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1. 发明授权

US08981484B2 Ballast resistor for super-high-voltage devices 有权
标题翻译：用于超高压设备的镇流电阻
公开(公告)号：US08981484B2
公开(公告)日：2015-03-17
申请号：US13467666
申请日：2012-05-09
申请人： Sehat Sutardja , Ravishanker Krishnamoorthy , Siew Yong Chui
发明人： Sehat Sutardja , Ravishanker Krishnamoorthy , Siew Yong Chui
IPC分类号： H01L23/62 , H01L29/78 , H01L29/66 , H01L29/08
CPC分类号： H01L27/0266 , H01L27/0288 , H01L29/0847 , H01L29/0878 , H01L29/66659 , H01L29/66681 , H01L29/7817 , H01L29/7835 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit (IC) including a well region of the IC having a first doping level and a plurality of semiconductor regions implanted in the well region. Each of the plurality of semiconductor regions has a second doping level. The second doping level is greater than the first doping level. A plurality of polysilicon regions are arranged on the plurality of semiconductor regions. The polysilicon regions are respectively connected to the semiconductor regions. The plurality of semiconductor regions is a drain of a metal-oxide semiconductor field-effect transistor (MOSFET).
摘要翻译：一种集成电路（IC），包括具有第一掺杂级的IC的阱区和植入阱区的多个半导体区。多个半导体区域中的每一个具有第二掺杂水平。第二掺杂水平大于第一掺杂水平。多个多晶硅区域布置在多个半导体区域上。多晶硅区域分别连接到半导体区域。多个半导体区域是金属氧化物半导体场效应晶体管（MOSFET）的漏极。

2. 发明授权

US08791664B2 Systems and methods for adaptive torque adjustment and motor control 有权
标题翻译：用于自适应扭矩调节和电机控制的系统和方法
公开(公告)号：US08791664B2
公开(公告)日：2014-07-29
申请号：US13010928
申请日：2011-01-21
申请人： Ravishanker Krishnamoorthy , Edy Susanto , Cheng Yong Teoh , Foo Leng Leong
发明人： Ravishanker Krishnamoorthy , Edy Susanto , Cheng Yong Teoh , Foo Leng Leong
IPC分类号： H02P27/00
CPC分类号： H02P6/08 , H02P6/06 , H02P6/15 , H02P6/28
摘要： A system includes a target speed module and a pulse-width modulation (PWM) control module. The target speed module is configured to provide a first waveform based on a first speed setting for a motor. A start of a first cycle of the first waveform corresponds to at least one of a first current or a first voltage. The PWM control module is configured to shift a phase of the first waveform by a torque angle adjustment value to generate a second waveform. A start of a first cycle of the second waveform corresponds to at least one of a second voltage or a second current. The second voltage is greater than the first voltage, and the second current is greater than the first current. The PWM control module is configured to control the motor based on the second waveform.
摘要翻译：系统包括目标速度模块和脉冲宽度调制（PWM）控制模块。目标速度模块被配置为基于用于电动机的第一速度设置来提供第一波形。第一波形的第一周期的开始对应于第一电流或第一电压中的至少一个。 PWM控制模块被配置为将第一波形的相位移位一个转矩角度调整值以产生第二波形。第二波形的第一周期的开始对应于第二电压或第二电流中的至少一个。第二电压大于第一电压，第二电流大于第一电流。 PWM控制模块被配置为基于第二波形来控制电动机。

