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1. 发明授权

US08823022B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08823022B2
公开(公告)日：2014-09-02
申请号：US13209085
申请日：2011-08-12
申请人： Chao Hsing Chen , Chien Fu Shen , Tsun Kai Ko , Schang Jing Hon
发明人： Chao Hsing Chen , Chien Fu Shen , Tsun Kai Ko , Schang Jing Hon
IPC分类号： H01L33/08
CPC分类号： H01L23/60 , H01L25/0753 , H01L27/153 , H01L27/156 , H01L33/62 , H01L2924/0002 , H05B33/089 , Y02B20/341 , H01L2924/00
摘要： A light emitting device includes a serially-connected LED array of a plurality of LED cells epitaxially formed on a substrate. The LED array includes a first LED cell, and a second LED cell adjacent to each other, and a serially-connected LED sub-array including at least three LED cells intervening the first and the second LED cells. Each LED cell includes a first semiconductor layer formed on the substrate; a second semiconductor layer formed on the first semiconductor layer; and an active layer formed between the first semiconductor layer and the second semiconductor layer; wherein the distance between the first semiconductor layer of the first LED cell and that of the second LED cell is larger than 30 μm, and one of the first semiconductor layers and/or one of the second semiconductor layers of the LED cells includes a round corner with a radius of curvature not less than 15 μm.
摘要翻译：发光器件包括在衬底上外延形成的多个LED单元的串联LED阵列。 LED阵列包括彼此相邻的第一LED单元和第二LED单元，以及包括至少三个LED单元的串联连接的LED子阵列，所述至少三个LED单元插入第一和第二LED单元。每个LED单元包括形成在基板上的第一半导体层; 形成在所述第一半导体层上的第二半导体层; 以及形成在所述第一半导体层和所述第二半导体层之间的有源层; 其中所述第一LED电池的第一半导体层和所述第二LED电池的第一半导体层之间的距离大于30μm，并且所述第一半导体层和/或所述LED电池的所述第二半导体层中的一个包括圆角曲率半径不小于15μm。

2. 发明申请

US20120049208A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20120049208A1
公开(公告)日：2012-03-01
申请号：US13198396
申请日：2011-08-04
申请人： Chao Hsing Chen , Chien Fu Shen , Tsun Kai Ko , Schang Jing Hon , Hsin Mao Liu
发明人： Chao Hsing Chen , Chien Fu Shen , Tsun Kai Ko , Schang Jing Hon , Hsin Mao Liu
IPC分类号： H01L33/62
CPC分类号： H01L23/60 , H01L25/0753 , H01L27/153 , H01L27/156 , H01L33/62 , H01L2924/0002 , H05B33/089 , Y02B20/341 , H01L2924/00
摘要： The present disclosure provides a light emitting device, including a serially-connected LED array including a plurality of LED cells on a single substrate, including a first LED cell, a second LED cell, and a serially-connected LED sub-array including at least three LED cells intervening the first and second LED cell, wherein each of the first and second LED cell including a first side and a second side that the first side of the first LED cell and/or the second LED cell neighboring to the LED sub-array, and the second side of the first LED cell neighboring to the second side of the second LED cell; a trench between the second sides of the first and second LED cells; and a protecting structure formed near the trench to prevent the light-emitting device from being damaged near the trench by a surge voltage higher than a normal operating voltage of the light emitting device.
摘要翻译：本公开提供了一种发光器件，包括串联连接的LED阵列，其包括在单个衬底上的多个LED电池，包括第一LED电池，第二LED电池和串联连接的LED子阵列，至少包括介于第一和第二LED单元之间的三个LED单元，其中第一和第二LED单元中的每一个包括第一LED单元和/或第二LED单元的与LED子单元相邻的第一侧和第二侧，阵列，以及与第二LED单元的第二侧相邻的第一LED单元的第二面; 第一和第二LED电池的第二侧之间的沟槽; 以及形成在沟槽附近的保护结构，以防止发光器件在高于发光器件的正常工作电压的浪涌电压下在沟槽附近损坏。

