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1. 发明授权

US08546151B2 Method for manufacturing magnetic storage device and magnetic storage device 有权
标题翻译：磁存储装置和磁存储装置的制造方法
公开(公告)号：US08546151B2
公开(公告)日：2013-10-01
申请号：US12528854
申请日：2008-02-25
申请人： Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuya Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
发明人： Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuya Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , B82Y10/00 , H01L27/228
摘要： Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.
摘要翻译：公开了一种制造包括TMR元件的磁存储装置的方法，该方法包括在具有布线层的层间绝缘膜上形成绝缘膜的步骤，用于在绝缘膜上形成开口的开口形成步骤，布线层暴露于其中，金属层形成步骤用于在绝缘层上形成金属层以使其开口被填充; CMP步骤，用于通过CMP方法在绝缘层上抛光和去除金属层，并形成金属剩余在开口中的层形成下电极，以及在下电极上形成TMR元件的步骤。还公开了一种磁存储装置，其包括设置有布线层的层间绝缘膜，形成在层间绝缘膜上的绝缘膜，形成在绝缘膜中的开口，使得布线层暴露于其中，阻挡金属层设置为为了覆盖开口的内表面，形成在阻挡金属上以便填充开口的下电极和形成在下电极上的TMR元件。

2. 发明授权

US08518562B2 Magnetic storage device 有权
标题翻译：磁存储装置
公开(公告)号：US08518562B2
公开(公告)日：2013-08-27
申请号：US12617469
申请日：2009-11-12
申请人： Takashi Takenaga , Takeharu Kuroiwa , Hiroshi Takada , Ryoji Matsuda , Yosuke Takeuchi
发明人： Takashi Takenaga , Takeharu Kuroiwa , Hiroshi Takada , Ryoji Matsuda , Yosuke Takeuchi
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： G11B5/66 , G11C11/16 , G11C11/161 , G11C11/1659 , Y10T428/1143
摘要： A magnetic storage device stable in write characteristic is provided. A first nonmagnetic film is provided over a recording layer. A first ferromagnetic film is provided over the first nonmagnetic film and has a first magnetization and a first film thickness. A second nonmagnetic film is provided over the first ferromagnetic film. A second ferromagnetic film is provided over the second nonmagnetic film, is coupled in antiparallel with the first ferromagnetic film, and has a second magnetization and a second film thickness. An antiferromagnetic film is provided over the second ferromagnetic film. The sum of the product of the first magnetization and the first film thickness and the product of the second magnetization and the second film thickness is smaller than the product of the magnetization of the recording layer and the film thickness of the recording layer.
摘要翻译：提供了一种写入特性稳定的磁存储装置。在记录层上提供第一非磁性膜。第一铁磁膜设置在第一非磁性膜上并具有第一磁化强度和第一膜厚度。在第一铁磁膜上设置第二非磁性膜。第二铁磁膜设置在第二非磁性膜上方，与第一铁磁膜反向并联，并具有第二磁化强度和第二膜厚度。在第二铁磁膜上设置反铁磁性膜。第一磁化强度与第一膜厚度的乘积和第二磁化强度与第二膜厚度的乘积的和小于记录层的磁化强度与记录层的膜厚度的乘积。

3. 发明授权

US08258592B2 Semiconductor device including a magnetic tunnel junction device including a laminated structure and manufacturing method therefor 有权
标题翻译：包括具有叠层结构的磁性隧道结装置及其制造方法的半导体装置
公开(公告)号：US08258592B2
公开(公告)日：2012-09-04
申请号：US12463865
申请日：2009-05-11
申请人： Ryoji Matsuda , Shuichi Ueno , Haruo Furuta , Takashi Takenaga , Takeharu Kuroiwa
发明人： Ryoji Matsuda , Shuichi Ueno , Haruo Furuta , Takashi Takenaga , Takeharu Kuroiwa
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： A semiconductor device having a MTJ device excellent in operating characteristics and a manufacturing method therefor are provided. The MTJ device is formed of a laminated structure which is obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower and upper magnetic films contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlOx) as a constituent material. A CAP layer is formed over the upper magnetic film and a hard mask is formed over the CAP layer. The CAP layer contains a substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a substance of crystalline tantalum (Ta) as a constituent material. The film thickness of the hard mask is larger than that of the CAP layer.
摘要翻译：提供一种具有优异的操作特性的MTJ装置的半导体装置及其制造方法。 MTJ装置由层叠结构形成，其通过依次层叠下磁性膜，隧道绝缘膜和上磁性膜而获得。下部和上部磁性膜含有非结晶或微晶铁硼（CoFeB）作为构成材料。隧道绝缘膜包含氧化铝（AlOx）作为构成材料。在上磁性膜上形成CAP层，在CAP层上形成硬掩模。 CAP层包含结晶钌（Ru）作为构成材料的物质，硬掩模含有结晶钽（Ta）作为构成材料的物质。硬掩模的膜厚大于CAP层的膜厚。

