专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080067338A1 CHARGED PARTICLE BEAM LITHOGRAPHY SYSTEM AND METHOD FOR EVALUATING THE SAME 有权
标题翻译：充电粒子束光刻系统及其评估方法
公开(公告)号：US20080067338A1
公开(公告)日：2008-03-20
申请号：US11855613
申请日：2007-09-14
申请人： Rieko Nishimura , Shuichi Tamamushi
发明人： Rieko Nishimura , Shuichi Tamamushi
IPC分类号： G21K1/08 , G21K5/10
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/302 , H01J37/304 , H01J2237/3045 , H01J2237/30472
摘要： In the charged particle beam lithography system, a pattern area to be drawn is divided into a plurality of frames, a main deflection positions a charged particle beam to a subfield within the frame, and an auxiliary deflection draws a pattern in units of the subfield. The charged particle beam lithography system includes a beam optical system including a deflector deflecting the beam, a driver driving the deflector, and a deflection control, portion controlling the driver according to drawing data indicating a pattern to be drawn. The deflection control portion controls the driver according to a settling time that is determined so that an offset of an irradiation position of the charged particle beam has a certain value irrespective of any changes in deflection amount of the auxiliary deflection in the subfield.
摘要翻译：在带电粒子束光刻系统中，要绘制的图案区域被分成多个框架，主偏转将带电粒子束定位在框架内的子场，辅助偏转以子场为单位绘制图案。带电粒子束光刻系统包括光束光学系统，其包括偏转光束的偏转器，驱动偏转器的驱动器和偏转控制部分，根据指示要绘制的图案的图形数据控制驱动器。偏转控制部分根据确定为使得带电粒子束的照射位置的偏移具有一定值而不考虑子场中的辅助偏转的偏转量的变化的稳定时间来控制驾驶员。

2. 发明授权

US08748064B2 Charged particle beam drawing method and charged particle beam drawing apparatus 有权
标题翻译：带电粒子束拉拔法和带电粒子束拉制装置
公开(公告)号：US08748064B2
公开(公告)日：2014-06-10
申请号：US13606888
申请日：2012-09-07
申请人： Rieko Nishimura , Satoshi Nakahashi
发明人： Rieko Nishimura , Satoshi Nakahashi
IPC分类号： G03F1/44 , G03F7/20
CPC分类号： G03F1/44 , B82Y10/00 , B82Y40/00 , G03F7/2063 , H01J37/3026 , H01J37/3174 , Y10S430/143
摘要： A charged particle beam drawing method according to an embodiment is a method including forming a first measurement pattern in a first measurement pattern area; in succession with processing of forming the first measurement pattern, forming a second measurement pattern in a second measurement pattern area located farthest from the first measurement pattern area in the same column as the first measurement pattern area; and in moving a charged particle beam from the second measurement pattern area to a third measurement pattern area located adjacent to the first measurement pattern area in the same column as the first and second measurement patterns to form a third measurement pattern, moving the charged particle beam to the third measurement pattern area while taking tiny shots approximately equivalent to a data resolution at the adjacent measurement pattern areas to be drawn in the same column one after another from the second measurement pattern.
摘要翻译：根据实施例的带电粒子束描绘方法是包括在第一测量图案区域中形成第一测量图案的方法; 连续地形成第一测量图案的处理，在与第一测量图案区域相同的列中距离第一测量图案区域最远的第二测量图案区域中形成第二测量图案; 并且将带电粒子束从第二测量图案区域移动到与第一和第二测量图案在同一列中与第一测量图案区域相邻的第三测量图案区域，以形成第三测量图案，移动带电粒子束到第三测量图案区域，同时从第二测量图案一个接一个地在相邻的列中绘制大致相当于相邻测量图案区域的数据分辨率的微小照片。

3. 发明授权

US07893411B2 Charged-particle beam writing apparatus and charged-particle beam writing method 有权
标题翻译：带电粒子束写入装置和带电粒子束写入方法
公开(公告)号：US07893411B2
公开(公告)日：2011-02-22
申请号：US12239116
申请日：2008-09-26
申请人： Rieko Nishimura , Kiyoshi Hattori
发明人： Rieko Nishimura , Kiyoshi Hattori
IPC分类号： H01J37/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/045 , H01J37/1474 , H01J37/302 , H01J2237/0432 , H01J2237/1504 , H01J2237/30488
摘要： A timing control circuit controls the timing for applying a voltage to a sub deflector when changing a position to be irradiated with the charged-particle beam. A control computer compares a target line width and a line width of a pattern written with the timing for applying voltage to the sub deflector changed, and determines appropriate timing for applying voltage to the sub deflector from a timing range corresponding to a predetermined allowable range of the difference between the target line width and the line width of the written pattern. The control computer then controls the timing control circuit based on the determined timing.
摘要翻译：定时控制电路在改变要被带电粒子束照射的位置时控制向副偏转器施加电压的定时。控制计算机将目标线宽度和写入用于向副偏转器施加电压的定时的图案的线宽进行比较，并且从对应于预定允许范围的定时范围确定适合于向副偏转器施加电压的定时目标线宽与写入图案的线宽之间的差异。然后，控制计算机基于确定的定时来控制定时控制电路。

