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1. 发明授权

US09123528B2 Composite substrate, semiconductor chip having a composite substrate and method for producing composite substrates and semiconductor chips 有权
标题翻译：复合基板，具有复合基板的半导体芯片以及复合基板和半导体芯片的制造方法
公开(公告)号：US09123528B2
公开(公告)日：2015-09-01
申请号：US13883730
申请日：2011-12-16
申请人： Johannes Baur , Berthold Hahn , Karl Engl , Ann-Kathrin Haerle , Jakob Johannes Haerle , Johanna Magdalena Haerle , Joachim Hertkorn , Tetsuya Taki
发明人： Johannes Baur , Berthold Hahn , Karl Engl , Volker Haerle , Joachim Hertkorn , Tetsuya Taki
IPC分类号： H01L29/02 , H01L21/78 , H01L21/02 , H01L33/00 , H01L33/08
CPC分类号： H01L33/32 , H01L21/02612 , H01L21/78 , H01L24/73 , H01L29/02 , H01L33/0079 , H01L33/08 , H01L33/46 , H01L33/507 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49107 , H01L2224/73265 , H01L2924/00012 , H01L2924/00014
摘要： A composite substrate has a carrier and a utility layer. The utility layer is attached to the carrier by means of a dielectric bonding layer and the carrier contains a radiation conversion material. Other embodiments relate to a semiconductor chip having such a composite substrate, a method for producing a composite substrate and a method for producing a semiconductor chip with a composite substrate.
摘要翻译：复合衬底具有载体和效用层。实用层通过介电粘合层附着到载体上，载体包含辐射转换材料。其他实施方式涉及具有这种复合基板的半导体芯片，复合基板的制造方法以及具有复合基板的半导体芯片的制造方法。

2. 发明申请

US20140346541A1 METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC SEMICONDUCTOR CHIP 有权
标题翻译：生产光电半导体芯片和光电子半导体芯片的方法
公开(公告)号：US20140346541A1
公开(公告)日：2014-11-27
申请号：US14345852
申请日：2012-08-23
申请人： Joachim Hertkorn , Karl Engl , Berthold Hahn , Andreas Weimar
发明人： Joachim Hertkorn , Karl Engl , Berthold Hahn , Andreas Weimar
IPC分类号： H01L33/00 , H01L33/02 , H01L33/22 , H01L33/12 , H01L33/32 , H01L33/24
CPC分类号： H01L33/145 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/02631 , H01L21/02664 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/025 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： A method of producing an optoelectronic semiconductor chip includes providing a growth substrate, producing a III nitride nucleation layer on the growth substrate by sputtering, wherein a material of the growth substrate differs from a material of the nucleation layer, and growing a III nitride semiconductor layer sequence having an active layer onto the nucleation layer.
摘要翻译：制造光电子半导体芯片的方法包括提供生长衬底，通过溅射在生长衬底上产生III族氮化物成核层，其中生长衬底的材料与成核层的材料不同，以及生长III族氮化物半导体层序列在成核层上具有活性层。

3. 发明授权

US08872330B2 Thin-film semiconductor component and component assembly 有权
标题翻译：薄膜半导体元件和元件组装
公开(公告)号：US08872330B2
公开(公告)日：2014-10-28
申请号：US12376425
申请日：2007-07-16
申请人： Siegfried Herrmann , Berthold Hahn
发明人： Siegfried Herrmann , Berthold Hahn
IPC分类号： H01L23/367 , H01L33/64 , H01L33/00 , H01L33/62 , H01L27/15 , H01L33/38
CPC分类号： H01L33/0079 , H01L27/15 , H01L33/385 , H01L33/54 , H01L33/62 , H01L33/642 , H01L33/647 , H01L2224/48091 , H01L2924/00014
摘要： A thin-film semiconductor component having a carrier layer and a layer stack which is arranged on the carrier layer, the layer stack containing a semiconductor material and being provided for emitting radiation, wherein a heat dissipating layer provided for cooling the semiconductor component is applied on the carrier layer. A component assembly is also disclosed.
摘要翻译：一种具有载体层和层叠体的薄膜半导体部件，其布置在载体层上，所述层叠体包含半导体材料并被设置用于发射辐射，其中设置用于冷却半导体部件的散热层被施加到载体层。还公开了一种组件组件。

4. 发明授权

US08581279B2 Light-emitting diode chip comprising a contact structure 有权
公开(公告)号：US08581279B2
公开(公告)日：2013-11-12
申请号：US11921530
申请日：2006-06-02
申请人： Johannes Baur , Volker Härle , Berthold Hahn , Andreas Weimar , Raimund Oberschmid , Ewald Karl Michael Guenther , Franz Eberhard , Markus Richter , Jörg Strauss
发明人： Johannes Baur , Volker Härle , Berthold Hahn , Andreas Weimar , Raimund Oberschmid , Ewald Karl Michael Guenther , Franz Eberhard , Markus Richter , Jörg Strauss
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L2924/0002 , H01L2924/00
摘要： In a luminescence diode chip having a radiation exit area (1) and a contact structure (2, 3, 4) which is arranged on the radiation exit area (1) and comprises a bonding pad (4) and a plurality of contact webs (2, 3) which are provided for current expansion and are electrically conductively connected to the bonding pad (4), the bonding pad (4) is arranged in an edge region of the radiation exit area (1). The luminescence diode chip has reduced absorption of the emitted radiation (23) in the contact structure (2, 3, 4).

