked on the p-type semiconductor layer 15; a positive electrode bonding pad 17 provided on the light-permeable positive electrode 16; and a negative electrode bonding pad provided 18 on the n-type semiconductor layer 13, wherein a disordered uneven surface formed at least on a part of the surface 15a of the p-type semiconductor layer 15.
摘要翻译：本发明提供了一种具有优异的光提取效率的氮化镓基化合物半导体发光器件及其制造方法。从氮化镓系化合物半导体获得的发光元件包括：基板; 依次层叠在基板11上的n型半导体层13，发光层14和p型半导体层15，层叠在p型半导体层15上的透光性正极16; 设置在透光正极16上的正极焊盘17; 以及在n型半导体层13上设置的负极接合焊盘18，其中至少形成在p型半导体层15的表面15a的一部分上的无序的不平坦表面。

7. 发明申请

US20080315237A1 Gallium Nitride-Based Compound Semiconductor Light Emitting Device 有权
标题翻译：基于氮化镓的复合半导体发光器件
公开(公告)号：US20080315237A1
公开(公告)日：2008-12-25
申请号：US11597413
申请日：2005-05-19
申请人： Koji Kamei , Munetaka Watanabe , Noritaka Muraki , Yasushi Ohno
发明人： Koji Kamei , Munetaka Watanabe , Noritaka Muraki , Yasushi Ohno
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： This gallium nitride-based compound semiconductor light emitting device includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are composed of gallium nitride-based compound semiconductors and are deposited in that order on a substrate, and further includes a negative electrode and a positive electrode that are in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively, wherein the positive electrode has a translucent electrode composed of a three-layer structure including a contact metal layer that contacts at least the p-type semiconductor layer, a current diffusion layer provided on the contact metal layer and having conductivity greater than that of the contact metal layer, and a bonding pad layer provided on the current diffusion layer, and a mixed positive electrode-metal layer including a metal that forms the contact metal layer is present in a positive electrode side surface of the p-type semiconductor layer.
摘要翻译：该氮化镓系化合物半导体发光元件包括由氮化镓系化合物半导体构成的n型半导体层，发光层和p型半导体层，并依次沉积在基板上，并且还包括分别与n型半导体层和p型半导体层接触的负极和正极，其中所述正极具有由包括接触金属的三层结构构成的透光性电极至少与p型半导体层接触的层，设置在接触金属层上并具有大于接触金属层的导电性的电流扩散层，以及设置在电流扩散层上的接合焊盘层，以及混合正极包含形成接触金属层的金属的电极 - 金属层存在于p型半导体的正极侧表面上导体层。

8. 发明授权

US07402830B2 Gallium nitride-based compound semiconductor light-emitting device 失效
标题翻译：氮化镓系化合物半导体发光元件
公开(公告)号：US07402830B2
公开(公告)日：2008-07-22
申请号：US10592759
申请日：2005-03-15
申请人： Munetaka Watanabe , Noritaka Muraki , Yasushi Ohno
发明人： Munetaka Watanabe , Noritaka Muraki , Yasushi Ohno
IPC分类号： H01L29/06
CPC分类号： H01L33/007 , H01L33/0095
摘要： The inventive gallium nitride compound semiconductor light-emitting device comprises a substrate; an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, the layers being successively provided atop the substrate and being formed of a gallium nitride compound semiconductor; a negative electrode provided on the n-type semiconductor layer at a certain portion thereof, the portion being exposed by partial, depthwise removal of the light-emitting layer and the p-type semiconductor layer altogether through reactive ion etching; and a positive electrode provided on the remaining p-type semiconductor layer, wherein the gallium nitride compound semiconductor light-emitting device is produced through reactive ion etching by use of silicon tetrachloride as the sole etching gas.
摘要翻译：本发明的氮化镓化合物半导体发光器件包括衬底; n型半导体层，发光层，p型半导体层，这些层被连续地设置在衬底上并由氮化镓化合物半导体形成; 设置在n型半导体层的某一部分的负极，该部分通过反应离子蚀刻部分地深度地去除发光层和p型半导体层而被曝光; 以及设置在剩余p型半导体层上的正极，其中通过使用四氯化硅作为唯一蚀刻气体通过反应离子蚀刻制造氮化镓系化合物半导体发光器件。

