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1. 发明授权

US07881129B2 High voltage regulator for non-volatile memory device 有权
标题翻译：用于非易失性存储器件的高压稳压器
公开(公告)号：US07881129B2
公开(公告)日：2011-02-01
申请号：US12010247
申请日：2008-01-23
申请人： Sang-kug Park , Dae-han Kim
发明人： Sang-kug Park , Dae-han Kim
IPC分类号： G11C5/14
CPC分类号： G11C16/12 , G11C5/145 , G11C11/5628 , G11C16/30 , G11C16/3454
摘要： A high voltage regulator may include a first regulating unit, a second regulating unit, and an output node. The first regulating unit regulates the program voltage in a voltage-level-up interval of a program voltage of a memory cell. The second regulating unit regulates the program voltage in a voltage-level-down interval of the program voltage. The output node outputs the regulated program voltage.
摘要翻译：高压调节器可以包括第一调节单元，第二调节单元和输出节点。第一调节单元在存储器单元的编程电压的电压升高间隔中调节编程电压。第二调节单元在编程电压的电压降低间隔中调节编程电压。输出节点输出调节编程电压。

2. 发明授权

US07791320B2 Voltage regulator for use in nonvolatile semiconductor memory 有权
标题翻译：用于非易失性半导体存储器的稳压器
公开(公告)号：US07791320B2
公开(公告)日：2010-09-07
申请号：US11844508
申请日：2007-08-24
申请人： Sang-kug Park , Dae-Han Kim
发明人： Sang-kug Park , Dae-Han Kim
IPC分类号： G05F1/59
CPC分类号： G11C16/30 , G11C5/147
摘要： The invention relates to a voltage regulator for operation of a semiconductor memory device. In embodiments, the voltage regulator includes a standby regulator unit and an active regulating unit. Embodiments of the invention decouple the operation of the standby regulating unit and the active regulating unit of a voltage regulator so that both can operate simultaneously, for example during a read operation. In embodiments of the invention, the standby regulating unit includes a short pulse generator and a feedback loop to disable the standby regulating unit for a predetermined amount of time.
摘要翻译：本发明涉及用于半导体存储器件操作的电压调节器。在实施例中，电压调节器包括备用调节器单元和主动调节单元。本发明的实施例解除了电压调节器的待机调节单元和有源调节单元的操作，使得两者可以同时操作，例如在读取操作期间。在本发明的实施例中，待机调节单元包括短脉冲发生器和反馈回路，以使待机调节单元停止预定的时间量。

3. 发明申请

US20080180997A1 High voltage regulator for non-volatile memory device 有权
标题翻译：用于非易失性存储器件的高压稳压器
公开(公告)号：US20080180997A1
公开(公告)日：2008-07-31
申请号：US12010247
申请日：2008-01-23
申请人： Sang-kug Park , Dae-han Kim
发明人： Sang-kug Park , Dae-han Kim
IPC分类号： G11C16/06 , G11C7/00 , G11C5/14
CPC分类号： G11C16/12 , G11C5/145 , G11C11/5628 , G11C16/30 , G11C16/3454
摘要： A high voltage regulator may include a first regulating unit, a second regulating unit, and an output node. The first regulating unit regulates the program voltage in a voltage-level-up interval of a program voltage of a memory cell. The second regulating unit regulates the program voltage in a voltage-level-down interval of the program voltage. The output node outputs the regulated program voltage.
摘要翻译：高压调节器可以包括第一调节单元，第二调节单元和输出节点。第一调节单元在存储器单元的编程电压的电压升高间隔中调节编程电压。第二调节单元在编程电压的电压降低间隔中调节编程电压。输出节点输出调节编程电压。

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