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1. 发明授权

US08361879B2 Stress-inducing structures, methods, and materials 有权
标题翻译：应力诱导结构，方法和材料
公开(公告)号：US08361879B2
公开(公告)日：2013-01-29
申请号：US12122849
申请日：2008-05-19
申请人： Alois Gutmann , Roland Hampp , Scott Jansen
发明人： Alois Gutmann , Roland Hampp , Scott Jansen
IPC分类号： H01L21/76
CPC分类号： H01L29/7846 , H01L21/76232 , H01L29/06 , H01L29/0653 , H01L29/12 , H01L29/78 , H01L29/7848
摘要： Stress-inducing structures, methods, and materials are disclosed. In one embodiment, an isolation region includes an insulating material in a lower portion of a trench formed in a workpiece and a stress-inducing material disposed in a top portion of the trench over the insulating material.
摘要翻译：公开了应力诱导结构，方法和材料。在一个实施例中，隔离区域包括在工件中形成的沟槽的下部中的绝缘材料和设置在绝缘材料上方的沟槽顶部的应力诱导材料。

2. 发明授权

US08159038B2 Self aligned silicided contacts 有权
标题翻译：自对准硅化物接触
公开(公告)号：US08159038B2
公开(公告)日：2012-04-17
申请号：US12040409
申请日：2008-02-29
申请人： Roland Hampp
发明人： Roland Hampp
IPC分类号： H01L29/78
CPC分类号： H01L21/76895 , H01L21/28518 , H01L21/31144 , H01L21/76816 , H01L21/76829 , H01L21/76834 , H01L21/76885 , H01L21/76889 , H01L21/76897 , H01L23/485 , H01L29/66545 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： Structures and methods of forming self aligned silicided contacts are disclosed. The structure includes a gate electrode disposed over an active area, a liner disposed over the gate electrode and at least a portion of the active area, an insulating layer disposed over the liner. A first contact plug is disposed in the insulating layer and the liner, the first contact plug disposed above and in contact with a portion of the active area, the first contact plug including a first conductive material. A second contact plug is disposed in the insulating layer and the liner, the second contact plug disposed above and in contact with a portion of the gate electrode, the second contact plug includes the first conductive material. A contact material layer is disposed in the active region, the contact material layer disposed under the first contact plug and includes the first conductive material.
摘要翻译：公开了形成自对准硅化物触点的结构和方法。该结构包括设置在有源区上的栅电极，设置在栅极上的衬垫和有源区的至少一部分，设置在衬垫上的绝缘层。第一接触插塞设置在绝缘层和衬垫中，第一接触插头设置在有源区域的一部分上方并与其接触，第一接触插塞包括第一导电材料。第二接触插塞设置在绝缘层和衬垫中，第二接触插塞设置在栅电极的一部分上方并与其接触，第二接触插塞包括第一导电材料。接触材料层设置在有源区域中，接触材料层设置在第一接触插塞下方并且包括第一导电材料。

3. 发明授权

US07947606B2 Methods of forming conductive features and structures thereof 有权
标题翻译：形成导电特征的方法及其结构
公开(公告)号：US07947606B2
公开(公告)日：2011-05-24
申请号：US12129479
申请日：2008-05-29
申请人： Jiang Yan , Roland Hampp , Jin-Ping Han , Manfred Eller , Alois Gutmann
发明人： Jiang Yan , Roland Hampp , Jin-Ping Han , Manfred Eller , Alois Gutmann
IPC分类号： H01L21/311
CPC分类号： H01L21/76804 , H01L21/823807 , H01L29/7843 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming features and structures thereof are disclosed. In one embodiment, a method of forming a feature includes forming a first material over a workpiece, forming a first pattern for a lower portion of the feature in the first material, and filling the first pattern with a sacrificial material. A second material is formed over the first material and the sacrificial material, and a second pattern for an upper portion of the feature is formed in the second material. The sacrificial material is removed. The first pattern and the second pattern are filled with a third material.
摘要翻译：公开了形成特征及其结构的方法。在一个实施例中，形成特征的方法包括在工件上形成第一材料，形成用于第一材料中特征的下部的第一图案，以及用牺牲材料填充第一图案。在第一材料和牺牲材料上形成第二材料，并且在第二材料中形成用于特征的上部的第二图案。牺牲材料被去除。第一图案和第二图案填充有第三材料。

