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1. 发明授权

US08350270B2 Silicon carbide semiconductor device and method for manufacturing the same 有权
标题翻译：碳化硅半导体器件及其制造方法
公开(公告)号：US08350270B2
公开(公告)日：2013-01-08
申请号：US12921250
申请日：2009-03-04
申请人： Shoyu Watanabe , Shuhei Nakata , Kenichi Ohtsuka
发明人： Shoyu Watanabe , Shuhei Nakata , Kenichi Ohtsuka
IPC分类号： H01L29/161
CPC分类号： H01L29/7802 , H01L21/047 , H01L29/0642 , H01L29/0878 , H01L29/1608 , H01L29/32 , H01L29/66068
摘要： A silicon carbide MOSFET that exhibits a high source-to-drain withstand voltage and that involves a smaller difference between gate-to-drain capacitance achieved in an activated state and gate-to-drain capacitance achieved in a deactivated state. A silicon carbide drift layer of a first conductivity type is provided on a silicon carbide substrate of a first conductivity type; a pair of base regions are provided in a surface layer portion of the silicon carbide drift layer and exhibit a second conductivity type; a pair of source regions are provided in interiors of surface layer portions of the pair of base regions and exhibit a first conductivity type; and semi-insulating regions are provided between the silicon carbide substrate and the pair of base regions.
摘要翻译：表现出高的源极 - 漏极耐受电压并且在激活状态下实现的栅 - 漏电容与在去激活状态下实现的栅 - 漏电容之间的较小差异的碳化硅MOSFET。在第一导电类型的碳化硅衬底上提供第一导电类型的碳化硅漂移层; 在碳化硅漂移层的表层部分设置一对基区，呈现第二导电型; 一对源极区域设置在一对基极区域的表层部分的内部并呈现出第一导电类型; 并且在碳化硅衬底和一对基极区之间设置半绝缘区域。

2. 发明授权

US5239433A Magnetic head device 失效
标题翻译：磁头设备
公开(公告)号：US5239433A
公开(公告)日：1993-08-24
申请号：US716894
申请日：1991-06-18
申请人： Shoyu Watanabe
发明人： Shoyu Watanabe
IPC分类号： G11B5/265 , G11B5/012 , G11B5/02 , G11B5/09 , G11B5/48 , G11B19/04
CPC分类号： G11B19/04 , G11B5/012 , G11B5/4886
摘要： A magnetic head apparatus arranged such that, for preventing a crosstalk between a plurality of magnetic heads, a crosstalk preventing element is coupled through a switching element in parallel to an erasing coil of each of the magnetic heads and a control section selectively energizes and deenergizes the switching element. This arrangement allows prevention of the crosstalk to the magnetic heads.
摘要翻译：一种磁头装置，其布置成使得为了防止多个磁头之间的串扰，串扰防止元件通过与每个磁头的擦除线圈并联的开关元件耦合，并且控制部分选择性地激励和断电开关元件这种布置允许防止与磁头的串扰。

3. 发明授权

US08492836B2 Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：US08492836B2
公开(公告)日：2013-07-23
申请号：US13500659
申请日：2009-10-14
申请人： Naruhisa Miura , Shuhei Nakata , Kenichi Ohtsuka , Shoyu Watanabe , Shiro Hino , Akihiko Furukawa
发明人： Naruhisa Miura , Shuhei Nakata , Kenichi Ohtsuka , Shoyu Watanabe , Shiro Hino , Akihiko Furukawa
IPC分类号： H01L29/66
CPC分类号： H01L29/7811 , H01L29/0615 , H01L29/0638 , H01L29/0696 , H01L29/1095 , H01L29/1608 , H01L29/42368 , H01L29/42372 , H01L29/66068
摘要： In a semiconductor device according to the present invention, a p-type well region disposed in an outer peripheral portion of the power semiconductor device is divided into two parts, that is, an inside and an outside, and a field oxide film having a greater film thickness than the gate insulating film is provided on a well region at the outside to an inside of an inner periphery of the well region. Therefore, it is possible to prevent, in the gate insulating film, a dielectric breakdown due to the voltage generated by the flow of the displacement current in switching.
摘要翻译：在根据本发明的半导体器件中，设置在功率半导体器件的外周部分中的p型阱区被分成两部分，即内部和外部，并且具有更大的场氧化物膜膜厚比栅极绝缘膜设置在外部的阱区域到阱区的内周的内侧。因此，可以防止在栅极绝缘膜中由于切换中的位移电流的流动而产生的电压引起的电介质击穿。

