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1. 发明授权

US07978508B2 Reduction of drift in phase-change memory via thermally-managed programming 有权
标题翻译：通过热管理编程减少相变存储器中的漂移
公开(公告)号：US07978508B2
公开(公告)日：2011-07-12
申请号：US12356236
申请日：2009-01-20
申请人： Wolodymyr Czubatyj
发明人： Wolodymyr Czubatyj
IPC分类号： G11C11/00
CPC分类号： G11C13/0035 , G11C7/04 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/0083 , G11C2013/0092
摘要： A method of programming a phase-change material. The method includes providing a transformation pulse to the phase-change material, where the transformation pulse includes a programming waveform and a conditioning waveform. The programming waveform provides sufficient energy to alter the structural state of the phase-change material. In one embodiment, the programming waveform alters the volume fractions of crystalline and amorphous phase regions within the phase-change material. The conditioning waveform provides sufficient energy to heat the phase-change material to a temperature above the ambient temperature but below the crystallization temperature of the phase-change material. The method programs the phase-change material to a state that exhibits a reduced time variation of resistance.
摘要翻译：编程相变材料的方法。该方法包括向相变材料提供变换脉冲，其中变换脉冲包括编程波形和调节波形。编程波形提供足够的能量来改变相变材料的结构状态。在一个实施例中，编程波形改变相变材料内的晶体和非晶相区域的体积分数。调节波形提供足够的能量以将相变材料加热到高于环境温度但低于相变材料的结晶温度的温度。该方法将相变材料编程为呈现减小的电阻时间变化的状态。

2. 发明授权

US07902536B2 Memory device and method of making same 有权
标题翻译：存储器件及其制作方法
公开(公告)号：US07902536B2
公开(公告)日：2011-03-08
申请号：US11495927
申请日：2006-07-28
申请人： Wolodymyr Czubatyj , Tyler Lowrey , Sergey Kostylev
发明人： Wolodymyr Czubatyj , Tyler Lowrey , Sergey Kostylev
IPC分类号： H01L29/02 , H01L47/00
CPC分类号： G11C11/5678 , G11C11/56 , G11C13/0004 , H01L45/06 , H01L45/122 , H01L45/143 , H01L45/144 , H01L45/148
摘要： A radial memory device includes a phase-change material, a first electrode in electrical communication with the phase-change material, the first electrode having a substantially planar first area of electrical communication with the phase-change material. The radial memory device also includes a second electrode in electrical communication with the phase-change material, the second electrode having a second area of electrical communication with the phase-change material, the second area being laterally spacedly disposed from the first area and substantially circumscribing the first area.Further, a method of making a memory device is disclosed. The steps include depositing a first electrode, depositing a first insulator, configuring the first insulator to define a first opening. The first opening provides for a generally planar first contact of the first electrode. The method further including the steps of depositing a phase-change material, depositing a second insulator, configuring the second insulator, depositing a second electrode having a second contact laterally displaced from said first contact, and configuring said second electrode.
摘要翻译：径向存储器件包括相变材料，与相变材料电连通的第一电极，第一电极具有与相变材料电连通的基本平坦的第一区域。所述径向存储装置还包括与所述相变材料电连通的第二电极，所述第二电极具有与所述相变材料电连通的第二区域，所述第二区域与所述第一区域横向间隔设置并且基本上限定第一个区域。此外，公开了一种制造存储器件的方法。这些步骤包括沉积第一电极，沉积第一绝缘体，构成第一绝缘体以限定第一开口。第一开口提供第一电极的大致平面的第一接触。该方法还包括以下步骤：沉积相变材料，沉积第二绝缘体，构成第二绝缘体，沉积具有从所述第一触点横向移位的第二触点的第二电极，以及配置所述第二电极。

