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1. 发明授权

US09169557B2 Process for producing oxide films 有权
标题翻译：氧化膜的制造方法
公开(公告)号：US09169557B2
公开(公告)日：2015-10-27
申请号：US12777022
申请日：2010-05-10
申请人： Timo Hatanpaa , Marko Vehkamaki , Mikko Ritala , Markku Leskela
发明人： Timo Hatanpaa , Marko Vehkamaki , Mikko Ritala , Markku Leskela
IPC分类号： C23C16/455 , C23C16/40 , H01G4/10 , H01L21/314 , H01L21/316 , H01L49/02
CPC分类号： H01L21/02194 , C23C16/40 , C23C16/45525 , C23C16/45553 , H01G4/10 , H01L21/0228 , H01L21/02318 , H01L21/3141 , H01L21/31691 , H01L28/55
摘要： Processes are provided for producing bismuth-containing oxide thin films by atomic layer deposition. In preferred embodiments an organic bismuth compound having at least one monodentate alkoxide ligand is used as a bismuth source material. Bismuth-containing oxide thin films can be used, for example, as ferroelectric or dielectric materials in integrated circuits and as superconductor materials.
摘要翻译：提供了通过原子层沉积生产含铋氧化物薄膜的方法。在优选的实施方案中，使用具有至少一个单齿醇盐配体的有机铋化合物作为铋源材料。含铋氧化物薄膜可以用作例如集成电路中的铁电或电介质材料，也可用作超导材料。

2. 发明申请

US20150221479A1 RPS ASSISTED RF PLASMA SOURCE FOR SEMICONDUCTOR PROCESSING 有权
标题翻译： RPS辅助RF等离子体源用于半导体处理
公开(公告)号：US20150221479A1
公开(公告)日：2015-08-06
申请号：US14603638
申请日：2015-01-23
申请人： Applied Materials, Inc.
发明人： Xinglong CHEN , Saurabh GARG , Jang-Gyoo YANG
IPC分类号： H01J37/32 , C23C16/455 , C23C16/44 , C23C16/505
CPC分类号： H01J37/32422 , C23C16/452 , C23C16/455 , C23C16/45565 , C23C16/505 , C23C16/517 , H01J37/32357 , H01J37/3244 , H01J37/32449 , H01J37/32495 , H01J2237/3321 , H01J2237/334 , H01L21/00 , H01L21/02164 , H01L21/02274 , H01L21/3065 , H01L21/31116 , H01L21/31691 , H01L21/67017 , H01L21/67069 , H01L22/26 , H01L27/11502 , H01L28/55 , H01L43/12
摘要： Embodiments of the disclosure generally relate to a hybrid plasma processing system incorporating a remote plasma source (RPS) unit with a capacitively coupled plasma (CCP) unit for substrate processing. In one embodiment, the hybrid plasma processing system includes a CCP unit, comprising a lid having one or more through holes, and an ion suppression element, wherein the lid and the ion suppression element define a plasma excitation region, a RPS unit coupled to the CCP unit, and a gas distribution plate disposed between the ion suppression element and a substrate support, wherein the gas distribution plate and the substrate support defines a substrate processing region. In cases where process requires higher power, both CCP and RPS units may be used to generate plasma excited species so that some power burden is shifted from the CCP unit to the RPS unit, which allows the CCP unit to operate at lower power.
摘要翻译：本公开的实施例一般涉及一种混合等离子体处理系统，其包括具有用于衬底处理的电容耦合等离子体（CCP）单元的远程等离子体源（RPS）单元。在一个实施例中，混合等离子体处理系统包括CCP单元，其包括具有一个或多个通孔的盖子和离子抑制元件，其中盖子和离子抑制元件限定等离子体激发区域，RPS单元耦合到 CCP单元和设置在离子抑制元件和基板支撑件之间的气体分配板，其中气体分配板和基板支撑件限定基板处理区域。在过程需要更高功率的情况下，CCP和RPS单元都可用于产生等离子体激发的物质，以使一些功率负载从CCP单元转移到RPS单元，这允许CCP单元以较低的功率工作。