3. 发明授权

US08472233B1 Circuits and methods for multiple programmable memory using one-time programmable memory 有权
标题翻译：使用一次性可编程存储器的多个可编程存储器的电路和方法
公开(公告)号：US08472233B1
公开(公告)日：2013-06-25
申请号：US13461624
申请日：2012-05-01
申请人： Ravishanker Krishnamoorthy , Foo Leng Leong
发明人： Ravishanker Krishnamoorthy , Foo Leng Leong
IPC分类号： G11C17/00
CPC分类号： G11C17/18
摘要： Circuits and methods for utilizing multiple programmable memory using one-time programmable (OTP) memory in a device controller. The device controller generally includes a plurality of OTP memories, each capable of being programmed once and only once; a state machine configured to enable writing updated parameter information to an available OTP memory and to provide a control signal indicating a next OTP memory to which next received data are to be written, and read logic coupled to the plurality of OTP memories, the read logic configured to read an output from a most recently programmed OTP memory. The method generally includes receiving updated parameter information to be stored in the memory, programming one of a plurality of one-time programmable (OTP) memories with the updated parameter information, indicating an availability of a next OTP memory, and reading an output from a most recently programmed OTP memory.
摘要翻译：在设备控制器中使用一次性可编程（OTP）存储器来利用多个可编程存储器的电路和方法。设备控制器通常包括多个OTP存储器，每个OTP存储器能够被编程一次且仅一次; 状态机，被配置为使得能够向可用的OTP存储器写入更新的参数信息，并且提供指示下一个接收数据要被写入的下一个OTP存储器的控制信号，以及耦合到所述多个OTP存储器的读逻辑，所述读逻辑配置为读取最近编程的OTP存储器的输出。该方法通常包括接收要存储在存储器中的更新的参数信息，用更新的参数信息编程多个一次可编程（OTP）存储器中的一个，指示下一个OTP存储器的可用性，以及从最近编程的OTP内存。

4. 发明申请

US20130043726A1 METHOD AND APPARATUS FOR TRIAC APPLICATIONS 有权
标题翻译： TRIAC应用的方法和装置
公开(公告)号：US20130043726A1
公开(公告)日：2013-02-21
申请号：US13557765
申请日：2012-07-25
申请人： Ravishanker KRISHNAMOORTHY , Siew Yong Chui , Jun Li
发明人： Ravishanker KRISHNAMOORTHY , Siew Yong Chui , Jun Li
IPC分类号： H02J3/00
CPC分类号： H05B33/0845 , H05B37/0272 , H05B39/08 , H05B41/392 , Y10T307/406
摘要： Aspects of the disclosure provide a circuit. The circuit includes a control circuit and a return path circuit. The control circuit is configured to operate in response to a first conduction angle of a dimmer coupled to the circuit. The first conduction angle is adjusted to control an output power to a first device. The dimmer has a second conduction angle that is independent of the control of the output power to the first device. The return path circuit is configured to provide a return path to enable providing power to a second device in response to the second conduction angle.
摘要翻译：本公开的方面提供电路。电路包括控制电路和返回路径电路。控制电路被配置为响应于耦合到电路的调光器的第一导通角而工作。调整第一导通角以控制第一装置的输出功率。调光器具有与控制第一器件的输出功率无关的第二导通角。返回路径电路被配置为提供返回路径以使得能够响应于第二导通角度向第二设备提供电力。

5. 发明申请

US20120326234A1 BALLAST RESISTOR FOR SUPER-HIGH-VOLTAGE DEVICES 有权
标题翻译：用于超高压装置的压阻电阻器
公开(公告)号：US20120326234A1
公开(公告)日：2012-12-27
申请号：US13467666
申请日：2012-05-09
申请人： Sehat Sutardja , Ravishanker Krishnamoorthy , Siew Yong Chui
发明人： Sehat Sutardja , Ravishanker Krishnamoorthy , Siew Yong Chui
IPC分类号： H01L27/06 , H01L21/02
CPC分类号： H01L27/0266 , H01L27/0288 , H01L29/0847 , H01L29/0878 , H01L29/66659 , H01L29/66681 , H01L29/7817 , H01L29/7835 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit (IC) including a well region of the IC having a first doping level and a plurality of semiconductor regions implanted in the well region. Each of the plurality of semiconductor regions has a second doping level. The second doping level is greater than the first doping level. A plurality of polysilicon regions are arranged on the plurality of semiconductor regions. The polysilicon regions are respectively connected to the semiconductor regions. The plurality of semiconductor regions is a drain of a metal-oxide semiconductor field-effect transistor (MOSFET).
摘要翻译：一种集成电路（IC），包括具有第一掺杂级的IC的阱区和植入阱区的多个半导体区。多个半导体区域中的每一个具有第二掺杂水平。第二掺杂水平大于第一掺杂水平。多个多晶硅区域布置在多个半导体区域上。多晶硅区域分别连接到半导体区域。多个半导体区域是金属氧化物半导体场效应晶体管（MOSFET）的漏极。