4. 发明申请

US20110012133A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：硅碳化硅半导体器件及其制造方法
公开(公告)号：US20110012133A1
公开(公告)日：2011-01-20
申请号：US12921250
申请日：2009-03-04
申请人： Shoyu Watanabe , Shuhei Nakata , Kenichi Ohtsuka
发明人： Shoyu Watanabe , Shuhei Nakata , Kenichi Ohtsuka
IPC分类号： H01L29/772 , H01L21/20
CPC分类号： H01L29/7802 , H01L21/047 , H01L29/0642 , H01L29/0878 , H01L29/1608 , H01L29/32 , H01L29/66068
摘要： A silicon carbide MOSFET that exhibits a high source-to-drain withstand voltage and that involves a smaller difference between gate-to-drain capacitance achieved in an activated state and gate-to-drain capacitance achieved in a deactivated state. A silicon carbide drift layer of a first conductivity type is provided on a silicon carbide substrate of a first conductivity type; a pair of base regions are provided in a surface layer portion of the silicon carbide drift layer and exhibit a second conductivity type; a pair of source regions are provided in interiors of surface layer portions of the pair of base regions and exhibit a first conductivity type; and semi-insulating regions are provided between the silicon carbide substrate and the pair of base regions.
摘要翻译：表现出高的源极 - 漏极耐受电压并且在激活状态下实现的栅 - 漏电容与在去激活状态下实现的栅 - 漏电容之间的较小差异的碳化硅MOSFET。在第一导电类型的碳化硅衬底上提供第一导电类型的碳化硅漂移层; 在碳化硅漂移层的表层部分设置一对基区，呈现第二导电型; 一对源极区域设置在一对基极区域的表层部分的内部并呈现出第一导电类型; 并且在碳化硅衬底和一对基极区之间设置半绝缘区域。

5. 发明授权

US4602307A Compound type magnetic head 失效
标题翻译：复合型磁头
公开(公告)号：US4602307A
公开(公告)日：1986-07-22
申请号：US474340
申请日：1983-03-11
申请人： Jirou Toriu , Hiroshi Yamamoto , Shoyu Watanabe
发明人： Jirou Toriu , Hiroshi Yamamoto , Shoyu Watanabe
IPC分类号： G11B5/127 , G11B5/255
CPC分类号： G11B5/127 , G11B5/255
摘要： A compound type magnetic head comprising a main core (11) made of a magnetic material high in saturation flux density and low in inherent resistance, such as sendust or amorphous material and two auxiliary cores (12) sandwiching the main core (11) therebetween. The auxiliary cores (12) each consist of a first member made of a material high in inherent resistance such as ferrite and a second member made of a low melting point glass portion 42 formed on the front side of the first member, namely on the side abutting against the magnetic tape.
摘要翻译：一种复合型磁头，包括由高饱和磁通密度和固有电阻低的磁性材料制成的主芯（例如铁硅铝铁合金或非晶材料）以及夹在其间的主芯（11）的两个辅助芯（12）。辅助芯（12）各自由铁素体等固有电阻高的材料构成的第一构件和由形成在第一构件的前侧的低熔点玻璃部42构成的第二构件抵靠磁带。