3. 发明授权

US08859051B2 Composition for ferroelectric thin film formation, method for forming ferroelectric thin film and ferroelectric thin film formed by the method thereof 有权
标题翻译：用于铁电薄膜形成的组合物，形成铁电薄膜的方法和通过该方法形成的铁电薄膜
公开(公告)号：US08859051B2
公开(公告)日：2014-10-14
申请号：US12736944
申请日：2009-05-28
申请人： Jun Fujii , Hideaki Sakurai , Takashi Noguchi , Nobuyuki Soyama
发明人： Jun Fujii , Hideaki Sakurai , Takashi Noguchi , Nobuyuki Soyama
IPC分类号： B05D3/02 , H01B3/14 , C04B24/40 , C04B24/42 , C04B35/624 , H01L41/18 , B05D3/04 , C01G25/00 , C23C18/12 , H01G4/12 , H01G4/20 , H01L21/02 , H01L21/316 , H01L41/318 , C04B35/491 , C04B35/493 , C04B35/632 , C04B111/92 , H01L27/115 , H01L49/02
CPC分类号： H01L41/1876 , B05D3/02 , B05D3/0209 , B05D3/04 , B05D3/0406 , B05D3/0413 , B05D3/0453 , B05D3/0473 , C01G25/006 , C01P2002/50 , C01P2006/40 , C04B24/40 , C04B24/42 , C04B35/491 , C04B35/493 , C04B35/624 , C04B35/632 , C04B35/6325 , C04B2111/92 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3232 , C04B2235/3293 , C04B2235/3298 , C04B2235/3418 , C04B2235/44 , C04B2235/441 , C04B2235/443 , C04B2235/447 , C04B2235/449 , C04B2235/6585 , C23C18/1204 , C23C18/1225 , C23C18/1279 , C23C30/00 , H01B3/14 , H01G4/1245 , H01G4/206 , H01L21/02197 , H01L21/02282 , H01L21/31691 , H01L27/108 , H01L27/11502 , H01L28/55 , H01L41/18 , H01L41/1875 , H01L41/318
摘要： Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (PbxLay)(ZrzTi(1-z))O3 [wherein 0.9
摘要翻译：公开了用于形成选自PLZT，PZT和PT的一种材料的铁电薄膜的铁电薄膜形成用组合物。铁电薄膜形成用组合物是由通式（1）表示的复合金属氧化物（A）：（PbxLay）（ZrzTi（Zr x Ti y））的混合物形成的混合复合金属氧化物的薄膜的液体组合物， 1）表示的复合氧化物（B）或羧酸（B），通式（2）表示的化合物（其中0.9

4. 发明授权

US08679913B2 Method for Sr—Ti—O-based film formation 失效
标题翻译： Sr-Ti-O基成膜方法
公开(公告)号：US08679913B2
公开(公告)日：2014-03-25
申请号：US12676237
申请日：2008-09-02
申请人： Yumiko Kawano , Susumu Arima , Akinobu Kakimoto , Toshiyuki Hirota , Takakazu Kiyomura
发明人： Yumiko Kawano , Susumu Arima , Akinobu Kakimoto , Toshiyuki Hirota , Takakazu Kiyomura
IPC分类号： H01L21/8242 , H01L21/31 , H01L21/469 , H01L21/02 , H01L21/316
CPC分类号： H01L21/0228 , C23C16/409 , C23C16/45531 , H01L21/02197 , H01L21/31604 , H01L21/31691 , H01L21/67115 , H01L21/68742 , H01L28/55
摘要： A film is formed so that the atomic numbers ratio of Sr to Ti, i.e., Sr/Ti, in the film is not less than 1.2 and not more than 3. The film is then annealed in an atmosphere containing not less than 0.001% and not more than 80% of O2 at 500° C. or above. An SrO film forming step or a TiO film forming step are repeated a plurality of times so that a sequence, in which a plurality of SrO film forming steps or/and a plurality of TiO film forming steps are performed continuously, is included. When Sr is oxidized after the adsorption of Sr, O3 and H2O are used as an oxidizing agent.
摘要翻译：形成膜，使得膜中的Sr与Ti的原子数比（即Sr / Ti）不小于1.2且不大于3.然后将膜在包含不低于0.001％的气氛中退火，在500℃以上不超过80％的O 2。重复多次SrO膜形成步骤或TiO膜形成步骤，使得连续进行多个SrO膜形成步骤或/和多个TiO膜形成步骤的顺序被包括在内。在Sr吸附后Sr被氧化时，O3和H2O用作氧化剂。

5. 发明授权

US08557697B2 Vapor deposition methods for forming a metal-containing layer on a substrate 有权
标题翻译：在基板上形成含金属层的气相沉积方法
公开(公告)号：US08557697B2
公开(公告)日：2013-10-15
申请号：US12893807
申请日：2010-09-29
申请人： Bhaskar Srinivasan , John Smythe
发明人： Bhaskar Srinivasan , John Smythe
IPC分类号： H01L21/4763
CPC分类号： C23C16/405 , C23C16/409 , C23C16/45529 , C23C16/45531 , H01G4/085 , H01G4/1227 , H01L21/02186 , H01L21/022 , H01L21/0228 , H01L21/3141 , H01L21/31604 , H01L21/31691
摘要： Atomic layer deposition methods as described herein can be advantageously used to form a metal-containing layer on a substrate. For example, certain methods as described herein can form a strontium titanate layer that has low carbon content (e.g., low strontium carbonate content), which can result in layer with a high dielectric constant.
摘要翻译：本文所述的原子层沉积方法可有利地用于在基底上形成含金属的层。例如，如本文所述的某些方法可以形成具有低碳含量（例如低碳酸锶含量）的钛酸锶层，其可导致具有高介电常数的层。