3. 发明申请

US20100052000A1 OPTOELECTRONIC SEMICONDUCTOR DEVICE 有权
标题翻译：光电半导体器件
公开(公告)号：US20100052000A1
公开(公告)日：2010-03-04
申请号：US12562917
申请日：2009-09-18
申请人： Tsun-Kai KO , Schang-Jing HON , Chien-Kai CHUNG , Hui-Chen YEH , An-Ju LIN , Chien-Fu SHEN , Crux OU
发明人： Tsun-Kai KO , Schang-Jing HON , Chien-Kai CHUNG , Hui-Chen YEH , An-Ju LIN , Chien-Fu SHEN , Crux OU
IPC分类号： H01L33/00
CPC分类号： H01L33/387 , H01L33/06 , H01L33/14 , H01L33/22 , H01L33/382 , H01L33/42 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor device in accordance with an embodiment of present invention includes a conversion unit having a first side; an electrical connector; a contact layer having an outer perimeter; and at least three successive discontinuous-regions formed along the outer perimeter and having at least one different factor; wherein the electrical connector, the contact layer, and the discontinuous-regions are formed on the first side of the conversion unit.
摘要翻译：根据本发明实施例的光电子半导体器件包括具有第一侧的转换单元; 电连接器; 具有外周的接触层; 以及沿着所述外周边形成并且具有至少一个不同因素的至少三个连续不连续区域; 其中所述电连接器，所述接触层和所述不连续区形成在所述转换单元的第一侧上。

4. 发明授权

US07345315B2 Gallium nitride based light-emitting device 有权
标题翻译：基于氮化镓的发光器件
公开(公告)号：US07345315B2
公开(公告)日：2008-03-18
申请号：US11352205
申请日：2006-02-13
申请人： Schang-Jing Hon , Jenn-Bin Huang
发明人： Schang-Jing Hon , Jenn-Bin Huang
IPC分类号： H01L29/22
CPC分类号： H01L33/32 , H01L33/105 , H01L33/465
摘要： A manufacturing method and a thus produced light-emitting structure for a white colored light-emitting device (LED) and the LED itself are disclosed. The white colored LED includes a resonant cavity structure, producing and mixing lights which may mix into a white colored light in the resonant cavity structure, so that the white colored LED may be more accurately controlled in its generated white colored light, which efficiently reduces deficiency, generates natural white colored light and aids in luminous efficiency promotion. In addition to the resonant cavity structure, the light-emitting structure also includes a contact layer, an n-type metal electrode and a p-type metal electrode.
摘要翻译：公开了一种用于白色发光器件（LED）和LED本身的制造方法和由此制造的发光结构。白色LED包括谐振腔结构，产生和混合可在谐振腔结构中混合成白色光的光，从而可以在其产生的白色光中更准确地控制白色LED，从而有效地减少缺陷产生天然白色光，有助于发光效率的提升。除了谐振腔结构之外，发光结构还包括接触层，n型金属电极和p型金属电极。

5. 发明授权

US07208752B2 Structure and manufacturing of gallium nitride light emitting diode 有权
标题翻译：氮化镓发光二极管的结构和制造
公开(公告)号：US07208752B2
公开(公告)日：2007-04-24
申请号：US10840267
申请日：2004-05-07
申请人： Mu-Jen Lai , Schang-Jing Hon , Hsueh-Feng Sun , Shih-Ming Yang
发明人： Mu-Jen Lai , Schang-Jing Hon , Hsueh-Feng Sun , Shih-Ming Yang
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/32 , H01L33/14 , Y10S257/918
摘要： A structure of a gallium nitride light emitting diode has a transparent conductive window layer including a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added domain contact layer, the diffusion barrier layer and the P-type semiconductor layer of the light emitting diode are put into ohmic contact. And then, the rising of the contact resistivity is barred by applying the diffusion barrier layer to block the diffusion of the window layer from the contact with the domain contact layer so as to lower down the operating voltage and advance the transparency.
摘要翻译：氮化镓发光二极管的结构具有包括扩散阻挡层，欧姆接触层和窗口层的透明导电窗口层。通过使用添加的畴接触层，发光二极管的扩散阻挡层和P型半导体层被欧姆接触。然后，通过施加扩散阻挡层来阻止窗口层与域接触层的接触的扩散，从而降低工作电压并提高透明度，阻止了接触电阻率的上升。

