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1. 发明申请

US20060011872A1 Apparatus for focusing particle beam using radiation pressure 失效
标题翻译：使用辐射压力聚焦粒子束的装置
公开(公告)号：US20060011872A1
公开(公告)日：2006-01-19
申请号：US10976095
申请日：2004-10-27
申请人： Sang Kim , Hyung Park , Sang Kim
发明人： Sang Kim , Hyung Park , Sang Kim
IPC分类号： G01V8/00 , G01N21/86
CPC分类号： H01J27/024
摘要： The present invention relates to an apparatus for focusing particle beams using a radiation pressure capable of obtaining the same flow amount and a narrower particle beam width with respect to the particle size and a higher numeral density. It is possible to form the particle beams by applying the radiation pressure to the particles with respect to the flow condition that cannot form the particle beams with respect to the set particle sizes. There is provided an apparatus for focusing particle beams using a radiation pressure, comprising an orifice part that is provided at a predetermined portion of the flow tube, and a lens having a hole with a predetermined diameter for thereby focusing the particle flow into a particle beam and applying a radiation pressure to the flow particles; and a light source supply part (A) provided at a portion opposite to the discharge outlet of the mixing tube.
摘要翻译：本发明涉及一种使用能够获得相对于粒径和较高数字密度获得相同流量和较窄粒子束宽度的辐射压力来聚焦粒子束的装置。相对于不能相对于设定粒径形成粒子束的流动条件，向粒子施加辐射压力可以形成粒子束。提供了一种用于使用辐射压力聚焦粒子束的装置，包括设置在流量管的预定部分处的孔部分和具有预定直径的孔的透镜，从而将颗粒流聚焦成粒子束并向所述流动颗粒施加辐射压力; 以及设置在与混合管的排出口相对的部分处的光源供应部分（A）。

2. 发明授权

US09515474B2 Power off device for cutting off supply of electric power through sensing of various arc and overload 有权
标题翻译：断电装置可通过感应各种电弧和过载来切断电力供应
公开(公告)号：US09515474B2
公开(公告)日：2016-12-06
申请号：US14402690
申请日：2013-05-24
申请人： Tae Young Chung , Dea Sang Kim
发明人： Tae Young Chung , Dea Sang Kim
IPC分类号： H02H3/08 , H02H1/00 , H02H3/093
CPC分类号： H02H1/0015 , H02H3/093
摘要： Disclosed is a power off device which includes a micro arc detector for turning on a first switching element, based on a voltage induced in a high frequency choke coil by a high frequency pulse current caused by micro arc at a power line, a high current arc detector for outputting a high current arc detection current during turning-on of a second switching element made based on variation of a magnetic field generated at a coil, a delay unit for accumulatively charging the micro arc detection current or the high current arc detection current in a delay capacitor at a predetermined time constant, a power off unit for electrically disconnecting a load from the power line when an operating voltage is applied, and a first switch for connecting the operating voltage to the power off unit in response to the arc detection signal.
摘要翻译：公开了一种断电装置，其包括微电弧检测器，用于基于在高频扼流线圈中感应的电压，通过由电弧上的微弧引起的高频脉冲电流来接通第一开关元件，高电流电弧检测器，用于在基于线圈产生的磁场的变化产生的第二开关元件的导通期间输出高电流电弧检测电流，用于对微弧检测电流或高电流电弧检测电流进行累积充电的延迟单元延迟电容器，预定时间常数的延迟电容器;用于在施加工作电压时将负载与所述电力线电气断开的断电单元，以及响应于所述电弧检测信号将所述工作电压连接到所述断电单元的第一开关。