6. 发明申请

US20130252436A1 DIELECTRIC THIN FILM, METHOD OF MANUFACTURING SAME, AND APPLICATIONS THEREOF 审中-公开
标题翻译：电介质薄膜，其制造方法及其应用
公开(公告)号：US20130252436A1
公开(公告)日：2013-09-26
申请号：US13899927
申请日：2013-05-22
申请人： MITSUBISHI MATERIALS CORPORATION
发明人： Jun Fujii , Hideaki Sakurai , Nobuyuki Soyama
IPC分类号： H01L21/02
CPC分类号： H01L21/02197 , C04B35/4682 , C04B2235/3213 , C04B2235/6562 , C04B2235/785 , C04B2235/79 , C23C18/1216 , H01G4/1227 , H01G4/33 , H01L21/02282 , H01L21/31691 , H01L28/55 , H01L41/1871 , H01L41/317 , Y10T428/268
摘要： A dielectric thin film and a method of manufacturing the same, wherein the manufacture of a dielectric thin film having a composition represented by Ba1-xSrxTiyO3 (wherein 0≦x≦1 and 0.9≦y≦1.1) includes applying a precursor to the thin film to a substrate and performing drying, and subsequently performing calcination by raising the temperature of the dried thin film at a rate of not more than 30° C./minute, thereby forming a dielectric thin film having an average primary particle size of not less than 70 nm, for which no cracks with a continuous linear length of 1.5 μm or greater exist at the surface of the thin film.
摘要翻译：一种电介质薄膜及其制造方法，其中具有由Ba1-xSrxTiyO3（其中0≤x≤1和0.9 @ y1.1）表示的组成的电介质薄膜的制造包括将前体施加到薄膜并进行干燥，然后以不高于30℃/分钟的速度升高干燥后的薄膜的温度进行煅烧，由此形成平均一次粒径不小于 70nm，在薄膜的表面不存在连续线性长度为1.5μm以上的裂纹。

7. 发明申请

US20130122609A1 Zr-SUBSTITUTED BaTiO3 FILMS 有权
标题翻译： Zr取代的BaTiO3膜
公开(公告)号：US20130122609A1
公开(公告)日：2013-05-16
申请号：US13692407
申请日：2012-12-03
申请人： Micron Technology, Inc.
发明人： Kie Y. Ahn , Leonard Forbes
IPC分类号： H01L43/12
CPC分类号： H01L21/02197 , C23C16/409 , C23C16/45529 , C23C16/45531 , H01L21/022 , H01L21/0228 , H01L21/02337 , H01L21/28194 , H01L21/28291 , H01L21/3142 , H01L21/31691 , H01L29/513 , H01L29/516 , H01L29/517 , H01L29/78 , H01L43/12 , H04L12/4625 , H04L45/02
摘要： The use of a monolayer or partial monolayer sequencing process, such as atomic layer deposition (ALD), to form a zirconium substituted layer of barium titanium oxide, produces a reliable ferroelectric structure for use in a variety of electronic devices such as a dielectric in nonvolatile random access memories (NVRAM), tunable dielectrics for multi layer ceramic capacitors (MLCC), infrared sensors and electro-optic modulators. In various embodiments, structures can be formed by depositing alternating layers of barium titanate and barium zirconate by ALD on a substrate surface using precursor chemicals, and repeating to form a sequentially deposited interleaved structure of desired thickness and composition. The properties of the dielectric may be tuned by adjusting the percentage of zirconium to titanium to optimize properties such as a dielectric constant, Curie point, film polarization, ferroelectric property and a desired relaxor response.
摘要翻译：使用单层或部分单层测序方法（例如原子层沉积（ALD））来形成锆钛氧化物的锆取代层，产生可靠的铁电结构，用于各种电子器件，例如非易失性介质随机存取存储器（NVRAM），多层陶瓷电容器（MLCC）的可调电介质，红外传感器和电光调制器。在各种实施方案中，可以通过使用前体化学品在基材表面上沉积钛酸钡和锆酸钡的交替层而形成结构，并重复形成所需厚度和组成的顺序沉积的交错结构。电介质的性质可以通过调整锆与钛的百分比来调节，以优化诸如介电常数，居里点，薄膜极化，铁电性能和期望的弛豫反应的性能。