4. 发明申请

US20090242807A1 CORRECTING SUBSTRATE FOR CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS 有权
标题翻译：修正粒子束光刻机的校正基板
公开(公告)号：US20090242807A1
公开(公告)日：2009-10-01
申请号：US12408212
申请日：2009-03-20
申请人： Kaoru TSURUTA , Takashi KAMIKUBO , Rieko NISHIMURA , Shusuke YOSHITAKE , Shuichi TAMAMUSHI
发明人： Kaoru TSURUTA , Takashi KAMIKUBO , Rieko NISHIMURA , Shusuke YOSHITAKE , Shuichi TAMAMUSHI
IPC分类号： A61N5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/30444
摘要： A correcting substrate for a charged particle beam lithography apparatus includes a substrate body using a low thermal expansion material having a thermal expansion lower than that of a silicon oxide (SiO2) material; a first conductive film arranged above the substrate; and a second conductive film selectively arranged on the first conductive film and having a reflectance higher than the first conductive film, wherein the low thermal expansion material is exposed on a rear surface of the correcting substrate.
摘要翻译：用于带电粒子束光刻设备的校正衬底包括使用热膨胀低于氧化硅（SiO 2）材料的热膨胀材料的低热膨胀材料的衬底体; 布置在所述基板上方的第一导电膜; 以及选择性地布置在所述第一导电膜上并具有高于所述第一导电膜的反射率的第二导电膜，其中所述低热膨胀材料暴露在所述校正衬底的后表面上。

5. 发明申请

US20070243487A1 FORMING METHOD OF RESIST PATTERN AND WRITING METHOD OF CHARGED PARTICLE BEAM 审中-公开
标题翻译：电荷型粒子的形成方法和填充粒子束的写入方法
公开(公告)号：US20070243487A1
公开(公告)日：2007-10-18
申请号：US11734587
申请日：2007-04-12
申请人： Hirohito Anze , Takehiko Katsumata , Shuichi Tamamushi , Takashi Kamikubo , Rieko Nishimura , Makoto Hiramoto , Tomoo Motosugi , Takayuki Ohnishi
发明人： Hirohito Anze , Takehiko Katsumata , Shuichi Tamamushi , Takashi Kamikubo , Rieko Nishimura , Makoto Hiramoto , Tomoo Motosugi , Takayuki Ohnishi
IPC分类号： G03C1/00
CPC分类号： G03F1/78
摘要： The present invention realized the excellent dimensional accuracy of resist patterns by using a chemical amplification type resist whose effective acid diffusion length is shorten without decreasing throughput of a charged particle beam writing system.The resist pattern forming method of the present invention features that the amount of the acid diffusion inhibitor in a chemical amplification type resist in order to shorten the effective acid diffusion length increases and the current density of a charged particle exposure in order to prevent the throughput drop of the writing system increases.The present invention provides a resist pattern forming method comprising a process of coating a chemical amplification type resist on the surface of a processing substrate, a process of exposing patterns by using charged particle beams on the surface of the said substrate, a process of post exposure baking the chemical amplification type resist after the exposure, and a process of developing the said chemical amplification type resist.The said method features that the amount of an acid diffusion inhibitor in the said resist increases and the current density of the charged particle exposure also increases.
摘要翻译：本发明通过使用有效的酸扩散长度缩短而不降低带电粒子束写入系统的通过量的化学放大型抗蚀剂来实现抗蚀剂图案的优异的尺寸精度。本发明的抗蚀剂图案形成方法的特征在于为了缩短有效酸扩散长度，化学放大型抗蚀剂中的酸扩散抑制剂的量增加，并且带电粒子暴露的电流密度为了防止生产量下降的写作系统增加。本发明提供一种抗蚀剂图案形成方法，其包括在处理基板的表面上涂布化学放大型抗蚀剂的方法，通过在所述基板的表面上使用带电粒子束来曝光图案的处理，后曝光在曝光后烘烤化学放大型抗蚀剂，以及显影所述化学放大型抗蚀剂的工艺。所述方法的特征在于所述抗蚀剂中的酸扩散抑制剂的量增加，并且带电粒子暴露的电流密度也增加。

