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1. 发明授权

US08854033B2 Current sensor, inverter circuit, and semiconductor device having the same 有权
标题翻译：电流传感器，逆变器电路和具有相同功能的半导体器件
公开(公告)号：US08854033B2
公开(公告)日：2014-10-07
申请号：US13150764
申请日：2011-06-01
申请人： Satoshi Shiraki , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
发明人： Satoshi Shiraki , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
IPC分类号： G01R1/20
CPC分类号： H01L27/1203 , G01R19/0092 , H01L21/76283 , H01L23/585 , H01L29/0696 , H01L29/405 , H01L29/7394 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.
摘要翻译：具有横向半导体元件的半导体器件包括半导体衬底，衬底上的第一电极，衬底上的第二电极和位于衬底中的隔离结构，以将衬底分成第一岛和与第一岛电绝缘的第二岛第一个岛屿。横向半导体元件包括位于第一岛中的主单元和位于第二岛中的感测单元。主电池使得第一电流在第一电极和第二电极之间流动，使得第一电流沿着基板的表面在横向方向上流动。通过检测流过感测单元的第二电流来检测第一电流。

2. 发明申请

US20120047418A1 INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, AND STORAGE MEDIUM 有权
标题翻译：信息处理设备，信息处理方法和存储介质
公开(公告)号：US20120047418A1
公开(公告)日：2012-02-23
申请号：US13175556
申请日：2011-07-01
申请人： Akio Nakagawa , Hisashi Ishikawa
发明人： Akio Nakagawa , Hisashi Ishikawa
IPC分类号： G06F11/10
CPC分类号： G06K15/408 , G06F13/00 , G06K15/40 , G06T1/60 , H04N1/32561 , H04N1/32593 , H04N1/405 , H04N1/4052
摘要： An information processing apparatus comprising: a reception unit adapted to receive a packet containing first data to be stored in a storage unit, a first address indicating an address of second data held in the storage unit, and a second address indicating an address at which the first data is to be written in the storage unit; an access unit adapted to read out the second data from the storage unit based on the first address, and write the first data in the storage unit based on the second address; and a transmission unit adapted to replace the first data of the packet received by the reception unit with the second data read out by the access unit, and transmit the packet.
摘要翻译：一种信息处理装置，包括：接收单元，适于接收包含要存储在存储单元中的第一数据的分组，指示保存在所述存储单元中的第二数据的地址的第一地址，以及指示所述第二地址，第一数据将被写入存储单元; 基于所述第一地址从所述存储单元读出所述第二数据的存取单元，基于所述第二地址将所述第一数据写入所述存储单元; 以及发送单元，其适于将接收单元接收到的分组的第一数据替换为由接入单元读出的第二数据，并发送分组。

3. 发明申请

US20120032313A1 SEMICONDUCTOR DEVICE HAVING LATERAL DIODE 有权
标题翻译：具有横向二极管的半导体器件
公开(公告)号：US20120032313A1
公开(公告)日：2012-02-09
申请号：US13197719
申请日：2011-08-03
申请人： Takao YAMAMOTO , Norihito Tokura , Hisato Kato , Akio Nakagawa
发明人： Takao YAMAMOTO , Norihito Tokura , Hisato Kato , Akio Nakagawa
IPC分类号： H01L29/861
CPC分类号： H01L29/868 , H01L27/0664 , H01L29/0615 , H01L29/0692 , H01L29/0878 , H01L29/1095 , H01L29/405 , H01L29/42368 , H01L29/7394 , H01L29/7824
摘要： A semiconductor device having a lateral diode includes a semiconductor layer, a first semiconductor region in the semiconductor layer, a contact region having an impurity concentration greater than that of the first semiconductor region, a second semiconductor region located in the semiconductor layer and separated from the contact region, a first electrode electrically connected through the contact region to the first semiconductor region, and a second electrode electrically connected to the second semiconductor region. The second semiconductor region includes a low impurity concentration portion, a high impurity concentration portion, and an extension portion. The second electrode forms an ohmic contact with the high impurity concentration portion. The extension portion has an impurity concentration greater than that of the low impurity concentration portion and extends in a thickness direction of the semiconductor layer.
摘要翻译：具有横向二极管的半导体器件包括半导体层，半导体层中的第一半导体区域，具有大于第一半导体区域的杂质浓度的杂质浓度的接触区域，位于半导体层中并与该半导体层分离的第二半导体区域接触区域，通过接触区域电连接到第一半导体区域的第一电极和与第二半导体区域电连接的第二电极。第二半导体区域包括低杂质浓度部分，高杂质浓度部分和延伸部分。第二电极与高杂质浓度部分形成欧姆接触。延伸部分的杂质浓度大于低杂质浓度部分的杂质浓度，并且在半导体层的厚度方向上延伸。