4. 发明申请

US20090269860A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20090269860A1
公开(公告)日：2009-10-29
申请号：US12411665
申请日：2009-03-26
申请人： Tatsunori MURATA , Mikio Tsujiuchi , Ryoji Matsuda
发明人： Tatsunori MURATA , Mikio Tsujiuchi , Ryoji Matsuda
IPC分类号： H01L43/12
CPC分类号： H01L27/228 , G11C11/16
摘要： To provide a manufacturing method of a semiconductor device capable of forming, as a protective film of an MTJ element, a silicon nitride film having good insulation properties without deteriorating the properties of the MTJ element. The method of the invention includes steps of forming a silicon nitride film over the entire surface including an MTJ element portion (MTJ element and an upper electrode) while using a parallel plate plasma CVD apparatus as a film forming apparatus and a film forming gas not containing NH3 but composed of SiH4/N2/helium (He). The film forming temperature is set at from 200 to 350° C. More ideally, a flow rate ratio of He to SiH4 is set at from 100 to 125.
摘要翻译：为了提供能够形成具有良好绝缘性能的氮化硅膜作为MTJ元件的保护膜的半导体器件的制造方法，而不会劣化MTJ元件的性质。本发明的方法包括以下步骤：在使用平板等离子体CVD装置作为成膜装置的同时，在包括MTJ元件部分（MTJ元件和上电极）的整个表面上形成氮化硅膜，以及不含 NH3，但由SiH4 / N2 /氦（He）组成。成膜温度设定在200〜350℃。更理想的是，将He与SiH4的流量比设定为100〜125。

5. 发明授权

US08216859B2 Manufacturing method of semiconductor device having memory element with protective film 有权
标题翻译：具有保护膜的存储元件的半导体器件的制造方法
公开(公告)号：US08216859B2
公开(公告)日：2012-07-10
申请号：US13069982
申请日：2011-03-23
申请人： Tatsunori Murata , Mikio Tsujiuchi , Ryoji Matsuda
发明人： Tatsunori Murata , Mikio Tsujiuchi , Ryoji Matsuda
IPC分类号： H01L21/00
CPC分类号： H01L27/228 , G11C11/16
摘要： To provide a manufacturing method of a semiconductor device capable of forming, as a protective film of an MTJ element, a silicon nitride film having good insulation properties without deteriorating the properties of the MTJ element. The method of the invention includes steps of forming a silicon nitride film over the entire surface including an MTJ element portion (MTJ element and an upper electrode) while using a parallel plate plasma CVD apparatus as a film forming apparatus and a film forming gas not containing NH3 but composed of SiH4/N2/helium (He). The film forming temperature is set at from 200 to 350° C. More ideally, a flow rate ratio of He to SiH4 is set at from 100 to 125.
摘要翻译：为了提供能够形成具有良好绝缘性能的氮化硅膜作为MTJ元件的保护膜的半导体器件的制造方法，而不会劣化MTJ元件的性能。本发明的方法包括以下步骤：在使用平板等离子体CVD装置作为成膜装置的同时，在包括MTJ元件部分（MTJ元件和上电极）的整个表面上形成氮化硅膜，以及不含 NH3，但由SiH4 / N2 /氦（He）组成。成膜温度设定在200〜350℃。更理想的是，将He与SiH4的流量比设定为100〜125。