9. 发明申请

US20070187666A1 Gallium nitride-based compound semiconductor light-emitting device 失效
标题翻译：氮化镓系化合物半导体发光元件
公开(公告)号：US20070187666A1
公开(公告)日：2007-08-16
申请号：US10592759
申请日：2005-03-15
申请人： Munetaka Watanabe , Noritaka Muraki , Yasushi Ohno
发明人： Munetaka Watanabe , Noritaka Muraki , Yasushi Ohno
IPC分类号： H01L29/06
CPC分类号： H01L33/007 , H01L33/0095
摘要： An object of the present invention is to provide a gallium nitride compound semiconductor light-emitting device having excellent heat resistance, which device is resistive to an increase in the forward operation voltage (VF) caused by mild heating performed after formation of the light-emitting device (e.g., heating to about 300° C. during mounting of the light-emitting device). The inventive gallium nitride compound semiconductor light-emitting device comprises a substrate; an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, the layers being successively provided atop the substrate and being formed of a gallium nitride compound semiconductor; a negative electrode provided on the n-type semiconductor layer at a certain portion thereof, the portion being exposed by partial, depthwise removal of the light-emitting layer and the p-type semiconductor layer altogether through reactive ion etching; and a positive electrode provided on the remaining p-type semiconductor layer, wherein the gallium nitride compound semiconductor light-emitting device is produced through reactive ion etching by use of silicon tetrachloride as the sole etching gas.
摘要翻译：本发明的目的是提供一种耐热性优异的氮化镓系化合物半导体发光元件，其特征在于，能够抑制由形成发光后的温和加热引起的正向工作电压（VF）的上升装置（例如，在安装发光装置期间加热至约300℃）。本发明的氮化镓化合物半导体发光器件包括衬底; n型半导体层，发光层，p型半导体层，这些层被连续地设置在衬底上并由氮化镓化合物半导体形成; 设置在n型半导体层的某一部分的负极，该部分通过反应离子蚀刻部分地深度地去除发光层和p型半导体层而被曝光; 以及设置在剩余p型半导体层上的正极，其中通过使用四氯化硅作为唯一蚀刻气体通过反应离子蚀刻制造氮化镓系化合物半导体发光器件。

10. 发明申请

US20070040183A1 Gallium nitride-based compound semiconductor light-emitting device and electrode for the same 失效
标题翻译：氮化镓系化合物半导体发光元件及其电极
公开(公告)号：US20070040183A1
公开(公告)日：2007-02-22
申请号：US10572680
申请日：2004-09-21
申请人： Hideki Tomozawa , Mineo Okuyama , Noritaka Muraki , Soichiro Masuyama
发明人： Hideki Tomozawa , Mineo Okuyama , Noritaka Muraki , Soichiro Masuyama
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42
摘要： An object of the present invention is to provide a light-permeable electrode for use in a gallium nitride-based compound semiconductor light-emitting device, the electrode having improved light permeability and contact resistance. The inventive electrode comprises a light-permeable first layer which is in contact with a surface of a p-contact layer in a gallium nitride-based compound semiconductor light-emitting device and which is capable of providing ohmic contact, and a second layer which is in contact with a part of a surface of said p-contact layer, wherein the first layer comprises a metal, or an alloy of two or more metals, selected from a first group consisting of Au, Pt, Pd, Ni, Co, and Rh, and the second layer comprises an oxide of at least one metal selected from a second group consisting of Ni, Ti, Sn, Cr, Co, Zn, Cu, Mg, and In.
摘要翻译：本发明的目的是提供一种用于氮化镓基化合物半导体发光器件的透光电极，该电极具有改善的透光性和接触电阻。本发明的电极包括与氮化镓基化合物半导体发光器件中的p接触层的表面接触并且能够提供欧姆接触的透光性第一层，并且第二层是与所述p接触层的表面的一部分接触，其中所述第一层包含金属或两种或更多种金属的合金，所述金属选自Au，Pt，Pd，Ni，Co和 Rh，并且第二层包含选自由Ni，Ti，Sn，Cr，Co，Zn，Cu，Mg和In组成的第二组中的至少一种金属的氧化物。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式