3. 发明授权

US07692272B2 Electrically rewritable non-volatile memory element and method of manufacturing the same 有权
标题翻译：电可重写非易失性存储元件及其制造方法
公开(公告)号：US07692272B2
公开(公告)日：2010-04-06
申请号：US11334504
申请日：2006-01-19
申请人： Isamu Asano , Natsuki Sato , Wolodymyr Czubatyj , Jeffrey P. Fournier
发明人： Isamu Asano , Natsuki Sato , Wolodymyr Czubatyj , Jeffrey P. Fournier
IPC分类号： H01L31/0264
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1625
摘要： A non-volatile memory element comprises a bottom electrode 12; a top electrode 15; and a recording layer 13 containing phase change material and a block layer 14 that can block phase change of the recording layer 13, provided between the bottom electrode 12 and the top electrode 15. The block layer 14 is constituted of material having an electrical resistance that is higher than that of material constituting the recording layer 13. The block layer 14 suppresses the radiation of heat towards the top electrode 15 and greatly limits the phase change region when a write current is applied. The result is a high heating efficiency. The top electrode 15 itself can be used to constitute a bit line, or a separate bit line can be provided.
摘要翻译：非易失性存储元件包括底部电极12; 顶部电极15; 以及包含相变材料的记录层13和可以阻挡设置在底部电极12和顶部电极15之间的记录层13的相变的阻挡层14.阻挡层14由具有电阻的材料构成，比构成记录层13的材料高。阻挡层14抑制向顶部电极15的热辐射，并且在施加写入电流时极大地限制相变区域。结果是高的加热效率。顶部电极15本身可以用于构成位线，或者可以提供单独的位线。

4. 发明申请

US20090225588A1 Memory Device 有权
标题翻译：存储设备
公开(公告)号：US20090225588A1
公开(公告)日：2009-09-10
申请号：US12044407
申请日：2008-03-07
申请人： Wolodymyr Czubatyj , Regino Sandoval
发明人： Wolodymyr Czubatyj , Regino Sandoval
IPC分类号： G11C11/00 , H01L21/06
CPC分类号： H01L45/122 , H01L45/06 , H01L45/126 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/16
摘要： A phase-change memory device includes a first insulator having a hole therethrough, a first electrode that conforms at least partially to the hole, a phase-change material in electrical communication with the first electrode, and a second electrode in electrical communication with the phase-change material. When current is passed from the first electrode to the second electrode through the phase-change material, at least one of the first and second electrodes remains unreactive with the phase change material.
摘要翻译：相变存储器件包括具有穿过其中的孔的第一绝缘体，至少部分地匹配于该孔的第一电极，与第一电极电连通的相变材料以及与该相位电连通的第二电极交换材料当电流通过相变材料从第一电极通过第二电极时，第一和第二电极中的至少一个保持与相变材料不反应。

5. 发明申请

US20080273372A1 Method of Programming Multi-Layer Chalcogenide Devices 有权
标题翻译：多层硫族化物器件编程方法
公开(公告)号：US20080273372A1
公开(公告)日：2008-11-06
申请号：US12178148
申请日：2008-07-23
申请人： Regino Sandoval , Sergey A. Kostylev , Wolodymyr Czubatyj , Tyler Lowrey
发明人： Regino Sandoval , Sergey A. Kostylev , Wolodymyr Czubatyj , Tyler Lowrey
IPC分类号： G11C11/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625
摘要： A method of programming a multi-layer chalcogenide electronic device. The device includes an active region in electrical communication with two terminals, where the active region includes two or more layers. The method includes providing an electrical signal between the two terminals, where the electrical signal alters an electrical characteristic of a layer remote from one of the terminals. In one embodiment, the layer remote from the terminal is a chalcogenide material and the electrical characteristic is resistance. In another embodiment, an electrical characteristic of the layer in contact with the terminal is also altered. The alteration of an electrical characteristic may be caused by a transformation of a chalcogenide material from one structural state to another structural state.
摘要翻译：一种编程多层硫族化物电子器件的方法。该器件包括与两个端子电连通的有源区域，其中有源区域包括两层或更多层。该方法包括在两个终端之间提供电信号，其中电信号改变远离一个终端的层的电特性。在一个实施例中，远离终端的层是硫族化物材料，并且电特性是电阻。在另一个实施例中，与终端接触的层的电特性也被改变。电特性的改变可能是由硫族化物材料从一种结构状态转变为另一种结构状态引起的。