6. 发明申请

US20110171755A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE HAVING MEMORY ELEMENT WITH PROTECTIVE FILM 有权
标题翻译：具有保护膜的记忆元件的半导体器件的制造方法
公开(公告)号：US20110171755A1
公开(公告)日：2011-07-14
申请号：US13069982
申请日：2011-03-23
申请人： Tatsunori MURATA , Mikio Tsujiuchi , Ryoji Matsuda
发明人： Tatsunori MURATA , Mikio Tsujiuchi , Ryoji Matsuda
IPC分类号： H01L21/02
CPC分类号： H01L27/228 , G11C11/16
摘要： To provide a manufacturing method of a semiconductor device capable of forming, as a protective film of an MTJ element, a silicon nitride film having good insulation properties without deteriorating the properties of the MTJ element. The method of the invention includes steps of forming a silicon nitride film over the entire surface including an MTJ element portion (MTJ element and an upper electrode) while using a parallel plate plasma CVD apparatus as a film forming apparatus and a film forming gas not containing NH3 but composed of SiH4/N2/helium (He). The film forming temperature is set at from 200 to 350° C. More ideally, a flow rate ratio of He to SiH4 is set at from 100 to 125.
摘要翻译：为了提供能够形成具有良好绝缘性能的氮化硅膜作为MTJ元件的保护膜的半导体器件的制造方法，而不会劣化MTJ元件的性能。本发明的方法包括以下步骤：在使用平板等离子体CVD装置作为成膜装置的同时，在包括MTJ元件部分（MTJ元件和上电极）的整个表面上形成氮化硅膜，以及不含 NH3，但由SiH4 / N2 /氦（He）组成。成膜温度设定在200〜350℃。更理想的是，将He与SiH4的流量比设定为100〜125。

7. 发明申请

US20110156182A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20110156182A1
公开(公告)日：2011-06-30
申请号：US12971988
申请日：2010-12-17
申请人： Yosuke TAKEUCHI , Masamichi Matsuoka , Ryoji Matsuda
发明人： Yosuke TAKEUCHI , Masamichi Matsuoka , Ryoji Matsuda
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , H01L27/228
摘要： To provide a semiconductor device capable of further suppressing the leakage of magnetic field in a magnetoresistive element and capable of further improving performance.There is provided a semiconductor device comprising a semiconductor substrate, a magnetoresistive element, a wire, barrier layers, and cladding layers. The semiconductor substrate has a main surface. The magnetoresistive element is located over the main surface of the semiconductor substrate. The wire is located over the magnetoresistive element. The barrier layers are arranged so as to continuously cover the side surface and the top surface of the wire. The cladding layers are arranged so as to continuously cover the surfaces of the barrier layers facing the wire and the surfaces on the opposite side. A plurality of memory units including the magnetoresistive element, the wire, the barrier layers, and the cladding layers is formed. The memory units are arranged in parallel in the direction intersecting with the direction in which the wire extends, and the cladding layers are separated between the memory units.
摘要翻译：提供能够进一步抑制磁阻元件中的磁场泄漏并能够进一步提高性能的半导体器件。提供了包括半导体衬底，磁阻元件，导线，阻挡层和包层的半导体器件。半导体衬底具有主表面。磁阻元件位于半导体衬底的主表面上方。导线位于磁阻元件上方。阻挡层被布置成连续地覆盖线的侧表面和顶表面。这些包覆层被布置成连续地覆盖面向导线的阻挡层的表面和相对侧的表面。形成包括磁阻元件，导线，阻挡层和包覆层的多个存储单元。存储单元在与线延伸的方向相交的方向上平行布置，并且包层在存储单元之间分离。

8. 发明申请

US20110121419A1 METHOD FOR MANUFACTURING A MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY DEVICE 审中-公开
标题翻译：用于制造磁记录装置和磁记忆装置的方法
公开(公告)号：US20110121419A1
公开(公告)日：2011-05-26
申请号：US13021079
申请日：2011-02-04
申请人： Shuichi UENO , Haruo Furuta , Ryoji Matsuda , Tatsuya Fukumura , Shin Hasegawa , Shinya Hirano , Hiroyuki Chibahara , Hiroshi Oshita
发明人： Shuichi UENO , Haruo Furuta , Ryoji Matsuda , Tatsuya Fukumura , Shin Hasegawa , Shinya Hirano , Hiroyuki Chibahara , Hiroshi Oshita
IPC分类号： H01L29/82
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228
摘要： A method for manufacturing a magnetic memory device which includes a TMR element, and the method includes: a step of forming a lower wiring layer; a step of forming an interlayer insulating layer on the lower wiring layer; a step of forming an opening in the interlayer insulating layer so that the lower wiring layer is exposed; a step of forming a barrier metal layer so that the interlayer insulating layer and an inner surface of the opening are covered; a step of forming a metal layer on the barrier metal layer so that the opening is embedded; a polishing step of removing the metal layer on the barrier metal layer through polishing using the barrier metal layer as a stopper so that a wiring layer that includes a metal layer being embedded in the opening and the barrier metal layer is formed; and an element fabricating step of fabricating a TMR element on the wiring layer.
摘要翻译：一种制造包括TMR元件的磁存储器件的方法，所述方法包括：形成下布线层的步骤; 在下布线层上形成层间绝缘层的步骤; 在所述层间绝缘层中形成开口以使所述下部布线层露出的步骤; 形成阻挡金属层以使得层间绝缘层和开口的内表面被覆盖的步骤; 在所述阻挡金属层上形成金属层以使得所述开口嵌入的步骤; 抛光步骤，通过使用阻挡金属层作为阻挡层进行研磨来去除阻挡金属层上的金属层，使得形成包含金属层的布线层嵌入开口和阻挡金属层中; 以及在所述布线层上制造TMR元件的元件制造步骤。

