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1. 发明授权

US07548466B2 Flash memory device and voltage generating circuit for the same 有权
标题翻译：闪存器件和电压发生电路相同
公开(公告)号：US07548466B2
公开(公告)日：2009-06-16
申请号：US11521479
申请日：2006-09-15
申请人： Sang-Kug Park , Dae-Han Kim
发明人： Sang-Kug Park , Dae-Han Kim
IPC分类号： G11C5/14
CPC分类号： G11C8/08 , G11C11/5621 , G11C16/30
摘要： A flash memory device includes a memory cell array including a plurality of memory cells. The flash memory device also includes a voltage generating circuit which generates a plurality of constant voltages to be applied to the memory cell array, the voltage generating circuit including a plurality of voltage regulators which generate at least two constant voltages, each having a constant voltage difference.
摘要翻译：闪存器件包括包括多个存储单元的存储单元阵列。闪速存储装置还包括产生要施加到存储单元阵列的多个恒定电压的电压产生电路，该电压产生电路包括产生至少两个恒定电压的多个电压调节器，每个恒定电压具有恒定的电压差。

2. 发明授权

US07724579B2 Semiconductor memory devices and method for preventing mismatch of reference signals in data sending 有权
标题翻译：半导体存储器件和用于防止参考信号在数据发送中失配的方法
公开(公告)号：US07724579B2
公开(公告)日：2010-05-25
申请号：US11892461
申请日：2007-08-23
申请人： Sang-Kug Park , Dae-Han Kim
发明人： Sang-Kug Park , Dae-Han Kim
IPC分类号： G11C11/34
CPC分类号： G11C16/28 , G11C7/08 , G11C7/14
摘要： Semiconductor memory devices and a method thereof are provided. An example semiconductor memory device may include a control signal generation unit configured to generate a plurality of control signals in response to a bias current, a reference current generation unit configured to generate a reference current in response to the plurality of control signals and a sense amplifier configured to sense and amplify data stored in a given memory cell based on the reference current and a current on a bit line connected to the memory cell. Another example semiconductor memory device may include a memory bank including a plurality of memory cells and a sense amplifier bank including a plurality of sense amplifier units sharing a common line, each of the sense amplifier units including a current source configured to form a current path between the common line and a first voltage supply in response to an enable signal and a gating signal and a sense amplifier configured to sense and amplify data stored in a corresponding memory cell among the plurality of memory cells based on a signal on a bit line connected with the corresponding memory cell and a signal on the common line.
摘要翻译：提供半导体存储器件及其方法。示例性半导体存储器件可以包括：控制信号生成单元，被配置为响应于偏置电流产生多个控制信号;参考电流产生单元，被配置为响应于所述多个控制信号产生参考电流;以及读出放大器被配置为基于所述参考电流和连接到所述存储器单元的位线上的电流来感测和放大存储在给定存储器单元中的数据。另一示例性半导体存储器件可以包括存储器组，其包括多个存储器单元和包括共享公共线的多个读出放大器单元的读出放大器组，每个读出放大器单元包括被配置为形成电流源所述公共线路和第一电压电源响应于使能信号和门控信号，以及读出放大器，被配置为基于与所述多个存储器单元中的位线相关联的信号来感测和放大存储在所述多个存储器单元中的相应存储器单元中的数据相应的存储单元和公共线上的信号。

3. 发明授权

US07881129B2 High voltage regulator for non-volatile memory device 有权
标题翻译：用于非易失性存储器件的高压稳压器
公开(公告)号：US07881129B2
公开(公告)日：2011-02-01
申请号：US12010247
申请日：2008-01-23
申请人： Sang-kug Park , Dae-han Kim
发明人： Sang-kug Park , Dae-han Kim
IPC分类号： G11C5/14
CPC分类号： G11C16/12 , G11C5/145 , G11C11/5628 , G11C16/30 , G11C16/3454
摘要： A high voltage regulator may include a first regulating unit, a second regulating unit, and an output node. The first regulating unit regulates the program voltage in a voltage-level-up interval of a program voltage of a memory cell. The second regulating unit regulates the program voltage in a voltage-level-down interval of the program voltage. The output node outputs the regulated program voltage.
摘要翻译：高压调节器可以包括第一调节单元，第二调节单元和输出节点。第一调节单元在存储器单元的编程电压的电压升高间隔中调节编程电压。第二调节单元在编程电压的电压降低间隔中调节编程电压。输出节点输出调节编程电压。

