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1. 发明授权

US08854033B2 Current sensor, inverter circuit, and semiconductor device having the same 有权
标题翻译：电流传感器，逆变器电路和具有相同功能的半导体器件
公开(公告)号：US08854033B2
公开(公告)日：2014-10-07
申请号：US13150764
申请日：2011-06-01
申请人： Satoshi Shiraki , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
发明人： Satoshi Shiraki , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
IPC分类号： G01R1/20
CPC分类号： H01L27/1203 , G01R19/0092 , H01L21/76283 , H01L23/585 , H01L29/0696 , H01L29/405 , H01L29/7394 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.
摘要翻译：具有横向半导体元件的半导体器件包括半导体衬底，衬底上的第一电极，衬底上的第二电极和位于衬底中的隔离结构，以将衬底分成第一岛和与第一岛电绝缘的第二岛第一个岛屿。横向半导体元件包括位于第一岛中的主单元和位于第二岛中的感测单元。主电池使得第一电流在第一电极和第二电极之间流动，使得第一电流沿着基板的表面在横向方向上流动。通过检测流过感测单元的第二电流来检测第一电流。

2. 发明申请

US20140048911A1 LATERAL SEMICONDUCTOR DEVICE 有权
标题翻译：横向半导体器件
公开(公告)号：US20140048911A1
公开(公告)日：2014-02-20
申请号：US14113419
申请日：2012-05-10
申请人： Takashi Suzuki , Norihito Tokura , Satoshi Shiraki , Shigeki Takahashi , Youichi Ashida , Akira Yamada
发明人： Takashi Suzuki , Norihito Tokura , Satoshi Shiraki , Shigeki Takahashi , Youichi Ashida , Akira Yamada
IPC分类号： H01L29/06
CPC分类号： H01L29/063 , H01L29/0692 , H01L29/402 , H01L29/404 , H01L29/405 , H01L29/861
摘要： A lateral semiconductor device includes a semiconductor layer, an insulating layer, and a resistive field plate. The semiconductor layer includes a first semiconductor region and a second semiconductor region at a surface portion, and the second semiconductor region makes a circuit around the first semiconductor region. The insulating layer is formed on a surface of the semiconductor layer and is disposed between the first and second semiconductor regions. The resistive field plate is formed on a surface of the insulating layer. Between the first and second semiconductor regions, a first section and a second section are adjacent to each other along a circumferential direction around the first semiconductor region. The resistive field plate includes first and second resistive field plate sections respectively formed in the first and second sections, and the first and second resistive field plate sections are separated from each other.
摘要翻译：横向半导体器件包括半导体层，绝缘层和电阻场板。半导体层包括在表面部分处的第一半导体区域和第二半导体区域，并且第二半导体区域在第一半导体区域周围形成电路。绝缘层形成在半导体层的表面上并且设置在第一和第二半导体区之间。电阻场板形成在绝缘层的表面上。在第一和第二半导体区域之间，第一部分和第二部分沿着围绕第一半导体区域的圆周方向彼此相邻。电阻场板包括分别形成在第一和第二部分中的第一和第二电阻场板部分，并且第一和第二电阻场板部分彼此分离。

