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1. 发明授权

US09839731B2 Light-based accessory apparatuses for breast pumps 有权
公开(公告)号：US09839731B2
公开(公告)日：2017-12-12
申请号：US14187603
申请日：2014-02-24
申请人： Patrick Martin O'Malley , Michael David Horning
发明人： Patrick Martin O'Malley , Michael David Horning
IPC分类号： A61F5/44 , A61M1/06 , A61B10/00 , F21V33/00 , F21V21/00 , F21V14/02 , A61N5/06 , F21V23/04 , A61N2/06 , A61B90/30 , A61B5/00 , A61B17/30 , F21V21/092
CPC分类号： A61M1/062 , A61B5/4312 , A61B90/30 , A61B2017/308 , A61M1/06 , A61M1/064 , A61M2205/587 , A61N2/06 , A61N5/0616 , A61N2005/0645 , A61N2005/0652 , A61N2005/066 , A61N2005/0663 , F21V14/02 , F21V21/0925 , F21V23/04 , F21V23/0464 , F21V33/0048
摘要： An improved accessory light for breast pumps apparatus is described. This improved accessory light for breast pumps apparatus may be secured or affixed to various models of breast pumps to allow the user to have a hands-free, illuminated view of the milk being expressed from the breast. The accessory light may consist of a clamp-based accessory secured to a breast shield neck or an accessory that is secured to the breast shield back using a flexible material.

2. 发明授权

US08703653B2 Quantitative, highly multiplexed detection of nucleic acids 有权
标题翻译：定量，高度多重检测核酸
公开(公告)号：US08703653B2
公开(公告)日：2014-04-22
申请号：US13587883
申请日：2012-08-16
申请人： Kris Scaboo , Patrick Martin , Brad Taft , Jason La
发明人： Kris Scaboo , Patrick Martin , Brad Taft , Jason La
IPC分类号： C12Q1/68 , C40B30/04 , G01N21/64
CPC分类号： C12Q1/6837 , G01N21/6428 , G01N2021/6419 , G01N2021/6421 , G01N2021/6432
摘要： This invention provides methods of detecting and quantifying target nucleic acids in samples in multiplexed single chamber reactions. Consumables incorporating chambers optimized to reduce signal background proximal to high efficiency arrays are provided, as well as methods of use. Devices and systems configured to use the consumables to practice the methods are a feature of the invention.
摘要翻译：本发明提供在多重单室反应中检测和定量样品中靶核酸的方法。提供了包含优化以减少靠近高效率阵列的信号背景的腔室的消耗品以及使用方法。配置为使用消耗品来实施该方法的设备和系统是本发明的特征。

3. 发明授权

US08513713B2 Junction field effect transistor with region of reduced doping 有权
标题翻译：具有减少掺杂区域的结场效应晶体管
公开(公告)号：US08513713B2
公开(公告)日：2013-08-20
申请号：US13468809
申请日：2012-05-10
申请人： Paul Malachy Daly , Andrew David Bain , Derek Frederick Bowers , Anne Maria Deignan , Michael Thomas Dunbar , Patrick Martin McGuinness , Bernard Patrick Stenson , William Allan Lane
发明人： Paul Malachy Daly , Andrew David Bain , Derek Frederick Bowers , Anne Maria Deignan , Michael Thomas Dunbar , Patrick Martin McGuinness , Bernard Patrick Stenson , William Allan Lane
IPC分类号： H01L29/80
CPC分类号： H01L29/808 , H01L29/0843 , H01L29/66901
摘要： A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.
摘要翻译：具有漏极和源极的结型场效应晶体管，每个由通过沟道互连的第一类型半导体的区域限定，并且其中面向沟道的漏极侧的掺杂剂分布被修改以提供区域与漏极的体区相比减少掺杂。减少掺杂的区域和体区可以通过相同的掩模和掺杂步骤来限定，但是掩模被成形为为减少掺杂的区域提供较少量的掺杂深度。