5. 发明授权

US08581264B2 Semiconductor body and method of producing a semiconductor body 有权
标题翻译：半导体体及其制造方法
公开(公告)号：US08581264B2
公开(公告)日：2013-11-12
申请号：US12922864
申请日：2009-05-28
申请人： Martin Strassburg , Hans-Juergen Lugauer , Vincent Grolier , Berthold Hahn , Richard Floeter
发明人： Martin Strassburg , Hans-Juergen Lugauer , Vincent Grolier , Berthold Hahn , Richard Floeter
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L33/025 , H01L33/0095 , H01L33/06 , H01L33/325 , H01S5/305
摘要： A semiconductor body includes an n-conductive semiconductor layer and a p-conductive semiconductor layer. The p-conductive semiconductor layer contains a p-dopant and the n-conductive semiconductor layer an n-dopant and a further dopant.
摘要翻译：半导体本体包括n导电半导体层和p导电半导体层。 p导电半导体层包含p-掺杂剂，并且n导电半导体层包含n掺杂剂和另外的掺杂剂。

6. 发明授权

US08273593B2 Method for production of a radiation-emitting semiconductor chip 有权
标题翻译：辐射发射半导体芯片的制造方法
公开(公告)号：US08273593B2
公开(公告)日：2012-09-25
申请号：US13027810
申请日：2011-02-15
申请人： Berthold Hahn , Stephan Kaiser , Volker Härle
发明人： Berthold Hahn , Stephan Kaiser , Volker Härle
IPC分类号： H01L21/66 , H01L21/30
CPC分类号： H01L33/22 , H01L33/0079
摘要： A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, wherein the semiconductor layer sequence is grown on a substrate, a mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer, the semiconductor layer sequence is separated from the substrate, and a separation surface of the semiconductor layer sequence, from which the substrate is separated, is etched by an etchant which predominantly etches at crystal defects and selectively etches different crystal facets at the separation surface.
摘要翻译：一种用于对薄膜发光二极管芯片的半导体层序列的辐射发射表面进行微图形化的方法，其中在衬底上生长半导体层序列，在半导体层序列上形成或施加镜面层，在半导体层序列中在半导体层序列中产生的至少一部分辐射反射回半导体层序列并且朝向镜面层，半导体层序列与衬底分离，并且半导体层的分离表面衬底分离的层序列被蚀刻剂蚀刻，蚀刻剂主要在晶体缺陷处蚀刻并选择性地蚀刻分离表面处的不同晶面。

7. 发明授权

US08017953B2 Luminescence diode chip with current spreading layer and method for producing the same 有权
标题翻译：具有电流扩散层的LED芯片及其制造方法
公开(公告)号：US08017953B2
公开(公告)日：2011-09-13
申请号：US12158474
申请日：2006-11-21
申请人： Berthold Hahn , Ralph Wirth , Tony Albrecht , Magnus Ahlstedt , Stefan Illek , Klaus Streubel
发明人： Berthold Hahn , Ralph Wirth , Tony Albrecht , Magnus Ahlstedt , Stefan Illek , Klaus Streubel
IPC分类号： H01L27/15
CPC分类号： H01L33/145 , H01L33/42
摘要： An LED chip is specified that comprises at least one current barrier. The current barrier is suitable for selectively preventing or reducing, by means of a reduced current density, the generation of radiation in a region laterally covered by the electrical connector body. The current spreading layer contains at least one TCO (Transparent Conductive Oxide). In a particularly preferred embodiment, at least one current barrier is contained which comprises material of the epitaxial semiconductor layer sequence, material of the current spreading layer and/or an interface between the semiconductor layer sequence and the current spreading layer. A method for producing an LED chip is also specified.
摘要翻译：指定包括至少一个电流屏障的LED芯片。电流屏障适合于通过减小的电流密度选择性地防止或减少由电连接器主体横向覆盖的区域中的辐射的产生。电流扩散层含有至少一种TCO（透明导电氧化物）。在特别优选的实施例中，包含至少一个电流屏障，其包括外延半导体层序列的材料，电流扩展层的材料和/或半导体层序列和电流扩展层之间的界面。还指定了用于制造LED芯片的方法。

