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1. 发明申请

US20120168782A1 LIGHT EMITTING DIODE, LIGHT EMITTING DIODE LAMP, AND ILLUMINATING APPARATUS 审中-公开
标题翻译：发光二极管，发光二极管灯和照明装置
公开(公告)号：US20120168782A1
公开(公告)日：2012-07-05
申请号：US13395817
申请日：2010-09-13
申请人： Noriyuki Aihara , Ryouichi Takeuchi , Noritaka Muraki
发明人： Noriyuki Aihara , Ryouichi Takeuchi , Noritaka Muraki
IPC分类号： H01L33/30 , H01L33/08
CPC分类号： H01L33/0079 , H01L33/14 , H01L33/20 , H01L33/38 , H01L2224/73265
摘要： Disclosed is a light-emitting diode, which has an infrared emission wavelength of 700 nm or more, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section (7), which includes an activity layer, wherein the activity layer emits infrared light and includes a multilayer including a well layer (12) which is made from a composition expressed by the composition formula of (AlXGa1-X) As (0≦x≦1) and a barrier layer (13); a current diffusion layer (8) formed on the light-emitting section (7); and a functional substrate (3) bonded to the current diffusion layer (8).
摘要翻译：公开了一种发光二极管，其具有700nm以上的红外发射波长，优异的单色特性，高输出和高效率以及优异的耐湿性。发光二极管设置有：发光部（7），其包括活性层，其中活性层发射红外光，并且包括多层，其包括由以下组成表示的阱层（12）制成的多层（Al x Ga 1-x）As（0＆nlE; x＆nlE; 1）和阻挡层（13）的组成式。形成在发光部（7）上的电流扩散层（8）; 和键合到电流扩散层（8）的功能基板（3）。

2. 发明授权

US09299885B2 Light-emitting diode, light-emitting diode lamp, and illumination device 有权
标题翻译：发光二极管，发光二极管灯和照明装置
公开(公告)号：US09299885B2
公开(公告)日：2016-03-29
申请号：US13990653
申请日：2011-11-30
申请人： Noriyuki Aihara
发明人： Noriyuki Aihara
IPC分类号： H01L29/06 , H01L21/00 , H01L33/06 , H01L33/32 , H01L33/20 , H01L33/38
CPC分类号： H01L33/06 , H01L33/20 , H01L33/325 , H01L33/38 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： The invention provides a light-emitting diode, a light-emitting diode lamp, and an illumination device which emit infrared light with both high-speed response and high output performance. The invention relates to a light-emitting diode including a light-emitting portion which has an active layer of a quantum well structure, in which a well layer made of a compound semiconductor having a composition formula (InX1Ga1-X1)As (0≦X1≦1) and a barrier layer made of a compound semiconductor having a composition formula (AlX2Ga1-X2)As (0≦X2≦1) are alternately laminated, and a first clad layer and a second clad layer sandwiching the active layer, an electric current diffusion layer which is formed on the light-emitting portion, and a functional substrate which is bonded to the electric current diffusion layer, a light-emitting diode lamp, and an illumination device. The first and second clad layers are made of a compound semiconductor having a composition formula (AlX3Ga1-X3)Y1In1-Y1P (0≦X3≦1, 0
摘要翻译：本发明提供一种发光二极管，发光二极管灯，以及以高速响应和高输出性能发射红外光的照明装置。本发明涉及一种发光二极管，其包括具有量子阱结构的有源层的发光部分，其中由具有组成式（InX1Ga1-X1）As（0＆nlE; X1＆n1E）的化合物半导体制成的阱层 ; 1）和具有组成式（Al x 2 Ga 1-x 2）的化合物半导体（0＆amp; NlE; X2＆nlE; 1）的阻挡层交替层叠，并且第一覆盖层和夹着有源层的第二覆盖层，电形成在发光部上的电流扩散层和与电流扩散层接合的功能基板，发光二极管灯和照明装置。第一和第二包层由具有组成式（AlX 3 Ga 1-x 3）Y1In1-Y1P（0＆nlE; X3＆nlE; 1,0

3. 发明申请

US20120305890A1 LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE LAMP AND LIGHTING DEVICE 有权
标题翻译：发光二极管，发光二极管灯和照明装置
公开(公告)号：US20120305890A1
公开(公告)日：2012-12-06
申请号：US13574894
申请日：2011-01-20
申请人： Noriyuki Aihara , Noriyoshi Seo , Noritaka Muraki
发明人： Noriyuki Aihara , Noriyoshi Seo , Noritaka Muraki
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/10 , H01L33/30 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting diode, including a light emitting section including an active layer having a quantum well structure in which well layers having the composition: (InX1Ga1-X1)As (0≦X1≦1) and barrier layers having the composition: (AlX2Ga1-X2)As (0≦X2≦1) are alternately laminated, first guide and second guide layers paired to sandwich the active layer and having the composition: (AlX3Ga1-X3)As (0≦X3≦1), and first cladding and second cladding layers paired to sandwich the active layer via the first guide layer and the second guide layer, respectively; a current diffusion layer formed on the light emitting section; and a functional substrate bonded to the current diffusion layer; wherein the first cladding layer and the second cladding layer have the composition: (AlX4Ga1-X4)YIn1-YP (0≦X4≦1, 0
摘要翻译：一种发光二极管，包括具有量子阱结构的有源层的发光部分，其中具有组成为（InX1Ga1-X1）As（0＆n1E; X1＆n1E; 1）的阱层和具有组成为（AlX 2 Ga 1 -X2）As（0＆nlE; X2＆nlE; 1）交替层叠，第一引导层和第二引导层成对夹持有源层，并具有以下成分：（AlX 3 Ga 1-x 3）As（0＆lt; N 1; X 3＆配对的第二包层分别经由第一引导层和第二引导层夹持有源层; 形成在发光部上的电流扩散层; 以及键合到所述电流扩散层的功能性基板; 其特征在于，所述第一包层和所述第二包层的组成如下：（AlX 4 Ga 1-X 4）Y In 1-Y P（0＆nl E; X 4＆lt; 1; 0