4. 发明授权

US08263469B2 Methods of forming a bipolar transistor 有权
标题翻译：形成双极晶体管的方法
公开(公告)号：US08263469B2
公开(公告)日：2012-09-11
申请号：US13267780
申请日：2011-10-06
申请人： Bernard Patrick Stenson , Andrew David Bain , Derek Frederick Bowers , Paul Malachy Daly , Anne Maria Deignan , Michael Thomas Dunbar , Patrick Martin McGuiness , William Allan Lane
发明人： Bernard Patrick Stenson , Andrew David Bain , Derek Frederick Bowers , Paul Malachy Daly , Anne Maria Deignan , Michael Thomas Dunbar , Patrick Martin McGuiness , William Allan Lane
IPC分类号： H01L21/8228
CPC分类号： H01L29/0821 , H01L21/8222 , H01L29/66272 , H01L29/7317 , H01L29/7322
摘要： A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.
摘要翻译：一种双极晶体管，包括集电极，基极和发射极，其中集电极包括相对重掺杂的区域，以及与基极相邻的较轻掺杂的区域，并且其中相对重掺杂的区域基本上从本征区域中省略的晶体管。

5. 发明授权

US08120136B2 Bipolar transistor 有权
公开(公告)号：US08120136B2
公开(公告)日：2012-02-21
申请号：US12611074
申请日：2009-11-02
申请人： William Allan Lane , Andrew David Bain , Derek Frederick Bowers , Paul Malachy Daly , Anne Maria Deignan , Michael Thomas Dunbar , Patrick Martin McGuiness , Bernard Patrick Stenson
发明人： William Allan Lane , Andrew David Bain , Derek Frederick Bowers , Paul Malachy Daly , Anne Maria Deignan , Michael Thomas Dunbar , Patrick Martin McGuiness , Bernard Patrick Stenson
IPC分类号： H01L29/02
摘要： A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.

6. 发明授权

US08019015B2 Linearization of RF power amplifiers using an adaptive subband predistorter 有权
标题翻译：使用自适应子带预失真器对RF功率放大器进行线性化
公开(公告)号：US08019015B2
公开(公告)日：2011-09-13
申请号：US11678847
申请日：2007-02-26
申请人： Christopher D. Moffatt , G. Patrick Martin , James Tonti
发明人： Christopher D. Moffatt , G. Patrick Martin , James Tonti
IPC分类号： H04K1/02 , H04L25/03 , H04L25/49
CPC分类号： H03F1/3247 , H03F1/3294 , H03F3/24
摘要： Predistorting an input signal prior to amplification in an RF power amplifier (206) includes isolating a plurality sub-band signals, each representing a portion of the input signal s(t). The method includes independently modifying an amplitude and a phase of each of the plurality of sub-band signals. The modification of the amplitude and/or phase is performed using a set of signal weighting parameters (weights) w and W, controlling linear and nonlinear modifications respectively, which are determined in an adaptive process by an adaptive controller (224). After modification, each of the sub-bands are summed together to obtain a predistorted input signal for an RF power amplifier (206).
摘要翻译：在RF功率放大器（206）中放大之前预失真输入信号包括隔离多个子带信号，每个子带信号表示输入信号s（t）的一部分。该方法包括独立地修改多个子带信号中的每一个的振幅和相位。使用一组信号加权参数（权重）w和W来执行幅度和/或相位的修改，分别控制在自适应控制器（224）的自适应处理中确定的线性和非线性修改。在修改之后，将每个子带相加在一起以获得用于RF功率放大器（206）的预失真输入信号。

7. 发明申请

US20110101486A1 BIPOLAR TRANSISTOR 有权
标题翻译：双极晶体管
公开(公告)号：US20110101486A1
公开(公告)日：2011-05-05
申请号：US12611074
申请日：2009-11-02
申请人： William Allan Lane , Andrew David Bain , Derek Frederick Bowers , Paul Malachy Daly , Anne Maria Deignan , Michael Thomas Dunbar , Patrick Martin McGuiness , Bernard Patrick Stenson
发明人： William Allan Lane , Andrew David Bain , Derek Frederick Bowers , Paul Malachy Daly , Anne Maria Deignan , Michael Thomas Dunbar , Patrick Martin McGuiness , Bernard Patrick Stenson
IPC分类号： H01L29/06 , H01L29/73 , H01L21/331
CPC分类号： H01L29/7322 , H01L21/76283 , H01L29/0619 , H01L29/402 , H01L29/66272
摘要： A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.
摘要翻译：包括发射极区域，基极区域和集电极区域的双极晶体管以及与基极隔开并围绕基极的保护区域。保护区域可以形成在形成基底的相同步骤中，并且可以用于在操作中扩散耗尽层。

