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    • 5. 发明授权
    • Method for producing a luminescence diode chip
    • 发光二极管芯片的制造方法
    • US07510890B2
    • 2009-03-31
    • US10979359
    • 2004-11-01
    • Hubert OttStefan GrötschHerbert Brunner
    • Hubert OttStefan GrötschHerbert Brunner
    • H01L21/00
    • H01L33/58H01L33/507H01L2224/48091H01L2924/00014
    • A method for producing a luminescence diode chip, in which provision is made of a semiconductor body is provided having an epitaxially grown semiconductor layer sequence having an active zone and a radiation coupling-out area, the active zone emitting an electromagnetic radiation during operation of the luminescence diode, a large part of said electromagnetic radiation being coupled out via the radiation coupling-out area. A luminescence conversion material is arranged downstream of the radiation coupling-out area in an emission direction of the semiconductor body. A radiation-transmissive covering body having a first main area, a second main area opposite to the first main area, and also side areas connecting the first and second main areas. The covering body is applied to the radiation coupling-out area of the semiconductor layer sequence in such a way that the first main area faces the radiation coupling-out area. The application of the covering body is preceded by the application of a first conversion layer, having a luminescence conversion material, to the first main area of the covering body.
    • 提供一种制造发光二极管芯片的方法,其中提供具有半导体本体的外延生长的半导体层序列,其具有活性区和辐射耦合区域,所述有源区域在操作期间发射电磁辐射 发光二极管,所述电磁辐射的大部分经由辐射耦合输出区被耦合输出。 发光转换材料被布置在半导体本体的发射方向上的辐射耦合输出区域的下游。 具有第一主区域,与第一主区域相对的第二主区域以及连接第一主区域和第二主区域的侧面区域的辐射透射覆盖体。 将覆盖体施加到半导体层序列的辐射耦合出区域,使得第一主区域面向辐射耦合输出区域。 覆盖体的应用之前是将具有发光转换材料的第一转换层应用于覆盖体的第一主区域。