专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08780640B2 System and method to enable reading from non-volatile memory devices 有权
标题翻译：允许从非易失性存储器件读取的系统和方法
公开(公告)号：US08780640B2
公开(公告)日：2014-07-15
申请号：US13331405
申请日：2011-12-20
申请人： Paul F. Ruths
发明人： Paul F. Ruths
IPC分类号： G11C16/28
CPC分类号： G11C16/26 , G11C16/20
摘要： A system and method to enable reading from non-volatile memory (NVM) devices is described. In one embodiment, the method includes setting a sensing parameter used to read data stored in a NVM device, reading from pluralities of locations of the NVM device with the sensing parameter set at the first value. The locations of the NVM device store an identical value. The method also includes verifying whether the identical value is read correctly from the locations of the NVM device. The method also includes setting the sensing parameter to a second value when the identical value is not read correctly with the sensing parameter set at the first value. The method further includes determining a third value for the sensing parameter from the identical value and setting the sensing parameter to the third value when the identical value is read correctly.
摘要翻译：描述了从非易失性存储器（NVM）设备读取的系统和方法。在一个实施例中，该方法包括设置用于读取存储在NVM设备中的数据的感测参数，用设置为第一值的感测参数读取NVM设备的多个位置。 NVM设备的位置存储相同的值。该方法还包括验证从NVM设备的位置是否正确读取相同的值。该方法还包括当感测参数设置为第一值时，将相同的值未正确读取时，将感测参数设置为第二值。该方法还包括从相同值确定感测参数的第三值，并在正确读取相同值时将感测参数设置为第三值。

2. 发明申请

US20130141983A1 SYSTEM AND METHOD TO ENABLE READING FROM NON-VOLATILE MEMORY DEVICES 有权
标题翻译：非易失性存储器件读取的系统和方法
公开(公告)号：US20130141983A1
公开(公告)日：2013-06-06
申请号：US13331405
申请日：2011-12-20
申请人： Paul F. Ruths
发明人： Paul F. Ruths
IPC分类号： G11C16/26
CPC分类号： G11C16/26 , G11C16/20
摘要： A system and method to enable reading from non-volatile memory (NVM) devices is described. In one embodiment, the method includes setting a sensing parameter used to read data stored in a NVM device, reading from pluralities of locations of the NVM device with the sensing parameter set at the first value. The locations of the NVM device store an identical value. The method also includes verifying whether the identical value is read correctly from the locations of the NVM device. The method also includes setting the sensing parameter to a second value when the identical value is not read correctly with the sensing parameter set at the first value. The method further includes determining a third value for the sensing parameter from the identical value and setting the sensing parameter to the third value when the identical value is read correctly.
摘要翻译：描述了从非易失性存储器（NVM）设备读取的系统和方法。在一个实施例中，该方法包括设置用于读取存储在NVM设备中的数据的感测参数，用设置为第一值的感测参数读取NVM设备的多个位置。 NVM设备的位置存储相同的值。该方法还包括验证从NVM设备的位置是否正确读取相同的值。该方法还包括当感测参数设置为第一值时，将相同的值未正确读取时，将感测参数设置为第二值。该方法还包括从相同值确定感测参数的第三值，并在正确读取相同值时将感测参数设置为第三值。

3. 发明授权

US6097629A Non-volatile, static random access memory with high speed store capability 有权
标题翻译：具有高速存储功能的非易失性，静态随机存取存储器
公开(公告)号：US6097629A
公开(公告)日：2000-08-01
申请号：US164531
申请日：1998-09-30
申请人： Daryl G. Dietrich , Paul F. Ruths , Christian E. Herdt
发明人： Daryl G. Dietrich , Paul F. Ruths , Christian E. Herdt
IPC分类号： G11C11/412 , G11C11/40
CPC分类号： G11C11/4125
摘要： The invention relates to a non-volatile, static random access memory (nvSRAM) device that is capable of high speed copying of the data in the static random access portion of the device into the non-volatile portion of the device after the detection of possible loss of power. This is accomplished by preparing the non-volatile portion for receiving a bit of data from the SRAM portion before the possible loss of power is detected, i.e., pre-arming the device. In one embodiment, the pre-arming is accomplished by erasing the non-volatile portion during the time when the power supply is stable and data can be transferred between the SRAM portion and the exterior environment. In another embodiment, pre-arming is accomplished by erasing the non-volatile portion immediately after power has been provided to the device and data from the non-volatile portion has been copied into the SRAM in a recall operation. Another aspect of the invention provides for the decoupling of the erase and store operations. This facilitate, for example, the erase of the data in the non-volatile portion of the nvSRAM without a subsequent copying of data in the SRAM portion into the non-volatile portion.
摘要翻译：本发明涉及一种非易失性静态随机存取存储器（nvSRAM）装置，其能够在检测到可能的情况下将设备的静态随机存取部分中的数据高速复制到装置的非易失性部分权力丧失这是通过在检测到可能的功率损失之前准备用于从SRAM部分接收一位数据的非易失性部分来实现的，即预设装置。在一个实施例中，通过在电源稳定的时间期间擦除非易失性部分并且可以在SRAM部分和外部环境之间传输数据来实现预布防。在另一个实施例中，通过在向设备提供电源之后立即擦除非易失性部分并且通过回调操作将来自非易失性部分的数据复制到SRAM中来实现预布防。本发明的另一方面提供了擦除和存储操作的去耦合。这有助于例如擦除nvSRAM的非易失性部分中的数据，而不会随后将SRAM部分中的数据复制到非易失性部分中。

4. 发明授权

US6026018A Non-volatile, static random access memory with store disturb immunity 有权
标题翻译：非易失性，静态随机存取存储器具有商店抗干扰能力
公开(公告)号：US6026018A
公开(公告)日：2000-02-15
申请号：US137914
申请日：1998-08-20
申请人： Christian E. Herdt , Daryl G. Dietrich , John R. Gill , Paul F. Ruths
发明人： Christian E. Herdt , Daryl G. Dietrich , John R. Gill , Paul F. Ruths
IPC分类号： G11C14/00 , G11C11/34
CPC分类号： G11C14/00
摘要： The invention relates to a non-volatile, static random access memory (nvSRAM) device that addresses the consequence of a manufacturing defect that occasionally occurs during mass production of the nvSRAM device and if not addressed, reduces the yield of the production process. The consequence of the defect is termed a store disturb because the execution of a store operation in a defective nvSRAM causes the bit of data retained in the SRAM portion and, in some cases, the nv portion of the nvSRAM to be instable or corrupted. The present invention provides an nvSRAM device in which the controller provides modified signals to the nvSRAM memory portion of the device that address the store disturb phenomena and, as a consequence, improve the yield of the manufacturing process.
摘要翻译：本发明涉及一种非易失性静态随机存取存储器（nvSRAM）装置，其解决了在大规模生产nvSRAM器件期间偶尔发生的制造缺陷的后果，如果没有被解决，则降低了生产过程的产量。缺陷的后果被称为存储器干扰，因为在缺陷nvSRAM中的存储操作的执行导致保留在SRAM部分中的数据位，并且在某些情况下，nvSRAM的nv部分不稳定或损坏。本发明提供了一种nvSRAM装置，其中控制器向装置的nvSRAM存储器部分提供修改的信号以解决商店干扰现象，并且因此提高制造过程的产量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式