6. 发明授权

US08183544B2 Correcting substrate for charged particle beam lithography apparatus 有权
标题翻译：用于带电粒子束光刻设备的校正基板
公开(公告)号：US08183544B2
公开(公告)日：2012-05-22
申请号：US12408212
申请日：2009-03-20
申请人： Kaoru Tsuruta , Takashi Kamikubo , Rieko Nishimura , Shusuke Yoshitake , Shuichi Tamamushi
发明人： Kaoru Tsuruta , Takashi Kamikubo , Rieko Nishimura , Shusuke Yoshitake , Shuichi Tamamushi
IPC分类号： A61N5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/30444
摘要： A correcting substrate for a charged particle beam lithography apparatus includes a substrate body using a low thermal expansion material having a thermal expansion lower than that of a silicon oxide (SiO2) material; a first conductive film arranged above the substrate; and a second conductive film selectively arranged on the first conductive film and having a reflectance higher than the first conductive film, wherein the low thermal expansion material is exposed on a rear surface of the correcting substrate.
摘要翻译：用于带电粒子束光刻设备的校正衬底包括使用热膨胀低于氧化硅（SiO 2）材料的热膨胀材料的低热膨胀材料的衬底体; 布置在所述基板上方的第一导电膜; 以及选择性地布置在所述第一导电膜上并具有高于所述第一导电膜的反射率的第二导电膜，其中所述低热膨胀材料暴露在所述校正衬底的后表面上。

7. 发明申请

US20100288939A1 METHOD OF DETERMINING MAIN DEFLECTION SETTLING TIME FOR CHARGED PARTICLE BEAM WRITING, METHOD OF WRITING WITH CHARGED PARTICLE BEAM, AND APPARATUS FOR WRITING WITH CHARGED PARTICLE BEAM 有权
标题翻译：确定用于充电颗粒光束的主要偏移时间的方法，带有充电颗粒光束的方法，以及用充电颗粒束编写的装置
公开(公告)号：US20100288939A1
公开(公告)日：2010-11-18
申请号：US12771108
申请日：2010-04-30
申请人： Rieko NISHIMURA
发明人： Rieko NISHIMURA
IPC分类号： H01J37/304 , H01J37/244 , H01J37/147
CPC分类号： H01J37/3045 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/3045
摘要： An electron beam is moved a long distance along a straight line from a sub-deflection region 101a to a diagonally opposite sub-deflection region 123w by main deflection of the beam, and a pattern P is written in the sub-deflection region 123w. The former writing step is repeated a plurality of times each with a different main deflection settling time, thereby writing a plurality of patterns P. The amount of displacement of each pattern P from its designed position is then measured. Further, the latter writing step is also repeated a plurality of times each with a different main deflection settling time, thereby writing another plurality of patterns P. The amount of displacement of each pattern P from its designed position is then measured.
摘要翻译：电子束通过光束的主偏转沿着直线从副偏转区域101a移动到对角线相对的副偏转区域123w，并且将图案P写入副偏转区域123w。前一个写入步骤重复多次，每次具有不同的主要偏转建立时间，从而写入多个图案P.然后测量每个图案P从其设计位置的位移量。此外，后一个写入步骤也重复多次，每次具有不同的主偏转建立时间，从而再写出多个图案P.然后测量每个图案P从其设计位置的位移量。