4. 发明申请

US20090294986A1 Methods of Forming Conductive Features and Structures Thereof 有权
标题翻译：形成导电特性及结构的方法
公开(公告)号：US20090294986A1
公开(公告)日：2009-12-03
申请号：US12129479
申请日：2008-05-29
申请人： Jiang Yan , Roland Hampp , Jin-Ping Han , Manfred Eller , Alois Gutmann
发明人： Jiang Yan , Roland Hampp , Jin-Ping Han , Manfred Eller , Alois Gutmann
IPC分类号： H01L23/52 , H01L21/4763 , H01L21/8238
CPC分类号： H01L21/76804 , H01L21/823807 , H01L29/7843 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming features and structures thereof are disclosed. In one embodiment, a method of forming a feature includes forming a first material over a workpiece, forming a first pattern for a lower portion of the feature in the first material, and filling the first pattern with a sacrificial material. A second material is formed over the first material and the sacrificial material, and a second pattern for an upper portion of the feature is formed in the second material. The sacrificial material is removed. The first pattern and the second pattern are filled with a third material.
摘要翻译：公开了形成特征及其结构的方法。在一个实施例中，形成特征的方法包括在工件上形成第一材料，形成用于第一材料中特征的下部的第一图案，以及用牺牲材料填充第一图案。在第一材料和牺牲材料上形成第二材料，并且在第二材料中形成用于特征的上部的第二图案。牺牲材料被去除。第一图案和第二图案填充有第三材料。

5. 发明申请

US20070205489A1 Methods of fabricating isolation regions of semiconductor devices and structures thereof 有权
标题翻译：制造半导体器件的隔离区域的方法及其结构
公开(公告)号：US20070205489A1
公开(公告)日：2007-09-06
申请号：US11365226
申请日：2006-03-01
申请人： Armin Tilke , Marcus Culmsee , Chris Stapelmann , Bee Hong , Roland Hampp
发明人： Armin Tilke , Marcus Culmsee , Chris Stapelmann , Bee Hong , Roland Hampp
IPC分类号： H01L29/06
CPC分类号： H01L29/0649 , H01L21/02271 , H01L21/76229 , H01L21/76232
摘要： Methods of fabricating isolation regions of semiconductor devices and structures thereof are disclosed. In a preferred embodiment, a semiconductor device includes a workpiece and at least one trench formed in the workpiece. The at least one trench includes sidewalls, a bottom surface, a lower portion, and an upper portion. A first liner is disposed over the sidewalls and the bottom surface of the at least one trench. A second liner is disposed over the first liner in the lower portion of the at least one trench. A first insulating material is disposed over the second liner in the lower portion of the at least one trench. A second insulating material is disposed over the first insulating material in the upper portion of the at least one trench. The first liner, the second liner, the first insulating material, and the second insulating material comprise an isolation region of the semiconductor device.
摘要翻译：公开了制造半导体器件的隔离区域的方法及其结构。在优选实施例中，半导体器件包括工件和形成在工件中的至少一个沟槽。所述至少一个沟槽包括侧壁，底面，下部和上部。第一衬垫设置在所述至少一个沟槽的侧壁和底表面上。第二衬垫设置在至少一个沟槽的下部中的第一衬垫之上。第一绝缘材料设置在至少一个沟槽的下部中的第二衬垫上。第二绝缘材料设置在至少一个沟槽的上部中的第一绝缘材料之上。第一衬垫，第二衬垫，第一绝缘材料和第二绝缘材料包括半导体器件的隔离区域。

6. 发明授权

US08187962B2 Self aligned silicided contacts 有权
公开(公告)号：US08187962B2
公开(公告)日：2012-05-29
申请号：US12754294
申请日：2010-04-05
申请人： Roland Hampp
发明人： Roland Hampp
IPC分类号： H01L21/3205
CPC分类号： H01L21/76895 , H01L21/28518 , H01L21/31144 , H01L21/76816 , H01L21/76829 , H01L21/76834 , H01L21/76885 , H01L21/76889 , H01L21/76897 , H01L23/485 , H01L29/66545 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： Structures and methods of forming self aligned silicided contacts are disclosed. The structure includes a gate electrode disposed over an active area, a liner disposed over the gate electrode and at least a portion of the active area, an insulating layer disposed over the liner. A first contact plug is disposed in the insulating layer and the liner, the first contact plug disposed above and in contact with a portion of the active area, the first contact plug including a first conductive material. A second contact plug is disposed in the insulating layer and the liner, the second contact plug disposed above and in contact with a portion of the gate electrode, the second contact plug includes the first conductive material. A contact material layer is disposed in the active region, the contact material layer disposed under the first contact plug and includes the first conductive material.