3. 发明授权

US08476673B2 Diode 有权
标题翻译：二极管
公开(公告)号：US08476673B2
公开(公告)日：2013-07-02
申请号：US13296832
申请日：2011-11-15
申请人： Norihito Tokura , Satoshi Shiraki , Shigeki Takahashi , Shinya Sakurai , Takashi Suzuki
发明人： Norihito Tokura , Satoshi Shiraki , Shigeki Takahashi , Shinya Sakurai , Takashi Suzuki
IPC分类号： H01L29/861 , H01L29/747 , H01L31/107
CPC分类号： H01L21/76283 , H01L27/0814 , H01L27/1203 , H01L29/0619 , H01L29/0649 , H01L29/08 , H01L29/405 , H01L29/8611
摘要： A diode has a semiconductor layer and cathode and anode electrodes on a surface of the semiconductor layer. The semiconductor layer has cathode and anode regions respectively contacting the cathode and anode electrodes. The anode region has a first diffusion region having high surface concentration, a second diffusion region having intermediate surface concentration, and a third diffusion region having low surface concentration. The first diffusion region is covered with the second and third diffusion regions. The second diffusion region has a first side surface facing the cathode region, a second side surface opposite to the cathode region, and a bottom surface extending between the first and second side surfaces. The third diffusion region covers at least one of the first corner part connecting the first side surface with the bottom surface and the second corner part connecting the second side surface with the bottom surface.
摘要翻译：二极管在半导体层的表面上具有半导体层和阴极和阳极电极。半导体层具有分别与阴极和阳极电极接触的阴极和阳极区域。阳极区域具有表面浓度高的第一扩散区域，具有中间表面浓度的第二扩散区域和具有低表面浓度的第三扩散区域。第一扩散区被第二和第三扩散区覆盖。第二扩散区域具有面对阴极区域的第一侧表面，与阴极区域相对的第二侧表面和在第一和第二侧表面之间延伸的底表面。第三扩散区域覆盖连接第一侧表面与底表面的第一角部和将第二侧表面与底表面连接的第二角部中的至少一个。

4. 发明申请

US20110298446A1 CURRENT SENSOR, INVERTER CIRCUIT, AND SEMICONDUCTOR DEVICE HAVING THE SAME 有权
标题翻译：电流传感器，逆变器电路和具有该电流传感器的半导体器件
公开(公告)号：US20110298446A1
公开(公告)日：2011-12-08
申请号：US13150764
申请日：2011-06-01
申请人： Satoshi SHIRAKI , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
发明人： Satoshi SHIRAKI , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
IPC分类号： G01R1/20 , H01L29/739
CPC分类号： H01L27/1203 , G01R19/0092 , H01L21/76283 , H01L23/585 , H01L29/0696 , H01L29/405 , H01L29/7394 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.
摘要翻译：具有横向半导体元件的半导体器件包括半导体衬底，衬底上的第一电极，衬底上的第二电极和位于衬底中的隔离结构，以将衬底分成第一岛和与第一岛电绝缘的第二岛第一个岛屿。横向半导体元件包括位于第一岛中的主单元和位于第二岛中的感测单元。主电池使得第一电流在第一电极和第二电极之间流动，使得第一电流沿着基板的表面在横向方向上流动。通过检测流过感测单元的第二电流来检测第一电流。

5. 发明授权

US07639060B2 Level shift circuit 有权
标题翻译：电平移位电路
公开(公告)号：US07639060B2
公开(公告)日：2009-12-29
申请号：US12076521
申请日：2008-03-19
申请人： Satoshi Shiraki , Hiroyuki Ban , Junichi Nagata
发明人： Satoshi Shiraki , Hiroyuki Ban , Junichi Nagata
IPC分类号： H03L5/00
CPC分类号： H03K19/018571 , H01L27/0251 , H03K5/003 , H03K19/00361
摘要： A level shift circuit includes a first capacitor circuit including capacitors connected in series between a ground and a predetermined potential, a first trigger circuit coupled to the predetermined potential side of the first capacitor circuit, an input terminal coupled to the ground side of the first capacitor circuit, a second capacitor circuit including capacitors connected in series between the ground and the predetermined potential, a second trigger circuit coupled to the predetermined potential side of the second capacitor circuit, an inverter coupled between the input terminal and the ground potential side of the second capacitor circuit, and a SR latch circuit having a first input coupled to an output of the first trigger circuit and a second input coupled to an output of the second trigger circuit.
摘要翻译：电平移位电路包括：第一电容器电路，包括串联连接在接地和预定电位之间的电容器;耦合到第一电容器电路的预定电位侧的第一触发电路;耦合到第一电容器的接地侧的输入端子电路，包括串联连接在接地和预定电位之间的电容器的第二电容器电路，耦合到第二电容器电路的预定电位侧的第二触发电路，耦合在第二电容器的输入端子和地电位侧之间的反相器电容器电路和SR锁存电路，其具有耦合到第一触发电路的输出的第一输入和耦合到第二触发电路的输出的第二输入。

