专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07502020B2 Liquid crystal display device with voltage compensator 有权
标题翻译：带电压补偿器的液晶显示装置
公开(公告)号：US07502020B2
公开(公告)日：2009-03-10
申请号：US11022652
申请日：2004-12-28
申请人： Seok Su Kim , Hyun Seok Kim , Sun Young Choi
发明人： Seok Su Kim , Hyun Seok Kim , Sun Young Choi
IPC分类号： G09G5/00 , G09G3/36
CPC分类号： G09G3/3655 , G09G2320/0233
摘要： A liquid crystal display device and a driving method thereof for preventing a brightness difference between horizontal line blocks are disclosed. In the liquid crystal display device, a liquid crystal display panel has a liquid crystal cell matrix. A power supply generates a common voltage. Common lines directly on a substrate of the liquid crystal display panel are connected to a common electrode of the liquid crystal cell. A common voltage compensator compensates for the common voltage into a large resistance value with a resistance value greater than a combination of resistances of the common lines and the large resistance directly between the power supply and the common lines.
摘要翻译：公开了一种用于防止水平线块之间的亮度差的液晶显示装置及其驱动方法。在液晶显示装置中，液晶显示面板具有液晶单元矩阵。电源产生公共电压。直接在液晶显示面板的基板上的公用线连接到液晶单元的公共电极。公共电压补偿器将公共电压补偿为大电阻值，其电阻值大于公共线的电阻和电源和公共线之间的大电阻的组合。

2. 发明授权

US07439161B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07439161B2
公开(公告)日：2008-10-21
申请号：US11484770
申请日：2006-07-12
申请人： Seok Su Kim
发明人： Seok Su Kim
IPC分类号： H01L21/46
CPC分类号： H01L23/3192 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device includes forming a first insulating layer on a semiconductor substrate having a semiconductor chip region and a scribe region; forming a mask pattern on the first insulating layer; removing portions of the first insulating layer using the mask pattern so as to form a contact hole in the semiconductor chip region and a scribe region opening exposing the scribe region; forming a metal contact plug in a contact hole and a metal sidewall on a side of the first insulating layer in the scribe region opening; forming a metallization wiring on the first insulating layer; and forming a second insulating layer and a protective layer over the metal contact plug and the metal sidewall so as to cover the semiconductor chip region and the scribe region.
摘要翻译：一种制造半导体器件的方法包括：在具有半导体芯片区域和划线区域的半导体衬底上形成第一绝缘层; 在所述第一绝缘层上形成掩模图案; 使用所述掩模图案去除所述第一绝缘层的部分，以在所述半导体芯片区域中形成接触孔，以及使所述划线区域露出的划片区域; 在所述划片区域开口中的所述第一绝缘层的一侧的接触孔和金属侧壁中形成金属接触塞; 在所述第一绝缘层上形成金属化布线; 以及在金属接触插塞和金属侧壁上形成第二绝缘层和保护层，以覆盖半导体芯片区域和划线区域。

3. 发明授权

US07259098B2 Methods for fabricating semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07259098B2
公开(公告)日：2007-08-21
申请号：US10747599
申请日：2003-12-29
申请人： Seok Su Kim , Chee Hong Choi
发明人： Seok Su Kim , Chee Hong Choi
IPC分类号： H01L21/302
CPC分类号： H01L29/66825 , H01L21/28273 , H01L29/42324
摘要： Semiconductor devices and methods for fabricating a semiconductor devices are disclosed. A disclosed method comprises: forming a first gate electrode functioning as a flash memory; forming first spacers on sidewalls of the first gate electrode; forming a second gate electrode functioning as a normal gate electrode; forming a source/drain region with a shallow junction by performing a first ion implantation process using at least one of the first spacers as a mask; forming second spacers on a sidewall of the first spacer and on sidewalls of the second gate electrode; forming a source/drain region with a deep junction by performing a second ion implantation process using the second spacers as a mask.
摘要翻译：公开了用于制造半导体器件的半导体器件和方法。所公开的方法包括：形成用作闪存的第一栅电极; 在所述第一栅电极的侧壁上形成第一间隔物; 形成用作正常栅电极的第二栅电极; 通过使用所述第一间隔物中的至少一个作为掩模执行第一离子注入工艺来形成具有浅结的源极/漏极区域; 在所述第一间隔物的侧壁和所述第二栅电极的侧壁上形成第二间隔物; 通过使用第二间隔物作为掩模进行第二离子注入工艺，形成具有深结的源极/漏极区域。