6. 发明授权

US08164285B2 External disturbance detection system and method for two-phase motor control systems 有权
公开(公告)号：US08164285B2
公开(公告)日：2012-04-24
申请号：US12480259
申请日：2009-06-08
申请人： Foo Leng Leong , Edy Susanto , Ravishanker Krishnamoorthy
发明人： Foo Leng Leong , Edy Susanto , Ravishanker Krishnamoorthy
IPC分类号： H02P6/00
CPC分类号： H02P6/06
摘要： A system includes a power control module, a period determination module, and a control module. The power control module controls current through stator coils of a motor to rotate a rotor. The period determination module determines a first length of time between a first set of induced stator coil voltages and determines a second length of time between a second set of induced stator coil voltages. The control module determines whether an external disturbance disturbs rotation of the rotor based on a difference between the first and second lengths of time.

7. 发明授权

US08901648B2 MOS device with low on-resistance 有权
标题翻译：具有低导通电阻的MOS器件
公开(公告)号：US08901648B2
公开(公告)日：2014-12-02
申请号：US12337059
申请日：2008-12-17
申请人： Sehat Sutardja , Ravishanker Krishnamoorthy
发明人： Sehat Sutardja , Ravishanker Krishnamoorthy
IPC分类号： H01L29/78 , H01L29/423 , H01L29/06 , H01L29/417
CPC分类号： H01L29/78 , H01L29/0692 , H01L29/0696 , H01L29/41725 , H01L29/4238 , H01L29/7816
摘要： Some of the embodiments of the present disclosure provide a metal oxide semiconductor (MOS) device comprising a drain region, a gate region surrounding the drain region and formed in a loop around the drain region, a plurality of source regions arranged around the gate region, wherein each source region is situated across from a corresponding side of the drain region, and a plurality of bulk regions arranged around the gate region, wherein one or more of the plurality of source regions separate one or more of the plurality of bulk regions from the gate region. Other embodiments are also described and claimed.
摘要翻译：本公开的一些实施例提供一种金属氧化物半导体（MOS）器件，其包括漏极区域，围绕漏极区域并围绕漏极区域形成的环路的栅极区域，围绕栅极区域布置的多个源极区域，其中每个源极区域位于所述漏极区域的对应侧两侧，以及围绕所述栅极区域布置的多个主体区域，其中所述多个源极区域中的一个或多个将所述多个体区域中的一个或多个与所述多个区域门区域。还描述和要求保护其他实施例。

8. 发明授权

US08853985B2 Back-EMF detection for motor control 有权
标题翻译：用于电机控制的反电动势检测
公开(公告)号：US08853985B2
公开(公告)日：2014-10-07
申请号：US13223705
申请日：2011-09-01
申请人： Ravishanker Krishnamoorthy , Foo Leng Leong , Edy Susanto
发明人： Ravishanker Krishnamoorthy , Foo Leng Leong , Edy Susanto
IPC分类号： H02P1/00 , H02P6/18
CPC分类号： H02P6/182 , H02P6/187
摘要： Systems, methods, and other embodiments associated with back-EMF detection for motor control are described. In an embodiment, an apparatus includes a drive circuit configured to apply excitation signals to respective inputs of a motor, a signal inhibit circuit configured to convey a signal to inhibit application of the excitation signals during an interval, and a measuring circuit configured to measure a back-electromotive force (EMF) signal crossing a reference signal during the interval.
摘要翻译：描述了与用于电动机控制的反电动势检测相关联的系统，方法和其它实施例。在一个实施例中，一种装置包括：驱动电路，被配置为将激励信号施加到电动机的相应输入;信号禁止电路，被配置为传送信号以阻止在间隔期间施加激励信号;以及测量电路，反电动势（EMF）信号在间隔期间与参考信号交叉。