6. 发明申请

US20080007920A1 Loading driving device 有权
标题翻译：装载驱动装置
公开(公告)号：US20080007920A1
公开(公告)日：2008-01-10
申请号：US11806467
申请日：2007-05-31
申请人： Satoshi Shiraki , Akira Yamada , Hiroyuki Ban
发明人： Satoshi Shiraki , Akira Yamada , Hiroyuki Ban
IPC分类号： H02M7/537 , H05K7/20
CPC分类号： H05K7/1432 , H01L24/73 , H01L2224/32145 , H01L2224/32245 , H01L2224/33181 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2924/01046 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H02M7/003 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A load driving device includes: an output power device for driving a load; a driving IC for controlling the output power device, wherein the driving IC is electrically coupled with the output power device through a wire or a connection member; and a first electrode substrate. The output power device and the driving IC are mounted on the first electrode substrate. In this case, the output power device is controlled with high speed, and a mounting area of the output power device and the driving IC is reduced.
摘要翻译：负载驱动装置包括：用于驱动负载的输出功率装置; 用于控制输出功率器件的驱动IC，其中驱动IC通过导线或连接构件与输出功率器件电耦合; 和第一电极基板。输出功率器件和驱动IC安装在第一电极基板上。在这种情况下，输出功率器件被高速控制，并且输出功率器件和驱动IC的安装面积减小。

7. 发明授权

US07109558B2 Power MOS transistor having capability for setting substrate potential independently of source potential 有权
公开(公告)号：US07109558B2
公开(公告)日：2006-09-19
申请号：US10160098
申请日：2002-06-04
申请人： Takashi Nakano , Satoshi Shiraki , Yutaka Fukuda , Nobumasa Ueda , Shoji Miura
发明人： Takashi Nakano , Satoshi Shiraki , Yutaka Fukuda , Nobumasa Ueda , Shoji Miura
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7811 , H01L23/4824 , H01L29/0696 , H01L29/0847 , H01L29/1087 , H01L29/1095 , H01L29/7802 , H01L29/7816 , H01L29/7835 , Y10S257/901
摘要： A power MOS transistor formed of an array of source cells and drain cells on an IC chip substrate has a plurality of substrate contact cells, each formed external to the source cells, having respective substrate potential-setting electrodes to which an externally supplied substrate bias voltage can be applied, enabling the substrate potential to be set independently of the source potential of the transistor. It thereby becomes possible to modify the threshold voltage of the transistor or maintain a constant potential difference between the substrate potential and that of a gate input signal. Since the requirement for a substrate contact region within each source cell is eliminated, and the number of substrate contact cells can be fewer than that of the source cells, the chip area occupied by the transistor can be reduced by comparison with a prior art configuration providing such a substrate potential control capability.

8. 发明授权

US09240445B2 Lateral semiconductor device 有权
标题翻译：侧面半导体器件
公开(公告)号：US09240445B2
公开(公告)日：2016-01-19
申请号：US14113419
申请日：2012-05-10
申请人： Takashi Suzuki , Norihito Tokura , Satoshi Shiraki , Shigeki Takahashi , Youichi Ashida , Akira Yamada
发明人： Takashi Suzuki , Norihito Tokura , Satoshi Shiraki , Shigeki Takahashi , Youichi Ashida , Akira Yamada
IPC分类号： H01L23/62 , H01L29/06 , H01L29/40 , H01L29/861
CPC分类号： H01L29/063 , H01L29/0692 , H01L29/402 , H01L29/404 , H01L29/405 , H01L29/861
摘要： A lateral semiconductor device includes a semiconductor layer, an insulating layer, and a resistive field plate. The semiconductor layer includes a first semiconductor region and a second semiconductor region at a surface portion, and the second semiconductor region makes a circuit around the first semiconductor region. The insulating layer is formed on a surface of the semiconductor layer and is disposed between the first and second semiconductor regions. The resistive field plate is formed on a surface of the insulating layer. Between the first and second semiconductor regions, a first section and a second section are adjacent to each other along a circumferential direction around the first semiconductor region. The resistive field plate includes first and second resistive field plate sections respectively formed in the first and second sections, and the first and second resistive field plate sections are separated from each other.
摘要翻译：横向半导体器件包括半导体层，绝缘层和电阻场板。半导体层包括在表面部分处的第一半导体区域和第二半导体区域，并且第二半导体区域在第一半导体区域周围形成电路。绝缘层形成在半导体层的表面上并且设置在第一和第二半导体区之间。电阻场板形成在绝缘层的表面上。在第一和第二半导体区域之间，第一部分和第二部分沿着围绕第一半导体区域的圆周方向彼此相邻。电阻场板包括分别形成在第一和第二部分中的第一和第二电阻场板部分，并且第一和第二电阻场板部分彼此分离。