6. 发明申请

US20080224120A1 Phase change device with offset contact 有权
标题翻译：相移装置，带偏置接点
公开(公告)号：US20080224120A1
公开(公告)日：2008-09-18
申请号：US12152330
申请日：2008-05-14
申请人： Wolodymyr Czubatyj , Tyler Lowrey
发明人： Wolodymyr Czubatyj , Tyler Lowrey
IPC分类号： H01L45/00
CPC分类号： H01L45/126 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/141
摘要： A programmable resistance memory combines multiple cells into a block that includes one or more shared electrodes. The shared electrode configuration provides additional thermal isolation for the active region of each memory cell, thereby reducing the current required to program each memory cell.
摘要翻译：可编程电阻存储器将多个单元组合成包括一个或多个共享电极的块。共享电极配置为每个存储单元的有源区域提供额外的热隔离，从而减少编程每个存储单元所需的电流。

7. 发明申请

US20080042119A1 Multi-layered chalcogenide and related devices having enhanced operational characteristics 审中-公开
标题翻译：具有增强的操作特性的多层硫族化物和相关装置
公开(公告)号：US20080042119A1
公开(公告)日：2008-02-21
申请号：US11821246
申请日：2007-06-22
申请人： Regino Sandoval , Wolodymyr Czubatyj , Tyler Lowrey , Isamu Asano
发明人： Regino Sandoval , Wolodymyr Czubatyj , Tyler Lowrey , Isamu Asano
IPC分类号： H01L47/00
CPC分类号： H01L45/1246 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625
摘要： A multi-layer chalcogenide, memory or switching device. The device includes an active region disposed between a first terminal and a second terminal. The active region includes a first layer and a second layer, where one of the layers is a heterogeneous layer that includes an operational component and a promoter component. The other layer may be a homogeneous or heterogeneous layer. In exemplary embodiments, the operational component is a chalcogenide or phase change material and the promoter component is an insulating or dielectric material. Inclusion of the promoter component provides beneficial performance characteristics such as a reduction in reset current or minimization of formation requirements.
摘要翻译：多层硫族化物，记忆体或开关装置。该装置包括设置在第一端子和第二端子之间的有源区域。有源区包括第一层和第二层，其中一层是包含可操作组分和促进剂组分的异质层。另一层可以是均质或非均质层。在示例性实施方案中，操作组分是硫族化物或相变材料，并且促进剂组分是绝缘或介电材料。包含启动子组分提供了有益的性能特征，例如复位电流的降低或形成要求的最小化。

8. 发明申请

US20080023685A1 MEMORY DEVICE AND METHOD OF MAKING SAME 审中-公开
标题翻译：存储器件及其制造方法
公开(公告)号：US20080023685A1
公开(公告)日：2008-01-31
申请号：US11743459
申请日：2007-05-02
申请人： Wolodymyr Czubatyj , Tyler Lowrey , Sergey Kostylev , Regino Sandoval
发明人： Wolodymyr Czubatyj , Tyler Lowrey , Sergey Kostylev , Regino Sandoval
IPC分类号： H01L47/00
CPC分类号： H01L45/148 , H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/1246 , H01L45/143 , H01L45/144
摘要： A memory device includes a phase-change material and a first electrode in electrical communication with the phase-change material. Also included is a second electrode in electrical communication with the phase-change material and a dielectric layer. The dielectric layer is disposed between the first electrode and the second electrode. The dielectric layer has an opening therethrough. The phase-change material is disposed on both sides of the dielectric layer and within the opening. Electrical communication within the device is by means of virtual contacts.
摘要翻译：存储器件包括相变材料和与相变材料电连通的第一电极。还包括与相变材料和介电层电连通的第二电极。介电层设置在第一电极和第二电极之间。电介质层具有通过其的开口。相变材料设置在电介质层的两侧和开口内。设备内的电气通信是通过虚拟接触。

