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1. 发明授权

US08929151B2 Extended select gate lifetime 有权
标题翻译：扩展选择栅极寿命
公开(公告)号：US08929151B2
公开(公告)日：2015-01-06
申请号：US14313155
申请日：2014-06-24
申请人： Yogesh Wakchaure , Kiran Pangal , Xin Guo , Qingru Meng , Hanmant P Belgal
发明人： Yogesh Wakchaure , Kiran Pangal , Xin Guo , Qingru Meng , Hanmant P Belgal
IPC分类号： G11C16/16 , G11C16/10 , G11C16/26 , H01L27/115
CPC分类号： G11C16/14 , G11C16/0483 , G11C16/06 , G11C16/10 , G11C16/102 , G11C16/16 , G11C16/26 , G11C16/3418 , G11C16/3445 , G11C29/028 , H01L27/115
摘要： A flash memory device may include two or more flash memory cells organized as a NAND string in a block of flash memory cells, and flash cells, coupled to the NAND string at opposite ends, to function as select gates. The flash memory device may be capable of providing information related to a voltage threshold of the select gates to a flash controller, erasing the flash cells that function as select gates in response to a select gate erase command, and programming the flash cells that function as select gates in response to a select gate program command. A flash controller may be coupled to the flash memory device, and is capable of sending the select gate erase commend to the flash memory device if the information provided by the flash memory device indicates that the voltage threshold of at least one of the select gates is above a predetermined voltage level, and sending the select gate program command to the flash memory device if the information provided by the flash memory device indicates that the voltage threshold of at least one of the select gates is outside of a predetermined voltage range.
摘要翻译：闪存器件可以包括在快闪存储器单元块中被组织为NAND串的两个或更多个闪存单元，以及在相对端耦合到NAND串的闪存单元，用作选择门。闪速存储器件可以能够向闪存控制器提供与选通门的电压阈值相关的信息，擦除响应于选择栅极擦除命令而用作选择栅极的闪存单元，以及编程用作响应于选择门程序命令选择门。闪存控制器可以耦合到闪存设备，并且如果闪存设备提供的信息指示至少一个选择门的电压阈值是如果由闪速存储器件提供的信息指示至少一个选择门的电压阈值在预定电压范围之外，则将选择门程序命令发送到闪速存储器件。

2. 发明授权

US08792283B2 Extended select gate lifetime 有权
标题翻译：扩展选择栅极寿命
公开(公告)号：US08792283B2
公开(公告)日：2014-07-29
申请号：US13528966
申请日：2012-06-21
申请人： Yogesh B. Wakchaure , Kiran Pangal , Xin Guo , Qingru Meng , Hanmant Belgal
发明人： Yogesh B. Wakchaure , Kiran Pangal , Xin Guo , Qingru Meng , Hanmant Belgal
IPC分类号： G11C16/16 , G11C16/10 , G11C16/26 , H01L27/115
CPC分类号： G11C16/14 , G11C16/0483 , G11C16/06 , G11C16/10 , G11C16/102 , G11C16/16 , G11C16/26 , G11C16/3418 , G11C16/3445 , G11C29/028 , H01L27/115
摘要： A memory device may include two or more memory cells in an integrated circuit, at least one flash cell acting as a select gate coupled to the two or more memory cells, and an interface to accept a select gate erase command and a select gate program command during normal operation of the integrated circuit. The integrated circuit may be capable to perform operations to erase the at least one select gate in response to the select gate erase command, and program the at least one select gate in response to the select gate program command.
摘要翻译：存储器件可以包括集成电路中的两个或更多个存储器单元，用作耦合到两个或更多个存储器单元的选择栅极的至少一个闪存单元以及接受选择栅极擦除命令和选择栅极程序指令的接口在集成电路正常运行期间。集成电路可以执行响应于选择栅极擦除命令擦除至少一个选择栅极的操作，并且响应于选择栅极程序命令编程至少一个选择栅极。

