专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110156181A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件的半导体器件和制造方法
公开(公告)号：US20110156181A1
公开(公告)日：2011-06-30
申请号：US12971783
申请日：2010-12-17
申请人： Yosuke TAKEUCHI , Masamichi MATSUOKA , Ryoji MATSUDA , Keisuke TSUKAMOTO
发明人： Yosuke TAKEUCHI , Masamichi MATSUOKA , Ryoji MATSUDA , Keisuke TSUKAMOTO
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , H01L27/228 , H01L43/12
摘要： A semiconductor device is provided which can further suppress the leakage of a magnetic field in a magnetoresistive element, and which can further improve the performance of the semiconductor device. A semiconductor device includes a semiconductor substrate, a lower electrode, a magnetoresistive element, an upper electrode, and a protective film. The lower electrode is formed over a main surface of the semiconductor substrate. The magnetoresistive element includes a fixed layer, a tunneling insulating film, and a free layer. The upper electrode is disposed over the other main surface opposite to one main surface of the free layer opposed to the tunneling insulating film. The protective film covers the sides intersecting the main surfaces of the lower electrode, the fixed layer, the tunneling insulating film, the free layer, and the upper electrode. The fixed layer included in the magnetoresistive element is a layer which is disposed over one main surface of the lower electrode, and whose magnetization direction is fixed. The tunneling insulating film is disposed over the other main surface opposite to one main surface of the fixed layer opposed to the lower electrode. The free layer is a layer which is disposed over the other main surface opposite to one main surface of the tunneling insulating film opposed to the fixed layer, and whose magnetization direction is variable. The width of the upper electrode is smaller than that of each of the lower electrode and the fixed layer in the direction intersecting the lamination direction of the lower electrode, the fixed layer 35, the tunneling insulating film 38, the free layer, and the upper electrode.
摘要翻译：提供一种能够进一步抑制磁阻元件中的磁场的泄漏的半导体器件，能够进一步提高半导体器件的性能。半导体器件包括半导体衬底，下电极，磁阻元件，上电极和保护膜。下电极形成在半导体衬底的主表面上。磁阻元件包括固定层，隧道绝缘膜和自由层。上电极设置在与隧道绝缘膜相对的自由层的一个主表面相对的另一个主表面上。保护膜覆盖与下电极，固定层，隧道绝缘膜，自由层和上电极的主表面相交的侧面。包含在磁阻元件中的固定层是设置在下电极的一个主表面上并且其磁化方向固定的层。隧道绝缘膜设置在与下电极相对的固定层的一个主表面相对的另一主表面上。自由层是设置在与固定层相对的隧道绝缘膜的一个主表面相对的另一主表面上并且其磁化方向可变的层。上电极的宽度小于下电极和固定层中的每一个在与下电极，固定层35，隧道绝缘膜38，自由层和上层的层叠方向相交的方向上的宽度电极。

2. 发明申请

US20110101431A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110101431A1
公开(公告)日：2011-05-05
申请号：US12911558
申请日：2010-10-25
申请人： Yosuke TAKEUCHI , Mikio Tsujiuchi , Tatsunori Murata
发明人： Yosuke TAKEUCHI , Mikio Tsujiuchi , Tatsunori Murata
IPC分类号： H01L29/82 , H01L21/8239
CPC分类号： H01L27/228 , H01L21/76826 , H01L21/76834 , H01L21/76846 , H01L21/76883
摘要： To provide a technology capable of improving the property of an MRAM in a semiconductor device containing the MRAM.A plasma treatment is performed on the surface of an interlayer insulating film for which a wiring and a digit line are formed. Firstly, a semiconductor substrate is carried in a chamber, and a mixed gas that includes molecules containing nitrogen (ammonia gas) and inert molecules not containing nitrogen (hydrogen gas, helium, argon) is introduced into the chamber. On this occasion, the plasma treatment is performed by introducing the mixed gas under such a condition that the flow rate of the inert molecules not containing nitrogen is larger than that of the molecules containing nitrogen, and the mixed gas is turned into a plasma.
摘要翻译：提供能够提高包含MRAM的半导体器件中MRAM性能的技术。在形成布线和数字线的层间绝缘膜的表面上进行等离子体处理。首先，将半导体基板载置在室内，将包含氮（氨）的分子和不含氮的惰性分子（氢气，氦，氩））的混合气体引入室内。在这种情况下，通过在不含氮的惰性分子的流量比含有氮的分子的流量大的条件下引入混合气体进行等离子体处理，将混合气体变成等离子体。