4. 发明申请

US20080151635A1 Semiconductor memory devices and a method thereof 有权
标题翻译：半导体存储器件及其方法
公开(公告)号：US20080151635A1
公开(公告)日：2008-06-26
申请号：US11892461
申请日：2007-08-23
申请人： Sang-Kug Park , Dae-Han Kim
发明人： Sang-Kug Park , Dae-Han Kim
IPC分类号： G11C16/06
CPC分类号： G11C16/28 , G11C7/08 , G11C7/14
摘要： Semiconductor memory devices and a method thereof are provided. An example semiconductor memory device may include a control signal generation unit configured to generate a plurality of control signals in response to a bias current, a reference current generation unit configured to generate a reference current in response to the plurality of control signals and a sense amplifier configured to sense and amplify data stored in a given memory cell based on the reference current and a current on a bit line connected to the memory cell. Another example semiconductor memory device may include a memory bank including a plurality of memory cells and a sense amplifier bank including a plurality of sense amplifier units sharing a common line, each of the sense amplifier units including a current source configured to form a current path between the common line and a first voltage supply in response to an enable signal and a gating signal and a sense amplifier configured to sense and amplify data stored in a corresponding memory cell among the plurality of memory cells based on a signal on a bit line connected with the corresponding memory cell and a signal on the common line.
摘要翻译：提供半导体存储器件及其方法。示例性半导体存储器件可以包括：控制信号生成单元，被配置为响应于偏置电流产生多个控制信号;参考电流产生单元，被配置为响应于所述多个控制信号产生参考电流;以及读出放大器被配置为基于所述参考电流和连接到所述存储器单元的位线上的电流来感测和放大存储在给定存储器单元中的数据。另一示例性半导体存储器件可以包括存储器组，其包括多个存储器单元和包括共享公共线的多个读出放大器单元的读出放大器组，每个读出放大器单元包括被配置为形成电流源所述公共线路和第一电压电源响应于使能信号和门控信号，以及读出放大器，被配置为基于与所述多个存储器单元中的位线相关联的信号来感测和放大存储在所述多个存储器单元中的相应存储器单元中的数据相应的存储单元和公共线上的信号。

5. 发明申请

US20080150499A1 VOLTAGE REGULATOR FOR USE IN NONVOLATILE SEMICONDUCTOR MEMORY 有权
标题翻译：用于非线性半导体存储器的电压调节器
公开(公告)号：US20080150499A1
公开(公告)日：2008-06-26
申请号：US11844508
申请日：2007-08-24
申请人： Sang-Kug PARK , Dae-Han KIM
发明人： Sang-Kug PARK , Dae-Han KIM
IPC分类号： G05F1/44 , G05F1/00
CPC分类号： G11C16/30 , G11C5/147
摘要： The invention relates to a voltage regulator for operation of a semiconductor memory device. In embodiments, the voltage regulator includes a standby regulator unit and an active regulating unit. Embodiments of the invention decouple the operation of the standby regulating unit and the active regulating unit of a voltage regulator so that both can operate simultaneously, for example during a read operation. In embodiments of the invention, the standby regulating unit includes a short pulse generator and a feedback loop to disable the standby regulating unit for a predetermined amount of time.
摘要翻译：本发明涉及用于半导体存储器件操作的电压调节器。在实施例中，电压调节器包括备用调节器单元和主动调节单元。本发明的实施例解除了电压调节器的待机调节单元和有源调节单元的操作，使得两者可以同时操作，例如在读取操作期间。在本发明的实施例中，待机调节单元包括短脉冲发生器和反馈回路，以使待机调节单元停止预定的时间量。

6. 发明授权

US07791320B2 Voltage regulator for use in nonvolatile semiconductor memory 有权
标题翻译：用于非易失性半导体存储器的稳压器
公开(公告)号：US07791320B2
公开(公告)日：2010-09-07
申请号：US11844508
申请日：2007-08-24
申请人： Sang-kug Park , Dae-Han Kim
发明人： Sang-kug Park , Dae-Han Kim
IPC分类号： G05F1/59
CPC分类号： G11C16/30 , G11C5/147
摘要： The invention relates to a voltage regulator for operation of a semiconductor memory device. In embodiments, the voltage regulator includes a standby regulator unit and an active regulating unit. Embodiments of the invention decouple the operation of the standby regulating unit and the active regulating unit of a voltage regulator so that both can operate simultaneously, for example during a read operation. In embodiments of the invention, the standby regulating unit includes a short pulse generator and a feedback loop to disable the standby regulating unit for a predetermined amount of time.
摘要翻译：本发明涉及用于半导体存储器件操作的电压调节器。在实施例中，电压调节器包括备用调节器单元和主动调节单元。本发明的实施例解除了电压调节器的待机调节单元和有源调节单元的操作，使得两者可以同时操作，例如在读取操作期间。在本发明的实施例中，待机调节单元包括短脉冲发生器和反馈回路，以使待机调节单元停止预定的时间量。

7. 发明申请

US20080180997A1 High voltage regulator for non-volatile memory device 有权
标题翻译：用于非易失性存储器件的高压稳压器
公开(公告)号：US20080180997A1
公开(公告)日：2008-07-31
申请号：US12010247
申请日：2008-01-23
申请人： Sang-kug Park , Dae-han Kim
发明人： Sang-kug Park , Dae-han Kim
IPC分类号： G11C16/06 , G11C7/00 , G11C5/14
CPC分类号： G11C16/12 , G11C5/145 , G11C11/5628 , G11C16/30 , G11C16/3454
摘要： A high voltage regulator may include a first regulating unit, a second regulating unit, and an output node. The first regulating unit regulates the program voltage in a voltage-level-up interval of a program voltage of a memory cell. The second regulating unit regulates the program voltage in a voltage-level-down interval of the program voltage. The output node outputs the regulated program voltage.
摘要翻译：高压调节器可以包括第一调节单元，第二调节单元和输出节点。第一调节单元在存储器单元的编程电压的电压升高间隔中调节编程电压。第二调节单元在编程电压的电压降低间隔中调节编程电压。输出节点输出调节编程电压。

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