3. 发明申请

US20140307507A1 EXTENDED SELECT GATE LIFETIME 有权
标题翻译：扩展选择门锁生命
公开(公告)号：US20140307507A1
公开(公告)日：2014-10-16
申请号：US14313155
申请日：2014-06-24
申请人： Yogesh Wakchaure , Kiran Pangal , Xin Guo , Qingru Meng , Hanmant P. Belgal
发明人： Yogesh Wakchaure , Kiran Pangal , Xin Guo , Qingru Meng , Hanmant P. Belgal
IPC分类号： G11C16/16
CPC分类号： G11C16/14 , G11C16/0483 , G11C16/06 , G11C16/10 , G11C16/102 , G11C16/16 , G11C16/26 , G11C16/3418 , G11C16/3445 , G11C29/028 , H01L27/115
摘要： A flash memory device may include two or more flash memory cells organized as a NAND string in a block of flash memory cells, and flash cells, coupled to the NAND string at opposite ends, to function as select gates. The flash memory device may be capable of providing information related to a voltage threshold of the select gates to a flash controller, erasing the flash cells that function as select gates in response to a select gate erase command, and programming the flash cells that function as select gates in response to a select gate program command. A flash controller may be coupled to the flash memory device, and is capable of sending the select gate erase commend to the flash memory device if the information provided by the flash memory device indicates that the voltage threshold of at least one of the select gates is above a predetermined voltage level, and sending the select gate program command to the flash memory device if the information provided by the flash memory device indicates that the voltage threshold of at least one of the select gates is outside of a predetermined voltage range.
摘要翻译：闪存器件可以包括在快闪存储器单元块中被组织为NAND串的两个或更多个闪存单元，以及在相对端耦合到NAND串的闪存单元，用作选择门。闪速存储器件可以能够向闪存控制器提供与选通门的电压阈值相关的信息，擦除响应于选择栅极擦除命令而用作选择栅极的闪存单元，以及编程用作响应于选择门程序命令选择门。闪存控制器可以耦合到闪存设备，并且如果闪存设备提供的信息指示至少一个选择门的电压阈值是如果由闪速存储器件提供的信息指示至少一个选择门的电压阈值在预定电压范围之外，则将选择门程序命令发送到闪速存储器件。

4. 发明申请

US20130343129A1 EXTENDED SELECT GATE LIFETIME 有权
标题翻译：扩展选择门锁生命
公开(公告)号：US20130343129A1
公开(公告)日：2013-12-26
申请号：US13528966
申请日：2012-06-21
申请人： Yogesh B. Wakchaure , Kiran Pangal , Xin Guo , Qingru Meng , Hanmant Belgal
发明人： Yogesh B. Wakchaure , Kiran Pangal , Xin Guo , Qingru Meng , Hanmant Belgal
IPC分类号： G11C16/16
CPC分类号： G11C16/14 , G11C16/0483 , G11C16/06 , G11C16/10 , G11C16/102 , G11C16/16 , G11C16/26 , G11C16/3418 , G11C16/3445 , G11C29/028 , H01L27/115
摘要： A memory device may include two or more memory cells in an integrated circuit, at least one flash cell acting as a select gate coupled to the two or more memory cells, and an interface to accept a select gate erase command and a select gate program command during normal operation of the integrated circuit. The integrated circuit may be capable to perform operations to erase the at least one select gate in response to the select gate erase command, and program the at least one select gate in response to the select gate program command.
摘要翻译：存储器件可以包括集成电路中的两个或更多个存储器单元，用作耦合到两个或更多个存储器单元的选择栅极的至少一个闪存单元以及接受选择栅极擦除命令和选择栅极程序指令的接口在集成电路正常运行期间。集成电路可以执行响应于选择栅极擦除命令擦除至少一个选择栅极的操作，并且响应于选择栅极程序命令编程至少一个选择栅极。

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