4. 发明申请

US20110298446A1 CURRENT SENSOR, INVERTER CIRCUIT, AND SEMICONDUCTOR DEVICE HAVING THE SAME 有权
标题翻译：电流传感器，逆变器电路和具有该电流传感器的半导体器件
公开(公告)号：US20110298446A1
公开(公告)日：2011-12-08
申请号：US13150764
申请日：2011-06-01
申请人： Satoshi SHIRAKI , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
发明人： Satoshi SHIRAKI , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
IPC分类号： G01R1/20 , H01L29/739
CPC分类号： H01L27/1203 , G01R19/0092 , H01L21/76283 , H01L23/585 , H01L29/0696 , H01L29/405 , H01L29/7394 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.
摘要翻译：具有横向半导体元件的半导体器件包括半导体衬底，衬底上的第一电极，衬底上的第二电极和位于衬底中的隔离结构，以将衬底分成第一岛和与第一岛电绝缘的第二岛第一个岛屿。横向半导体元件包括位于第一岛中的主单元和位于第二岛中的感测单元。主电池使得第一电流在第一电极和第二电极之间流动，使得第一电流沿着基板的表面在横向方向上流动。通过检测流过感测单元的第二电流来检测第一电流。

5. 发明授权

US08031954B2 Image encoding apparatus and control method thereof using prediction encoding and pixel classification 有权
标题翻译：图像编码装置及其使用预测编码和像素分类的控制方法
公开(公告)号：US08031954B2
公开(公告)日：2011-10-04
申请号：US12107844
申请日：2008-04-23
申请人： Akio Nakagawa , Hisashi Ishikawa , Ryoko Mise
发明人： Akio Nakagawa , Hisashi Ishikawa , Ryoko Mise
IPC分类号： G06K9/36 , G06K9/46
CPC分类号： H04N19/93 , H04N19/102 , H04N19/105 , H04N19/12 , H04N19/146 , H04N19/17 , H04N19/176 , H04N19/182 , H04N19/186 , H04N19/593 , H04N19/60
摘要： According to this invention, encoded data are generated by sorting pixel data in a block according to different scan start positions and different scan routes upon generating encoded data for respective blocks, and encoded data with a smallest data amount of these encoded data is outputted. To this end, a block generation unit inputs blocks each defined by 8×8 pixels from image data to be encoded. Four encoding processing units respectively sort inputted 8×8 pixels according to the information stored in scan start position information storage units and scan route information storage units. The respective encoding processing units generate encoded data based on the sorted pixel data. A selector selects and outputs encoded data with a smallest data size from those generated by the encoding processing units.
摘要翻译：根据本发明，通过根据不同的扫描开始位置和不同的扫描路径对块中的像素数据进行排序，生成编码数据，生成各个块的编码数据，并输出这些编码数据的最小数据量的编码数据。为此，块生成单元从要编码的图像数据输入由8×8像素定义的块。四个编码处理单元根据存储在扫描开始位置信息存储单元和扫描路径信息存储单元中的信息分别输入8×8像素。相应的编码处理单元基于分类的像素数据生成编码数据。选择器选择并输出具有由编码处理单元生成的数据的最小数据大小的编码数据。