8. 发明授权

US07939844B2 Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same 有权
标题翻译：包含发射辐射的基于GAN的外延层序列的发光二极管芯片及其制造方法
公开(公告)号：US07939844B2
公开(公告)日：2011-05-10
申请号：US11755284
申请日：2007-05-30
申请人： Berthold Hahn , Ulrich Jacob , Hans-Jürgen Lugauer , Manfred Mundbrod-Vangerow
发明人： Berthold Hahn , Ulrich Jacob , Hans-Jürgen Lugauer , Manfred Mundbrod-Vangerow
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L24/73 , H01L33/32 , H01L33/405 , H01L33/42 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01067 , H01L2924/12041 , H01L2924/00014 , H01L2924/00012
摘要： A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a p-doped layer (5). The p-doped layer (5) is provided, on its main surface (9) facing away from the active region (19), with a reflective contact metallization (6) comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
摘要翻译：发光二极管芯片（1）包括GaN基辐射发射外延层序列（3），有源区（19），n掺杂层（4）和p掺杂层（5）。 p型掺杂层（5）在其主表面（9）上面向远离有源区（19）的反射接触金属化（6）提供，反射接触金属化（6）包括一个放射性接触层（15）和一个反射层（16））。提供了通过薄膜技术制造这种类型的LED芯片的方法，以及包含这种LED芯片的LED组件。

9. 发明申请

US20100133564A1 Method for Producing Semiconductor Components and Thin-Film Semiconductor Component 有权
标题翻译：生产半导体元件和薄膜半导体元件的方法
公开(公告)号：US20100133564A1
公开(公告)日：2010-06-03
申请号：US11990099
申请日：2006-08-04
申请人： Siegfried Herrmann , Berthold Hahn
发明人： Siegfried Herrmann , Berthold Hahn
IPC分类号： H01L33/00 , H01L21/20 , H01L29/02 , H01L21/30
CPC分类号： H01L21/6835 , H01L24/29 , H01L24/32 , H01L24/73 , H01L33/0079 , H01L2221/68363 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01023 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01068 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/12036 , H01L2924/181 , Y02P20/582 , H01L2924/00014 , H01L2924/00 , H01L2924/3512 , H01L2924/00012
摘要： The invention relates to a method for producing semiconductor components, wherein a layer composite (6) containing a semiconductor material is formed on a growth substrate (1), a flexible carrier layer is applied to the layer composite (6), the flexible carrier layer is cured to form a self-supporting carrier layer (2), and the growth substrate (1) is stripped away. As an alternative, the carrier layer (2) may have a base layer (2b) and an adhesion layer (2a) adhering on the layer composite.
摘要翻译：本发明涉及一种生产半导体元件的方法，其中在生长衬底（1）上形成含有半导体材料的复合层（6），将柔性载体层施加到复合层（6）上，柔性载体层固化以形成自支撑载体层（2），剥离生长衬底（1）。作为替代，载体层（2）可以具有粘附在层复合物上的基底层（2b）和粘附层（2a）。

10. 发明授权

US07482181B2 Method for fabricating a light-emitting device based on a gallium nitride-based compound semiconductor, and light-emitting device based on a gallium nitride-based compound semiconductor 有权
标题翻译：基于氮化镓系化合物半导体的发光元件的制造方法以及基于氮化镓系化合物半导体的发光元件
公开(公告)号：US07482181B2
公开(公告)日：2009-01-27
申请号：US10762097
申请日：2004-01-20
申请人： Berthold Hahn , Andreas Hangleiter , Volker Härle
发明人： Berthold Hahn , Andreas Hangleiter , Volker Härle
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L33/02 , H01L33/32
摘要： A light-emitting device is based on a gallium nitride-based compound semiconductor. A light-emitting layer with a first and a second main surface is formed from a compound semiconductor based on gallium nitride. A first coating layer, which is joined to the first main surface of the light-emitting layer, is formed from an n-type compound semiconductor based on gallium nitride. The composition of which differs from that of the compound semiconductor of the light-emitting layer. A second coating layer, which is joined to the second main surface of the light-emitting layer, is formed from a p-type compound semiconductor based on gallium nitride, the composition of which differs from that of the compound semiconductor of the light-emitting layer. To improve the light yield of the device, the thickness of the light-emitting layer in the vicinity of dislocations is configured to be lower than in the remaining regions.
摘要翻译：发光器件基于氮化镓基化合物半导体。具有第一和第二主表面的发光层由基于氮化镓的化合物半导体形成。与发光层的第一主表面接合的第一涂层由基于氮化镓的n型化合物半导体形成。其组成与发光层的化合物半导体的组成不同。与发光层的第二主表面接合的第二涂层由基于氮化镓的p型化合物半导体形成，其组成与发光的化合物半导体的组成不同层。为了提高器件的光产量，位错附近的发光层的厚度被配置为低于其余区域中的厚度。

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