9. 发明申请

US20090152668A1 Semiconductor apparatus 有权
标题翻译：半导体装置
公开(公告)号：US20090152668A1
公开(公告)日：2009-06-18
申请号：US12314518
申请日：2008-12-11
申请人： Hiroki Sone , Akira Yamada , Satoshi Shiraki , Nozomu Akagi
发明人： Hiroki Sone , Akira Yamada , Satoshi Shiraki , Nozomu Akagi
IPC分类号： H01L25/16 , H01L23/495
CPC分类号： H01L27/1203 , H01L23/49589 , H01L23/585 , H01L24/48 , H01L27/092 , H01L2224/48095 , H01L2224/48247 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor apparatus is disclosed. The semiconductor apparatus includes an SOI substrate including an active layer, a buried insulation film and a support substrate; a low potential reference circuit part located in the active layer and operable at a first reference potential; a high potential reference circuit part located in the active layer and operable at a second reference potential; a level-shifting element forming part located in the active layer and for providing a level-shift between the first and second reference potentials; and an insulation member insulating first and second portions of the support substrate from each other, wherein locations of the first and second portions respectively correspond to the low and high potential reference circuit parts.
摘要翻译：公开了一种半导体装置。半导体装置包括：SOI基板，包括有源层，掩埋绝缘膜和支撑基板; 位于所述有源层中并且可在第一参考电位下操作的低电位参考电路部分; 位于所述有源层中并且可在第二参考电位下操作的高电位参考电路部分; 位于有源层中的电平移动元件形成部分，用于在第一和第二参考电位之间提供电平移位; 以及绝缘构件，其将所述支撑基板的第一和第二部分彼此绝缘，其中所述第一和第二部分的位置分别对应于所述低电位和高电位参考电路部分。

10. 发明授权

US07223668B2 Method of etching metallic thin film on thin film resistor 有权
标题翻译：在薄膜电阻上蚀刻金属薄膜的方法
公开(公告)号：US07223668B2
公开(公告)日：2007-05-29
申请号：US10944665
申请日：2004-09-17
申请人： Ichiro Ito , Satoshi Shiraki
发明人： Ichiro Ito , Satoshi Shiraki
IPC分类号： H01L21/467
CPC分类号： H01L28/24 , H01L21/32139
摘要： An Al film is formed on a barrier metal covering a thin film resistor to have a first opening. A photo-resist is formed on the Al film and in the opening, and is patterned to have a second opening having an opening area smaller than that of the first opening and open in the first opening to expose the barrier metal therefrom. Then, the barrier metal is etched through the second opening. Because the barrier metal is etched from an inner portion more than the opening end of the first opening, under-cut of the barrier metal is prevented.
摘要翻译：在覆盖薄膜电阻器的阻挡金属上形成具有第一开口的Al膜。在Al膜和开口中形成光致抗蚀剂，并且被图案化以具有开口面积小于第一开口的开口面积并在第一开口中开口的第二开口，以暴露出阻挡金属。然后，通过第二开口蚀刻阻挡金属。由于阻挡金属从第一开口的开口端的内部蚀刻，因此防止了阻挡金属的切割。

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