3. 发明申请

US20100151276A1 MAGNETIC STORAGE DEVICE 有权
标题翻译：磁性存储器件
公开(公告)号：US20100151276A1
公开(公告)日：2010-06-17
申请号：US12617469
申请日：2009-11-12
申请人： Takashi Takenaga , Takeharu Kuroiwa , Hiroshi Takada , Ryoji Matsuda , Yosuke Takeuchi
发明人： Takashi Takenaga , Takeharu Kuroiwa , Hiroshi Takada , Ryoji Matsuda , Yosuke Takeuchi
IPC分类号： G11B5/706
CPC分类号： G11B5/66 , G11C11/16 , G11C11/161 , G11C11/1659 , Y10T428/1143
摘要： A magnetic storage device stable in write characteristic is provided. A first nonmagnetic film is provided over a recording layer. A first ferromagnetic film is provided over the first nonmagnetic film and has a first magnetization and a first film thickness. A second nonmagnetic film is provided over the first ferromagnetic film. A second ferromagnetic film is provided over the second nonmagnetic film, is coupled in antiparallel with the first ferromagnetic film, and has a second magnetization and a second film thickness. An antiferromagnetic film is provided over the second ferromagnetic film. The sum of the product of the first magnetization and the first film thickness and the product of the second magnetization and the second film thickness is smaller than the product of the magnetization of the recording layer and the film thickness of the recording layer.
摘要翻译：提供了一种写入特性稳定的磁存储装置。在记录层上提供第一非磁性膜。第一铁磁膜设置在第一非磁性膜上并具有第一磁化强度和第一膜厚度。在第一铁磁膜上设置第二非磁性膜。第二铁磁膜设置在第二非磁性膜上方，与第一铁磁膜反向并联，并具有第二磁化强度和第二膜厚度。在第二铁磁膜上设置反铁磁性膜。第一磁化强度与第一膜厚度的乘积和第二磁化强度与第二膜厚度的乘积的和小于记录层的磁化强度与记录层的膜厚度的乘积。

4. 发明授权

US08264023B2 Semiconductor device and manufacturing method of semiconductor device 失效
标题翻译：半导体器件及半导体器件的制造方法
公开(公告)号：US08264023B2
公开(公告)日：2012-09-11
申请号：US12971783
申请日：2010-12-17
申请人： Yosuke Takeuchi , Masamichi Matsuoka , Ryoji Matsuda , Keisuke Tsukamoto
发明人： Yosuke Takeuchi , Masamichi Matsuoka , Ryoji Matsuda , Keisuke Tsukamoto
IPC分类号： H01L21/02
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , H01L27/228 , H01L43/12
摘要： A semiconductor device includes a semiconductor substrate, a lower electrode, a magnetoresistive element, an upper electrode, and a protective film. The lower electrode is formed over the semiconductor substrate. The magnetoresistive element includes a fixed layer, a tunneling insulating film, and a free layer. The upper electrode is disposed over the free layer. The protective film covers the sides intersecting the main surfaces of the lower electrode, the fixed layer, the tunneling insulating film, the free layer, and the upper electrode. The fixed layer, whose magnetization direction is fixed, is disposed over the lower electrode. The tunneling insulating film is disposed over the fixed layer. The free layer, whose magnetization direction is variable, is disposed over a main surface of the tunneling insulating film. The width of the upper electrode is smaller than that of each of the lower electrode and the fixed layer.
摘要翻译：半导体器件包括半导体衬底，下电极，磁阻元件，上电极和保护膜。下电极形成在半导体衬底上。磁阻元件包括固定层，隧道绝缘膜和自由层。上电极设置在自由层上。保护膜覆盖与下电极，固定层，隧道绝缘膜，自由层和上电极的主表面相交的侧面。磁化方向固定的固定层设置在下电极上。隧道绝缘膜设置在固定层上。其磁化方向可变的自由层设置在隧道绝缘膜的主表面上。上电极的宽度小于下电极和固定层的宽度。