6. 发明申请

US20060244017A1 Gallium-nitride based light emitting diode structure and fabrication thereof 有权
标题翻译：氮化镓基发光二极管结构及其制造
公开(公告)号：US20060244017A1
公开(公告)日：2006-11-02
申请号：US11428405
申请日：2006-07-03
申请人： Mu-Jen Lai , Schang-Jing Hon
发明人： Mu-Jen Lai , Schang-Jing Hon
IPC分类号： H01L29/80 , H01L31/112
CPC分类号： H01L33/42 , H01L33/32
摘要： A method for fabricating GaN-based LED is provided. The method first forms a first contact spreading metallic layer on top of the texturing surface of the p-type ohmic contact layer. The method then forms a second and a third contact spreading metallic layers on top of the first contact spreading layer. The p-type transparent metallic conductive layer composed of the three contact spreading metallic layers, after undergoing an alloying process within an oxygenic or nitrogenous environment under a high temperature, would have a superior conductivity. The p-type transparent metallic conductive layer could enhance the lateral contact uniformity between the p-type metallic electrode and the p-type ohmic contact layer, so as to avoid the localized light emission resulted from the uneven distribution of the second contact spreading metallic layer within the third contact spreading metallic layer. The GaN-based LED's working voltage and external quantum efficiency are also significantly improved.
摘要翻译：提供了一种用于制造GaN基LED的方法。该方法首先在p型欧姆接触层的纹理表面的顶部形成第一接触扩展金属层。该方法然后在第一接触扩散层的顶部上形成第二和第三接触扩展金属层。由三层接触扩散金属层构成的p型透明金属导电层，在高温下在含氧或含氮环境中进行合金化处理后，具有优异的导电性。 p型透明金属导电层可以增强p型金属电极和p型欧姆接触层之间的横向接触均匀性，以避免由于第二接触扩散金属层的不均匀分布引起的局部发光在第三接触扩散金属层内。 GaN基LED的工作电压和外部量子效率也得到显着提高。

7. 发明授权

US06881983B2 Efficient light emitting diodes and lasers 有权
公开(公告)号：US06881983B2
公开(公告)日：2005-04-19
申请号：US10207649
申请日：2002-07-26
申请人： Jagdish Narayan , Jinlin Ye , Schang-Jing Hon , Ken Fox , Jyh Chia Chen , Hong K. Choi , John C. C. Fan
发明人： Jagdish Narayan , Jinlin Ye , Schang-Jing Hon , Ken Fox , Jyh Chia Chen , Hong K. Choi , John C. C. Fan
IPC分类号： H01L33/06 , H01L33/32 , H01S5/10 , H01S5/34 , H01S5/343 , H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/106 , H01S5/3425 , H01S5/34333
摘要： An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.

8. 发明授权

US06492661B1 Light emitting semiconductor device having reflection layer structure 有权
标题翻译：具有反射层结构的发光半导体器件
公开(公告)号：US06492661B1
公开(公告)日：2002-12-10
申请号：US09434316
申请日：1999-11-04
申请人： Fen-Ren Chien , Schang-Jing Hon , Mu-Jen Lai
发明人： Fen-Ren Chien , Schang-Jing Hon , Mu-Jen Lai
IPC分类号： H01L3300
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/145
摘要： A light-emitting device with a reflection layer is disclosed. The reflection layer is formed on a light emitting stack structure. A second substrate is subsequently combined with the reflection layer, and then the original substrate of the stack structure is removed, such that the second substrate becomes the substrate of the device. The reflection layer can effectively reflect the light emitted from the light emitting stack structure and directed to the substrate, and thus can increase the light-emitting efficiency of a surface-emitting type light-emitting device. The invention can also convert a light-emnitting device using an insulated substrate to be the one having vertical type electrode structure so as to effectively reduce the wafer area used for a die and facilitate subsequent wiring and packaging processes using traditional mechanisms.
摘要翻译：公开了一种具有反射层的发光器件。反射层形成在发光堆叠结构上。随后将第二衬底与反射层组合，然后去除堆叠结构的原始衬底，使得第二衬底变成器件的衬底。反射层可以有效地反射从发光堆叠结构发出的光并被引导到衬底，从而可以提高表面发射型发光器件的发光效率。本发明还可以将使用绝缘基板的发光装置转换为具有垂直型电极结构的发光装置，以便有效地减少用于晶片的晶片面积，并利用传统的机制促进后续的布线和封装工艺。