4. 发明申请

US20130248819A1 LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE LAMP, AND ILLUMINATION DEVICE 有权
标题翻译：发光二极管，发光二极管灯和照明装置
公开(公告)号：US20130248819A1
公开(公告)日：2013-09-26
申请号：US13990653
申请日：2011-11-30
申请人： Noriyuki Aihara
发明人： Noriyuki Aihara
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , H01L33/20 , H01L33/325 , H01L33/38 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： The invention provides a light-emitting diode, a light-emitting diode lamp, and an illumination device which emit infrared light with both high-speed response and high output performance. The invention relates to a light-emitting diode including a light-emitting portion which has an active layer of a quantum well structure, in which a well layer made of a compound semiconductor having a composition formula (InX1Ga1-X1)As (0≦X1≦1) and a barrier layer made of a compound semiconductor having a composition formula (AlX2Ga1-X2)As (0≦X2≦1) are alternately laminated, and a first clad layer and a second clad layer sandwiching the active layer, an electric current diffusion layer which is formed on the light-emitting portion, and a functional substrate which is bonded to the electric current diffusion layer, a light-emitting diode lamp, and an illumination device. The first and second clad layers are made of a compound semiconductor having a composition formula (AlX3Ga1-X3)Y1In1-Y1P (0≦X3≦1, 0
摘要翻译：本发明提供一种发光二极管，发光二极管灯，以及以高速响应和高输出性能发射红外光的照明装置。本发明涉及包括具有量子阱结构的有源层的发光部分的发光二极管，其中由具有组成式（InX1Ga1-X1）As（0 @ X1）的化合物半导体制成的阱层（1））和由具有组成式（Al x Ga 1-x 2）2 As（O 2 X 2））的化合物半导体制成的阻挡层交替层叠，并且夹着有源层的第一覆盖层和第二覆盖层，形成在发光部上的电流扩散层和与电流扩散层接合的功能基板，发光二极管灯和照明装置。第一和第二包层由具有组成式（AlX 3 Ga 1-x 3）Y1In1-Y1P（0≤X3≤1,0

5. 发明授权

US08754398B2 Light-emitting diode, light-emitting diode lamp and lighting device 有权
标题翻译：发光二极管，发光二极管灯和照明装置
公开(公告)号：US08754398B2
公开(公告)日：2014-06-17
申请号：US13574894
申请日：2011-01-20
申请人： Noriyuki Aihara , Noriyoshi Seo , Noritaka Muraki
发明人： Noriyuki Aihara , Noriyoshi Seo , Noritaka Muraki
IPC分类号： H01L29/06 , H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L33/06 , H01L33/10 , H01L33/30 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting diode, including a light emitting section including an active layer having a quantum well structure in which well layers having the composition: (InX1Ga1-X1)As (0≦X1≦1) and barrier layers having the composition: (AlX2Ga1-X2)As (0≦X2≦1) are alternately laminated, first guide and second guide layers paired to sandwich the active layer and having the composition: (AlX3Ga1-X3)As (0≦X3≦1), and first cladding and second cladding layers paired to sandwich the active layer via the first guide layer and the second guide layer, respectively; a current diffusion layer formed on the light emitting section; and a functional substrate bonded to the current diffusion layer; wherein the first cladding layer and the second cladding layer have the composition: (AlX4Ga1-X4)YIn1-YP (0≦X4≦1, 0
摘要翻译：一种发光二极管，包括具有量子阱结构的有源层的发光部分，其中具有组成为（InX1Ga1-X1）As（0＆n1E; X1＆n1E; 1）的阱层和具有组成为（AlX 2 Ga 1 -X2）As（0＆nlE; X2＆nlE; 1）交替层叠，第一引导层和第二引导层成对夹持有源层，并具有以下成分：（AlX 3 Ga 1-x 3）As（0＆lt; N 1; X 3＆配对的第二包层分别经由第一引导层和第二引导层夹持有源层; 形成在发光部上的电流扩散层; 以及键合到所述电流扩散层的功能性基板; 其特征在于，所述第一包层和所述第二包层的组成如下：（AlX 4 Ga 1-X 4）Y In 1-Y P（0＆nl E; X 4＆lt; 1; 0