4. 发明授权

US08436849B2 Circuit driving for liquid crystal display device 有权
标题翻译：液晶显示装置的电路驱动
公开(公告)号：US08436849B2
公开(公告)日：2013-05-07
申请号：US12822827
申请日：2010-06-24
申请人： Soo-Ho Jang , Seok-Su Kim , Tae-Young Jung
发明人： Soo-Ho Jang , Seok-Su Kim , Tae-Young Jung
IPC分类号： G06F3/038
CPC分类号： G09G3/3677 , G09G2320/0247
摘要： The present invention relates to a circuit for driving a liquid crystal display device in which no multi-flicker preventive signal FLK, but only single flicker preventive signal FLK, is used for reducing numbers of pins of a timing controller and a level shifter. The circuit for driving a liquid crystal display device includes a liquid crystal panel having a plurality of pixel regions for displaying an image, a timing controller for generating one flicker preventive signal and a plurality of clock signals and gate control signals to control driving timing of a gate driver, a gate pulse modulation unit for logically operating the one flicker preventive signal and the plurality of clock signals from the timing controller to generate a plurality of flicker preventive signals, and modulating a gate high voltage from the timing controller according to each of the plurality of flicker preventive signals generated thus to generate a plurality of modulated gate on voltages; a level shifter unit for changing the plurality of clock signals from the timing controller according to the plurality of modulated gate on voltages from the gate pulse modulation unit and a gate low voltage from the timing controller to generate a plurality of level shifted and modulated clock signals; and a gate driver for driving gate lines on the liquid crystal panel according to the a plurality of level shifted and modulated clock signals.
摘要翻译：本发明涉及一种用于驱动液晶显示装置的电路，其中不使用多闪烁防止信号FLK，而仅使用单个防闪烁信号FLK来减少定时控制器和电平转换器的引脚数。用于驱动液晶显示装置的电路包括具有用于显示图像的多个像素区域的液晶面板，用于产生一个防闪烁信号的定时控制器，以及多个时钟信号和门控制信号，以控制液晶显示装置的驱动定时栅极驱动器，门脉冲调制单元，用于逻辑地操作来自定时控制器的一个防闪烁信号和多个时钟信号，以产生多个防闪烁信号，并且根据每个的时序控制器调制栅极高电压多个防止闪烁信号产生，从而产生多个调制栅极电压; 电平移位器单元，用于根据来自门脉冲调制单元的多个调制栅极导通电压和来自定时控制器的栅极低电压，从定时控制器改变多个时钟信号，以产生多个电平移位和调制时钟信号 ; 以及用于根据多个电平移位和调制时钟信号在液晶面板上驱动栅极线的栅极驱动器。

5. 发明申请

US20110157148A1 CIRCUIT DRIVING FOR LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：液晶显示装置的电路驱动
公开(公告)号：US20110157148A1
公开(公告)日：2011-06-30
申请号：US12822827
申请日：2010-06-24
申请人： Soo-Ho Jang , Seok-Su Kim , Tae-Young Jung
发明人： Soo-Ho Jang , Seok-Su Kim , Tae-Young Jung
IPC分类号： G06F3/038
CPC分类号： G09G3/3677 , G09G2320/0247
摘要： The present invention relates to a circuit for driving a liquid crystal display device in which no multi-flicker preventive signal FLK, but only single flicker preventive signal FLK, is used for reducing numbers of pins of a timing controller and a level shifter. The circuit for driving a liquid crystal display device includes a liquid crystal panel having a plurality of pixel regions for displaying an image, a timing controller for generating one flicker preventive signal and a plurality of clock signals and gate control signals to control driving timing of a gate driver, a gate pulse modulation unit for logically operating the one flicker preventive signal and the plurality of clock signals from the timing controller to generate a plurality of flicker preventive signals, and modulating a gate high voltage from the timing controller according to each of the plurality of flicker preventive signals generated thus to generate a plurality of modulated gate on voltages; a level shifter unit for changing the plurality of clock signals from the timing controller according to the plurality of modulated gate on voltages from the gate pulse modulation unit and a gate low voltage from the timing controller to generate a plurality of level shifted and modulated clock signals; and a gate driver for driving gate lines on the liquid crystal panel according to the a plurality of level shifted and modulated clock signals.
摘要翻译：本发明涉及一种用于驱动液晶显示装置的电路，其中不使用多闪烁防止信号FLK，而仅使用单个防闪烁信号FLK来减少定时控制器和电平转换器的引脚数。用于驱动液晶显示装置的电路包括具有用于显示图像的多个像素区域的液晶面板，用于产生一个防闪烁信号的定时控制器和多个时钟信号和门控制信号，以控制液晶显示装置的驱动定时栅极驱动器，门脉冲调制单元，用于逻辑地操作来自定时控制器的一个防闪烁信号和多个时钟信号，以产生多个防闪烁信号，并且根据每个的时序控制器调制栅极高电压多个防止闪烁信号产生，从而产生多个调制栅极电压; 电平移位器单元，用于根据来自门脉冲调制单元的多个调制栅极导通电压和来自定时控制器的栅极低电压，从定时控制器改变多个时钟信号，以产生多个电平移位和调制时钟信号 ; 以及用于根据多个电平移位和调制的时钟信号在液晶面板上驱动栅极线的栅极驱动器。