9. 发明授权

US09232586B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US09232586B2
公开(公告)日：2016-01-05
申请号：US13336735
申请日：2011-12-23
申请人： Schang-Jing Hon , Chao-Hsing Chen , Hsin-Mao Liu
发明人： Schang-Jing Hon , Chao-Hsing Chen , Hsin-Mao Liu
IPC分类号： H05B37/02 , H05B33/08
CPC分类号： H05B33/0824 , H01L2924/0002 , H05B33/0815 , Y02B20/346 , H01L2924/00
摘要： A light-emitting device is capable of receiving a first voltage signal, a second voltage signal, and a third voltage signal in sequence. The light-emitting device includes a first light-emitting unit, a second light-emitting unit, and a switching. The first voltage signal, the second voltage signal, and the third voltage signal is configured to introduce a first current signal, a second current signal, and a third current signal, respectively. The light-emitting device is configured to emit a first light when introducing the first current signal, the second current signal, and the third current signal. The light-emitting device is configured to emit a second light when introducing the second current signal and the third current signal. The light-emitting device is configured to emit a third light when introducing the second current signal.
摘要翻译：发光装置能够依次接收第一电压信号，第二电压信号和第三电压信号。发光装置包括第一发光单元，第二发光单元和开关。第一电压信号，第二电压信号和第三电压信号被配置为分别引入第一电流信号，第二电流信号和第三电流信号。发光装置被配置为在引入第一电流信号，第二电流信号和第三电流信号时发射第一光。发光装置被配置为在引入第二电流信号和第三电流信号时发射第二光。发光装置被配置为在引入第二电流信号时发射第三光。

10. 发明授权

US09196605B2 Light-emitting structure 有权
标题翻译：发光结构
公开(公告)号：US09196605B2
公开(公告)日：2015-11-24
申请号：US13230988
申请日：2011-09-13
申请人： Chien-Fu Shen , Chao-Hsing Chen , Tsun-Kai Ko , Schang-Jing Hon , Sheng-Jie Hsu , De-Shan Kuo , Hsin-Ying Wang , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Chien-Kai Chung
发明人： Chien-Fu Shen , Chao-Hsing Chen , Tsun-Kai Ko , Schang-Jing Hon , Sheng-Jie Hsu , De-Shan Kuo , Hsin-Ying Wang , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Chien-Kai Chung
IPC分类号： H01L33/08 , H01L25/075 , H01L27/15 , H01L33/20 , H01L33/38 , H01L33/62
CPC分类号： H01L27/156 , H01L25/0753 , H01L27/153 , H01L33/20 , H01L33/382 , H01L33/385 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： An embodiment of the present application discloses a light-emitting structure, comprising a substrate, a first unit and a second unit separately form on the substrate; a trench formed between the first unit and the second unit, and having a bottom portion exposing the substrate, a less steep sidewall and a steeper sidewall steeper than the less steep sidewall; and an electrical connection connecting the first unit and the second unit and covering the first unit, the second unit and the less steep sidewall; wherein the sidewalls directly connect to the bottom portion, and the steeper sidewall is devoid of the electrical connection covering.
摘要翻译：本申请的一个实施例公开了一种发光结构，其包括基板，第一单元和在基板上分开形成的第二单元; 形成在所述第一单元和所述第二单元之间的沟槽，并且具有暴露所述基板的底部部分，比所述较不陡峭的侧壁更陡峭的侧壁和更陡峭的侧壁; 以及连接第一单元和第二单元并覆盖第一单元，第二单元和较不陡峭侧壁的电连接; 其中所述侧壁直接连接到所述底部部分，并且所述较陡侧壁没有电连接覆盖物。

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