3. 发明授权

US09286823B2 Method and apparatus for reducing power consumption in electronic equipment using self-emitting type display 有权
标题翻译：使用自发式显示器降低电子设备功耗的方法和装置
公开(公告)号：US09286823B2
公开(公告)日：2016-03-15
申请号：US12720902
申请日：2010-03-10
申请人： Su-Jin Park , Hark-Sang Kim , Sang-Ryul Park
发明人： Su-Jin Park , Hark-Sang Kim , Sang-Ryul Park
IPC分类号： G09G5/10 , G09G3/22 , G09G3/32
CPC分类号： G09G3/22 , G09G3/3208 , G09G2320/0271 , G09G2320/0613 , G09G2320/0626 , G09G2320/106 , G09G2330/021 , G09G2340/10 , G09G2340/12
摘要： A method for reducing power consumption in an electronic equipment using a self-emitting type display is provided. The method includes distinguishing image data to be output, correcting each distinguished image data into an image brightness, synthesizing the corrected image data into one piece of output image data, and controlling a driving power for displaying the synthesized output image data as an image.
摘要翻译：提供了一种使用自发式显示器来降低电子设备的功耗的方法。该方法包括区分要输出的图像数据，将每个识别的图像数据校正为图像亮度，将校正的图像数据合成为一条输出图像数据，以及控制用于显示合成输出图像数据的驱动力作为图像。

4. 发明授权

US08958031B2 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US08958031B2
公开(公告)日：2015-02-17
申请号：US13602425
申请日：2012-09-04
申请人： Wan-Sang Kim , Sanggil Kwak , Wonju Kim
发明人： Wan-Sang Kim , Sanggil Kwak , Wonju Kim
IPC分类号： G02F1/1335
CPC分类号： G02F1/133308 , G02F1/133615 , G02F2001/133342 , G02F2001/133628
摘要： A liquid crystal display includes a light guide plate, a light source, first and second liquid crystal display panels, a main circuit board, and a heat discharging member. The light guide plate includes first and second exiting surfaces, and a side surface extending from the first and second exiting surfaces. The light source faces the side surface and provides light to the side surface. The first and second liquid crystal display panels receive the light exiting from the first and second exiting surfaces, respectively. The main circuit board applies an electrical signal to at least one of the first and second liquid crystal display panels. The light source and the main circuit board are mounted on the heat discharging member, and the heat discharging member discharges heat generated by the light source.
摘要翻译：液晶显示器包括导光板，光源，第一和第二液晶显示面板，主电路板和散热构件。导光板包括第一和第二离开表面以及从第一和第二离开表面延伸的侧表面。光源面向侧面并向侧表面提供光。第一和第二液晶显示面板分别接收从第一和第二离开表面出射的光。主电路板将电信号施加到第一和第二液晶显示面板中的至少一个。光源和主电路板安装在放热构件上，散热构件放出由光源产生的热量。

5. 发明授权

US08931270B2 Hydraulic brake booster 有权
标题翻译：液压制动助力器
公开(公告)号：US08931270B2
公开(公告)日：2015-01-13
申请号：US13106624
申请日：2011-05-12
申请人： Cheol Soo Kim , Kyu Man Lee , Yoo Sang Kim
发明人： Cheol Soo Kim , Kyu Man Lee , Yoo Sang Kim
IPC分类号： B60T13/12 , B60T13/14
CPC分类号： B60T13/143
摘要： Disclosed is a hydraulic brake booster. A relative movement structure of a control plunger and an output shaft is modified in such a manner that the output shaft operates in the control plunger, thereby reducing the overall length of the booster and the manufacturing cost. An inner circumferential surface of a guide of the control plunger does not make contact with an outer circumferential surface of the output shaft, so that the vibration and the impact caused by the contact between the control plunger and the output shaft are not delivered, thereby improving brake pedal feeling. The control plunger includes a guide having a groove, and an inner diameter of the guide is greater than an outer diameter of the output shaft. The control plunger and the output shaft perform relative movement in the overlap state therebetween, thereby reducing the overall length of the booster and the manufacturing cost.
摘要翻译：公开了一种液压制动助力器。控制柱塞和输出轴的相对运动结构被改变为使得输出轴在控制柱塞中操作，从而减小升压器的总长度和制造成本。控制柱塞的引导件的内周面不与输出轴的外周面接触，使得由控制柱塞与输出轴之间的接触引起的振动和冲击不被输送，从而改善刹车踏板感觉控制柱塞包括具有凹槽的引导件，并且引导件的内径大于输出轴的外径。控制柱塞和输出轴在它们之间的重叠状态下执行相对运动，从而减小助推器的总长度和制造成本。

