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    • 5. 发明申请
    • Multiple bit chalcogenide storage device
    • 多位硫族化物储存装置
    • US20060118774A1
    • 2006-06-08
    • US11339869
    • 2006-01-26
    • Stanford Ovshinsky
    • Stanford Ovshinsky
    • H01L47/02
    • G11C13/0004G11C11/56G11C11/5678H01L45/06H01L45/1206H01L45/1233H01L45/1246H01L45/144
    • Multi-terminal chalcogenide memory cells having multiple binary or non-binary bit storage capacity and methods of programming same. The memory cells include a pore region containing a chalcogenide material along with three or more electrical terminals in electrical communication therewith. The configuration of terminals delineates spatially distinct regions of chalcogenide material that may be selectively and independently programmed to provide multibit storage. The application of an electrical signal (e.g. electrical current or voltage pulse) between a pair of terminals effects a structural transformation in one of the spatially distinct portions of chalcogenide material. Application of electrical signals to different pairs of terminals within a chalcogenide device effects structural transformations in different portions of the chalcogenide material. The structural states produced by the structural transformations may be used for storage of information values in a binary or non-binary (e.g. multilevel) system. The selection of terminals provides for the selective programming of specific and distinct portions within a continuous volume of chalcogenide material, where each selectively programmed portion provides for the storage of a single binary or non-binary bit. In devices having three or more terminals, two or more selectively programmable portions are present within the volume of chalcogenide material occupying the pore region and multibit storage is accordingly realized. The instant invention further includes methods of programming chalcogenide memory cells having three or more terminals directed at the storage of multiple bits of information in binary or non-binary systems.
    • 具有多个二进制或非二进制位存储容量的多端硫属化物存储单元及其编程方法。 存储单元包括含有硫族化物材料的孔区以及与其电连通的三个或更多个电端子。 端子的配置描绘了硫族化物材料的空间上不同的区域,其可以被选择性地和独立地编程以提供多位存储。 在一对端子之间施加电信号(例如电流或电压脉冲)会在硫族化物材料的空间上不同的部分之一中产生结构变换。 将电信号应用于硫族化物装置内不同的端子对会影响硫属化物材料的不同部分的结构变换。 由结构变换产生的结构状态可用于将信息值存储在二进制或非二进制(例如多级)系统中。 端子的选择提供了在硫族化物材料的连续体积内的特定和不同部分的选择性编程,其中每个有选择地编程的部分提供存储单个二进制或非二进制位。 在具有三个或更多个端子的器件中,在占据孔隙区域的硫族化物材料的体积内存在两个或更多个可选择性可编程部分,从而实现多位存储。 本发明还包括编程具有三个或更多个终端的硫属化物存储器单元的方法,所述三个或更多个终端指向在二进制或非二进制系统中存储多个位的信息。
    • 6. 发明申请
    • Steering assist mechanism
    • 转向辅助机构
    • US20060042864A1
    • 2006-03-02
    • US10925290
    • 2004-08-24
    • Stanford Ovshinsky
    • Stanford Ovshinsky
    • B60K17/344
    • B62D5/02
    • A steering assist mechanism for use in a vehicle having a steering linkage and an engine. The steering assist mechanism includes a driving unit having input and output ends. The output end being connected to the steering linkage. The steering assist mechanism also includes power take-off means adapted to connect the engine to the input end of the driving unit. The steering assist mechanism further includes an electromagnetic clutch in the driving unit between the input and output ends, and control means which are responsive to the torque exerted through the steering linkage to increase the energization of the clutch, whereby the steering linkage is driven by the power take-off means in a direction tending to reduce the torque.
    • 一种用于具有转向联动装置和发动机的车辆的转向辅助机构。 转向辅助机构包括具有输入和输出端的驱动单元。 输出端连接到转向连杆。 转向辅助机构还包括适于将发动机连接到驱动单元的输入端的动力输出装置。 转向辅助机构还包括在输入和输出端之间的驱动单元中的电磁离合器,以及响应于通过转向连杆施加的扭矩的控制装置,以增加离合器的通电,由此转向连杆由 动力输出装置意味着倾向于减小扭矩的方向。