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1. 发明授权

US07358793B2 Semiconductor integrated circuit apparatus 有权
公开(公告)号：US07358793B2
公开(公告)日：2008-04-15
申请号：US11349092
申请日：2006-02-08
申请人： Masaya Sumita , Shirou Sakiyama , Masayoshi Kinoshita
发明人： Masaya Sumita , Shirou Sakiyama , Masayoshi Kinoshita
IPC分类号： H03K3/01
CPC分类号： H03K3/011 , G05F3/205 , H03K17/145 , H03K19/00384 , H03K2217/0018
摘要： Providing semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation.The semiconductor integrated circuit apparatus includes: an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current. The monitor unit includes a constant current source and a monitoring MOSFET formed on the same substrate as the plurality of MOSFETs, the substrate voltage regulating unit includes a comparison unit for comparing the source potential of the monitoring MOSFET with a predetermined reference potential with the drain terminal of the monitoring MOSFET and the drain terminals of the plurality of MOSFETs connected to the ground potential, and substrate voltage regulating unit feeds back the output voltage output based on the comparison result by the comparison unit to the substrate voltage of the monitoring MOSFET.

2. 发明申请

US20070132504A1 Semiconductor integrated circuit apparatus 有权
公开(公告)号：US20070132504A1
公开(公告)日：2007-06-14
申请号：US11702132
申请日：2007-02-05
申请人： Masaya Sumita , Shirou Sakiyama , Masayoshi Kinoshita
发明人： Masaya Sumita , Shirou Sakiyama , Masayoshi Kinoshita
IPC分类号： H03K3/01
CPC分类号： H03K3/011 , G05F3/205 , H03K17/145 , H03K19/00384 , H03K2217/0018
摘要： Providing semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation. The semiconductor integrated circuit apparatus includes: an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current. The monitor unit includes a constant current source and a monitoring MOSFET formed on the same substrate as the plurality of MOSFETs, the substrate voltage regulating unit includes a comparison unit for comparing the source potential of the monitoring MOSFET with a predetermined reference potential with the drain terminal of the monitoring MOSFET and the drain terminals of the plurality of MOSFETs connected to the ground potential, and substrate voltage regulating unit feeds back the output voltage output based on the comparison result by the comparison unit to the substrate voltage of the monitoring MOSFET.

3. 发明授权

US06684378B2 Method for designing power supply circuit and semiconductor chip 有权
标题翻译：设计电源电路和半导体芯片的方法
公开(公告)号：US06684378B2
公开(公告)日：2004-01-27
申请号：US10012731
申请日：2001-11-05
申请人： Akira Yamamoto , Shirou Sakiyama , Hiroyuki Nakahira , Masayoshi Kinoshita , Katsuji Satomi , Jun Kajiwara , Shinichi Yamamoto
发明人： Akira Yamamoto , Shirou Sakiyama , Hiroyuki Nakahira , Masayoshi Kinoshita , Katsuji Satomi , Jun Kajiwara , Shinichi Yamamoto
IPC分类号： G06F1750
CPC分类号： G06F17/50 , G06F2217/78 , H01L27/088 , H01L27/11807 , H01L2224/05554 , H01L2224/49171 , H02M3/1588 , H02M7/003 , Y02B70/1466
摘要： A power supply circuit according to the present invention is a power supply circuit formed on a semiconductor chip, including: an output transistor section outputting a power supply voltage; and a control circuit for controlling the output transistor section. The output transistor section is arranged in the vicinity of an external input/output terminal of the semiconductor chip.
摘要翻译：根据本发明的电源电路是形成在半导体芯片上的电源电路，包括：输出电源电压的输出晶体管部分; 以及用于控制输出晶体管部分的控制电路。输出晶体管部分布置在半导体芯片的外部输入/输出端子附近。

4. 发明申请

US20080088357A1 Semiconductor integrated circuit apparatus 有权
公开(公告)号：US20080088357A1
公开(公告)日：2008-04-17
申请号：US11987709
申请日：2007-12-04
申请人： Masaya Sumita , Shirou Sakiyama , Masayoshi Kinoshita
发明人： Masaya Sumita , Shirou Sakiyama , Masayoshi Kinoshita
IPC分类号： H03K3/01
CPC分类号： H03K3/011 , G05F3/205 , H03K17/145 , H03K19/00384 , H03K2217/0018
摘要： Providing semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation. The semiconductor integrated circuit apparatus includes: an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current. The monitor unit includes a constant current source and a monitoring MOSFET formed on the same substrate as the plurality of MOSFETs, the substrate voltage regulating unit includes a comparison unit for comparing the source potential of the monitoring MOSFET with a predetermined reference potential with the drain terminal of the monitoring MOSFET and the drain terminals of the plurality of MOSFETs connected to the ground potential, and substrate voltage regulating unit feeds back the output voltage output based on the comparison result by the comparison unit to the substrate voltage of the monitoring MOSFET.