5. 发明申请

US20110057275A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110057275A1
公开(公告)日：2011-03-10
申请号：US12874894
申请日：2010-09-02
申请人： Mikio TSUJIUCHI , Yosuke Takeuchi , Kazuyuki Omori , Kenichi Mori
发明人： Mikio TSUJIUCHI , Yosuke Takeuchi , Kazuyuki Omori , Kenichi Mori
IPC分类号： H01L29/66 , H01L21/04
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , H01L29/7833
摘要： To provide a semiconductor device capable of write operation to a selected magnetoresistive element without causing a malfunction of a non-selected magnetoresistive element and a manufacturing method of this semiconductor device. The semiconductor device includes a magnetic storage element having a magnetization free layer whose magnetization direction is made variable and formed over a lead interconnect and a digit line located below the magnetic storage element, extending in a first direction, and capable of changing the magnetization state of the magnetization free layer by the magnetic field generated. The digit line includes an interconnect body portion and a cladding layer covering therewith the bottom surface and the side surface of the interconnect body portion and opened upward. The cladding layer includes a sidewall portion covering therewith the side surface of the interconnect body portion and a bottom wall portion covering therewith the bottom surface of the interconnect body portion. The thickness of the sidewall portion is made greater than that of the bottom wall portion.
摘要翻译：提供能够对选定的磁阻元件进行写入操作而不引起未选择的磁阻元件的故障的半导体器件和该半导体器件的制造方法。半导体器件包括具有磁化自由层的磁存储元件，该磁化自由层的磁化方向是可变的，并且形成在引线互连和位于磁存储元件下方的位于第一方向上的数字线，并且能够改变磁化状态磁化自由层由磁场产生。数字线包括互连主体部分和覆盖互连体部分的底表面和侧表面并向上敞开的覆层。包覆层包括覆盖互连主体部分的侧表面的侧壁部分和覆盖互连主体部分的底表面的底壁部分。侧壁部分的厚度大于底壁部分的厚度。

6. 发明申请

US20090097867A1 OPTICAL RECEIVER USING MACH-ZEHNDER INTERFEROMETER 有权
标题翻译：光纤接收机采用MACH-ZEHNDER干涉仪
公开(公告)号：US20090097867A1
公开(公告)日：2009-04-16
申请号：US12092031
申请日：2006-05-19
申请人： Mikio Yoneyama , Fumiaki Saitou , Shigeru Ono , Yosuke Takeuchi , Kazushige Yonenaga , Shoichiro Kuwahara , Eiji Yoshida , Yutaka Miyamoto , Hiroto Kawakami
发明人： Mikio Yoneyama , Fumiaki Saitou , Shigeru Ono , Yosuke Takeuchi , Kazushige Yonenaga , Shoichiro Kuwahara , Eiji Yoshida , Yutaka Miyamoto , Hiroto Kawakami
IPC分类号： H04B10/06
CPC分类号： H04L27/2071 , G02F1/0327 , H04B10/677 , H04L27/223
摘要： The present invention relates to an optical receiver, in which the transmittance of a Mach-Zehnder interferometer can be locked at a normal operation point in a simple structure and control.A transmittance detecting circuit and a minute modulation signal detecting circuit are provided in parallel after a balanced optical receiver, and a switch is selectively connectable either a minute modulation signal detecting circuit and a transmittance detecting circuit. In the initial stage of frequency pull-in, the switch is set to connect the transmittance detecting circuit to the synchronous detection circuit. If the transmittance detecting circuit detects that the transmittance of the Mach-Zehnder interferometer at the carrier frequency becomes a desired transmittance, the connection of the switch is switched from the transmittance detecting circuit to the minute modulation signal detecting circuit.
摘要翻译：光接收机技术领域本发明涉及一种光接收机，其中可以以简单的结构和控制将马赫 - 曾德干涉仪的透射率锁定在正常操作点。在平衡光接收器之后并联设置透射检测电路和微调信号检测电路，并且开关可选择性地连接微调制信号检测电路和透射检测电路。在频率拉入的初始阶段，开关被设置为将透射检测电路连接到同步检测电路。如果透射检测电路检测到载波频率下的马赫 - 策德尔干涉仪的透射率变为期望的透射率，则将开关的连接从透射检测电路切换到微调制信号检测电路。