9. 发明授权

US08742735B2 High-voltage startup circuit 有权
标题翻译：高压启动电路
公开(公告)号：US08742735B2
公开(公告)日：2014-06-03
申请号：US13449407
申请日：2012-04-18
申请人： Ravishanker Krishnamoorthy , Radu Pitigoi-Aron , Siew Yong Chui
发明人： Ravishanker Krishnamoorthy , Radu Pitigoi-Aron , Siew Yong Chui
IPC分类号： G05F1/10
CPC分类号： H02M7/217 , H02M2001/0006
摘要： A system including a power transistor configured to receive an alternating current (AC) line voltage and a control circuit. During a rising portion of a half cycle of the AC line voltage, the control circuit is configured to turn on the power transistor when the AC line voltage reaches a first value and turn off the power transistor when the AC line voltage reaches a second value. The second value is greater than the first value. During a falling portion of the half cycle, the control circuit is configured to turn on the power transistor when the AC line voltage reaches the second value and turn off the power transistor when the AC line voltage reaches the first value.
摘要翻译：一种包括被配置为接收交流（AC）线路电压的功率晶体管和控制电路的系统。在AC线电压的半周期的上升部分期间，控制电路被配置为当AC线电压达到第一值时接通功率晶体管，并且当AC线电压达到第二值时关闭功率晶体管。第二个值大于第一个值。在半周期的下降部分期间，控制电路被配置为当AC线电压达到第二值时接通功率晶体管，并且当AC线电压达到第一值时关闭功率晶体管。

10. 发明授权

US08374004B2 Isolated AC-DC converter with master controller on secondary side and slave controller on primary side 有权
标题翻译：隔离式AC-DC转换器，主控制器在次级侧，从控制器在初级侧
公开(公告)号：US08374004B2
公开(公告)日：2013-02-12
申请号：US12814957
申请日：2010-06-14
申请人： Sehat Sutardja , Ravishanker Krishnamoorthy , Wanfeng Zhang
发明人： Sehat Sutardja , Ravishanker Krishnamoorthy , Wanfeng Zhang
IPC分类号： H02M3/335
CPC分类号： H02M3/335 , H02M3/33538
摘要： An isolated alternating current (AC)-direct current (DC) converter is disclosed. The isolated AC-DC converter comprises a slave control circuit including a slave driver module configured to receive a command and to control coupling of the slave control circuit to a primary-side inductor of a transformer based on the command, a master control circuit coupled to a secondary-side inductor of the transformer, the master control circuit including a master control module configured to sense a feedback voltage across a load and to generate the command based on the feedback voltage and a reference voltage, and a coupler configured to communicate the command from the master control module to the slave driver module and to provide isolation between the master control module and the slave driver module.
摘要翻译：公开了一种隔离交流（AC） - 直流（DC）转换器。隔离式AC-DC转换器包括从控制电路，其包括被配置为接收命令的从驱动器模块，并且基于该命令控制从控制电路与变压器的初级侧电感器的耦合，主控制电路耦合到所述变压器的次级侧电感器，所述主控制电路包括主控制模块，所述主控制模块被配置为感测跨过负载的反馈电压并且基于所述反馈电压和参考电压产生所述指令;以及耦合器，被配置为将所述指令从主控模块到从属驱动模块，并提供主控模块和从驱动模块之间的隔离。

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