6. 发明授权

US07564097B2 Trench-gated MOSFET including schottky diode therein 有权
标题翻译：沟槽栅MOSFET，其中包括肖特基二极管
公开(公告)号：US07564097B2
公开(公告)日：2009-07-21
申请号：US11740045
申请日：2007-04-25
申请人： Syotaro Ono , Akio Nakagawa , Yusuke Kawaguchi , Yoshihiro Yamaguchi
发明人： Syotaro Ono , Akio Nakagawa , Yusuke Kawaguchi , Yoshihiro Yamaguchi
IPC分类号： H01L29/94
CPC分类号： H01L29/7813 , H01L29/1095
摘要： Disclosed is a trench MOSFET, including: a trench gate structure having a gate electrode and a gate insulating film; an n-type diffusion layer formed to face the gate electrode via the gate insulating film at an upper portion of the trench; a p-type base layer formed to face the gate electrode via the gate insulating film at a lower portion than the upper portion; an n-type epitaxial layer locating to face the gate electrode via the gate insulating film at a further lower portion than the lower portion; a metal layer formed departing from the trench in parallel with a depth direction of the trench, penetrating the n-type diffusion layer and the p-type base layer, to reach the n-type epitaxial layer; and a p-type layer with higher impurity concentration than the p-type base layer, locating to be in contact with the p-type base layer and the metal layer.
摘要翻译：公开了一种沟槽MOSFET，其包括：具有栅极电极和栅极绝缘膜的沟槽栅极结构; 形成为在沟槽的上部经由栅极绝缘膜与栅电极对置的n型扩散层; p型基底层，其在比上部更低的一部分处经由栅极绝缘膜形成为面对栅电极; n型外延层，其定位成在比下部更下方的一部分经由栅极绝缘膜面对栅电极; 与沟槽的深度方向平行地形成的穿过n型扩散层和p型基底层的金属层，以到达n型外延层; 以及比p型基底层高的杂质浓度的p型层，与p型基底层和金属层接触。

7. 发明申请

US20080292197A1 IMAGE ENCODING APPARATUS AND CONTROL METHOD THEREOF 有权
标题翻译：图像编码装置及其控制方法
公开(公告)号：US20080292197A1
公开(公告)日：2008-11-27
申请号：US12107844
申请日：2008-04-23
申请人： Akio Nakagawa , Hisashi Ishikawa , Ryoko Mise
发明人： Akio Nakagawa , Hisashi Ishikawa , Ryoko Mise
IPC分类号： G06K9/36
CPC分类号： H04N19/93 , H04N19/102 , H04N19/105 , H04N19/12 , H04N19/146 , H04N19/17 , H04N19/176 , H04N19/182 , H04N19/186 , H04N19/593 , H04N19/60
摘要： According to this invention, encoded data are generated by sorting pixel data in a block according to different scan start positions and different scan routes upon generating encoded data for respective blocks, and encoded data with a smallest data amount of these encoded data is outputted. To this end, a block generation unit inputs blocks each defined by 8×8 pixels from image data to be encoded. Four encoding processing units respectively sort inputted 8×8 pixels according to the information stored in scan start position information storage units and scan route information storage units. The respective encoding processing units generate encoded data based on the sorted pixel data. A selector selects and outputs encoded data with a smallest data size from those generated by the encoding processing units.
摘要翻译：根据本发明，通过根据不同的扫描开始位置和不同的扫描路径对块中的像素数据进行排序，生成编码数据，生成各个块的编码数据，并输出这些编码数据的最小数据量的编码数据。为此，块生成单元从要编码的图像数据输入由8×8像素定义的块。四个编码处理单元根据存储在扫描开始位置信息存储单元和扫描路径信息存储单元中的信息分别输入8×8像素。相应的编码处理单元基于分类的像素数据生成编码数据。选择器选择并输出具有由编码处理单元生成的数据的最小数据大小的编码数据。

8. 发明授权

US07432579B2 Semiconductor device with horizontal MOSFET and Schottky barrier diode provided on single substrate 失效
标题翻译：在单个基板上提供具有水平MOSFET和肖特基势垒二极管的半导体器件
公开(公告)号：US07432579B2
公开(公告)日：2008-10-07
申请号：US10959201
申请日：2004-10-07
申请人： Tomoko Matsudai , Kazutoshi Nakamura , Akio Nakagawa
发明人： Tomoko Matsudai , Kazutoshi Nakamura , Akio Nakagawa
IPC分类号： H01L29/47 , H01L29/872
CPC分类号： H01L27/0727
摘要： A MOS field-effect transistor includes a semiconductor substrate of a first-conductivity type, a semiconductor layer of the first-conductivity type, a source region of a second-conductivity type, a first drain region of the second-conductivity type, a resurf layer of the second-conductivity type provided in the surface of the semiconductor layer between the source region and the first drain region in contact with the first drain region, and having a lower impurity concentration than the first drain region, a gate insulation film, and a gate electrode provided on the gate insulation film between the source region and resurf layer. A Schottky barrier diode includes a second drain region of the second-conductivity type provided in the surface of the semiconductor layer separate from the first drain region in a direction away from the gate electrode, and a Schottky electrode provided on the semiconductor layer between the first and second drain regions.
摘要翻译： MOS场效应晶体管包括第一导电类型的半导体衬底，第一导电类型的半导体层，第二导电类型的源极区域，第二导电类型的第一漏极区域，第二导电类型的半导体层，所述第二导电型层设置在与所述第一漏极区域接触的所述源极区域和所述第一漏极区域之间的所述半导体层的表面中，并且具有比所述第一漏极区域低的杂质浓度，栅极绝缘膜和栅电极，设置在源极区域和复合层之间的栅极绝缘膜上。肖特基势垒二极管包括设置在半导体层的表面上的第二导电类型的第二漏极区域，该第二漏极区域在远离栅极电极的方向上与第一漏极区域分开，以及肖特基电极，设置在第一和第二漏区。

