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    • 9. 发明授权
    • CMOS RF power amplifier with LDMOS bias circuit for large supply voltages
    • CMOS射频功率放大器,具有LDMOS偏置电路,适用于大电源电压
    • US08072270B2
    • 2011-12-06
    • US12430645
    • 2009-04-27
    • Ali AfsahiArya Reza BehzadVijay Ramachandra Reddy
    • Ali AfsahiArya Reza BehzadVijay Ramachandra Reddy
    • H03F3/04
    • H03F1/223H03F1/0261H03F1/52H03F3/195H03F3/24H03F2200/18
    • Bias circuitry that may be used within a communications or other device includes a first current mirror having first and second transistors with sources coupled to ground and operable to receive a reference current at a drain of first transistor. A second current mirror has first and second transistors with drains coupled to a battery voltage supply. A third current mirror has first and second transistors with drains coupled to sources of the first and second transistors of the second current mirror, respectively. A biasing transistor couples between the second transistor of the first current mirror and the first transistor of the third current mirror and operable to receive a tuning input voltage at its gate. A resistive element coupled between the second transistor of the third current mirror and ground produces a bias voltage produced at a connection of the resistive element and the second transistor of the third current mirror.
    • 可以在通信或其他设备中使用的偏置电路包括具有第一和第二晶体管的第一电流镜,其具有耦合到地的源和可操作以在第一晶体管的漏极处接收参考电流。 第二电流镜具有第一和第二晶体管,漏极耦合到电池电压源。 第三电流镜具有第一和第二晶体管,漏极分别耦合到第二电流镜的第一和第二晶体管的源极。 偏置晶体管耦合在第一电流镜的第二晶体管和第三电流镜的第一晶体管之间,并且可操作以在其栅极处接收调谐输入电压。 耦合在第三电流镜的第二晶体管和地之间的电阻元件产生在电阻元件和第三电流镜的第二晶体管的连接处产生的偏置电压。