7. 发明授权

US08405172B2 Semiconductor device and semiconductor device assembly 有权
标题翻译：半导体器件和半导体器件组件
公开(公告)号：US08405172B2
公开(公告)日：2013-03-26
申请号：US13075681
申请日：2011-03-30
申请人： Mikio Tsujiuchi , Masayoshi Tarutani , Yosuke Takeuchi
发明人： Mikio Tsujiuchi , Masayoshi Tarutani , Yosuke Takeuchi
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , H01L27/228 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2924/13091 , H01L2924/15311 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device excellent in the magnetic shielding effect of blocking off external magnetic fields is provided. The semiconductor device includes: an interlayer insulating film so formed as to cover a switching element formed over a main surface of a semiconductor substrate; a flat plate-like lead wiring; a coupling wiring coupling the lead wiring and the switching element with each other; and a magnetoresistive element including a magnetization free layer the orientation of magnetization of which is variable and formed over the lead wiring. The semiconductor device has a wiring and another wiring through which the magnetization state of the magnetization free layer can be varied. In a memory cell area where multiple magnetoresistive elements are arranged, a first high permeability film arranged above the magnetoresistive elements is extended from the memory cell area up to a peripheral area that is an area other than the memory cell area.
摘要翻译：提供了一种具有优异的阻挡外部磁场的磁屏蔽效果的半导体器件。半导体器件包括：层间绝缘膜，其形成为覆盖形成在半导体衬底的主表面上的开关元件; 平板状引线; 使引线和开关元件彼此耦合的耦合布线; 以及包括磁化自由层的磁阻元件，其磁化方向可变并形成在引线布线上。半导体器件具有布线和另一布线，通过该布线可以改变磁化自由层的磁化状态。在布置有多个磁阻元件的存储单元区域中，布置在磁阻元件上方的第一高导磁率膜从存储单元区域延伸到作为存储单元区域以外的区域的外围区域。

8. 发明申请

US20070182894A1 Optical compensatory element, manufacturing method thereof, liquid crystal display and liquid crystal projector 审中-公开
标题翻译：光学补偿元件，其制造方法，液晶显示器和液晶投影仪
公开(公告)号：US20070182894A1
公开(公告)日：2007-08-09
申请号：US10590756
申请日：2005-03-07
申请人： Kenichi Nakagawa , Masao Sato , Yosuke Takeuchi , Shintaro Washizu
发明人： Kenichi Nakagawa , Masao Sato , Yosuke Takeuchi , Shintaro Washizu
IPC分类号： G02F1/1335
CPC分类号： G02F1/13363 , G02B5/3016 , G02F2001/133633 , G02F2413/04 , G02F2413/105
摘要： To provide an optical compensatory element that can optically compensate a liquid crystal layer under a condition for displaying black more precisely and prevent light leakage at a wide viewing angle, and to provide a liquid crystal display and a liquid crystal projector using the optical compensatory element, an optical compensatory element includes a support, at least one first optically anisotropic layer derived from at least one of inorganic materials and arranged on or above at least one side of the support, and a second optically anisotropic layer derived from at least one of polymerizable liquid crystal compounds and being arranged on or above at least one side of the support.
摘要翻译：为了提供一种光学补偿元件，其可以在更精确地显示黑色并防止宽视角下的光泄漏的条件下光学地补偿液晶层，并且提供使用光学补偿元件的液晶显示器和液晶投影仪，光学补偿元件包括载体，至少一种衍生自无机材料中的至少一种并且布置在载体的至少一侧上方或上方的第一光学各向异性层和衍生自可聚合液体中的至少一种的第二光学各向异性层晶体化合物并且被布置在载体的至少一侧上或上方。