9. 发明授权

US07280390B2 Reading phase change memories without triggering reset cell threshold devices 有权
标题翻译：读取相位改变存储器，而不触发复位单元阈值器件
公开(公告)号：US07280390B2
公开(公告)日：2007-10-09
申请号：US11105829
申请日：2005-04-14
申请人： Sergey A. Kostylev , Tyler Arthur Lowrey , Wolodymyr Czubatyj , Ward D. Parkinson
发明人： Sergey A. Kostylev , Tyler Arthur Lowrey , Wolodymyr Czubatyj , Ward D. Parkinson
IPC分类号： G11C11/00
CPC分类号： G11C13/004 , G11C11/5678 , G11C13/0004 , G11C13/0033 , G11C2013/0054
摘要： A phase change memory may be read so as to reduce the likelihood of a read disturb. A read disturb may occur, for example, when a reset device is raised to a voltage, which causes its threshold device to trigger. The triggering of the threshold device produces a displacement current which may convert a reset device to a set device. By ensuring that the reset cell never reaches a voltage that would result in triggering of the threshold device, read disturbs may be reduced.
摘要翻译：可以读取相变存储器，以便减少读取干扰的可能性。例如，当复位装置升高到电压时，可能会发生读取干扰，导致其阈值装置触发。阈值装置的触发产生位移电流，其可以将复位装置转换成集装置。通过确保复位单元不会达到会导致阈值器件触发的电压，可能会降低读取干扰。

10. 发明申请

US20070096074A1 Electrically rewritable non-volatile memory element and method of manufacturing the same 有权
标题翻译：电可重写非易失性存储元件及其制造方法
公开(公告)号：US20070096074A1
公开(公告)日：2007-05-03
申请号：US11264129
申请日：2005-11-02
申请人： Isamu Asano , Natsuki Sato , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj , Stephen Hudgens
发明人： Isamu Asano , Natsuki Sato , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj , Stephen Hudgens
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/148
摘要： A non-volatile memory element includes a first interlayer insulation layer 11 having a first through-hole 11a, a second interlayer insulation layer 12 having a second through-hole 12a formed on the first interlayer insulation layer 11, a bottom electrode 13 provided in the first through-hole 11, recording layer 15 containing phase change material provided in the second through-hole 12, a top electrode 16 provided on the second interlayer insulation layer 12, and a thin-film insulation layer 14 formed between the bottom electrode 13 and the recording layer 15. In accordance with this invention, the diameter D1 of a bottom electrode 13 buried in a first through-hole 11a is smaller than the diameter D2 of a second through-hole 12a, thereby decreasing the thermal capacity of the bottom electrode 13. Therefore, when a pore 14a is formed by dielectric breakdown in a thin-film insulation layer 14 and the vicinity is used as a heating region, the amount of heat escaping to the bottom electrode 13 is decreased, resulting in higher heating efficiency.
摘要翻译：非易失性存储元件包括具有第一通孔11a的第一层间绝缘层11，具有形成在第一层间绝缘层11上的第二通孔12a的第二层间绝缘层12，在第一通孔11中，设置在第二通孔12中的包含相变材料的记录层15，设置在第二层间绝缘层12上的顶部电极16和形成在第二通孔12的底部电极之间的薄膜绝缘层14 13和记录层15。根据本发明，埋在第一通孔11a中的底部电极13的直径D 1小于第二通孔12a的直径D 2，从而降低底部电极13的热容量。因此，当通过薄膜绝缘层14中的电介质击穿形成孔14a并且将其附近用作加热区域时，逸出到底部电极13的热量减少，导致更高的加热效率。

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