6. 发明授权

US07893900B2 Liquid crystal display device and method of driving the same 有权
标题翻译：液晶显示装置及其驱动方法
公开(公告)号：US07893900B2
公开(公告)日：2011-02-22
申请号：US11648356
申请日：2006-12-28
申请人： Seok-Su Kim , Sun-Young Choi
发明人： Seok-Su Kim , Sun-Young Choi
IPC分类号： G09G5/00
CPC分类号： G09G3/3614 , G09G3/3688 , G09G2320/0209
摘要： A liquid crystal display device includes a liquid crystal panel, including multiple pixels, and a driving circuit. The pixels are driven according to a first driving pattern. The driving circuit monitors the liquid crystal panel for a cross-talk condition. The driving circuit generates a signal and changes the driving pattern to an alternate driving pattern when a cross-talk condition is detected in the liquid crystal panel.
摘要翻译：液晶显示装置包括具有多个像素的液晶面板和驱动电路。像素根据第一驱动模式被驱动。驱动电路监视液晶面板的串扰状况。当在液晶面板中检测到串扰条件时，驱动电路产生信号并将驱动模式改变为备用驱动模式。

7. 发明授权

US06969655B2 Method of fabricating a semiconductor device that includes removing a residual conducting layer from a sidewall spacer corresponding to a gate electrode of a flash memory 失效
标题翻译：一种制造半导体器件的方法，包括从对应于闪速存储器的栅电极的侧壁间隔去除残留导电层
公开(公告)号：US06969655B2
公开(公告)日：2005-11-29
申请号：US10745853
申请日：2003-12-26
申请人： Seok Su Kim
发明人： Seok Su Kim
IPC分类号： H01L27/115 , H01L21/28 , H01L29/423 , H01L21/4763
CPC分类号： H01L21/28273 , H01L29/42324
摘要： Methods of fabricating semiconductor devices are disclosed. An example method may include providing a substrate including an active region and a non-active region and forming a first gate electrode comprising a dielectric layer pattern, a first conducting layer pattern, and a first insulating layer pattern, the first gate electrode functioning as a flash memory. The example method may also include forming spacers on sidewalls of the first gate electrode; forming a second gate electrode comprising a gate oxide, a second conducting layer pattern, and a second insulating layer pattern, the second gate electrode functioning as a normal gate electrode; and removing a residual conducting layer on one sidewall of the spacer.
摘要翻译：公开了制造半导体器件的方法。示例性方法可以包括提供包括有源区和非有源区的衬底，并形成包括电介质层图案，第一导电层图案和第一绝缘层图案的第一栅电极，第一栅电极用作闪存示例性方法还可以包括在第一栅电极的侧壁上形成间隔物; 形成包括栅极氧化物，第二导电层图案和第二绝缘层图案的第二栅电极，所述第二栅电极用作正常栅电极; 以及去除间隔物的一个侧壁上的残留导电层。

