专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08107201B2 Hard bias design for extra high density recording 有权
标题翻译：用于超高密度记录的硬偏置设计
公开(公告)号：US08107201B2
公开(公告)日：2012-01-31
申请号：US12660908
申请日：2010-03-05
申请人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
发明人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.
摘要翻译：用于偏置读取头内的MR元件中的自由层的硬偏置结构由具有Co78.6Cr5.2Pt16.2 / Co65Cr15Pt20配置的复合硬偏置层组成。 Co65Cr15Pt20上层具有较大的Hc值，厚度约为Co78.6Cr5.2Pt16.2层的2〜10倍。硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。可选地，Co78.6Cr5.2Pt16.2层的厚度为零，Co65Cr15Pt20层形成在BCC底层上。本发明还包括层压硬偏置结构。可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

2. 发明授权

US07979978B2 Method for manufacturing a self-aligned full side shield PMR 有权
标题翻译：制造自对准全侧护罩PMR的方法
公开(公告)号：US07979978B2
公开(公告)日：2011-07-19
申请号：US11728910
申请日：2007-03-27
申请人： Cherng-Chyi Han , Min Li , Fenglin Liu , Chen-Jung Chien
发明人： Cherng-Chyi Han , Min Li , Fenglin Liu , Chen-Jung Chien
IPC分类号： G11B5/187
CPC分类号： G11B5/1278 , G11B5/112 , G11B5/3146 , G11B5/315 , G11B5/3163 , G11B5/3169 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T428/1193
摘要： A process for forming the write pole of a PMR head is described. This write pole is symmetrically located relative to its side shields, This is accomplished, not through optical alignment, but by coating the pole with a uniform layer of non-magnetic material of a predetermined and precise thickness, followed by the formation of the shield layer around this.
摘要翻译：描述了用于形成PMR头的写入极的过程。该写入极相对于其侧屏对称地定位，这不是通过光学对准而是通过用预定和精确厚度的均匀的非磁性材料层涂覆极，然后形成屏蔽层围绕这一点。

3. 发明授权

US07773341B2 Laminated film for head applications 有权
标题翻译：用于头部应用的层压膜
公开(公告)号：US07773341B2
公开(公告)日：2010-08-10
申请号：US11825034
申请日：2007-07-03
申请人： Kunliang Zhang , Min Zheng , Min Li , Chen-Jung Chien , Cherng-Chyi Han
发明人： Kunliang Zhang , Min Zheng , Min Li , Chen-Jung Chien , Cherng-Chyi Han
IPC分类号： G11B5/33
CPC分类号： G11B5/3116 , G11B5/1278
摘要： A laminated main pole layer is disclosed in which a non-AFC scheme is used to break the magnetic coupling between adjacent high moment layers and reduce remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. An amorphous material layer with a thickness of 3 to 20 Angstroms and made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, or Si is inserted between adjacent high moment stacks. The laminated structure also includes an alignment layer below each high moment layer within each stack. In one embodiment, a Ru coupling layer is inserted between two high moment layers in each stack to introduce an AFC scheme. An uppermost Ru layer is used as a CMP stop layer. A post annealing process may be employed to further reduce the anisotropy field (Hk).
摘要翻译：公开了一种层叠主极层，其中使用非AFC方案来破坏相邻的高力矩层之间的磁耦合，并且在保持高磁矩的同时降低硬轴方向的剩磁，并实现Hch，Hce和 Hk。由Hf，Zr，Ta，Al，Mg，Zn或Si中的一种或多种的氧化物，氮化物或氧氮化物形成的厚度为3〜20埃的无定形材料层插入相邻的高强度叠层之间。层叠结构还包括在每个堆叠内的每个高力矩层下面的对准层。在一个实施例中，Ru耦合层插入每个堆叠中的两个高矩层之间以引入AFC方案。使用最上层的Ru层作为CMP停止层。可以采用后退火工艺来进一步降低各向异性场（Hk）。

4. 发明申请

US20090323227A1 Ta/W film as heating device for dynamic fly height adjustment 有权
标题翻译： Ta / W薄膜作为动态飞行高度调节的加热装置
公开(公告)号：US20090323227A1
公开(公告)日：2009-12-31
申请号：US12215825
申请日：2008-06-30
申请人： Min Zheng , Min Li , Chen-Jung Chien , Kowang Liu , Sung Chung
发明人： Min Zheng , Min Li , Chen-Jung Chien , Kowang Liu , Sung Chung
IPC分类号： G11B5/33
CPC分类号： G11B5/314 , G11B5/6064
摘要： A dynamic fly heater (DFH) for improved lifetime and better film uniformity is disclosed for a magnetic head. The heater has a lower amorphous Ta layer and an upper W layer to promote small grain size and reduced electro-migration. The composite film is especially advantageous for heaters greater than 1000 Angstroms thick where dR/R is difficult to control in the prior art. The DFH may be a (Ta/W)n laminate in which the Ta layers are about 30 Angstroms thick and the combined thickness of the W layers is from 400 to 1200 Angstroms. A Ta film is preferably sputter deposited with an Ar pressure of 3 to 5 mTorr and the W film is sputter deposited in the same chamber with a 3 to 20 mTorr Ar pressure. In one embodiment, a merged read/write head has one DFH in the read head and a second DFH in the write head.
摘要翻译：公开了一种用于改善寿命和更好的膜均匀性的动态飞行加热器（DFH）。加热器具有较低的非晶Ta层和上W层，以促进小晶粒尺寸和减少的电迁移。复合膜对于现有技术中dR / R难以控制的大于1000埃的加热器是特别有利的。 DFH可以是（Ta / W）n层叠体，其中Ta层的厚度约为30埃，W层的组合厚度为400至1200埃。优选以3至5mTorr的Ar压力溅射沉积Ta膜，并将W膜以3至20mTorr Ar压力溅射沉积在相同的室中。在一个实施例中，合并的读/写头在读头中具有一个DFH，在写头中具有第二DFH。