7. 发明授权

US07795107B2 Method for forming isolation structures 有权
标题翻译：形成隔离结构的方法
公开(公告)号：US07795107B2
公开(公告)日：2010-09-14
申请号：US12552352
申请日：2009-09-02
申请人： Roland Hampp , Alois Gutmann , Jin-Ping Han , O Sung Kwon
发明人： Roland Hampp , Alois Gutmann , Jin-Ping Han , O Sung Kwon
IPC分类号： H01L21/762
CPC分类号： H01L21/823878 , H01L21/823807 , H01L29/665 , H01L29/6659 , H01L29/7833 , H01L29/7846
摘要： A trench is formed in the surface of a provided semiconductor body. An oxide is deposited in the trench and a cap is deposited on the oxide, wherein the combination of the cap and the oxide impart a mechanical stress on the semiconductor body.
摘要翻译：在所提供的半导体本体的表面中形成沟槽。在沟槽中沉积氧化物，并且在氧化物上沉积帽，其中帽和氧化物的组合在半导体本体上赋予机械应力。

8. 发明申请

US20090317957A1 Method for Forming Isolation Structures 有权
标题翻译：形成隔离结构的方法
公开(公告)号：US20090317957A1
公开(公告)日：2009-12-24
申请号：US12552352
申请日：2009-09-02
申请人： Roland Hampp , Alois Gutmann , Jin-Ping Han , O Sung Kwon
发明人： Roland Hampp , Alois Gutmann , Jin-Ping Han , O Sung Kwon
IPC分类号： H01L21/762 , H01L21/336
CPC分类号： H01L21/823878 , H01L21/823807 , H01L29/665 , H01L29/6659 , H01L29/7833 , H01L29/7846
摘要： A trench is formed in the surface of a provided semiconductor body. An oxide is deposited in the trench and a cap is deposited on the oxide, wherein the combination of the cap and the oxide impart a mechanical stress on the semiconductor body.
摘要翻译：在所提供的半导体本体的表面中形成沟槽。在沟槽中沉积氧化物，并且在氧化物上沉积帽，其中帽和氧化物的组合在半导体本体上赋予机械应力。

9. 发明申请

US20080315267A1 Device Performance Improvement Using FlowFill as Material for Isolation Structures 有权
标题翻译：使用FlowFill作为隔离结构材料的设备性能改进
公开(公告)号：US20080315267A1
公开(公告)日：2008-12-25
申请号：US11766234
申请日：2007-06-21
申请人： Roland Hampp , Alois Gutmann , Jin-Ping Han , O Sung Kwon
发明人： Roland Hampp , Alois Gutmann , Jin-Ping Han , O Sung Kwon
IPC分类号： H01L29/94 , H01L21/76 , H01L29/06
CPC分类号： H01L21/823878 , H01L21/823807 , H01L29/665 , H01L29/6659 , H01L29/7833 , H01L29/7846
摘要： A trench is formed in the surface of a provided semiconductor body. An oxide is deposited in the trench and a cap is deposited on the oxide, wherein the combination of the cap and the oxide impart a mechanical stress on the semiconductor body.
摘要翻译：在所提供的半导体本体的表面中形成沟槽。在沟槽中沉积氧化物，并且在氧化物上沉积帽，其中帽和氧化物的组合在半导体本体上赋予机械应力。

10. 发明申请

US20080311711A1 Gapfill for metal contacts 审中-公开
标题翻译： Gapfill金属接触
公开(公告)号：US20080311711A1
公开(公告)日：2008-12-18
申请号：US11818197
申请日：2007-06-13
申请人： Roland Hampp , Jun-Keun Kwak , Keith Kwong Hon Wong
发明人： Roland Hampp , Jun-Keun Kwak , Keith Kwong Hon Wong
IPC分类号： H01L21/4763 , H01L21/336
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/76814 , H01L21/76865 , H01L23/485 , H01L29/665 , H01L29/7833
摘要： A method of making a semiconductor interconnect is disclosed. A semiconductor body on which a transistor comprising a doped region is formed is provided. A dielectric region is formed over the doped region, and a contact hole is formed in the dielectric to expose the doped region. The contact hole is cleaned and a first layer of metal is formed over a bottom and sidewalls of the contact hole. The first layer of metal is thinned so that the thickness of the first layer of metal on the sidewalls is made more uniform. A barrier is formed over the first layer of metal and the contact hole is filled with conductive material.
摘要翻译：公开了制造半导体互连的方法。提供了形成有包括掺杂区域的晶体管的半导体主体。在掺杂区域上形成电介质区域，并且在电介质中形成接触孔以暴露掺杂区域。接触孔被清洁，第一层金属形成在接触孔的底部和侧壁上。使第一金属层变薄，使得侧壁上的第一金属层的厚度更均匀。在第一金属层上形成屏障，并且接触孔填充有导电材料。

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