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1. 发明授权

US07128986B2 Nanoclustered magnetic materials for high moment write pole applications 有权
标题翻译：用于高磁矩写磁极应用的纳米磁性材料
公开(公告)号：US07128986B2
公开(公告)日：2006-10-31
申请号：US10686841
申请日：2003-10-16
申请人： Robert W. Lamberton , Declan Macken , Paul M. Dodd , William J. O'Kane
发明人： Robert W. Lamberton , Declan Macken , Paul M. Dodd , William J. O'Kane
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , G11B5/1274 , G11B5/1278 , G11B5/133 , G11B5/187 , G11B5/313 , G11B5/74 , G11B2005/0029 , H01F10/007 , Y10T428/115 , Y10T428/1171 , Y10T428/256 , Y10T428/32
摘要： The present invention includes magnetic write elements with portions formed a nanophase high magnetic moment material to enable further increases in areal density in magnetic recording. The nanophase deposited high magnetic moment material comprises coated nanoclusters and nanolaminated cluster films that are deposited to form nanophase high magnetic moment material portions of a write pole and SUL layer in perpendicular recording media. The nanophase write poles exhibit high magnetic moments and are generally compatible with conventional writer head fabrication techniques.
摘要翻译：本发明包括具有形成纳米相高磁矩材料的部分的磁写入元件，以使磁记录中的面密度进一步增加。纳米相沉积的高磁矩材料包括沉积以在垂直记录介质中形成写极和SUL层的纳米相高磁矩材料部分的包覆的纳米团簇和纳米聚酰胺簇膜。纳米相位写磁极表现出高的磁矩，并且通常与传统的写入头制造技术兼容。

2. 发明授权

US07027270B2 Spin valve sensor for high areal density applications 失效
公开(公告)号：US07027270B2
公开(公告)日：2006-04-11
申请号：US10208509
申请日：2002-07-30
申请人： Dimitar V. Dimitrov , Insik Jin , Declan Macken , Robert W. Lamberton , Xuefei Tang , Johannes van Ek , Thomas R. Boonstra
发明人： Dimitar V. Dimitrov , Insik Jin , Declan Macken , Robert W. Lamberton , Xuefei Tang , Johannes van Ek , Thomas R. Boonstra
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/3903 , G11B2005/3996
摘要： The magnetoresistive sensor has a bottom shield, a nonmagnetic metallic pedestal, a bottom reader gap, a biasing element, a magnetoresistive stack, current leads, a top reader gap, and a top shield. The nonmagnetic metallic pedestal is positioned on a portion of the bottom shield and the nonmagnetic metallic pedestal has a width less than the width of the bottom shield. The bottom reader gap is positioned on the nonmagnetic metallic pedestal and on the bottom shield such that a portion of the bottom reader gap over the nonmagnetic metallic pedestal is raised relative to portions of the bottom reader gap not over the nonmagnetic metallic pedestal.

3. 发明授权

US06700752B2 Non-magnetic metallic layer in a reader gap of a disc drive 有权
标题翻译：在磁盘驱动器的读取器间隙中的非磁性金属层
公开(公告)号：US06700752B2
公开(公告)日：2004-03-02
申请号：US10107990
申请日：2002-03-27
申请人： Dimitar Dimitrov , Michael C. Kautzky , Sunita B. Gangopadhyay , Jumna P. Ramdular , Sisavath M. Bounnakhom , I-Fei Tsu , Robert W. Lamberton
发明人： Dimitar Dimitrov , Michael C. Kautzky , Sunita B. Gangopadhyay , Jumna P. Ramdular , Sisavath M. Bounnakhom , I-Fei Tsu , Robert W. Lamberton
IPC分类号： G11B533
CPC分类号： G11B5/3133 , G11B5/3103 , G11B5/3903 , G11B5/3967 , G11B5/40
摘要： A read/write head with a bottom shield on a slider substrate and a shared shield spaced apart from the bottom shield. A write head is deposited on the shared shield. A read sensor is spaced apart by reader magnetic gaps from the bottom shield and the shared shield. Electrically insulating layers in the reader magnetic gaps form a thermal resistance between the read sensor and the shields. A thermally conducting nonmagnetic layer in a reader magnetic gap reduces the thermal resistance without a corresponding reduction in the reader magnetic gaps.
摘要翻译：一个读/写头，带有一个底部屏蔽在滑块基板上，一个共享屏蔽与底部屏蔽隔开。写头放在共享屏蔽上。读取传感器通过读取器与底部屏蔽和共享屏蔽的磁隙间隔开。读取器磁隙中的电绝缘层在读取传感器和屏蔽之间形成热阻。读取器磁隙中的导热非磁性层可以降低热阻而无需读取器磁隙的相应减小。