6. 发明授权

US08912536B2 Transistors, methods of manufacturing the same and electronic devices including transistors 有权
标题翻译：晶体管，其制造方法以及包括晶体管的电子器件
公开(公告)号：US08912536B2
公开(公告)日：2014-12-16
申请号：US13156906
申请日：2011-06-09
申请人： Wan-joo Maeng , Myung-kwan Ryu , Tae-sang Kim , Joon-seok Park
发明人： Wan-joo Maeng , Myung-kwan Ryu , Tae-sang Kim , Joon-seok Park
IPC分类号： H01L29/10 , H01L29/786
CPC分类号： H01L29/7869
摘要： An oxide transistor includes: a channel layer formed of an oxide semiconductor; a source electrode contacting a first end portion of the channel layer; a drain electrode contacting a second end portion of the channel layer; a gate corresponding to the channel layer; and a gate insulating layer disposed between the channel layer and the gate. The oxide semiconductor includes hafnium-indium-zinc-oxide (HfInZnO). An electrical conductivity of a back channel region of the channel layer is lower than an electrical conductivity of a front channel region of the channel layer.
摘要翻译：氧化物晶体管包括：由氧化物半导体形成的沟道层; 与所述沟道层的第一端部接触的源电极; 漏极，与所述沟道层的第二端部接触; 对应于沟道层的栅极; 以及设置在沟道层和栅极之间的栅极绝缘层。氧化物半导体包括铪 - 铟 - 锌 - 氧化物（HfInZnO）。沟道层的背沟道区域的导电率低于沟道层的前沟道区域的导电率。

7. 发明授权

US08859207B2 Pharmaceutical compositions which inhibit FKBP52-mediated regulation of androgen receptor function and methods of using same 有权
标题翻译：抑制FKBP52介导的雄激素受体功能调节的药物组合物及其使用方法
公开(公告)号：US08859207B2
公开(公告)日：2014-10-14
申请号：US13395976
申请日：2010-09-14
申请人： Leonard M. Neckers , Marc B. Cox , Jane B. Neckers , Yeong Sang Kim , Aki Iwai , Yangmin Ning , Johanny Tonos de Leon , Heather Balsiger
发明人： Leonard M. Neckers , Marc B. Cox , Jane B. Neckers , Yeong Sang Kim , Aki Iwai , Yangmin Ning , Johanny Tonos de Leon , Heather Balsiger
IPC分类号： C12N15/00 , A61K31/192 , A61K31/167 , A61K45/06 , A61K31/4741 , A61K31/165 , A61K31/40 , A61K31/4355
CPC分类号： A61K31/4741 , A61K31/165 , A61K31/167 , A61K31/192 , A61K31/195 , A61K31/40 , A61K31/4355 , A61K45/06 , C07C233/66 , C07C235/84 , C07D491/048 , A61K2300/00
摘要： Pharmaceutical compositions that bind to a predicted FK506 Binding Protein 52 (FKBP52) interaction surface on the androgen receptor hormone binding domain, otherwise known as FKBP52 Targeting Agents (FTAs) are provided. These compositions of the present invention are found to specifically recognize the FKBP52 regulatory surface on the androgen receptor and inhibit FKBP52 from functionally interacting with the androgen receptor. Compositions comprising the pharmaceutical composition, as well as methods of use, treatment and screening are also provided.
摘要翻译：提供了与雄激素受体激素结合结构域（也称为FKBP52靶向剂（FTA））上预测的FK506结合蛋白52（FKBP52）相互作用表面结合的药物组合物。发现本发明的这些组合物特异性地识别雄激素受体上的FKBP52调节表面并抑制FKBP52与雄激素受体的功能相互作用。还提供了包含药物组合物的组合物，以及使用方法，治疗和筛选方法。