6. 发明授权

US08659004B2 Light emitting diode, light emitting diode lamp, and illuminating apparatus 有权
标题翻译：发光二极管，发光二极管灯和照明装置
公开(公告)号：US08659004B2
公开(公告)日：2014-02-25
申请号：US13496083
申请日：2010-09-15
申请人： Noriyuki Aihara , Noriyoshi Seo , Noritaka Muraki , Ryouichi Takeuchi
发明人： Noriyuki Aihara , Noriyoshi Seo , Noritaka Muraki , Ryouichi Takeuchi
IPC分类号： H01L31/00
CPC分类号： H01L33/06 , H01L24/45 , H01L33/0079 , H01L33/12 , H01L33/14 , H01L33/30 , H01L2224/05554 , H01L2224/05555 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/10158 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (AlX1 Ga1-X1) As (0≦X1≦1) and a barrier layer which comprises a composition expressed by the composition formula of (AlX2 Ga1-X2) As (0
摘要翻译：公开了一种发光二极管，其具有红色和红外发射波长，优异的单色特性，高输出和高效率以及优异的耐湿性。发光二极管设置有：发光部，其包括具有量子阱结构的有源层，并且交替地层叠由包含由（AlX 1 Ga 1-X1）As的组成式表示的组成的阱层（0 @ X1 @ 1）和阻挡层，其包含由组成式表示的组成式（AlX 2 Ga 1 -X 2）As（0 <2），以及第一覆盖层和第二覆盖层，两者之间其中所述有源层被夹持，其中所述第一覆盖层和所述第二覆盖层包含由组成式表示的组成式（AlX 3 Ga 1-x）Y1 In1-Y1 P（0≤X3≤1,0

7. 发明申请

US20130134390A1 LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE LAMP, AND ILLUMINATION DEVICE 审中-公开
标题翻译：发光二极管，发光二极管灯和照明装置
公开(公告)号：US20130134390A1
公开(公告)日：2013-05-30
申请号：US13814858
申请日：2011-08-10
申请人： Noriyuki Aihara
发明人： Noriyuki Aihara
IPC分类号： H01L33/04
CPC分类号： H01L33/04 , H01L33/0079 , H01L33/06 , H01L33/30 , H01L33/38 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting diode of the present invention includes a light-emitting unit, containing an active layer having a quantum well structure prepared by alternately stacking a well layer and a barrier layer each formed from a compound semiconductor having a composition formula of (AlX1Ga1-X1)As (wherein 0≦X1≦1), and a first cladding layer and a second cladding layer that sandwich the active layer, a current diffusion layer formed on the light-emitting unit, and a functional substrate bonded to the current diffusion layer, wherein the first cladding layer and the second cladding layer are formed from a compound semiconductor having a composition formula of (AlX2Ga1-X2)Y1In1-Y1P (wherein 0≦X2≦1 and 0≦Y1≦1), and the number of pairs of the well layer and the barrier layer is not more than five.
摘要翻译：本发明的发光二极管包括发光单元，该发光单元含有具有量子阱结构的有源层，该有源层通过交替层叠阱层和阻挡层而制备，所述阱层和阻挡层由具有组成式（AlX1Ga1- X1）As（其中，X1≤1）以及夹着有源层的第一覆层和第二覆层，形成在发光单元上的电流扩散层和与电流扩散层接合的功能基板其中，所述第一包覆层和所述第二覆盖层由具有式（AlX2Ga1-X2）Y1In1-Y1P（其中，0 @ X2 @ 1和0 @ Y1 @ 1）的组成式的化合物半导体和配对数的阱层和阻挡层不超过5个。

8. 发明申请

US20120168717A1 LIGHT EMITTING DIODE, LIGHT EMITTING DIODE LAMP, AND ILLUMINATING APPARATUS 有权
标题翻译：发光二极管，发光二极管灯和照明装置
公开(公告)号：US20120168717A1
公开(公告)日：2012-07-05
申请号：US13496083
申请日：2010-09-15
申请人： Noriyuki Aihara , Noriyoshi Seo , Noritaka Muraki , Ryouichi Takeuchi
发明人： Noriyuki Aihara , Noriyoshi Seo , Noritaka Muraki , Ryouichi Takeuchi
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , H01L24/45 , H01L33/0079 , H01L33/12 , H01L33/14 , H01L33/30 , H01L2224/05554 , H01L2224/05555 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/10158 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (AlX1Ga1-X1)As (0≦X1≦1) and a barrier layer which comprises a composition expressed by the composition formula of (AlX2Ga1-X2)As (0
摘要翻译：公开了一种发光二极管，其具有红色和红外发射波长，优异的单色特性，高输出和高效率以及优异的耐湿性。发光二极管设置有：发光部，其包括具有量子阱结构的有源层，并且交替地层叠由包含由（AlX1Ga1-X1）As（式中， 0＆lt; X1＆nlE; 1）和包含由组成式表示的组成式（Al x 2 Ga 1-x 2）As（0

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