9. 发明授权

US08541935B2 Color filter and light-emitting display element 有权
标题翻译：彩色滤光片和发光显示元件
公开(公告)号：US08541935B2
公开(公告)日：2013-09-24
申请号：US13378824
申请日：2010-09-06
申请人： Yosuke Takeuchi , Mitsuyoshi Ichihashi , Shinichi Morishima , Tomoki Tasaka
发明人： Yosuke Takeuchi , Mitsuyoshi Ichihashi , Shinichi Morishima , Tomoki Tasaka
IPC分类号： H01L51/50 , G02F1/13 , G02F1/13357
CPC分类号： H01L51/5281 , G02B5/201 , G02B5/3083 , H01L27/322 , H01L27/3246 , H01L51/0085 , H01L51/0087
摘要： A color filter for use in a light-emitting display element which emits at least white light, the color filter including a circularly polarizing layer which includes a polarizing layer, the polarizing layer having an orientation layer and a liquid crystal compound layer, wherein the circularly polarizing layer is formed only in an optical path of the white light.
摘要翻译：一种用于至少发出白光的发光显示元件中使用的滤色器，所述滤色镜包括包括偏振层的圆偏振层，所述偏振层具有取向层和液晶化合物层，其中所述圆形仅在白光的光路中形成偏振层。

10. 发明授权

US08518562B2 Magnetic storage device 有权
标题翻译：磁存储装置
公开(公告)号：US08518562B2
公开(公告)日：2013-08-27
申请号：US12617469
申请日：2009-11-12
申请人： Takashi Takenaga , Takeharu Kuroiwa , Hiroshi Takada , Ryoji Matsuda , Yosuke Takeuchi
发明人： Takashi Takenaga , Takeharu Kuroiwa , Hiroshi Takada , Ryoji Matsuda , Yosuke Takeuchi
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： G11B5/66 , G11C11/16 , G11C11/161 , G11C11/1659 , Y10T428/1143
摘要： A magnetic storage device stable in write characteristic is provided. A first nonmagnetic film is provided over a recording layer. A first ferromagnetic film is provided over the first nonmagnetic film and has a first magnetization and a first film thickness. A second nonmagnetic film is provided over the first ferromagnetic film. A second ferromagnetic film is provided over the second nonmagnetic film, is coupled in antiparallel with the first ferromagnetic film, and has a second magnetization and a second film thickness. An antiferromagnetic film is provided over the second ferromagnetic film. The sum of the product of the first magnetization and the first film thickness and the product of the second magnetization and the second film thickness is smaller than the product of the magnetization of the recording layer and the film thickness of the recording layer.
摘要翻译：提供了一种写入特性稳定的磁存储装置。在记录层上提供第一非磁性膜。第一铁磁膜设置在第一非磁性膜上并具有第一磁化强度和第一膜厚度。在第一铁磁膜上设置第二非磁性膜。第二铁磁膜设置在第二非磁性膜上方，与第一铁磁膜反向并联，并具有第二磁化强度和第二膜厚度。在第二铁磁膜上设置反铁磁性膜。第一磁化强度与第一膜厚度的乘积和第二磁化强度与第二膜厚度的乘积的和小于记录层的磁化强度与记录层的膜厚度的乘积。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式