8. 发明授权

US06709933B2 Method of fabricating mask ROM 有权
标题翻译：掩膜ROM的制作方法
公开(公告)号：US06709933B2
公开(公告)日：2004-03-23
申请号：US10323329
申请日：2002-12-18
申请人： Seok Su Kim
发明人： Seok Su Kim
IPC分类号： H01L218246
CPC分类号： H01L27/11253 , H01L27/112
摘要： A method of fabricating a mask ROM comprising: preparing a substrate defined by a memory cell array region and a peripheral region; forming a device isolation film between the memory cell array region and the peripheral region; forming a gate-forming material layer; covering the memory cell array region and selectively etching the gate-forming material layer in the peripheral region to form a first gate; forming an insulation spacer in a lateral portion of the gate; injecting ion to the substrate in the peripheral region to form a source/drain region; forming salicide on the gate-forming material layer of the memory cell array region and the gate and in the source/drain region; covering the peripheral region and selectively etching the gate-forming material layer in the memory cell array region to form a second gate; and forming a protective film on the resultant substrate.
摘要翻译：一种制造掩模ROM的方法，包括：制备由存储单元阵列区域和外围区域限定的衬底; 在所述存储单元阵列区域和所述周边区域之间形成器件隔离膜; 形成栅极形成材料层; 覆盖存储单元阵列区域并选择性地蚀刻周边区域中的栅极形成材料层以形成第一栅极; 在所述浇口的横向部分中形成绝缘垫片; 在外围区域中将衬底注入衬底以形成源极/漏极区域; 在存储单元阵列区域和栅极和源极/漏极区域的栅极形成材料层上形成硅化物; 覆盖周边区域并选择性地蚀刻存储单元阵列区域中的栅极形成材料层以形成第二栅极; 并在所得基板上形成保护膜。

9. 发明授权

US07226838B2 Methods for fabricating a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07226838B2
公开(公告)日：2007-06-05
申请号：US10745854
申请日：2003-12-26
申请人： Seok Su Kim
发明人： Seok Su Kim
IPC分类号： H01L21/336
CPC分类号： H01L29/66825 , H01L21/28273
摘要： Methods of fabricating a semiconductor device is disclosed. An illustrated method comprises: providing a substrate including an active region and a non-active region; forming a first gate electrode including a dielectric layer pattern, a first conducting layer pattern, and an insulating layer pattern; growing a thermal oxide layer on the substrate and the first gate electrode; forming a nitride layer over the substrate and the thermal oxide layer; and removing the nitride layer and the thermal oxide layer using an etch back process to form spacers on sidewalls of the first gate electrode. By including the thermal oxide layer, the spacers ensure insulation capability.
摘要翻译：公开了制造半导体器件的方法。所示方法包括：提供包括有源区和非活性区的衬底; 形成包括电介质层图案的第一栅电极，第一导电层图案和绝缘层图案; 在衬底和第一栅电极上生长热氧化层; 在所述衬底和所述热氧化物层上形成氮化物层; 以及使用回蚀工艺去除氮化物层和热氧化物层，以在第一栅电极的侧壁上形成间隔物。通过包括热氧化物层，间隔物确保绝缘能力。

10. 发明申请

US20060019450A1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060019450A1
公开(公告)日：2006-01-26
申请号：US11186397
申请日：2005-07-21
申请人： Seok-Su Kim
发明人： Seok-Su Kim
IPC分类号： H01L21/44 , H01L21/336 , H01L21/8238
CPC分类号： H01L21/76879 , H01L21/28525 , H01L21/76802 , H01L21/76805 , H01L21/76895 , H01L21/823425
摘要： An exemplary method for manufacturing a semiconductor device includes: forming an insulating layer over a semiconductor substrate having a gate insulating layer, a gate, and a spacer, respectively formed thereabove and one or more junction regions formed therein so as to fill a full height of a gap between gates; forming a contact hole partially exposing the junction region(s) by etching the Insulating layer; and selectively forming a silicon layer on an exposed portion of the junction region at a bottom of the contact hole.
摘要翻译：用于制造半导体器件的示例性方法包括：在分别形成在其上的具有栅极绝缘层，栅极和间隔物的半导体衬底上形成绝缘层，以及形成在其中的一个或多个结区域，以便填满全部高度门之间的差距通过蚀刻绝缘层形成部分地暴露接合区域的接触孔; 并且在接触孔的底部的接合区域的暴露部分上选择性地形成硅层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式