5. 发明授权

US07446987B2 Composite hard bias design with a soft magnetic underlayer for sensor applications 有权
标题翻译：复合硬偏置设计与传感器应用的软磁底层
公开(公告)号：US07446987B2
公开(公告)日：2008-11-04
申请号：US11016507
申请日：2004-12-17
申请人： Kunliang Zhang , Mao-Min Chen , Chyu-Jiuh Torng , Min Li , Chen-Jung Chien
发明人： Kunliang Zhang , Mao-Min Chen , Chyu-Jiuh Torng , Min Li , Chen-Jung Chien
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3932 , G11B2005/3996
摘要： A hard bias structure for biasing a free layer in a MR element within a magnetic read head is comprised of a soft magnetic underlayer such as NiFe and a hard bias layer comprised of Co78.6Cr5.2Pt16.2 or Co65Cr15Pt20 that are rigidly exchange coupled to ensure a well aligned longitudinal biasing direction with minimal dispersions. The hard bias structure is formed on a BCC seed layer such as CrTi to improve lattice matching. The hard bias structure may be laminated in which each of the underlayers and hard bias layers has a thickness that is adjusted to optimize the total Hc, Mrt, and S values. The present invention encompasses CIP and CPP spin values, MTJ devices, and multi-layer sensors. A larger process window for fabricating the hard bias structure is realized and lower asymmetry output and NBLW (normalized base line wandering) reject rates during a read operation are achieved.
摘要翻译：用于偏置磁读头内的MR元件中的自由层的硬偏压结构由诸如NiFe的软磁性底层和由Co ++ 78.6Cr 5.2构成的硬偏置层组成，或刚性交换耦合以确保良好对准的/SUB>Pt_{16.2 或Co 15 Cr 15 纵向偏置方向最小分散。在诸如CrTi的BCC种子层上形成硬偏压结构以改善晶格匹配。可以层压硬偏压结构，其中每个底层和硬偏压层具有被调节以使总H c，M L t和S的最大值的厚度价值观。本发明包括CIP和CPP旋转值，MTJ装置和多层传感器。实现了用于制造硬偏置结构的更大的工艺窗口，并且实现了在读取操作期间较低的不对称输出和NBLW（归一化的基线漂移）拒绝率。}

6. 发明申请

US20070045758A1 Bottom conductor for integrated MRAM 有权
公开(公告)号：US20070045758A1
公开(公告)日：2007-03-01
申请号：US11215276
申请日：2005-08-30
申请人： Wei Cao , Chyu-Jiuh Torng , Cheng Horng , Ruying Tong , Chen-Jung Chien , Liubo Hong
发明人： Wei Cao , Chyu-Jiuh Torng , Cheng Horng , Ruying Tong , Chen-Jung Chien , Liubo Hong
IPC分类号： H01L43/00
CPC分类号： H01L43/12 , H01L27/228
摘要： A structure that is well suited to connecting an MTJ device to a CMOS integrated circuit is described. It is built out of three layers. The bottom layer serves as a seed layer for the center layer, which is alpha tantalum, while the third, topmost, layer is selected for its smoothness, its compatibility with the inter-layer dielectric materials, and its ability to protect the underlying tantalum. A method for its formation is also described.

7. 发明授权

US07061730B2 Robust hard bias/conductor lead structures for future GMR heads 失效
标题翻译：坚固的硬偏置/导体引线结构，用于未来的GMR磁头
公开(公告)号：US07061730B2
公开(公告)日：2006-06-13
申请号：US10649456
申请日：2003-08-27
申请人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Chyu-Jiuh Torng , Ru-Ying Tong
发明人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Chyu-Jiuh Torng , Ru-Ying Tong
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , G11B5/4853 , G11B5/486 , H01F10/324 , H01F10/3268
摘要： A spin-valve magnetoresistive read element has a thin conductive lead layer of high sheet conductivity, high hardness, high melting point, high corrosion resistance and lacking the propensity for smearing, oozing, electromigration and nodule formation. Said lead layer is formed upon the hard magnetic longitudinal bias layer of an abutted junction spin-valve type magnetoresistive read head and said read head is therefore suitable for reading high density recorded disks at high RPM.
摘要翻译：自旋阀磁阻读取元件具有导电性高，硬度高，熔点高，耐腐蚀性高，缺乏涂抹，渗出，电迁移和结核形成倾向的薄导电铅层。所述引线层形成在接触自旋阀型磁阻读取头的硬磁纵向偏置层上，因此所述读头适用于以高RPM读取高密度记录盘。