6. 发明授权

US08860039B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08860039B2
公开(公告)日：2014-10-14
申请号：US13638970
申请日：2011-04-07
申请人： Naruhisa Miura , Shuhei Nakata , Kenichi Ohtsuka , Shoyu Watanabe , Hiroshi Watanabe
发明人： Naruhisa Miura , Shuhei Nakata , Kenichi Ohtsuka , Shoyu Watanabe , Hiroshi Watanabe
IPC分类号： H01L29/78 , H01L29/66 , H01L29/10 , H01L29/20 , H01L29/16 , H01L29/06 , H01L29/08
CPC分类号： H01L29/1608 , H01L29/0615 , H01L29/0878 , H01L29/1095 , H01L29/1602 , H01L29/2003 , H01L29/66045 , H01L29/66068 , H01L29/66712 , H01L29/781 , H01L29/7811
摘要： A semiconductor device having a low feedback capacitance and a low switching loss. The semiconductor device includes: a substrate; a drift layer formed on a surface of the semiconductor substrate; a plurality of first well regions formed on a surface of the drift layer; a source region which is an area formed on a surface of each of the first well regions and defining, as a channel region, the surface of each of the first well regions interposed between the area and the drift layer; a gate electrode formed over the channel region and the drift layer thereacross through a gate insulating film; and second well regions buried inside the drift layer below the gate electrode and formed to be individually connected to each of the first well regions adjacent to one another.
摘要翻译：具有低反馈电容和低开关损耗的半导体器件。半导体器件包括：衬底; 形成在所述半导体衬底的表面上的漂移层; 多个第一阱区，形成在所述漂移层的表面上; 源区域，其是形成在每个第一阱区域的表面上的区域，并且限定插入在该区域和漂移层之间的每个第一阱区域的沟道区域; 形成在所述沟道区域上的栅电极和穿过栅极绝缘膜的所述漂移层; 以及埋在栅电极下方的漂移层内的第二阱区，并形成为分别连接到彼此相邻的每个第一阱区。

7. 发明申请

US20130168700A1 POWER SEMICONDUCTOR DEVICE 有权
标题翻译：功率半导体器件
公开(公告)号：US20130168700A1
公开(公告)日：2013-07-04
申请号：US13806534
申请日：2010-06-24
申请人： Akihiko Furukawa , Yasuhiro Kagawa , Naruhisa Miura , Shiro Hino , Shuhei Nakata , Kenichi Ohtsuka , Shoyu Watanabe , Masayuki Imaizumi
发明人： Akihiko Furukawa , Yasuhiro Kagawa , Naruhisa Miura , Shiro Hino , Shuhei Nakata , Kenichi Ohtsuka , Shoyu Watanabe , Masayuki Imaizumi
IPC分类号： H01L29/78
CPC分类号： H01L29/78 , H01L21/0485 , H01L27/088 , H01L29/0696 , H01L29/45 , H01L29/6606 , H01L29/66068 , H01L29/7805 , H01L29/7815
摘要： In a high speed switching power semiconductor device having a sense pad, a high voltage is generated during switching operations in well regions under the sense pad due to a displacement current flowing through its flow path with a resistance, whereby the power semiconductor device sometimes breaks down by dielectric breakdown of a thin insulating film such as a gate insulating film. In a power semiconductor device according to the invention, sense-pad well contact holes are provided on well regions positioned under the sense pad and penetrate a field insulating film thicker than the gate insulating film to connect to the source pad, thereby improving reliability.
摘要翻译：在具有感测焊盘的高速开关电力半导体器件中，由于位移电流通过其流动路径而具有电阻，在感测焊盘下的阱区域的开关操作期间产生高电压，由此功率半导体器件有时会分解通过诸如栅极绝缘膜的薄绝缘膜的电介质击穿。在根据本发明的功率半导体器件中，感测焊盘井接触孔设置在位于感测焊盘下方的阱区上，并穿透比栅极绝缘膜更厚的场绝缘膜以连接到源极焊盘，从而提高可靠性。

8. 发明申请

US20130020587A1 POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：功率半导体器件及其制造方法
公开(公告)号：US20130020587A1
公开(公告)日：2013-01-24
申请号：US13639738
申请日：2011-02-08
申请人： Shiro Hino , Naruhisa Miura , Shuhei Nakata , Kenichi Ohtsuka , Shoyu Watanabe , Akihiko Furukawa , Yukiyasu Nakao , Masayuki Imaizumi
发明人： Shiro Hino , Naruhisa Miura , Shuhei Nakata , Kenichi Ohtsuka , Shoyu Watanabe , Akihiko Furukawa , Yukiyasu Nakao , Masayuki Imaizumi
IPC分类号： H01L29/161 , H01L21/336
CPC分类号： H01L29/1095 , H01L29/0615 , H01L29/0638 , H01L29/0696 , H01L29/1608 , H01L29/402 , H01L29/42372 , H01L29/66068 , H01L29/7395 , H01L29/7805 , H01L29/7811 , H01L29/8611
摘要： A semiconductor device includes a semiconductor substrate of a first conductivity type, a drift layer of the first conductivity type which is formed on a first main surface of the semiconductor substrate, a second well region of a second conductivity type which is formed to surround a cell region of the drift layer, and a source pad for electrically connecting the second well regions and a source region of the cell region through a first well contact hole provided to penetrate a gate insulating film on the second well region, a second well contact hole provided to penetrate a field insulating film on the second well region and a source contact hole.
摘要翻译：半导体器件包括第一导电类型的半导体衬底，形成在半导体衬底的第一主表面上的第一导电类型的漂移层，形成为围绕电池的第二导电类型的第二阱区域漂移层的区域和用于通过设置成穿过第二阱区域上的栅极绝缘膜设置的第一阱接触孔电连接第二阱区域和电池区域的源极区域的源极焊盘，提供第二阱接触孔以穿透第二阱区域上的场绝缘膜和源极接触孔。