9. 发明申请

US20070290237A1 INSULATED GATE BIPOLAR TRANSISTOR AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：绝缘栅双极晶体管及其制造方法
公开(公告)号：US20070290237A1
公开(公告)日：2007-12-20
申请号：US11763558
申请日：2007-06-15
申请人： Akio NAKAGAWA
发明人： Akio NAKAGAWA
IPC分类号： H01L29/80
CPC分类号： H01L29/7397 , H01L29/0834 , H01L29/36
摘要： An insulated gate bipolar transistor has a p-type emitter layer; an n-type buffer layer provided on the p-type emitter layer; an n-type base layer provided on the n-type buffer layer and having a higher resistivity than the n-type buffer layer; a p-type base layer provided in part of an upper surface of the n-type base layer; an n-type source layer provided in part of an upper surface of the p-type base layer; a trench extending through the n-type source layer and the p-type base layer to the n-type base layer; a gate electrode provided in the trench; and a gate insulating film provided between the gate electrode and an inner surface of the trench. The p-type emitter layer has a thickness of 5 to 50 μm and a dopant concentration of 2×1016 to 1×1018 cm−3.
摘要翻译：绝缘栅双极晶体管具有p型发射极层; 设置在p型发射极层上的n型缓冲层; 设置在n型缓冲层上并具有比n型缓冲层更高的电阻率的n型基极层; 设置在n型基底层的上表面的一部分的p型基底层; 设置在p型基底层的上表面的一部分的n型源极层; 通过n型源极层和p型基极层延伸到n型基极层的沟槽; 设置在沟槽中的栅电极; 以及栅极绝缘膜，设置在所述栅电极和所述沟槽的内表面之间。 p型发射极层的厚度为5〜50μm，掺杂剂浓度为2×10 16〜1×10 8 cm -3以下。

10. 发明授权

US07115946B2 MOS transistor having an offset region 有权
标题翻译： MOS晶体管具有偏移区域
公开(公告)号：US07115946B2
公开(公告)日：2006-10-03
申请号：US09956015
申请日：2001-09-20
申请人： Yusuke Kawaguchi , Kazutoshi Nakamura , Akio Nakagawa
发明人： Yusuke Kawaguchi , Kazutoshi Nakamura , Akio Nakagawa
IPC分类号： H01L29/76
CPC分类号： H01L29/66681 , H01L27/088 , H01L29/0696 , H01L29/0847 , H01L29/42368 , H01L29/4238 , H01L29/66659 , H01L29/66674 , H01L29/7816 , H01L29/7835
摘要： A semiconductor device includes a semiconductor region of a first conductivity type, a drain region of the first conductivity type, an offset region of the first conductivity type, a body region of the second conductivity type, a source region of the first conductivity type, a gate insulating film and a gate electrode. The drain region is provided in a surface of the semiconductor region and is shaped like a stripe. The offset region is provided in the surface of the semiconductor region and surrounds the drain region. The body region is provided in the surface of the semiconductor region and surrounds the offset region. The source region is provided in a surface of the body region and surrounds the offset region. The gate insulating film is provided on a part of the body region. The gate electrode is provided on the gate insulating film.
摘要翻译：半导体器件包括第一导电类型的半导体区域，第一导电类型的漏极区域，第一导电类型的偏移区域，第二导电类型的体区域，第一导电类型的源极区域，栅极绝缘膜和栅电极。漏极区域设置在半导体区域的表面中并且形状为条状。偏移区域设置在半导体区域的表面中并且围绕漏极区域。身体区域设置在半导体区域的表面中并且包围偏移区域。源区域设置在身体区域的表面中并且围绕偏移区域。栅极绝缘膜设置在身体区域的一部分上。栅电极设置在栅极绝缘膜上。

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