4. 发明授权

US07099122B2 Spin polarization enhancement artificial magnet 有权
标题翻译：旋转极化增强人造磁铁
公开(公告)号：US07099122B2
公开(公告)日：2006-08-29
申请号：US10737579
申请日：2003-12-16
申请人： Ge Yi , Robert W. Lamberton , Susan Jane Tara Murdoch , Thomas K. McLaughlin , William J. O'Kane
发明人： Ge Yi , Robert W. Lamberton , Susan Jane Tara Murdoch , Thomas K. McLaughlin , William J. O'Kane
IPC分类号： G11B5/39
CPC分类号： B82Y10/00 , G11B5/39
摘要： A spin polarization enhancement artificial (SPEA) magnet comprises combinations of positive spin asymmetry interfaces and inverse spin asymmetry interfaces arranged antiferromagnetically such that current passed through the SPEA magnet has enhanced spin polarization. The SPEA magnet additionally may combine bulk material properties of electron scattering to either supplement or replace the interfacial spin differentiation. A basic functional unit of the SPEA magnet includes two ferromagnetic layers separated by two spacer layers. Each spacer forms an interface such that adjacent ferromagnetic layers produce different spin symmetry. Antiferromagnetic arrangement of adjacent ferromagnetic layers coordinates the different spin symmetries such that a single spin state is selected and also provides additional stabilization to the SPEA magnet.
摘要翻译：自旋极化增强人造（SPEA）磁体包括正自旋不对称界面和反向自旋非对称界面的组合，其反铁磁性布置，使得通过SPEA磁体的电流具有增强的自旋极化。 SPEA磁体另外可以将散射材料的电子散射特性与补充或替代界面旋转分化结合起来。 SPEA磁体的基本功能单元包括由两个间隔层隔开的两个铁磁层。每个间隔物形成界面，使得相邻的铁磁层产生不同的自旋对称性。相邻铁磁层的反铁磁布置协调不同的自旋对称性，使得选择单个自旋状态并且还为SPEA磁体提供额外的稳定性。

5. 发明授权

US08649125B1 Pole tip shield for a magnetic write element having notched or truncated side shields 有权
标题翻译：用于具有切口或截面侧屏蔽的磁性写入元件的极尖屏蔽
公开(公告)号：US08649125B1
公开(公告)日：2014-02-11
申请号：US13617328
申请日：2012-09-14
申请人： Swaraj Basu , Alex Yu Loong Wong , Muhammad Asif Bashir , Mark Gubbins , Robert W. Lamberton
发明人： Swaraj Basu , Alex Yu Loong Wong , Muhammad Asif Bashir , Mark Gubbins , Robert W. Lamberton
IPC分类号： G11B5/11
CPC分类号： G11B5/315 , G11B5/11 , G11B5/1278 , G11B5/23 , G11B5/3116
摘要： The application discloses pole tip shield assemblies for a magnetic write element. The shield assemblies disclosed include side shields to limit adjacent track interference. The side shields are truncated or notched at a midpoint to form an expanded non-magnetic gap along a trailing portion of the pole tip to enhance write field and/or field gradient. The expanded non-magnetic gap region is larger than the non-magnetic gap region along a leading portion of the pole tip.
摘要翻译：本申请公开了用于磁写入元件的极尖屏蔽组件。所公开的屏蔽组件包括限制相邻磁道干扰的侧屏蔽。侧屏在中点处被截断或切口以沿着极尖的尾部形成扩展的非磁性间隙，以增强写场和/或场梯度。扩大的非磁性间隙区域大于沿磁极尖端的前端的非磁隙区域。

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