9. 发明申请

US20120205669A1 POWER SEMICONDUCTOR DEVICE 有权
标题翻译：功率半导体器件
公开(公告)号：US20120205669A1
公开(公告)日：2012-08-16
申请号：US13500659
申请日：2009-10-14
申请人： Naruhisa Miura , Shuhei Nakata , Kenichi Ohtsuka , Shoyu Watanabe , Shiro Hino , Akihiko Furukawa
发明人： Naruhisa Miura , Shuhei Nakata , Kenichi Ohtsuka , Shoyu Watanabe , Shiro Hino , Akihiko Furukawa
IPC分类号： H01L29/16 , H01L21/336
CPC分类号： H01L29/7811 , H01L29/0615 , H01L29/0638 , H01L29/0696 , H01L29/1095 , H01L29/1608 , H01L29/42368 , H01L29/42372 , H01L29/66068
摘要： In a semiconductor device according to the present invention, a p-type well region disposed in an outer peripheral portion of the power semiconductor device is divided into two parts, that is, an inside and an outside, and a field oxide film having a greater film thickness than the gate insulating film is provided on a well region at the outside to an inside of an inner periphery of the well region. Therefore, it is possible to prevent, in the gate insulating film, a dielectric breakdown due to the voltage generated by the flow of the displacement current in switching.
摘要翻译：在根据本发明的半导体器件中，设置在功率半导体器件的外周部分中的p型阱区被分成两部分，即内部和外部，并且具有更大的场氧化物膜膜厚比栅极绝缘膜设置在外部的阱区域到阱区的内周的内侧。因此，可以防止在栅极绝缘膜中由于切换中的位移电流的流动而产生的电压引起的电介质击穿。

10. 发明授权

US4868351A Input pen data input tablet 失效
标题翻译：输入笔数据输入平板电脑
公开(公告)号：US4868351A
公开(公告)日：1989-09-19
申请号：US161495
申请日：1988-02-29
申请人： Shoyu Watanabe , Masaaki Nakano , Shuji Iwata , Osamu Nakajima , Yusaku Saitoh
发明人： Shoyu Watanabe , Masaaki Nakano , Shuji Iwata , Osamu Nakajima , Yusaku Saitoh
IPC分类号： G06F3/0354
CPC分类号： G06F3/03545
摘要： An input pen of data input tablet comprising a magnetic core which is positioned at the data input tablet side end of a pen case and passes a magnetic flux generated from the data input tablet, a conductive holder for holding this core, a detection coil wound around on the core, and a lead wire led out from the coil in close contact with the holder. The magnetic flux generated by the current flowing into electrodes formed in the data input tablet is detected by the detection coil, thereby detecting a position on the data input tablet. A protective tube which covers at least the detection coil and magnetic core to protect the coil and core is also provided. An annular shield case formed of metal or other conductive material and functioning as an electromagnetic and electrostatic shield near the protective tube is provided in another embodiment.
摘要翻译：一种数据输入板的输入笔，包括位于笔盒的数据输入图形输入板端的磁芯，并通过从数据输入图形输入板产生的磁通，用于保持该磁芯的导电支架，缠绕在其上的检测线圈在芯上，以及从线圈引出的引线与支架紧密接触。由流入形成在数据输入板中的电极的电流产生的磁通量由检测线圈检测，从而检测数据输入图形输入板上的位置。还提供了至少覆盖检测线圈和磁芯以保护线圈和芯的保护管。在另一个实施例中提供了由金属或其它导电材料形成并在保护管附近用作电磁和静电屏蔽的环形屏蔽壳。

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