8. 发明授权

US06447689B1 Protective layer for continuous GMR design using reverse photo mask 失效
标题翻译：使用反光掩模进行连续GMR设计的保护层
公开(公告)号：US06447689B1
公开(公告)日：2002-09-10
申请号：US09584424
申请日：2000-06-05
申请人： Chyu-Jiuh Torng , Chen-Jung Chien , Kochan Ju , Jei-Wei Chang
发明人： Chyu-Jiuh Torng , Chen-Jung Chien , Kochan Ju , Jei-Wei Chang
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3163 , G11B5/3903 , H01F41/308
摘要： An improved process for manufacturing a spin valve structure that has buried leads is disclosed. A key feature is the inclusion in the process of a temporary protective layer over the seed layer on which the spin valve structure will be grown. This protective layer is in place at the time that photoresist (used to define the location of the spin valve relative to the buried leads and longitudinal bias layers) is removed. The protective layer is later removed as a natural byproduct of surface cleanup just prior to the formation of the spin valve itself.
摘要翻译：公开了一种制造具有埋地引线的自旋阀结构的改进方法。一个关键特征是在自旋阀结构将在其上生长的种子层上包含临时保护层的过程。该保护层在光刻胶（用于限定自旋阀相对于埋入引线和纵向偏置层的位置）被去除时就位。在形成自旋阀本身之前，保护层随后被除去，作为表面清洁的天然副产物。

9. 发明授权

US06428714B1 Protective layer for continuous GMR design 失效
标题翻译：连续GMR设计的保护层
公开(公告)号：US06428714B1
公开(公告)日：2002-08-06
申请号：US09584426
申请日：2000-06-05
申请人： Chyu-Jiuh Torng , Chen-Jung Chien , Kochan Ju , Jei-Wei Chang
发明人： Chyu-Jiuh Torng , Chen-Jung Chien , Kochan Ju , Jei-Wei Chang
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , H01F41/308
摘要： An improved process for manufacturing a spin valve structure that has buried leads is disclosed. A key feature is the inclusion in the process of a temporary protective layer over the seed layer on which the spin valve structure will be grown. This protective layer remains in place while the buried leads as well as longitudinal bias means are formed. Processing includes use of photoresist liftoff. The protective layer is removed as a natural byproduct of surface cleanup just prior the formation of the spin valve.
摘要翻译：公开了一种制造具有埋地引线的自旋阀结构的改进方法。一个关键特征是在自旋阀结构将在其上生长的种子层上包含临时保护层的过程。该保护层保持原位，同时形成埋入引线以及纵向偏置装置。处理包括使用光致抗蚀剂剥离。在形成自旋阀之前，保护层作为表面清洁的天然副产物被去除。

10. 发明申请

US20090009907A1 Laminated film for head applications 有权
标题翻译：用于头部应用的层压膜
公开(公告)号：US20090009907A1
公开(公告)日：2009-01-08
申请号：US11825034
申请日：2007-07-03
申请人： Kunliang Zhang , Min Zheng , Min Li , Chen-Jung Chien , Cherng-Chyi Han
发明人： Kunliang Zhang , Min Zheng , Min Li , Chen-Jung Chien , Cherng-Chyi Han
IPC分类号： G11B5/127 , G11B5/147
CPC分类号： G11B5/3116 , G11B5/1278
摘要： A laminated main pole layer is disclosed in which a non-AFC scheme is used to break the magnetic coupling between adjacent high moment layers and reduce remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. An amorphous material layer with a thickness of 3 to 20 Angstroms and made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, or Si is inserted between adjacent high moment stacks. The laminated structure also includes an alignment layer below each high moment layer within each stack. In one embodiment, a Ru coupling layer is inserted between two high moment layers in each stack to introduce an AFC scheme. An uppermost Ru layer is used as a CMP stop layer. A post annealing process may be employed to further reduce the anisotropy field (Hk).
摘要翻译：公开了一种层叠主极层，其中使用非AFC方案来破坏相邻的高力矩层之间的磁耦合，并且在保持高磁矩的同时降低硬轴方向的剩磁，并实现Hch，Hce和 Hk。由Hf，Zr，Ta，Al，Mg，Zn或Si中的一种或多种的氧化物，氮化物或氧氮化物形成的厚度为3〜20埃的无定形材料层插入相邻的高强度叠层之间。层叠结构还包括在每个堆叠内的每个高力矩层下面的对准层。在一个实施例中，Ru耦合层插入每个堆叠中的两个高矩层之间以引入AFC方案。使用最上层的Ru层作为CMP停止层。可以采用后退火工艺来进一步降低各向异性场（Hk）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式