5. 发明授权

US07138851B2 Semiconductor integrated circuit apparatus 有权
标题翻译：半导体集成电路装置
公开(公告)号：US07138851B2
公开(公告)日：2006-11-21
申请号：US10689554
申请日：2003-10-21
申请人： Masaya Sumita , Shirou Sakiyama , Masayoshi Kinoshita
发明人： Masaya Sumita , Shirou Sakiyama , Masayoshi Kinoshita
IPC分类号： H03K3/01
CPC分类号： H03K3/011 , G05F3/205 , H03K17/145 , H03K19/00384 , H03K2217/0018
摘要： Providing semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation.
摘要翻译：提供能够控制MOSFET的衬底电压的半导体集成电路装置，使得亚阈值区域或饱和区域中的任意栅极电压值的漏极电流将不受温度依赖性和工艺变化依赖性的影响，从而提高了稳定的工作。

6. 发明授权

US06460168B1 Method of designing power supply circuit and semiconductor chip 有权
标题翻译：设计电源电路和半导体芯片的方法
公开(公告)号：US06460168B1
公开(公告)日：2002-10-01
申请号：US09446722
申请日：2000-03-27
申请人： Akira Yamamoto , Shirou Sakiyama , Hiroyuki Nakahira , Masayoshi Kinoshita , Katsuji Satomi , Jun Kajiwara , Shinichi Yamamoto
发明人： Akira Yamamoto , Shirou Sakiyama , Hiroyuki Nakahira , Masayoshi Kinoshita , Katsuji Satomi , Jun Kajiwara , Shinichi Yamamoto
IPC分类号： G06F1750
CPC分类号： G06F17/50 , G06F2217/78 , H01L27/088 , H01L27/11807 , H01L2224/05554 , H01L2224/49171 , H02M3/1588 , H02M7/003 , Y02B70/1466
摘要： A power supply circuit according to the present invention is a power supply circuit formed on a semiconductor chip, including: an output transistor section outputting a power supply voltage; and a control circuit for controlling the output transistor section. The output transistor section is arranged in the vicinity of an external input/output terminal of the semiconductor chip.
摘要翻译：根据本发明的电源电路是形成在半导体芯片上的电源电路，包括：输出电源电压的输出晶体管部分; 以及用于控制输出晶体管部分的控制电路。输出晶体管部分布置在半导体芯片的外部输入/输出端子附近。

7. 发明授权

US07999603B2 Semiconductor integrated circuit apparatus which is capable of controlling a substrate voltage under the low source voltage driving of a miniaturized MOSFET 有权
标题翻译：半导体集成电路装置，其能够在小型化的MOSFET的低电源电压驱动下控制衬底电压
公开(公告)号：US07999603B2
公开(公告)日：2011-08-16
申请号：US12686283
申请日：2010-01-12
申请人： Masaya Sumita , Shirou Sakiyama , Masayoshi Kinoshita
发明人： Masaya Sumita , Shirou Sakiyama , Masayoshi Kinoshita
IPC分类号： H03K3/01
CPC分类号： H03K3/011 , G05F3/205 , H03K17/145 , H03K19/00384 , H03K2217/0018
摘要： Provided is a semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation thereof. The semiconductor integrated circuit apparatus includes: an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current. The monitor unit includes a constant current source and a monitoring MOSFET formed on the same substrate as the plurality of MOSFETs, the substrate voltage regulating unit includes a comparison unit for comparing the source potential of the monitoring MOSFET with a predetermined reference potential with the drain terminal of the monitoring MOSFET and the drain terminals of the plurality of MOSFETs connected to ground, and the substrate voltage regulating unit feeds back the output voltage output based on the comparison result by the comparison unit to the substrate voltage of the monitoring MOSFET.
摘要翻译：提供一种半导体集成电路装置，其能够控制MOSFET的衬底电压，使得亚阈值区域或饱和区域中的任意栅极电压值的漏极电流将不受温度依赖性和工艺变化依赖性的影响，从而提高稳定性操作。半导体集成电路装置包括：在半导体基板上具有多个MOSFET的集成电路主体; 监视器单元，用于监视所述多个MOSFET的至少一个漏极电流; 以及用于控制半导体衬底的衬底电压以保持漏极电流恒定的衬底电压调节单元。监视器单元包括形成在与多个MOSFET相同的衬底上的恒流源和监视MOSFET，衬底电压调节单元包括比较单元，用于将监视MOSFET的源极电位与预定参考电位进行比较，漏极端子的监视MOSFET和连接到地的多个MOSFET的漏极端子，并且基板电压调节单元基于比较单元的比较结果将监视MOSFET的衬底电压的输出电压输出反馈。