8. 发明授权

US07834333B2 Charged particle beam lithography system and method for evaluating the same 有权
标题翻译：带电粒子束光刻系统及其评估方法
公开(公告)号：US07834333B2
公开(公告)日：2010-11-16
申请号：US11855613
申请日：2007-09-14
申请人： Rieko Nishimura , Shuichi Tamamushi
发明人： Rieko Nishimura , Shuichi Tamamushi
IPC分类号： G21K5/02
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/302 , H01J37/304 , H01J2237/3045 , H01J2237/30472
摘要： In the charged particle beam lithography system, a pattern area to be drawn is divided into a plurality of frames, a main deflection positions a charged particle beam to a subfield within the frame, and an auxiliary deflection draws a pattern in units of the subfield. The charged particle beam lithography system includes a beam optical system including a deflector deflecting the beam, a driver driving the deflector, and a deflection control portion controlling the driver according to drawing data indicating a pattern to be drawn. The deflection control portion controls the driver according to a settling time that is determined so that an offset of an irradiation position of the charged particle beam has a certain value irrespective of any changes in deflection amount of the auxiliary deflection in the subfield.
摘要翻译：在带电粒子束光刻系统中，要绘制的图案区域被分成多个框架，主偏转将带电粒子束定位在框架内的子场，辅助偏转以子场为单位绘制图案。带电粒子束光刻系统包括光束光学系统，其包括偏转光束的偏转器，驱动偏转器的驱动器以及根据指示要绘制的图案的图形数据来控制驱动器的偏转控制部分。偏转控制部分根据确定为使得带电粒子束的照射位置的偏移具有一定值而不考虑子场中的辅助偏转的偏转量的变化的稳定时间来控制驾驶员。

9. 发明授权

US07705322B2 Charged-particle beam writing method 有权
标题翻译：带电粒子束写入方法
公开(公告)号：US07705322B2
公开(公告)日：2010-04-27
申请号：US12170874
申请日：2008-07-10
申请人： Rieko Nishimura , Takashi Kamikubo
发明人： Rieko Nishimura , Takashi Kamikubo
IPC分类号： H01J37/302
CPC分类号： H01J37/3045 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/2817 , H01J2237/30455 , H01J2237/30461 , H01J2237/30483
摘要： The present invention provides an electron beam writing method capable of suppressing a variation in position to be irradiated with an electron beam due to its drift and writing a predetermined pattern.A positional displacement amount near the center of each main deflection area of the charged-particle beam is determined. Correction values are determined from a plurality of the positional displacement amounts. A position irradiated with the charged-particle beam is corrected from the correction values. The neighborhood of the center of the main deflection area can be a sub deflection area including the center of the main deflection area. In this case, the positional displacement amount can be one for one arbitrary point in the sub deflection area. Alternatively, the positional displacement amount can also be the average of positional displacement amounts at a plurality of arbitrary points in the sub deflection area.
摘要翻译：本发明提供一种电子束写入方法，其能够抑制由于其漂移并写入预定图案而被电子束照射的位置的变化。确定带电粒子束的每个主偏转区域的中心附近的位置偏移量。从多个位置偏移量确定校正值。从校正值校正用带电粒子束照射的位置。主偏转区域的中心附近可以是包括主偏转区域的中心的副偏转区域。在这种情况下，位移位移量可以是副偏转区域中的一个任意点的位移量。或者，位置偏移量也可以是副偏转区域中的多个任意点处的位置偏移量的平均值。

10. 发明授权

US07679068B2 Method of calculating deflection aberration correcting voltage and charged particle beam writing method 有权
标题翻译：计算偏转像差校正电压和带电粒子束写入方法
公开(公告)号：US07679068B2
公开(公告)日：2010-03-16
申请号：US11617165
申请日：2006-12-28
申请人： Takashi Kamikubo , Shuichi Tamamushi , Hitoshi Sunaoshi , Kenji Ohtoshi , Rieko Nishimura
发明人： Takashi Kamikubo , Shuichi Tamamushi , Hitoshi Sunaoshi , Kenji Ohtoshi , Rieko Nishimura
IPC分类号： G21K5/10 , G01D5/00
CPC分类号： G01K1/08 , B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J37/3174 , H01J2237/31776
摘要： A method of obtaining a deflection aberration correcting voltage. The method includes writing predetermined patterns at a plurality of focus height positions such that a dose is used as a variable. Dimensional variations of width sizes of the predetermined patterns written at the plurality of focus height positions such that the dose is used as the variable are measured. Further, effective resolutions of the written predetermined patterns are calculated by using the dimensional variations. The method further includes, on the basis of a focus height position at which a minimum effective resolution of the predetermined patterns is obtained, calculating a correcting voltage to correct deflection aberration and outputting the correcting voltage. The correcting voltage is used when a charged particle beam is deflected.
摘要翻译：一种获得偏转像差校正电压的方法。该方法包括在多个焦点高度位置处写入预定图案，使得剂量被用作变量。测量在多个焦点高度位置处写入的预定图案的宽度尺寸的尺寸变化，使得剂量用作变量。此外，通过使用尺寸变化来计算书写的预定图案的有效分辨率。该方法还包括：基于获得预定图案的最小有效分辨率的焦点高度位置，计算校正电压以校正偏转像差并输出校正电压。当带电粒子束偏转时使用校正电压。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式