8. 发明授权

US08759917B2 Thin-film transistor having etch stop multi-layer and method of manufacturing the same 有权
标题翻译：具有蚀刻停止多层的薄膜晶体管及其制造方法
公开(公告)号：US08759917B2
公开(公告)日：2014-06-24
申请号：US12929066
申请日：2010-12-28
申请人： Joon Seok Park , Tae Sang Kim , Yun-Hyuk Choi
发明人： Joon Seok Park , Tae Sang Kim , Yun-Hyuk Choi
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78606
摘要： A thin-film transistor (TFT) may include a channel layer, an etch stop multi-layer, a source, a drain, a gate, and a gate insulation layer. The etch stop multi-layer may include a first etch stop layer and a second etch stop layer. The second etch stop layer may prevent or reduce an etchant from contacting the channel layer.
摘要翻译：薄膜晶体管（TFT）可以包括沟道层，蚀刻停止多层，源极，漏极，栅极和栅极绝缘层。蚀刻停止多层可以包括第一蚀刻停止层和第二蚀刻停止层。第二蚀刻停止层可以防止或减少蚀刻剂接触通道层。

9. 发明授权

US08732897B2 Autonomous cleaning device 有权
标题翻译：自动清洗装置
公开(公告)号：US08732897B2
公开(公告)日：2014-05-27
申请号：US13596556
申请日：2012-08-28
申请人： Hyun Soo Jung , Seung Il Han , Dong Won Kim , Bo Sang Kim , Jun Hwa Lee
发明人： Hyun Soo Jung , Seung Il Han , Dong Won Kim , Bo Sang Kim , Jun Hwa Lee
IPC分类号： A47L5/00
CPC分类号： A47L9/0411 , A47L9/0466 , A47L9/0626 , A47L9/0633 , A47L11/4044 , A47L11/4052 , A47L2201/00
摘要： A blade assembly of an autonomous cleaning device. The blade assembly includes a blade having a first part fixed to the main body and a second part extended from the first part toward a floor and a support member having at least a portion disposed adjacent to the second part of the blade to restrict movement of the second part of the blade to within a predetermined range.
摘要翻译：自动清洁装置的叶片组件。叶片组件包括具有固定到主体的第一部分和从第一部分向地板延伸的第二部分的叶片和具有至少一部分设置成邻近叶片的第二部分的部分的支撑部件，叶片的第二部分在预定范围内。

10. 发明申请

US20140130859A1 SOLAR CELL SUBSTRATE AND SOLAR CELL USING SAME 审中-公开
标题翻译：太阳能电池基板和使用相同的太阳能电池
公开(公告)号：US20140130859A1
公开(公告)日：2014-05-15
申请号：US14126115
申请日：2012-06-08
申请人： Kyoung-Bo Kim , Young-Jun Park , Je-Hoon Baek , Jong-Sang Kim
发明人： Kyoung-Bo Kim , Young-Jun Park , Je-Hoon Baek , Jong-Sang Kim
IPC分类号： H01L31/0224
CPC分类号： H01L31/022425 , H01L31/03928 , H01L31/0749 , Y02E10/541
摘要： The present invention relates to a solar cell substrate, and to a solar cell using same. The solar cell according to one embodiment of the present invention comprises: a lower substrate; and a lower electrode formed on the lower substrate. The lower electrode is formed of a Mo—X—Na three-component-system compound metal layer. Here, X may be one of Nb, Ni, Si, Ti, W, and Cr. The solar cell according to another embodiment of the present invention may comprise: a solar cell substrate including a lower substrate and a Mo—X—Na three-component-system compound metal layer that is a lower electrode formed on the lower substrate; a light-absorption layer formed on the solar cell substrate; a buffer layer formed on the light-absorption layer; a transparent window formed on the buffer layer; and an upper electrode formed on the transparent window.
摘要翻译：太阳能电池基板及其制造方法技术领域本发明涉及太阳能电池基板，太阳能电池。根据本发明的一个实施例的太阳能电池包括：下基板; 和形成在下基板上的下电极。下电极由Mo-X-Na三组分体系复合金属层形成。这里，X可以是Nb，Ni，Si，Ti，W和Cr中的一种。根据本发明的另一实施例的太阳能电池可以包括：太阳能电池基板，其包括下基板和Mo-X-Na三组分系统复合金属层，其是形成在下基板上的下电极; 形成在太阳能电池基板上的光吸收层; 形成在所述光吸收层上的缓冲层; 形成在缓冲层上的透明窗; 和形成在透明窗上的上电极。

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