8. 发明授权

US07429887B2 Semiconductor integrated circuit apparatus 有权
标题翻译：半导体集成电路装置
公开(公告)号：US07429887B2
公开(公告)日：2008-09-30
申请号：US11540692
申请日：2006-10-02
申请人： Masaya Sumita , Shirou Sakiyama , Masayoshi Kinoshita
发明人： Masaya Sumita , Shirou Sakiyama , Masayoshi Kinoshita
IPC分类号： H03K3/01
CPC分类号： H03K3/011 , G05F3/205 , H03K17/145 , H03K19/00384 , H03K2217/0018
摘要： Providing semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation. The semiconductor integrated circuit apparatus includes: an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current. The monitor unit includes a constant current source and a monitoring MOSFET formed on the same substrate as the plurality of MOSFETs, the substrate voltage regulating unit includes a comparison unit for comparing the source potential of the monitoring MOSFET with a predetermined reference potential with the drain terminal of the monitoring MOSFET and the drain terminals of the plurality of MOSFETs connected to the ground potential, and substrate voltage regulating unit feeds back the output voltage output based on the comparison result by the comparison unit to the substrate voltage of the monitoring MOSFET.
摘要翻译：提供能够控制MOSFET的衬底电压的半导体集成电路装置，使得亚阈值区域或饱和区域中的任意栅极电压值的漏极电流将不受温度依赖性和工艺变化依赖性的影响，从而提高了稳定的工作。半导体集成电路装置包括：在半导体基板上具有多个MOSFET的集成电路主体; 监视器单元，用于监视所述多个MOSFET的至少一个漏极电流; 以及用于控制半导体衬底的衬底电压以保持漏极电流恒定的衬底电压调节单元。监视器单元包括形成在与多个MOSFET相同的衬底上的恒流源和监视MOSFET，衬底电压调节单元包括比较单元，用于将监视MOSFET的源极电位与预定参考电位进行比较，漏极端子的监视MOSFET和连接到地电位的多个MOSFET的漏极端子，并且基板电压调节单元基于比较单元的比较结果将监控MOSFET的基板电压反馈输出电压输出。

9. 发明授权

US07365590B2 Semiconductor integrated circuit apparatus 有权
标题翻译：半导体集成电路装置
公开(公告)号：US07365590B2
公开(公告)日：2008-04-29
申请号：US11540757
申请日：2006-10-02
申请人： Masaya Sumita , Shirou Sakiyama , Masayoshi Kinoshita
发明人： Masaya Sumita , Shirou Sakiyama , Masayoshi Kinoshita
IPC分类号： H03K3/01
CPC分类号： H03K3/011 , G05F3/205 , H03K17/145 , H03K19/00384 , H03K2217/0018
摘要： A semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so hat the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation. The semiconductor integrated circuit apparatus includes an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current. The monitor unit includes a constant current source and a monitoring MOSFET formed on the same substrate as the plurality of MOSFETs, the substrate voltage regulating unit includes a comparison unit for comparing the source potential of the monitoring MOSFET with a predetermined reference potential with the drain terminal of the monitoring MOSFET and the drain terminals of the plurality of MOSFETs connected to the ground potential, and the substrate voltage regulating unit feeds back the output voltage output based on the comparison result by the comparison unit to the substrate voltage of the monitoring MOSFET.
摘要翻译：能够控制MOSFET的衬底电压的半导体集成电路装置，以使得在亚阈值区域或饱和区域中的任意栅极电压值的漏极电流不受温度依赖性和工艺变化依赖性的影响，从而提高了稳定的工作。半导体集成电路装置包括在半导体基板上具有多个MOSFET的集成电路主体; 监视器单元，用于监视所述多个MOSFET的至少一个漏极电流; 以及用于控制半导体衬底的衬底电压以保持漏极电流恒定的衬底电压调节单元。监视器单元包括形成在与多个MOSFET相同的衬底上的恒流源和监视MOSFET，衬底电压调节单元包括比较单元，用于将监视MOSFET的源极电位与预定参考电位进行比较，漏极端子的监视MOSFET和连接到地电位的多个MOSFET的漏极端子，并且基板电压调节单元基于比较单元的比较结果将监视MOSFET的衬底电压反馈输出电压输出。

10. 发明申请

US20070024342A1 Semiconductor integrated circuit apparatus 审中-公开
公开(公告)号：US20070024342A1
公开(公告)日：2007-02-01
申请号：US11540582
申请日：2006-10-02
申请人： Masaya Sumita , Shirou Sakiyama , Masayoshi Kinoshita
发明人： Masaya Sumita , Shirou Sakiyama , Masayoshi Kinoshita
IPC分类号： H03K3/01
CPC分类号： H03K3/011 , G05F3/205 , H03K17/145 , H03K19/00384 , H03K2217/0018
摘要： Providing semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation. The semiconductor integrated circuit apparatus includes: an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current. The monitor unit includes a constant current source and a monitoring MOSFET formed on the same substrate as the plurality of MOSFETs, the substrate voltage regulating unit includes a comparison unit for comparing the source potential of the monitoring MOSFET with a predetermined reference potential with the drain terminal of the monitoring MOSFET and the drain terminals of the plurality of MOSFETs connected to the ground potential, and substrate voltage regulating unit feeds back the output voltage output based on the comparison result by the comparison unit to the substrate voltage of the monitoring MOSFET.

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