8. 发明申请

US20110101424A1 JUNCTION FIELD EFFECT TRANSISTOR 有权
标题翻译：连接场效应晶体管
公开(公告)号：US20110101424A1
公开(公告)日：2011-05-05
申请号：US12611052
申请日：2009-11-02
申请人： Paul Malachy Daly , Andrew David Bain , Derek Frederick Bowers , Anne Maria Deignan , Michael Thomas Dunbar , Patrick Martin McGuinness , Bernard Patrick Stenson , William Allan Lane
发明人： Paul Malachy Daly , Andrew David Bain , Derek Frederick Bowers , Anne Maria Deignan , Michael Thomas Dunbar , Patrick Martin McGuinness , Bernard Patrick Stenson , William Allan Lane
IPC分类号： H01L29/808 , H01L21/337
CPC分类号： H01L29/808 , H01L29/0843 , H01L29/66901
摘要： A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.
摘要翻译：具有漏极和源极的结型场效应晶体管，每个由通过沟道互连的第一类型半导体的区域限定，并且其中面向沟道的漏极侧的掺杂剂分布被修改以提供区域与漏极的体区相比减少掺杂。减少掺杂的区域和体区可以通过相同的掩模和掺杂步骤来限定，但是掩模被成形为为减少掺杂的区域提供较少量的掺杂深度。

9. 发明申请

US20110101423A1 JUNCTION FIELD EFFECT TRANSISTOR 有权
标题翻译：连接场效应晶体管
公开(公告)号：US20110101423A1
公开(公告)日：2011-05-05
申请号：US12611055
申请日：2009-11-02
申请人： Derek Frederick Bowers , Andrew David Bain , Paul Malachy Daly , Anne Maria Deignan , Michael Thomas Dunbar , Patrick Martin McGuinness , Bernard Patrick Stenson , William Allan Lane
发明人： Derek Frederick Bowers , Andrew David Bain , Paul Malachy Daly , Anne Maria Deignan , Michael Thomas Dunbar , Patrick Martin McGuinness , Bernard Patrick Stenson , William Allan Lane
IPC分类号： H01L29/80 , H01L21/335
CPC分类号： H01L29/808 , H01L29/0843 , H01L29/66901
摘要： A field effect transistor having a drain, a gate and a source, where the drain and source are formed by semiconductor regions of a first type, and in which a further doped region is provided intermediate the gate and the drain. Field gradients around the drain are thereby reduced.
摘要翻译：一种具有漏极，栅极和源极的场效应晶体管，其中漏极和源极由第一类型的半导体区域形成，并且其中在栅极和漏极之间设置另外的掺杂区域。从而减少排水管周围的场梯度。

10. 发明授权

US07855681B2 Systems and methods for determining element phase center locations for an array of antenna elements 有权
标题翻译：用于确定天线元件阵列的元件相位中心位置的系统和方法
公开(公告)号：US07855681B2
公开(公告)日：2010-12-21
申请号：US12273981
申请日：2008-11-19
申请人： Kathleen Minear , G. Patrick Martin
发明人： Kathleen Minear , G. Patrick Martin
IPC分类号： H01Q3/00
CPC分类号： H01Q1/246 , H01Q3/26 , H01Q3/267 , H04B7/084 , H04B7/086 , H04B17/21
摘要： A method for operating a communications system is provided. The method includes receiving a plurality of signals at a plurality of antenna elements, the plurality of signals arriving at the array of antenna elements at a plurality of angles of arrival (AOAs) with respect to a reference location. The method also includes calculating a plurality of differential distance vectors between the plurality of antenna elements and the reference location, each of the plurality of differential distance vectors associated with one of the plurality of AOAs and at least one of the pluralities of signals. The method further includes obtaining a plurality of actual phase center locations for the plurality of antenna elements based on the plurality of differential distance vectors and the plurality of AOAs and providing a correction to configuration data for the array of antenna elements based at least on the plurality of actual phase center locations.
摘要翻译：提供了一种用于操作通信系统的方法。该方法包括在多个天线元件处接收多个信号，该多个信号以相对于参考位置的多个到达角（AOA）到达天线元件阵列。所述方法还包括计算多个天线元件与参考位置之间的多个差分距离矢量，所述多个差分距离矢量中的每一个与所述多个AOA中的一个和所述多个信号中的至少一个相关联。该方法还包括基于多个差分距离向量和多个AOA获得多个天线元件的多个实际相位中心位置，并且至少基于多个天线元件为天线元件阵列提供对配置数据的校正的实际相位中心位置。

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