8. 发明授权

US08277896B2 Thin film dielectrics with perovskite structure and preparation thereof 失效
标题翻译：具有钙钛矿结构的薄膜电介质及其制备方法
公开(公告)号：US08277896B2
公开(公告)日：2012-10-02
申请号：US11847446
申请日：2007-08-30
申请人： Robert D. Mariani , John W. Koenitzer
发明人： Robert D. Mariani , John W. Koenitzer
IPC分类号： B05D3/02
CPC分类号： C01G1/02 , C01G33/006 , C01G35/006 , C01P2002/34 , C01P2004/61 , C01P2004/80 , C01P2006/32 , C01P2006/40 , H01G4/1254 , H01L21/31691
摘要： Methods of making a ternary oxide and a perovskite-related ternary oxide structure are described. The methods include reacting a binary oxide with a metal oxide or a metal hydroxide to form a ternary oxide dielectric layer on a substrate. Powders, anodes, pressed articles, and capacitors including the ternary oxide or perovskite-related ternary oxide structure as a dielectric layer or other layers are further described.
摘要翻译：描述了制备三元氧化物和钙钛矿相关三元氧化物结构的方法。所述方法包括使二元氧化物与金属氧化物或金属氢氧化物反应以在基底上形成三元氧化物介电层。还描述了包括三元氧化物或钙钛矿相关三元氧化物结构的粉末，阳极，压制品和电容器作为电介质层或其它层。

9. 发明授权

US08193083B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US08193083B2
公开(公告)日：2012-06-05
申请号：US12230782
申请日：2008-09-04
申请人： Sadayoshi Horii , Yoshinori Imai , Mika Karasawa
发明人： Sadayoshi Horii , Yoshinori Imai , Mika Karasawa
IPC分类号： H01L21/44
CPC分类号： C23C16/0281 , C23C16/409 , H01L21/3141 , H01L21/31691 , H01L28/55
摘要： A method of manufacturing a semiconductor device of the present invention includes a first step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium, on a substrate having a metal thin film formed on the surface, at a first temperature allowing no oxidization of the metal thin film to occur, and allowing the metal oxide film to be set in an amorphous state; and a second step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium on the metal oxide film formed in the first step, up to a target film thickness, at a second temperature exceeding the first temperature.
摘要翻译：本发明的半导体装置的制造方法包括：形成含有选自铪，钇，镧，铝，锆，锶，钛等的至少一种以上的元素的金属氧化物膜的第一工序，钡，钽，铌，在表面形成有金属薄膜的基板上，在不会发生金属薄膜氧化的第一温度下，将金属氧化物膜设定为非晶态; 以及在形成的金属氧化物膜上形成含有选自铪，钇，镧，铝，锆，锶，钛，钡，钽，铌中的至少一种以上的元素的金属氧化物膜的第二工序在第一步骤中，在超过第一温度的第二温度下达到目标膜厚度。

10. 发明授权

US08184426B2 Dielectric element and method for producing the dielectric element 有权
标题翻译：电介质元件及其制造方法
公开(公告)号：US08184426B2
公开(公告)日：2012-05-22
申请号：US12448528
申请日：2007-12-20
申请人： Minoru Osada , Yasuo Ebina , Takayoshi Sasaki
发明人： Minoru Osada , Yasuo Ebina , Takayoshi Sasaki
IPC分类号： H01G4/06
CPC分类号： H01L27/10873 , C04B35/016 , C04B35/462 , C04B35/495 , C04B2235/3201 , C04B2235/3203 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3251 , C04B2235/3262 , C04B2235/3281 , C04B2235/3284 , C04B2235/3296 , C04B2235/764 , H01G4/1209 , H01G4/33 , H01L21/31691 , H01L27/1085 , H01L28/55 , H01L29/513 , H01L29/517 , Y10T156/10
摘要： Provided is a dielectric element comprising a dielectric thin film formed of a layer of perovskite nanosheets. The dielectric element has the advantages of inherent properties and high-level texture and structure controllability of the perovskite nanosheets, therefore realizing both a high dielectric constant and good insulating properties in a nano-region.
摘要翻译：提供一种电介质元件，其包括由钙钛矿纳米片层形成的电介质薄膜。电介质元件具有钙钛矿纳米片的固有性质和高水平织构和结构可控性的优点，因此在纳米区域既实现了高介电常数又具有良好的绝缘性能。

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