9. 发明授权

US07605420B2 Semiconductor tunneling magneto resistance device and method of manufacturing the same 失效
标题翻译：半导体隧道磁阻装置及其制造方法
公开(公告)号：US07605420B2
公开(公告)日：2009-10-20
申请号：US11593548
申请日：2006-11-07
申请人： Haruo Furuta , Ryoji Matsuda , Shuichi Ueno , Takeharu Kuroiwa
发明人： Haruo Furuta , Ryoji Matsuda , Shuichi Ueno , Takeharu Kuroiwa
IPC分类号： H01L43/00 , H01L29/76
CPC分类号： H01L43/08 , B82Y10/00 , H01L27/228 , H01L43/12
摘要： The semiconductor device which has a memory cell including the TMR film with which memory accuracy does not deteriorate, and its manufacturing method are obtained. A TMR element (a TMR film, a TMR upper electrode) is selectively formed in the region which corresponds in plan view on a TMR lower electrode in a part of formation area of a digit line. A TMR upper electrode is formed by 30-100 nm thickness of Ta, and functions also as a hard mask at the time of a manufacturing process. The interlayer insulation film formed from LT-SiN on the whole surface of a TMR element and the upper surface of a TMR lower electrode is formed, and the interlayer insulation film which covers the whole surface comprising the side surface of a TMR lower electrode, and includes LT-SiN is formed. The interlayer insulation film which covers the whole surface and includes SiO2 is formed.
摘要翻译：具有包含记忆精度不劣化的TMR膜的存储单元的半导体装置及其制造方法。在数字线的形成区域的一部分的TMR下电极的平面图中对应的区域选择性地形成TMR元件（TMR膜，TMR上电极）。 TMR上电极由Ta的30-100nm厚度形成，并且在制造过程中也用作硬掩模。在TMR元件的整个表面和TMR下电极的整个表面上形成由LT-SiN形成的层间绝缘膜，覆盖包括TMR下电极的侧表面的整个表面的层间绝缘膜和包括LT-SiN。形成覆盖整个表面并包含SiO 2的层间绝缘膜。

10. 发明授权

US08383427B2 Semiconductor device including a magnetic tunnel junction device including a laminated structure and manufacturing method therefor 有权
标题翻译：包括具有叠层结构的磁性隧道结装置及其制造方法的半导体装置
公开(公告)号：US08383427B2
公开(公告)日：2013-02-26
申请号：US13566739
申请日：2012-08-03
申请人： Ryoji Matsuda , Shuichi Ueno , Haruo Furuta , Takashi Takenaga , Takeharu Kuroiwa
发明人： Ryoji Matsuda , Shuichi Ueno , Haruo Furuta , Takashi Takenaga , Takeharu Kuroiwa
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： A semiconductor device having a MTJ device excellent in operating characteristics and a manufacturing method therefor are provided. The MTJ device is formed of a laminated structure which is obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower and upper magnetic films contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlOx) as a constituent material. A CAP layer is formed over the upper magnetic film and a hard mask is formed over the CAP layer. The CAP layer contains a substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a substance of crystalline tantalum (Ta) as a constituent material. The film thickness of the hard mask is larger than that of the CAP layer.
摘要翻译：提供一种具有优异的操作特性的MTJ装置的半导体装置及其制造方法。 MTJ装置由层叠结构形成，其通过依次层叠下磁性膜，隧道绝缘膜和上磁性膜而获得。下部和上部磁性膜含有非结晶或微晶铁硼（CoFeB）作为构成材料。隧道绝缘膜包含氧化铝（AlOx）作为构成材料。在上磁性膜上形成CAP层，在CAP层上形成硬掩模。 CAP层包含结晶钌（Ru）作为构成材料的物质，硬掩模含有结晶钽（Ta）作为构成材料的物质。硬掩模的膜厚大于CAP层的膜厚。

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